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NPN Bipolar Transistor
Low noise tuned amplifiers
Description Symbol Value Unit
Collector-Base Voltage VCBO 20 V
Collector-Emitter Voltage VCEO 12 V
Emitter Base Voltage VEBO 2.5 V
Collector Current IC50 mA
Power Dissipation at Ta = 25°C
at Tc= 25°C
Ptot
-
200
300 mW
Operating and Storage Junction Tj, Tstg -65 to +200 °C
Temperature Range - - -
Thermal Resistance - - -
Junction to Case Rth (j-c) 583 °C / W
Junction to Ambient Rth (j-a) 875 °C / W
Absolute Maximum Ratings
Electrical Characteristics (Ta = 25°C Unless Otherwise Specified)
Description Symbol Test Condition Min. Typ. Max. Unit
Collector Cut off Current ICBO
VCB = 15 V, IE= 0 Ta = 150°C - - 20 nA
VCB = 15 V, IE = 0 - - 1 uA
Collector-Base Voltage VCBO IC = 1 uA, IE = 0 20 - - V
Collector-Emitter Voltage VCEO (sus) IC = 3 mA, IB = 0 12 - - V
Emitter Base Voltage VEBO IE = 10 uA, IC = 0 2.5 - - V
Collector Emitter Saturation Voltage VCE (Sat) IC = 10 mA, IB = 1 mA - - 0.4 V
Base Emitter Saturation Voltage VBE (Sat) IC = 10 mA, IB = 1 mA - - 1 V
DC Current Gain hFE IC = 3 mA,VCE = 1 V 25 - 250 -
Dynamic Characteristics
Forward Current Transfer Ratio
hfe IC = 2 mA, VCE = 6 V, f = 1 kHz 25 - 300 -
ft IC = 5 mA, VCE = 6 V, f = 100 MHz 900 - 2,000 MHz
2N5179-NRC
TO-72
NPN Bipolar Transistor
Page <2> 08/08/11 V1.1
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Important Notice : This data sheet and its contents (the "Information") belong to the members of the Premier Farnell group of companies (the "Group") or are licensed to it. No licence is granted for the use of
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all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use
made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted.
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Dimensions : Millimetres
Description Symbol Test Condition Min. Typ.Max. Unit
Out-Put Capacitance Cob VCB = 10 V, IE = 0, f = 1 MHz - - 1 pF
In-Put Capacitance Cib VEB = 0.5 V, IC = 0, f = 1 MHz - - 2 pF
Collector Base Time Constant rbb' Cb' c IC = 2 mA, VCE = V, f = 31.9 MHz 3 - 14 ps
Small-Signal Power Gain Gp IC = 5 mA, VCE = 12 V, f = 200 MHz 15 - - dB
Common Emitter Oscillator Power
Output Po IE = -12 mA, VCB = 10 V, f = >500 MHz 20 - - mW
Electrical Characteristics (Ta = 25°C Unless Otherwise Specified)
TO-72 Metal Can Package
Diameter Min. Max.
A 5.24 5.84
B 4.52 4.95
C 4.31 5.33
D 0.4 0.53
E - 0.76
F 1.14 1.39
G 2.28 2.97
H 0.91 1.17
J 0.71 1.22
K 12.7 -
L 12° 48°
Pin Configuration
1. Emitter
2. Base
3. Collector
4. Case
Part Number Table
Description Part Number
NPN Bipolar Transistor 2N5179-NRC