110
29
38
47
56
N/C
N/C
N/C
N/C
V-
V+
N/C
N/C
N/C
N/C
LM113QML
www.ti.com
SNVS367 –DECEMBER 2010
LM113QML Reference Diode
Check for Samples: LM113QML
1FEATURES DESCRIPTION
The LM113 are temperature compensated, low
2• Low Breakdown Voltage: 1.220V voltage reference diodes. They feature extremely-
• Dynamic Impedance of 0.3Ωfrom 500 μA to 20 tight regulation over a wide range of operating
mA currents in addition to an unusually-low breakdown
• Temperature Stability Typically 1% over−55°C voltage and good temperature stability.
to 125°C Range The diodes are synthesized using transistors and
• Tight Tolerance: ±5% or ±1% resistors in a monolithic integrated circuit. As such,
they have the same low noise and long term stability
– The characteristics of this reference as modern IC op amps. Further, output voltage of the
recommend it for use in bias-regulation reference depends only on highly-predictable
circuitry, in low-voltage power supplies or properties of components in the IC; so they can be
in battery powered equipment. The fact that manufactured and supplied to tight tolerances.
the breakdown voltage is equal to a
physical property of silicon—the energy-
band gap voltage—makes it useful for
many temperature-compensation and
temperature-measurement functions.
Connection Diagrams
Figure 1. 2-Pin PFM Figure 2. 10-Pin CLGA
See NDU0002A Package See NAC0010A Package
1Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Copyright © 2010, Texas Instruments Incorporated
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
LM113QML
SNVS367 –DECEMBER 2010
www.ti.com
Schematic Diagram
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ABSOLUTE MAXIMUM RATINGS(1)
Power Dissipation(2) 100 mW
Reverse Current 50 mA
Forward Current 50 mA
Storage Temperature Range −65°C ≤TA≤+150°C
Lead Temperature (Soldering, 10 seconds) 300°C
Maximum Junction Temperature (TJmax) +150°C
Operating Temperature Range −55°C ≤TA≤+125°C
Thermal Resistance θJA PFM (Still Air) 440°C/W
PFM (500LF / Min Air Flow) TBD
CLGA (Still Air) 218°C/W
CLGA (500LF / Min Air Flow) 140°C/W
θJC PFM 80°C/W
CLGA 27°C/W
Package Weight PFM 275mg
CLGA 220mg
ESD Tolerance(3) 4000V
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the
Electrical Characteristics. Theensured specifications apply only for the test conditions listed. Some performance characteristics may
degrade when the device is not operated under the listed test conditions.
(2) The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature),
θJA (package junction to ambient thermal resistance), and TA(ambient temperature). The maximum allowable power dissipation at any
temperature is PDmax = (TJmax - TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower.
(3) Human body model, 1.5KΩin series with 100pF.
2Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated
Product Folder Links: LM113QML
LM113QML
www.ti.com
SNVS367 –DECEMBER 2010
Table 1. QUALITY CONFORMANCE
Mil-Std-883, Method 5005 - Group A
Subgroup Description Temp (°C)
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
12 Settling time at +25
13 Settling time at +125
14 Settling time at -55
LM113 ELECTRICAL CHARACTERISTICS DC PARAMETERS Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
1.16 1.28 V 1
VZR Zener Voltage IR= 1 mA 1.157 1.283 V 2, 3
0.5mA ≤IR≤20mA 15 mV 1
ΔVZR Delta Zener Voltage 0.5mA ≤IR≤10mA 15 mV 2, 3
VFForward Voltage Drop IF= 1mA 1.0 V 1, 2, 3
IR= 1mA 1.0 Ω4
RRReverse Dynamic Impedance See(1)
IR= 10mA 0.8 Ω4
(1) Specified parameter, not tested.
LM113 ELECTRICAL CHARACTERISTICS DC DRIFT PARAMETERS
Delta Calculations performed on QMLV devices at Group B, Subgroup 5, only. Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
VZR Zener Voltage IR= 1mA -0.02 0.02 V 1
Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Links: LM113QML
LM113QML
SNVS367 –DECEMBER 2010
www.ti.com
LM113-1 ELECTRICAL CHARACTERISTICS DC PARAMETERS Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
1.210 1.232 V 1
VZR Zener Voltage IR= 1 mA 1.206 1.234 V 2, 3
0.5mA ≤IR≤20mA 15 mV 1
ΔVZR Delta Zener Voltage 0.5mA ≤IR≤10mA 15 mV 2, 3
VFForward Voltage Drop IF= 1mA 1.0 V 1, 2, 3
IR= 1mA 1.0 Ω4
RRReverse Dynamic Impedance See(1)
IR= 10mA 0.8 Ω4
(1) Specified parameter, not tested.
LM113-1 Electrical Characteristics DC Drift Parameters
Delta Calculations performed on QMLV devices at Group B, Subgroup 5, only. Sub-
Symbol Parameter Conditions Notes Min Max Unit groups
VZR Zener Voltage IR= 1mA -0.02 0.02 V 1
4Submit Documentation Feedback Copyright © 2010, Texas Instruments Incorporated
Product Folder Links: LM113QML
LM113QML
www.ti.com
SNVS367 –DECEMBER 2010
TYPICAL PERFORMANCE CHARACTERISTICS
Temperature Drift Reverse Dynamic Impedance
Figure 3. Figure 4.
Reverse Characteristics Reverse Characteristics
Figure 5. Figure 6.
Reverse Dynamic Impedance Noise Voltage
Figure 7. Figure 8.
Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 5
Product Folder Links: LM113QML
LM113QML
www.ti.com
SNVS367 –DECEMBER 2010
TYPICAL APPLICATIONS
Figure 12. Amplifier Biasing for Constant Gain with Temperature
Figure 13. Constant Current Source
Adjust for 0V at 0°C
Adjust for 100 mV/°C
Figure 14. Thermometer
Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 7
Product Folder Links: LM113QML
LM113QML
www.ti.com
SNVS367 –DECEMBER 2010
REVISION HISTORY
Released Revision Section Changes
12/16/2010 A New release to corporate format 2 MDS data sheets converted into one Corp. data
sheet format. MDSs MNLM113-X Rev 1C1 and
MNLM113-1-X Rev. 2A1 will be archived.
Copyright © 2010, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Links: LM113QML
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest
issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and
complete. All semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale
supplied at the time of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components as meeting ISO/TS16949 requirements, mainly for automotive use. In any case of use of
non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
Products Applications
Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive
Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications
Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers
DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps
DSP dsp.ti.com Energy and Lighting www.ti.com/energy
Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial
Interface interface.ti.com Medical www.ti.com/medical
Logic logic.ti.com Security www.ti.com/security
Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense
Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video
RFID www.ti-rfid.com
OMAP Applications Processors www.ti.com/omap TI E2E Community e2e.ti.com
Wireless Connectivity www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2013, Texas Instruments Incorporated
