SQSxxA, SQSxxB, SSNxxA, SSNxxB,
SSWxxA, SSWxxB, SPDxxA, SPDxxB
BI Technologies Corporation
4200 Bonita Place
Fullerton, CA 92835 USA
Website: www.bitechnologies.com
May 28, 2008 page 2 of 4 BI technologies
PACKAGE POWER, WATTS @ 70°C4
QSOP SOIC (Narrow) SOIC (Wide) P-DIP
16 20 24 8 14 16 16 20 24 8 14 16
0.6 0.7 0.8 0.4 0.7 0.8 1.0 1.2 1.2 0.4 0.6 0.8
POWER DERATING CURVE
ENVIRONMENTAL (MIL-R-83401)
Thermal Shock plus Power Conditioning ∆R 0.25%
Short Time Overload ∆R 0.1%
Terminal Strength ∆R 0.1%
Moisture Resistance ∆R 0.2%
Mechanical Shock ∆R 0.25%
Vibration ∆R 0.25%
Low Temperature Operation ∆R 0.05%
High Temperature Exposure ∆R 0.1%
Resistance to Solder Heat ∆R 0.1%
Marking Permanency Per MIL-STD-202, Method 215
Flammability UL-94V-0 Rated
Storage Temperature Range -55°C to +125°C
MECHANICAL
Lead Plating 80/20 Tin Lead (Standard)
100 matte Tin (RoHS)
Lead Material Copper Alloy
Lead Configuration Gull Wing
Lead Coplanarity 0.004” (0.102 mm)
Substrate Material Silicon
Resistor Material Passivated Nichrome
Body Material Molded Epoxy
4 Maximum power per resistor @ 70°C is 100 mW, not to exceed package power.