ee FAIRCHILD ee SEMICONDUCTOR wm FDV301N Digital FET , N-Channel General Description This N-Channel logic level enhancement mode field effect transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, this one N-channel FET can replace several different digital transistors, with different bias resistor values. Mark:301 March 1999 Features = 25V, 0.22 A continuous, 0.5 A Peak. Roson = 5 82 @ Ves= 2.7 V Rosiom = 4 & @ Veg= 4.5 V. = Very low level gate drive requirements allowing direct operation in 3V circuits. Vegan < 1.5V. = Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors with one DMOS FET. . ee! INVERTER APPLICATION Vec D OUT SOT-23 Absolute Maximum Ratings = T, = 25C unless other wise noted IN o G s Ss GND Symbol! | Parameter FDV301N Units Vogs: Voc | Drain-Source Voltage, Power Supply Voltage 25 Vv Voss: V, | Gate-Source Voltage, V,, 8 Vv ly bo Drain/Output Current - Continuous 0.22 A 0.5 Po Maximum Power Dissipation 0.35 Ww TiT st Operating and Storage Temperature Range -55 to 150 c ESD Electrostatic Discharge Rating MIL-STD-883D 6.0 kV Human Body Model (100pf/ 1500 Ohm) THERMAL CHARACTERISTICS Row | Thermal Resistance, Junction-to-Ambient 357 CAV 1999 Fairchild Semiconductor Corporation FDV301N Rev.FInverter Electrical Characteristics (T, = 25C unless otherwise noted) Symbot Parameter Conditions Min Typ Max Units Is tom Zero Input Voltage Output Current Veg = 20V, V=0V 1 pA Vim Input Voltage Veg = 5V, 1, = 10 HA 0.5 Vv Vs ton) Va = 0.3 V, I, = 0.005 A 1 Vv Ro ren Output to Ground Resistance V,=27V, 1L=02A 4 5 Q Electrical Characteristics (T, = 25 C unless otherwise noted ) Symbol _| Parameter | Conditions | Min | Typ | Max | Units OFF CHARACTERISTICS BVoss Drain-Source Breakdown Voltage Veg FOV, |,= 250 pA 25 Vv ABV, ./AT, | Breakdown Voltage Temp. Coefficient |,= 250 yA, Referenced to 25C 25 mV /C loss Zero Gate Voltage Drain Current Vos5 = 20V, Vg= OV 1 HA |T, = 56C 10 WA loss Gate - Body Leakage Current Vos = 8V, Vog= 0V 100 | nA ON CHARACTERISTICS (noe) AVesnfAT, Gate Threshold Voltage Temp. Coefficient |, = 250 HA, Referenced to 25C -2.1 mV /C Vesen) Gate Threshold Voltage Vos = Ves: Ip = 250 WA 065 | 085 | 1.5 Vv Resco) Static Drain-Source Or-Resistance Veg =2.7V, 1, =0.2A 3.8 Q T, =125C 63 Veg =4.5V, 1 =0.4A 31 loxom On-State Drain Current Veg = 2.7 V, Vo5g = 5V 02 A Ors Forward Transconductance Vpg = 5 V, [= 0.4A 0.2 s DYNAMIC CHARACTERISTICS om Input Capacitance Vog = 10 V, Veg = OV, 95 pF Con Output Capacitance f= 1.0MHz 6 pF CL Reverse Transfer Capacitance 13 pF SWITCHING CHARACTERISTICS (not) toon) Tum - On Delay Time Von =6V, | =0.5A, 3.2 8 ns t, Tum - On Rise Time Ves =4.5V, Ren = 50 2 6 15 ns toxon Tum - Off Delay Time 35 8 ns t Tum - Off Fall Time 3.5 8 ns Q, Total Gate Charge Vos = BV, = 0.2A, 049 | 07 nc Q, Gate-Source Charge Ves =4.5V 0.22 nC Q, Gate-Drain Charge 0.07 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I, Maximum Continuous Drain-Source Diode Forward Current 0.29 A Vep Drain-Source Diode Forward Voltage [Ves =OV, 1,=0.29A (note) 0.8 12 Vv Note: Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0%. FDV301N Rev.FTypical Electrical Characteristics 0.5 Vos = 4.5V 4.4 3.5 2 we a cs 1p . DRAIN-SOURCE CURRENT (A) o 90 a5 1.5 2 2.5 3 1 Vos , DRAIN-SOURCE VOLTAGE (Vv) Figure 1. On-Region Characteristics. RDS(ON) NORMALIZED DRAIN-SOURCE ON-RESISTANCE iS) 08 06 -50 -25 0 25 50 75 100 125 150 T,, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. 0.2 Vg = 5.0V T= 58C Veo ff 128C 0.45 7 l/| ip. DRAIN CURRENT (A) o o a os 1 15 2 25 Ves GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. R pasion), NORMALIZED N DRAIN-SOURCE ON-RESISTANCE o 0.6 oO O41 0.2 03 04 Os Ip . DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 15 = tp = 0.2 2 D 3 12 8 26C | apse z 4 t wn g | Ww S68 S| eee B 3 a aw oO 2 25 3 3.5 4 V gg, GATE TO SOURCE VOLTAGE (V) Figure 4. On Resistance Variation with Gate-To-Source Voltage. 0.2 a.t 0.01 0.001 1, REVERSE DRAIN CURRENT (A) 0.0001 0.2 a4 06 O8 1 1.2 Ve0 BODY DIODE FORWARD VOLTAGE [V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV301N Rev.FTypical Electrical And Thermal Characteristics 5 1 30 = Ip = 0.2 Vps = 5V na g 4 LAV < ASI 3 g 10 S L 5 9 7 g 5 ES B2 s z : r & 3 w 6 # 5 | 2 4 wo o > 1 0 o4 05 1 2 5 10 268 0 0.1 0.2 0.3 04 Os 06 bg DRAIN TO SOURCE VOLTAGE (V) Qq . GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 08 i 2 2 a Ves = 2.7V SINGLE PULSE Roa = 357 C/W Ta = 25C Ig, RAIN CURRENT (A) 2 o N = 2 5 10 15 25 Vos , DRAI N-SOURCE VOLTAGE {V) wn = Figure 9. Maximum Safe Operating Area. 0.5 w oO 2 02 Ec 33 04 eo os az us Sf 0.02 32 Ze 0.01 2% Single = & 9.005 9 es 2 0.002 0.001 0.0001 0.001 0.01 Figure 11. Transient Thermal Response Curve. Figure 8. Capacitance Characteristics. 5 4 SINGLE PULSE Reva =357 CW _ Ta = 25C 23 6 = 02 0.001 0.01 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) 35 Figure 10. Single Pulse Maximum Power Dissipation. Raja (= nt) * Raa R glA = 357 *C/W L to -tp" Ty-Ty =P "Roa ) Duty Cycle, D=t, 45 0.1 1 10 100 300 t, , TIME (sec) FDV301N Rev.FTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR UHC CoolFET MICROWIRE VCX CROSSVOLT POP E?CMOS PowerTrench FACT qQs FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTO SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or This datasheet contains the design specifications for In Design product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.