WIDE BODY, HIGH ISOLATION OPTOCOUPLERS DESCRIPTION The CNW82, CNW83, CNW84 and CNW85 optocouplers consist of a GaAs infrared emitting diode which is optically coupled to an NPN phototransistor. The CNW82 and CNW84 do not have the base pin connected for improved noise immunity. CNW82 CNW83 CNW84 CNW85 6 1 FEATURES 6 * Wide body DIL encapsulation, with a pin distance of 10.16 mm. * Minimum creepage distance 10 mm. 1 * High current transfer ratio and Low Saturation Voltage, making the device suitable for use with TTL integrated SCHEMATIC circuits. 1 * High degree of AC and DC insulation (5900 V (RMS) and 8340 V (DC)). NC 2 6 1 6 5 2 5 4 3 * Minimum 2 mm isolation thickness between emitter and 3 NC detector. (CNW84/85 only). CNW82/84 * An external clearance 0f 9.6 mm minimum and an external creepage distance of 10 mm minimum. CNW83/85 PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. NO CONNECTION * Collector-Emitter Breakdown Voltage: 50 V (CNW82/83 only). * Collector-Emitter Breakdown Voltage: 80 V (CNW84/85 only). 4 NC PIN 1. ANODE 2. CATHODE 3. NO CONNECTION 4. EMITTER 5. COLLECTOR 6. BASE * UL recognized (File # E90700) ABSOLUTE MAXIMUM RATINGS Parameter EMITTER Forward Current - Continuous Forward Current - Peak (PW = 100s, 120pps) Reverse Voltage Total Power Dissipation @ TA = 25C Symbol Value Units IF 100 mA IF(pk) 3 A VR PD Derate above 25C DETECTOR IC Collector Current-Continuous Emitter-Collector Voltage Collector-Emitter Voltage Collector-Base Voltage VECO (CNW82/CNW83) (CNW84/CNW85) (CNW83) (CNW85) Total Power Dissipation @ TA = 25C Derate above 25C TOTAL DEVICE Storage Temperature Range Ambient Operating Temperature Range Lead Soldering Temperature (1/16" from case, 10 sec. duration) DS300205 1/25/01 VCEO VCBO 5 V 200 mW 2.0 mW/C 100 mA 7 V 50 80 70 V V 120 200 mW 2.0 mW/C Tstg -55 to 150 C TA -40 to 100 C TL 260 C PD @ 2001 Fairchild Semiconductor Corporation 1 OF 6 www.fairchildsemi.com WIDE BODY, HIGH ISOLATION OPTOCOUPLERS CNW82, CNW83, CNW84, CNW85 ELECTRICAL CHARACTERISTICS (TA =25C Unless otherwise specified) Parameter Test Conditions EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR (CNW82/83) Collector-Emitter Breakdown Voltage (CNW84/85) Emitter-Collector Breakdown Voltage Collector-Base Breakdown Voltage (CNW83) Collector-Emitter Dark Current Collector-Base Cut-off Current (TA = 70C) (CNW83/85) Turn-on Time Turn-off Time Unit (IF = 10 mA) VF -- 1.20 1.50 V (VR = 5.0 V) IR -- 10 A (IC = 1.0 mA) BVCEO -- 50 100 100 -- (IE = 0.1 mA) BVECO BVCBO 80 -- V 7 10 -- 70 100 -- V 120 140 -- -- 50 nA V (VCE = 10 V, IF = 0) ICEO -- 1 0.1 10 A (VCB = 10 V, IF = 0) ICBO -- -- 20 nA VCE(sat) -- 0.15 0.4 V (t = 1.0 min.)(1) (RMS Value) (t = 1.0 min.)(1) VISO 8.34 -- -- 5.9 -- -- kV (VI-O = 500 V) RISO 1 10 -- T! CISO -- 0.4 0.4 0.8 1 pF -- (CNW84/85) (VI-O = 0, f = 1.0 MHz) (IF = 10 mA, VCE = 0.4 V) (IF = 10 mA, VCE = 5 V) 0.63 1.5 3.2 (CNW83/85) (VCB = 10 V, f = 1 MHz) CCB -- -- 4.5 3 -- -- -- 12 -- -- 3 -- -- 12 -- Isolation Capacitance Capacitance Max (DC Value) Isolation Resistance Current Transfer Ratio Typ (IC = 4 mA, IF = 10 mA) Collector-Emitter Saturation Voltage Isolation Voltage Min (IC = 0.1 mA) (CNW85) (TA = 25C) COUPLED Symbol (CNW82/83) (IC = 2 mA, VCC = 5 V, RL = 100 !) (IC = 2 mA, VCC = 5 V, RL = 1 k!) (IC = 2 mA, VCC = 5 V, RL = 100 !) (IC = 2 mA, VCC = 5 V, RL = 1 k!) CTR TON TOFF % pF s s NOTE: 1. Every product is tested with pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. www.fairchildsemi.com 2 OF 6 1/25/01 DS300205 WIDE BODY, HIGH ISOLATION OPTOCOUPLERS CNW82, CNW83, CNW84, CNW85 Fig. 2 Collector Current vs. Forward Current (for CNW84 and CNW85) Fig. 1 Forward Current vs. Forward Voltage 10 100 VCE = 24 V IC - COLLECTOR CURRENT IF - FORWARD CURRENT (mA) 1 75 50 VCE = 15 V 10-1 VCE = 0.4 V VCE = 5 V 10-2 25 10-3 Normalize to: VCE = 0.4 V IF = 10 mA TA = 25C TA = 25C 0 0 0.5 1 10-4 1.5 10-1 1 VF - FORWARD VOLTAGE (V) Fig. 3 Collector Current vs. Forward Current (for CNW82 and CNW83) 103 Fig. 4 Collector Current vs. Collector-Emitter Voltage 102 TA = 25C 0.4 V IF = 100 mA V 10 IC - COLLECTOR CURRENT (mA) CE =2 4 15 V V 5V 100 TA = 25C IC - COLLECTOR CURRENT (mA) 102 10 IF - FORWARD CURRENT (mA) 1 10-1 10-2 IF = 75 mA IF = 50 mA 50 IF = 25 mA IF = 10 mA IF = 2.5 mA 10-3 0 10-1 1 102 10 103 0 Fig. 5 Collector Current vs. Ambient Temperature (for CNW82 and CNW83) 10 Fig. 6 Collector Current vs. Ambient Temperature (for CNW84 and CNW85) 20 1.5 IF = 10 mA, VCE = 0.4 V IF = 10 mA, VCE = 5 V typ IC - COLLECTOR CURRENT IC - COLLECTOR CURRENT (mA) 5 VCE - COLLECTOR-EMITTER VOLTAGE (V) IF - FORWARD CURRENT (mA) IF = 10 mA VCE = 0.4 V 15 IF = 10 mA VCE = 5 V 10 typ 5 min 1.3 VCE = 5 V 1.1 0.9 VCE = 0.4 V 0.7 IF = 1 mA NORMALIZED TO VCE = 5 V TA = 25C 0 -50 0 50 100 150 0.5 TA - AMBIENT TEMPERATURE (C) -50 0 50 100 150 200 TA - AMBIENT TEMPERATURE (C) DS300205 1/25/01 3 OF 6 www.fairchildsemi.com WIDE BODY, HIGH ISOLATION OPTOCOUPLERS CNW82, CNW83, CNW84, CNW85 Fig. 7 Collector Current vs. Ambient Temperature (for CNW84 and CNW85) Fig. 8 Collector-Emitter Dark Current vs. Junction Temperature 105 ICEO - COLLECTOR-EMITTER DARK CURRENT (nA) IC - COLLECTOR CURRENT 2.0 1.6 1.2 VCE = 5 V 0.8 VCE = 0.4 V IF = 10 mA NORMALIZED TO VCE = 0.4 V TA = 25C 0.4 0 -50 0 50 100 150 200 TA - AMBIENT TEMPERATURE (C) 104 VCE = 50 V 10V 103 VCE = 5 V 102 10 1 10-1 25 45 65 85 105 125 TJ - JUNCTION TEMPERATURE (C) Fig. 10 Rise and Fall Time vs. Collector Current Fig. 9 Collector-Emitter Saturation Voltage vs. Collector Current 60 TON/TOFF -SWITCHING TIME (s) VCE(SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (mV) 103 IF = 5 mA 102 100 mA 10 mA 10 25 mA 10-2 50 mA 40 RL = 5 k ! 20 RL = 1 k ! RL = 100 ! 0 10-1 1 10 0.1 1 10 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) www.fairchildsemi.com TA = 25C 4 OF 6 1/25/01 DS300205 WIDE BODY, HIGH ISOLATION OPTOCOUPLERS CNW82, CNW83, CNW84, CNW85 Package Dimensions (Through Hole) Package Dimensions (Surface Mount) PIN 1 ID. PIN 1 ID. 0.354 (9.00) TYP 0.350 (8.90) MAX SEATING PLANE SEATING PLANE 0.354 (9.00) TYP 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.115 (2.92) 0.350 (8.90) MAX 0.496 [12.60] 0.070 (1.78) 0.045 (1.14) 0.020 [0.51] 0.020 (0.51) MIN 0.200 (5.08) 0.115 (2.92) 0.154 (3.90) 0.120 (3.05) 0.022 (0.56) 0.016 (0.41) 0.022 (0.56) 0.016 (0.41) 0.016 (0.40) 0.008 (0.20) 0 to 15 0.016 (0.40) MIN 0.016 (0.40) 0.008 (0.20) 0.100 (2.54) TYP 0.400 (10.16) TYP 0.100 (2.54) TYP NOTE All dimensions are in inches (millimeters) DS300205 1/25/01 5 OF 6 www.fairchildsemi.com WIDE BODY, HIGH ISOLATION OPTOCOUPLERS DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. www.fairchildsemi.com www.fairchildsemi.com 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. (c) 2000 Fairchild Semiconductor Corporation 6 OF 6 1/25/01 DS300205