MMSZ4681-V to MMSZ4717-V
Document Number 85773
Rev. 1.7, 17-Jul-08
Vishay Semiconductors
www.vishay.com
1
17431
For technical support, please contact: DiodesSSP@vishay.com
Small Signal Zener Diodes
Features
• Silicon planar Zener diodes
•
Standard Zener voltage tolerance is ± 5 %
• High temperature soldering guaranteed:
260 °C/4 x 10 s set terminals
• These diodes are also available in DO-35
case with the type designation 1N4681 to
1N4717 and SOT-23 case with the type designa-
tion
MMBZ4681-V to MMBZ4717-V
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOD-123
Weight: approx. 9.3 mg
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/3 k per 7" reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Note
1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Note
1) On FR - 4 or FR - 5 board with minimum recommended solder pad layout
Parameter Test conditions Symbol Value Unit
Zener current (see Table “Characteristics”)
Power dissipation TL = 75 °C Ptot 500 1) mW
Parameter Test conditions Symbol Value Unit
Thermal resistance junction to ambient air RthJA 3401) K/W
Maximum junction temperature Tj150 °C
Storage temperature range Tstg - 55 to + 150 °C
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Document Number 85773
Rev. 1.7, 17-Jul-08
MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
For technical support, please contact: DiodesSSP@vishay.com
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Maximum VF = 0.9 V at IF = 10 mA
Note
1) Measured with device junction in thermal equilibrium
Part number Marking code
Zener voltage 1)Max. reverse
current Test voltage
VZ at IZT = 50 µA IRat VR
VµA V
typ. min. max. max.
MMSZ4681-V CF 2.4 2.28 2.52 2 1
MMSZ4682-V CH 2.7 2.57 2.84 1 1
MMSZ4683-V CJ 3 2.85 3.15 0.8 1
MMSZ4684-V CK 3.3 3.14 3.47 7.5 1.5
MMSZ4685-V CM 3.6 3.42 3.78 7.5 2
MMSZ4686-V CN 3.9 3.71 4.1 5 2
MMSZ4687-V CP 4.3 4.09 4.52 4 2
MMSZ4688-V CT 4.7 4.47 4.94 10 3
MMSZ4689-V CU 5.1 4.85 5.36 10 3
MMSZ4690-V CV 5.6 5.32 5.88 10 4
MMSZ4691-V CA 6.2 5.89 6.51 10 5
MMSZ4692-V CX 6.8 6.46 7.14 10 5.1
MMSZ4693-V CY 7.5 7.13 7.88 10 5.7
MMSZ4694-V CZ 8.2 7.79 8.61 1 6.2
MMSZ4695-V DC 8.7 8.27 9.14 1 6.6
MMSZ4696-V DD 9.1 8.65 9.56 1 6.9
MMSZ4697-V DE 10 9.5 10.5 1 7.6
MMSZ4698-V DF 11 10.5 11.6 0.05 8.4
MMSZ4699-V DH 12 11.4 12.6 0.05 9.1
MMSZ4700-V DJ 13 12.4 13.7 0.05 9.8
MMSZ4701-V DK 14 13.3 14.7 0.05 10.6
MMSZ4702-V DM 15 14.3 15.8 0.05 11.4
MMSZ4703-V DN 16 15.2 16.8 0.05 12.1
MMSZ4704-V DP 17 16.2 17.9 0.05 12.9
MMSZ4705-V DT 18 17.1 18.9 0.05 13.6
MMSZ4706-V DU 19 18.1 20 0.05 14.4
MMSZ4707-V DV 20 19 21 0.01 15.2
MMSZ4708-V DA 22 20.9 23.1 0.01 16.7
MMSZ4709-V DZ 24 22.8 25.2 0.01 18.2
MMSZ4710-V DY 25 23.8 26.3 0.01 19
MMSZ4711-V EA 27 25.7 28.4 0.01 20.4
MMSZ4712-V EC 28 26.6 29.4 0.01 21.2
MMSZ4713-V ED 30 28.5 31.5 0.01 22.8
MMSZ4714-V EE 33 31.4 34.7 0.01 25
MMSZ4715-V EF 36 34.2 37.8 0.01 27.3
MMSZ4716-V EH 39 37.1 41 0.01 29.6
MMSZ4717-V EJ 43 40.9 45.2 0.01 32.6
MMSZ4681-V to MMSZ4717-V
Document Number 85773
Rev. 1.7, 17-Jul-08
Vishay Semiconductors
www.vishay.com
3
For technical support, please contact: DiodesSSP@vishay.com
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Typical Change of Working Voltage under Operating
Conditions at Tamb=25°C
Figure 3. Typical Change of Working Voltage vs.
Junction Temperature
0
100
200
300
400
500
600
020406080 100 120 140 160
T
amb
- Ambient Temperature (°C)
P
tot
- Total Power Dissipation (mW)
20850
10 15 20
1
10
100
1000
V
Z
- Voltage Change (mV)
V
Z
- Z-Voltage (V)
25
95 9598
Tj = 25 °C
IZ = 5 mA
05
- 60 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
Tj - Junction Temperature (°C)
240
95 9599
0
VZtn = VZt/VZ (25 °C)
0
TK
VZ
= 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
Figure 4. Temperature Coefficient of Vz vs. Z-Voltage
Figure 5. Diode Capacitance vs. Z-Voltage
Figure 6. Forward Current vs. Forward Voltage
- 5
0
5
10
15
VZ - Z-Voltage (V)
95 9600
IZ = 5 mA
0 10 203040 50
TKVZ - Temperature Coefficient
of VZ (10-4/K)
10 15
0
50
100
150
200
C
D
- Diode Capacitance (pF)
V
Z
- Z-Voltage (V)
25
95 9601
20
T
j
= 25 °C
V
R
= 2 V
05
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
IF - Forward Current (mA)
VF - Forward Voltage (V)
Tj = 25 °C
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Document Number 85773
Rev. 1.7, 17-Jul-08
MMSZ4681-V to MMSZ4717-V
Vishay Semiconductors
For technical support, please contact: DiodesSSP@vishay.com
Figure 7. Z-Current vs. Z-Voltage
Figure 8. Z-Current vs. Z-Voltage
820
95 9604
0
20
40
60
80
100
IZ - Z-Current (mA)
Ptot = 500 mW
Tamb = 25 °C
046 12
VZ - Z-Voltage (V)
15 20 25 30
0
10
20
30
40
50
IZ - Z-Current (mA)
VZ - Z-Voltage (V)
35
95 9607
Ptot = 500 mW
Tamb = 25 °C
Figure 9. Differential Z-Resistance vs. Z-Voltage
0 101520
1
10
100
1000
25
95 9606
Tj = 25 °C
IZ = 1 mA
5 mA
10 mA
V
Z
- Z-Voltage (V)
r
Z
- Differential Z-Resistance (Ω)
5
Figure 10. Thermal Response
1
10
100
1000
Zthp - Thermal Resistance for Pulse Cond. (KW)
tp - Pulse Length (ms) 95 9603
10-1 100101102
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
tp/T = 0.05
tp/T = 0.02
tp/T = 0.01
Single Pulse RthJA = 300 K/W
T = Tjmax - Tamb
iZM = (- VZ + (VZ
2 + 4rzj x T/Zthp) 1/2)/(2rzj)
MMSZ4681-V to MMSZ4717-V
Document Number 85773
Rev. 1.7, 17-Jul-08
Vishay Semiconductors
www.vishay.com
5
For technical support, please contact: DiodesSSP@vishay.com
Package Dimensions in millimeters (inches): SOD-123
Rev. 04 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting pad layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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