SEMICONDUCTOR BC556/7/8 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES For Complementary With NPN Type BC546/547/548. N E K G J D MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT H Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current VCBO -50 BC558 -30 BC556 -65 BC557 VCEO -45 BC558 -30 BC556 -5 BC557 VEBO -5 BC558 -5 BC556 -100 BC557 IC -100 BC558 -100 BC556 100 BC557 IE BC558 100 PC 625 Junction Temperature Tj 150 Tstg -55 150 1998. 10. 8 Revision No : 3 1 2 3 1. COLLECTOR 2. BASE V 3. EMITTER TO-92 V mA mA 100 Collector Power Dissipation Storage Temperature Range F V C Voltage BC557 F MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M Collector-Base -80 L BC556 DIM A B C D E F G H J K L M N mW 1/3 BC556/7/8 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT - - -15 nA 110 - 450 110 - 800 BC558 110 - 800 BC556 - - -0.65 - - -0.65 BC558 - - -0.65 BC556 - -0.9 -1.1 - -0.9 -1.1 - -0.9 -1.1 ICBO Collector Cut-off Current TEST CONDITION VCB=-30V, IE=0 BC556 DC Current Gain (Note) hFE BC557 Collector-Emitter BC557 Saturation Voltage Base-Emitter BC557 Saturation Voltage VCE(sat) VBE(sat) VCE=-5V, IC=-2mA IC=-100mA, IB=-5mA IC=-100mA, IC=-5mA BC558 Base-Emitter Voltage V VBE(ON) 1 VCE=-5V, IC=-2mA -0.6 - -0.75 V VBE(ON) 2 VCE=-5V, IC=-10mA - - -0.8 V VCE=-5V, IC=-10mA, f=100MHz - 150 - MHz VCB=-10V, f=1MHz, IE=0 - 4.5 - pF - 1.0 10 - 1.0 10 - 1.0 10 fT Transition Frequency Cob Collector Output Capacitance BC556 BC557 Noise Figure V NF VCE=-6V, IC=-0.1mA Rg=10k dB , f=1kHz BC558 NOTE : According to the value of hFE the BC546, BC547, BC548 are classified as follows. CLASSIFICATION hFE 1998. 10. 8 none A B C BC556 110 450 110 220 200 450 BC557 110 800 110 220 200 450 420 800 BC558 110 800 110 220 200 450 420 800 Revision No : 3 - 2/3 BC556/7/8 1998. 10. 8 Revision No : 3 3/3