BC857BW,135 - NEXPERIA - Datasheet.Live

Important notice

Dear Customer,

On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

application markets

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

the references to Nexperia, as shown below.

Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,

use http://www.nexperia.com

Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use

salesaddresses@nexperia.com (email)

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on

the version, as shown below:

reserved

Should be replaced with:

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail

or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and

understanding,

Kind regards,

Team Nexperia

DATA SH EET

Product data sheet

Supersedes data of 1999 Apr 12 2002 Feb 04

DISCRETE SEMICONDUCTORS

BC856W; BC857W; BC858W

PNP general purpose transistors

ook, halfpage

M3D102

2002 Feb 04 2

NXP Semiconductors Product data sheet

PNP general purpose transistors BC856W; BC857W;

BC858W

FEATURES

•Low current (ma x. 10 0 mA)

•Low voltage (max. 65 V).

APPLICATIONS

•General purpose switc hing and amplification.

DESCRIPTION

PNP transistor in a SOT323 plastic package.

NPN complements: BC846W, BC8 47W and BC848W.

MARKING

Note

1. * = -: made in Hong Kong.

* = t: made in Malaysia.

PINNING

TYPE NUMBER MARKING CODE(1)

BC856W 3D*

BC856AW 3A*

BC856BW 3B*

BC857W 3H*

BC857AW 3E*

BC857BW 3F*

BC857CW 3G*

BC858W 3M*

PIN DESCRIPTION

1base

2emitter

3collector

handbook, halfpage

MAM048

Top view

Fig.1 Simplified outline (SOT323; SC70) and

symbol.

2002 Feb 04 3

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

LIMITING VALUES

In accordance with the Absolute Maxi mum System (IEC 60134).

Note

1. Refer to SOT323 standard mounting conditions.

THERMAL CHARACTE RISTICS

Note

1. Refer to SOT323 standard mounting conditions.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter

BC856W − −80 V

BC857W − −50 V

BC858W − −30 V

VCEO collector-emitter voltage open base

BC856W − −65 V

BC857W − −45 V

BC858W − −30 V

VEBO emitter-base voltage open collector − −5 V

ICcollector current (DC) − −100 mA

ICM peak collector current − −200 mA

IBM peak base current − −200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 −200 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

Tamb operating ambient temperature −65 +150 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to

ambient in free air; note 1 625 K/W

2002 Feb 04 4

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

CHARACTERISTICS

Tamb = 25 °C; unless otherwise specified.

Note

1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ICBO collector-base cut-off current VCB = −30 V; IE = 0 − −1−15 nA

VCB = −30 V; IE = 0;

Tj = 150 °C−−−4μA

IEBO emitter-base cu t-off current VEB = −5 V; IC = 0 −−−100 nA

hFE DC current gain IC = −2 mA; VCE = −5 V

BC856W 125 −475

BC857W; BC858 W 125 −800

BC856AW; BC857AW 125 −250

BC856BW; BC857BW 220 −475

BC857CW 420 −800

VCEsat collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − −75 −300 mV

IC = −100 mA; IB = −5 mA;

note 1 − −250 −600 mV

VBEsat base-emitt er saturation voltage IC = −10 mA; IB = −0.5 mA − −700 −mV

IC = −100 mA; IB = −5 mA;

note 1 − −850 −mV

VBE base-emitte r voltage IC = −2 mA; VCE = −5 V −600 −650 −750 mV

IC = −10 mA; VCE = −5 V −−−820 mV

Cccollector capacitance VCB = −10 V; IE = Ie = 0;

f = 1 MHz −−3pF

Ceemitter cap a citance VEB = −0.5 V; IC = Ic = 0;

f = 1 MHz −−12 pF

fTtransition freque ncy VCE = −5 V; IC = −10 mA;

f = 100 MHz 100 −−MHz

Fnoise figure IC = −200 μA; VCE = −5 V;

RS = 2 kΩ; f = 1 kHz;

B = 200 Hz

−−10 dB

2002 Feb 04 5

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

handbook, halfpage

200

300

400

500

hFE

100

MGT711

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.2 DC current gain as a fu nction of collector

current; ty pical values.

BC857AW; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT712

−10

−2

−10

−1

−1−10 −10

−10

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.3 Base-emitter voltage as a function of

collector current; typical values.

BC857AW; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−10

MGT713

−10

−1

−1−10 −10

−10

IC (mA)

VCEsat

(mV)

(1)

(2)(3)

Fig.4 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC857AW; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGT714

−10

−1

−1−10 −10

−10

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.5 Base-emitter saturation v oltage as a

function of collector current; typical values.

BC857AW; IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2002 Feb 04 6

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

handbook, halfpage

400

600

800

1000

hFE

200

MGT715

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.6 DC current gain as a fu nction of collector

current; ty pical values.

BC857BW; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT716

−10

−2

−10

−1

−1−10 −10

−10

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

BC857BW; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−10

MGT717

−10

−1

−1−10 −10

−10

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.8 Collector-emitter saturation voltage as a

function of collector current; typical values.

BC857BW; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGT718

−10

−1

−1−10 −10

−10

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.9 Base-emitter saturation v oltage as a

function of collector current; typical values.

BC857BW; IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2002 Feb 04 7

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

handbook, halfpage

400

600

800

1000

hFE

200

MGT719

−10−2−10−1−1−10 −102−103

IC (mA)

(1)

(2)

(3)

Fig.10 DC current gain as a function of collector

current; ty pical values.

BC857CW; VCE = −5 V.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

−1200

−1000

−800

−600

−400

−200

MGT720

−10

−1

−1−10 −10

−10

IC (mA)

VBE

(mV)

(1)

(2)

(3)

Fig.11 Base-emitter voltage as a func tion of

collector current; typical values.

BC857CW; VCE = −5 V.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

handbook, halfpage

−10

MGT721

−10

−1

−1−10 −10

−10

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

Fig.12 Collector-emitter saturation voltag e as a

function of collector current; typical values.

BC857CW; IC/IB = 20.

(1) Tamb = 150 °C.

(2) Tamb = 25 °C.

(3) Tamb = −55 °C.

handbook, halfpage

MGT722

−10

−1

−1−10 −10

−10

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

Fig.13 Base-emitter saturation voltage as a

function of collector current; typical values.

BC857CW; IC/IB = 20.

(1) Tamb = −55 °C.

(2) Tamb = 25 °C.

(3) Tamb = 150 °C.

2002 Feb 04 8

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

PACKAGE OUTLINE

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT32

97-02-28

2002 Feb 04 9

NXP Semiconductors Pr oduct data sheet

PNP general purpose transistors BC856W; BC857W; BC858W

DATA SHEET STATUS

Notes

1. Please consult the most rec en tly issued document before initiating or co mpleting a design.

2. The product s tatus of device(s) described in this document may have changed since this document was pub lis hed

and may differ in case of multiple devices. The latest product status information is available on the Inter net at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production This document contains the product specification.

DISCLAIMERS

General ⎯ Information in this document is believed to be

accurate and reliable . H ow ev er, NXP Semiconductors

does not give any representations or warranties,

expressed or implied, as to the accuracy or completeness

of such information and shall have no liability for the

consequenc es of use of such information.

Right to make changes ⎯ NXP Semiconductors

reserves the right to make changes to information

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereof.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warranted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reasonably be

expected to result in pe rs onal injury, death or seve re

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

the customer’s own risk .

Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificati on .

Limiting values ⎯ Stress above one or more limiting

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values are stress ratings only and

operation of the device at these or any other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

Terms and conditions of sale ⎯ NXP Semiconductors

products are sold subject to the general terms and

conditions of commercial sale, as published at

http://www.nxp.com/profile/terms, including those

pertaining to warranty, intellectual property rights

infringement and limitation of liability, unless explicitly

otherwise agreed to in writing by NXP Semiconductors. In

case of any incons istency or conflict betw een information

in this document an d such terms and conditio ns, the latter

will prevail.

No offer to sell or license ⎯ Nothing in this document

may be interpreted or construed as an offer to sell products

that is open for accept ance or the grant, c onveyance or

implication of any license under any copyrights, patents or

other industr i al or inte llectual property righ ts.

Export control ⎯ This document as well as the item(s)

described herein may be subject to export control

regulations. Export might require a prior authorization from

national author ities.

Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this docu ment, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

Contact information

For additional information p lease visit: http://www.nxp.com

For sales offices addresses send e-mail to: salesaddresses@nxp.com

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information pr e sent ed in this documen t d oes not fo rm p ar t o f an y q uotation or contra ct, is b elieve d t o b e a ccur ate a nd re li a ble and may be chan ged

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were

made to the content, except for the legal definitions and disclaimers.

Printed in The Netherlands 613514/04/pp10 Date of release: 2002 Feb 04 Docum ent order number: 9397 750 09168