40MT1.0P.PbF, 70MT1.0P.PbF, 100MT1.0P.PbF Series Vishay High Power Products Three Phase Bridge (Power Module), 45 A to 100 A FEATURES * Low VF * Low profile package * Direct mounting to heatsink * Flat pin/round pin versions with PCB solderable terminals * Low junction to case thermal resistance * 3500 VRMS insulation voltage * UL approved file E78996 MT...PA * Compliant to RoHS directive 2002/95/EC MT...PB * Designed and qualified for industrial level APPLICATIONS * Power conversion machines * Welding * UPS * SMPS PRODUCT SUMMARY IO * Motor drives 45 A to 100 A * General purpose and heavy duty application DESCRIPTION A range of extremely compact three-phase rectifier bridges offering efficient and reliable operation. The low profile package has been specifically conceived to maximize space saving and optimize the electrical layout of the application specific power supplies. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IO IFSM I2t CHARACTERISTICS 40MT 70MT 100MT UNITS 45 75 100 A TC 100 80 80 C 50 Hz 270 380 450 60 Hz 280 398 470 50 Hz 365 724 1013 60 Hz 325 660 920 3650 7240 10 130 A I2t VRRM 1400 to 1600 TStg - 40 to 125 Range TJ Document Number: 94538 Revision: 10-Mar-10 A2s A2s V C - 40 to 150 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 40MT1.0P.PbF, 70MT1.0P.PbF, 100MT1.0P.PbF Series Vishay High Power Products Three Phase Bridge (Power Module), 45 A to 100 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS VOLTAGE CODE REVERSE VOLTAGE V VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK V 40MT140P, 70MT140P, 100MT140P 140 1400 1500 40MT160P, 70MT160P, 100MT160P 160 1600 1700 TYPE NUMBER IRRM MAXIMUM AT TJ = 150 C mA 5 FORWARD CONDUCTION PARAMETER Maximum DC output current at case temperature SYMBOL IO TEST CONDITIONS 120 rect. to conduction angle t = 10 ms Maximum peak, one cycle forward, non-repetitive on state surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms Value of threshold voltage Slope resistance Maximum forward voltage drop I2t VF(TO) rt VFM 100 % VRRM reapplied No voltage reapplied Initial TJ = TJ maximum 70MT 100MT UNITS 45 75 100 A C 100 80 80 270 380 450 280 398 470 225 320 380 240 335 400 1013 365 724 325 660 920 253 512 600 A2s 100 % VRRM reapplied 240 467 665 t = 0.1 ms to 10 ms, no voltage reapplied 3650 7240 10 130 0.78 0.82 0.75 V 14.8 9.5 8.1 m 1.45 1.45 1.51 V 40MT 70MT 100MT UNITS t = 8.3 ms Maximum I2t for fusing No voltage reapplied 40MT TJ maximum TJ = 25 C; tp = 400 s single junction (40MT, Ipk = 40 A) (70MT, Ipk = 70 A) (100MT, Ipk = 100 A) A2s INSULATION TABLE PARAMETER RMS insulation voltage SYMBOL VINS TEST CONDITIONS TJ = 25 C, all terminal shorted, f = 50 Hz, t = 1 s 3500 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink per module Mounting torque to heatsink 10 % Approximate weight www.vishay.com 2 SYMBOL TEST CONDITIONS 40MT 70MT 100MT TJ - 40 to 150 TStg - 40 to 125 UNITS C RthJC RthCS DC operation per module 0.27 0.23 0.19 DC operation per junction 1.6 1.38 1.14 120 rect. condunction angle per module 0.38 0.29 0.22 120 rect. condunction angle per junction 2.25 1.76 1.29 Mounting surface smooth, flat and greased Heatsink compound thermal conductivity = 0.42 W/mK A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads For technical questions, contact: indmodules@vishay.com K/W 0.1 4 Nm 65 g Document Number: 94538 Revision: 10-Mar-10 40MT1.0P.PbF, 70MT1.0P.PbF, 100MT1.0P.PbF Series Three Phase Bridge Vishay High Power Products (Power Module), 45 A to 100 A CLEARANCE AND CREEPAGE DISTANCES PARAMETER TEST CONDITIONS Shortest distance along external surface of the insulating material between terminals which are not internally short circuited together 160 Peak Half Sine Wave On-state Current (A) Creepage distance Maximum Allowable Case Temperature (C) Clearance External shortest distances in air between terminals which are not internally short circuited together 40MT...P R thJC (DC) = 0.27 K/W Per Module 150 140 130 120 120 (Rect) 110 100 90 80 0 10 20 30 40 Tj = 25C Tj = 150C 10 40MT...P 1 2 3 4 5 10.9 12.3 mm 150 100 40MT...P Per Junction 50 1 10 100 Fig. 3 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Instantaneous On-state Current (A) 1000 1 UNITS Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 1 - Current Rating Characteristics 0 MT...PB At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 150C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 200 50 Total Output Current (A) 100 250 MT...PA 6 300 250 200 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T j = 150C No Voltage Reapplied Rated V rrm Reapplied 150 100 40MT...P Per Junction 50 0.01 0.1 1 Instantaneous On-state Voltage (V) Pulse Train Duration(s) Fig. 2 - On-State Voltage Drop Chracteristics Fig. 4 - Maximum Non-Repetitive Surge Current Document Number: 94538 Revision: 10-Mar-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 40MT1.0P.PbF, 70MT1.0P.PbF, 100MT1.0P.PbF Series Vishay High Power Products Three Phase Bridge (Power Module), 45 A to 100 A 250 200 1 0. = A hS Rt W K/ 2 0. Tj = 150C 0. 3 K 0.5 /W K/ W 0.4 K/ W a elt -D R 120 (Rect) 150 W K/ Maximum Total Power Loss (W) 40MT...P 1K /W 100 50 0 0 10 20 30 40 Total Output Current (A) 50 0 30 60 90 120 150 60 Maximum Allowable Ambient Temperature (C) 160 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (C) Fig. 5 - Current Rating Nomogram (1 Module Per Heatsink) 70MT...P R thJC (DC) = 0.23 K/W Per Module 150 140 130 120 110 120 (Rect) 100 90 80 70 60 0 200 150 Tj = 25C Tj = 150C 100 10 70MT...P 1 2 3 4 70MT...P Per Junction 100 1 10 100 Fig. 8 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Instantaneous On-state Current (A) 1000 5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics www.vishay.com 4 250 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 6 - Current Rating Characteristics 1 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 150C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 300 10 20 30 40 50 60 70 80 Total Output Current (A) 0 350 400 350 300 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T j = 150C No Voltage Reapplied Rated V rrm Reapplied 250 200 150 100 70MT...P Per Junction 50 0.01 0.1 1 Pulse Train Duration(s) Fig. 9 - Maximum Non-Repetitive Surge Current For technical questions, contact: indmodules@vishay.com Document Number: 94538 Revision: 10-Mar-10 40MT1.0P.PbF, 70MT1.0P.PbF, 100MT1.0P.PbF Series Three Phase Bridge Vishay High Power Products (Power Module), 45 A to 100 A 300 a elt -D R 120 (Rect) 150 W K/ 200 1 0. 0. 2 K/ W 0.3 K/ W 0.4 K/W 0.5 K/W Tj = 150C = Maximum Total Power Loss (W) A hS Rt 70MT...P 250 1K /W 100 50 0 0 20 40 Total Output Current (A) 60 0 80 30 60 90 120 150 Maximum Allowable Ambient Temperature (C) 140 100MT...P R thJC (DC) = 0.19 K/W 120 Per Module 100 80 120 (Rect) 60 40 40 50 60 70 80 90 100 110 120 130 Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (C) Fig. 10 - Current Rating Nomogram (1 Module Per Heatsink) 100MT...P 100 10 Tj = 150C Tj = 25C 2 2.5 3 300 250 200 100MT...P Per Junction 150 100 10 100 Fig. 13 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Instantaneous On-state Current (A) 1000 1.5 350 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 11 - Current Rating Characteristics 1 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1 Total Output Current (A) 1 0.5 400 3.5 4 500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 400 Initial T j = 125C No Voltage Reapplied 350 Rated V rrm Reapplied 450 300 250 200 150 100 50 100MT...P Per Junction 0 0.01 0.1 1 10 Instantaneous On-state Voltage (V) Pulse Train Duration(s) Fig. 12 - On-State Voltage Drop Characteristics Fig. 14 - Maximum Non-Repetitive Surge Current Document Number: 94538 Revision: 10-Mar-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 40MT1.0P.PbF, 70MT1.0P.PbF, 100MT1.0P.PbF Series Vishay High Power Products Three Phase Bridge (Power Module), 45 A to 100 A Maximum Total Power Loss (W) 500 Rt hS 0.0 A = 5K 0 .0 0.1 /W 25 K/ K/ W W 100MT...P Tj = 150C 400 300 120 (Rect) 200 0.2 K/W 0.3 K/W -D elt a R 0.5 K/W 1 K/W 100 0 0 20 40 60 80 Total Output Current (A) 0 30 60 90 120 150 100 Maximum Allowable Ambient Temperature (C) Transient Thermal Impedance Z thJC (K/W) Fig. 15 - Current Rating Nomogram (1 Module Per Heatsink) 10 Steady State Value RthJC per junction = 1.6 K/W (40MT...P) 1 1.38 K/W (70MT...P 1.14 K/W (100MT...P) 40MT...P 70MT...P 100MT...P DC Operation) 0.1 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 16 - Thermal Impedance ZthJC Characteristics www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 94538 Revision: 10-Mar-10 40MT1.0P.PbF, 70MT1.0P.PbF, 100MT1.0P.PbF Series Three Phase Bridge Vishay High Power Products (Power Module), 45 A to 100 A ORDERING INFORMATION TABLE Device code 10 0 MT 160 1 2 3 4 P B PbF 5 6 4 = 45 A 7 = 75 A 10 = 100 A 1 - Current rating code 2 - Circuit configuration code: 0 = 3-Phase rectifier bridge 3 - Essential part number 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) 5 - Pinout code 6 - Lead (Pb)-free A = Flat pins B = Round pins CIRCUIT CONFIGURATION LINKS TO RELATED DOCUMENTS Dimensions Document Number: 94538 Revision: 10-Mar-10 www.vishay.com/doc?95244 For technical questions, contact: indmodules@vishay.com www.vishay.com 7 Outline Dimensions Vishay Semiconductors MTP Flat and Round Pin DIMENSIONS FOR MTP WITH FLAT PIN in millimeters 14 7 Electrical circuit 2 42 0.1 3, 4 4 5 6 7 12 2.5 1, 2 44.5 7 7 7 7.4 7 22 O 5.2 (x 2) 22 1 6 5 7 14 14 39.5 1.3 27.5 2 3 32.5 0.5 0.5 4 0.5 5.5 5.5 O5 16 10.5 12 0.5 48.7 63.5 0.25 Document Number: 95244 Revision: 07-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions MTP Flat and Round Pin Vishay Semiconductors DIMENSIONS FOR MTP WITH ROUND PIN in millimeters 14 O5 7 4 Electrical circuit 7 20.5 0.1 3, 4 12 2.5 5 6 7 1, 2 44.5 7 7 7 O 1.1 7 5 6 14 4 10.5 1 32.5 0.1 2 27.5 3 22 4 12 0.5 O5 O 5.2 (x 2) 16 7 14 7.4 31.8 1.3 39.5 48.7 63.5 0.25 www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 95244 Revision: 07-Nov-07 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000