BP 104 F
BP 104 FS
Silizium-Pin-Fotodiode mit Tageslichtsperrfilter; in SMT
Silicon Pin Photodiode with Daylight Filter; in SMT
Lead (Pb) Free Product - RoHS Compliant
BP 104 F BP 104 FS
2009-04-07 1
Wesentliche Merkmale
Speziell geeignet für Anwendungen bei 950 nm
Kurze Schaltzeit (typ. 20 ns)
DIL-Plastikbauform mit hoher Packungsdichte
Anwendungen
IR-Fernsteuerung von Fernseh- und
Rundfunkgeräten, Videorecordern,
Lichtdimmern, Gerätefernsteuerungen
Lichtschranken für Gleich- und
Wechsellichtbetrieb
Typ
Type Bestellnummer
Ordering Code
BP 104 F Q62702-P0084
BP 104 FS Q65110-A2627
Features
Especially suitable for applications of 950 nm
Short switching time (typ. 20 ns)
DIL plastic package with high packing density
Applications
IR remote control of hi-fi and TV sets, video
tape recorders, dimmers, remote controls of
various equipment
Photointerrupters
2009-04-07 2
BP 104 F, BP 104 FS
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 + 100 °C
Sperrspannung
Reverse voltage VR20 V
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 150 mW
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Fotostrom
Photocurrent
VR = 5 V, Ee = 1 mW/cm2
IP34 ( 25) μA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 950 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10 % von Smax
Spectr al range of sens itivity
S = 10 % of Smax
λ800 1100 nm
Bestrahlungsempfindliche Fläche
Radiant sensitive area A4.84 mm2
Abmessung der bestrahlungsempfindlichen Fläche
Dimensions of radiant sensitive area L×B
L×W2.20 ×2.20 mm ×mm
Halbwinkel
Half angle ϕ±60 Grad
deg.
Dunkelstrom, VR = 10 V
Dark current IR2 ( 30) nA
Spektrale Fotoempfindlichkeit
Spectr al sensitivity Sλ0.70 A/W
Quantenausbeute
Quantum yield η0.90 Electrons
Photon
Leerlaufspannung, Ee = 0.5 mW/cm2
Open-circuit voltage VO330 ( 250) mV
BP 104 F, BP 104 FS
2009-04-07 3
Kurzschlussstrom, Ee = 0.5 mW/cm2
Short-circuit current ISC 17 μA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 μA
tr, tf20 ns
Durchlassspannung, IF = 100 mA, E = 0
Forward voltage VF1.3 V
Kapazität, VR = 0 V, f = 1 MHz, E = 0
Capacitance C048 pF
Temperaturkoeffizient von VO
Temperature coefficient of VO
TCV– 2.6 mV/K
Temperaturkoeffizient von ISC
Temperature coefficient of ISC
TCI0.18 %/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
VR = 10 V
NEP 3.6 ×10–14
Nachweisgrenze, VR = 10 V
Detection limit D* 6.1 ×1012
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics (cont’d)
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
W
Hz
------------
cm Hz×
W
--------------------------
BP 104 F, BP 104 FS
2009-04-07 4
Relative Spectral Sensitivity
Srel = f (λ)
Dark Current
IR = f (VR), E = 0
Directional Characteristics
Srel = f (ϕ)
λ
OHF00368
0
rel
S
700
20
40
60
80
%
100
nm
800 900 1000 1200
OHFD1781
R
Ι
00
VR
pA
V
5 10 15 20
1000
2000
3000
4000
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
Photocurrent IP = f (Ee), VR = 5 V
Open-Circuit Voltage VO = f (Ee)
Capacitance
C = f (VR), f = 1 MHz, E = 0
E
OHF01056
e
0
10
P
Ι
-1
10 10
1
10
2
10
4
10
0
10
1
10
2
10
34
10
3
10
2
10
1
10
10
0
V
O
μ
AmV
Ι
P
V
O
2
W/cmμ
V
OHF01778
R
-2
10
C
10 -1 10 010 110 2
V
0
10
20
30
40
50
pF
60
Total Power Dissipation
Ptot = f (TA)
Dark Current
IR = f (TA), VR = 10 V, E = 0
T
OHF00958
A
0
tot
P
020 40 60 80 ˚C 100
mW
20
40
60
80
100
120
140
160
T
OHF00082
A
-1
10 0
R
Ι
10
0
10
1
10
2
10
3
nA
20 40 60 80 ˚C 100
BP 104 F, BP 104 FS
2009-04-07 5
Maßzeichnung
Package Outlines
Maße in mm (inch) / Dimensions in mm (inch).
GEOY6075
4.0 (0.157)
3.7 (0.146) 4.3 (0.169)
4.5 (0.177)
5.4 (0.213)
4.9 (0.193)
0.6 (0.024)
0.4 (0.016)
0.6 (0.024)
0.4 (0.016)
1.2 (0.047)
0.7 (0.028)
0.3 (0.012)
0.5 (0.020)
0.8 (0.031)
0.6 (0.024)
Cathode marking
0.6 (0.024)
0.8 (0.031)
1.9 (0.075)
2.2 (0.087)
3.0 (0.118)
3.5 (0.138)
0.6 (0.024)
0.4 (0.016)
Chip position
0.4 (0.016)
0.6 (0.024)
0.35 (0.014)
0.2 (0.008)
0 ... 5˚
5.08 (0.200)
spacing
Approx. weight 0.1 g
1.4 (0.055)
Photosensitive area
2.20 (0.087) x 2.20 (0.087)
1.8 (0.071)
BP 104 F
4.5 (0.177)
4.3 (0.169)
4.0 (0.157)
3.7 (0.146)
1.5 (0.059)
1.7 (0.067)
0.9 (0.035)
0.7 (0.028)
Photosensitive area Cathode lead
GEOY6861
0.3 (0.012)
6.7 (0.264)
6.2 (0.244)
1.2 (0.047)
1.1 (0.043)
Chip position
0...5˚
0.2 (0.008)
0.1 (0.004)
1.1 (0.043)
0.9 (0.035)
2.20 (0.087) x 2.20 (0.087)
1.6 (0.063)
(0...0.004)
±0.2 (0.008)
0...0.1
BP 104 FS
2009-04-07 6
BP 104 F, BP 104 FS
Lötbedingungen BP 104 FS Vorbehandlung nach JEDEC Level 4
Soldering Conditions Preconditioning acc. to JEDEC Level 4
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Wellenlöten (TTW) BP 104 F (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
BP 104 F, BP 104 FS
2009-04-07 7
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
Attention please! The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in que stion please contact our Sales Organizatio n.
Packing
Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-supp ort devices or systems 2 with the express written approval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be im planted in the human body, or (b) to sup port and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the health of the us er may be endangered.