LM113QML www.ti.com SNVS367 - DECEMBER 2010 LM113QML Reference Diode Check for Samples: LM113QML FEATURES DESCRIPTION * * The LM113 are temperature compensated, low voltage reference diodes. They feature extremelytight regulation over a wide range of operating currents in addition to an unusually-low breakdown voltage and good temperature stability. 1 2 * * Low Breakdown Voltage: 1.220V Dynamic Impedance of 0.3 from 500 A to 20 mA Temperature Stability Typically 1% over-55C to 125C Range Tight Tolerance: 5% or 1% - The characteristics of this reference recommend it for use in bias-regulation circuitry, in low-voltage power supplies or in battery powered equipment. The fact that the breakdown voltage is equal to a physical property of silicon--the energyband gap voltage--makes it useful for many temperature-compensation and temperature-measurement functions. The diodes are synthesized using transistors and resistors in a monolithic integrated circuit. As such, they have the same low noise and long term stability as modern IC op amps. Further, output voltage of the reference depends only on highly-predictable properties of components in the IC; so they can be manufactured and supplied to tight tolerances. Connection Diagrams Figure 1. 2-Pin PFM See NDU0002A Package N/C 1 10 V+ N/C 2 9 N/C N/C 3 8 N/C N/C 4 7 N/C V- 5 6 N/C Figure 2. 10-Pin CLGA See NAC0010A Package 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright (c) 2010, Texas Instruments Incorporated LM113QML SNVS367 - DECEMBER 2010 www.ti.com Schematic Diagram These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS (1) Power Dissipation (2) 100 mW Reverse Current 50 mA Forward Current 50 mA -65C TA +150C Storage Temperature Range Lead Temperature (Soldering, 10 seconds) 300C Maximum Junction Temperature (TJmax) +150C -55C TA +125C Operating Temperature Range Thermal Resistance JA PFM (Still Air) 440C/W PFM (500LF / Min Air Flow) JC Package Weight CLGA (Still Air) 218C/W CLGA (500LF / Min Air Flow) 140C/W PFM 80C/W CLGA 27C/W PFM 275mg CLGA 220mg ESD Tolerance (3) (1) (2) (3) 2 TBD 4000V Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. Theensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), JA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/JA or the number given in the Absolute Maximum Ratings, whichever is lower. Human body model, 1.5K in series with 100pF. Submit Documentation Feedback Copyright (c) 2010, Texas Instruments Incorporated Product Folder Links: LM113QML LM113QML www.ti.com SNVS367 - DECEMBER 2010 Table 1. QUALITY CONFORMANCE Mil-Std-883, Method 5005 - Group A Subgroup Description Temp (C) 1 Static tests at +25 2 Static tests at +125 3 Static tests at -55 4 Dynamic tests at +25 5 Dynamic tests at +125 6 Dynamic tests at -55 7 Functional tests at +25 8A Functional tests at +125 8B Functional tests at -55 9 Switching tests at +25 10 Switching tests at +125 11 Switching tests at -55 12 Settling time at +25 13 Settling time at +125 14 Settling time at -55 LM113 ELECTRICAL CHARACTERISTICS DC PARAMETERS Symbol VZR Parameter Zener Voltage VZR Delta Zener Voltage VF Forward Voltage Drop RR Reverse Dynamic Impedance (1) Conditions Notes IR = 1 mA Min Max Unit Subgroups 1.16 1.28 V 1 1.157 2, 3 1.283 V 0.5mA IR 20mA 15 mV 1 0.5mA IR 10mA 15 mV 2, 3 IF = 1mA 1.0 V 1, 2, 3 1.0 4 0.8 4 Min Max Unit Subgroups -0.02 0.02 V 1 IR = 1mA See (1) IR = 10mA Specified parameter, not tested. LM113 ELECTRICAL CHARACTERISTICS DC DRIFT PARAMETERS Delta Calculations performed on QMLV devices at Group B, Subgroup 5, only. Symbol VZR Parameter Zener Voltage Conditions IR = 1mA Notes Submit Documentation Feedback Copyright (c) 2010, Texas Instruments Incorporated Product Folder Links: LM113QML 3 LM113QML SNVS367 - DECEMBER 2010 www.ti.com LM113-1 ELECTRICAL CHARACTERISTICS DC PARAMETERS Symbol Parameter VZR Zener Voltage VZR Delta Zener Voltage VF Forward Voltage Drop RR Reverse Dynamic Impedance (1) Conditions Notes Subgroups Min Max Unit 1.210 1.232 V 1 1.206 1.234 V 2, 3 0.5mA IR 20mA 15 mV 1 0.5mA IR 10mA 15 mV 2, 3 IF = 1mA 1.0 V 1, 2, 3 1.0 4 0.8 4 IR = 1 mA IR = 1mA See (1) IR = 10mA Specified parameter, not tested. LM113-1 Electrical Characteristics DC Drift Parameters Delta Calculations performed on QMLV devices at Group B, Subgroup 5, only. Symbol VZR 4 Parameter Zener Voltage Conditions IR = 1mA Submit Documentation Feedback Notes Min Max Unit Subgroups -0.02 0.02 V 1 Copyright (c) 2010, Texas Instruments Incorporated Product Folder Links: LM113QML LM113QML www.ti.com SNVS367 - DECEMBER 2010 TYPICAL PERFORMANCE CHARACTERISTICS Temperature Drift Reverse Dynamic Impedance Figure 3. Figure 4. Reverse Characteristics Reverse Characteristics Figure 5. Figure 6. Reverse Dynamic Impedance Noise Voltage Figure 7. Figure 8. Submit Documentation Feedback Copyright (c) 2010, Texas Instruments Incorporated Product Folder Links: LM113QML 5 LM113QML SNVS367 - DECEMBER 2010 www.ti.com TYPICAL PERFORMANCE CHARACTERISTICS (continued) Forward Characteristics Response Time Figure 9. Figure 10. Maximum Shunt Capacitance Figure 11. 6 Submit Documentation Feedback Copyright (c) 2010, Texas Instruments Incorporated Product Folder Links: LM113QML LM113QML www.ti.com SNVS367 - DECEMBER 2010 TYPICAL APPLICATIONS Figure 12. Amplifier Biasing for Constant Gain with Temperature Figure 13. Constant Current Source Adjust for 0V at 0C Adjust for 100 mV/C Figure 14. Thermometer Submit Documentation Feedback Copyright (c) 2010, Texas Instruments Incorporated Product Folder Links: LM113QML 7 LM113QML SNVS367 - DECEMBER 2010 www.ti.com Figure 15. Level Detector for Photodiode Solid tantalum. Figure 16. Low Voltage Regulator 8 Submit Documentation Feedback Copyright (c) 2010, Texas Instruments Incorporated Product Folder Links: LM113QML LM113QML www.ti.com SNVS367 - DECEMBER 2010 REVISION HISTORY Released Revision 12/16/2010 A Section New release to corporate format Changes 2 MDS data sheets converted into one Corp. data sheet format. MDSs MNLM113-X Rev 1C1 and MNLM113-1-X Rev. 2A1 will be archived. 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