Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V 48
ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V 30 A
IDM Pulsed Drain Current 190
PD @TC = 25°C Power Dissipation 69 W
Linear Derating Factor 0.56 W/°C
VGS Gate-to-Source Voltage ± 10 V
VGSM Gate-to-Source Voltage 14 V
(Start Up Transient, tp = 100µs)
EAS Single Pulse Avalanche Energy270 mJ
IAR Avalanche Current29 A
EAR Repetitive Avalanche Energy6.9 mJ
dv / dt Peak Diode Recovery dv/dt 5.0 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
11/18/97
IRL3202
PRELIMINARY HEXFET® Power MOSFET
PD 9.1695A
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
S
D
G
Absolute Maximum Ratings
Parameter Typ. Max. Units
RqJC Junction-to-Case ––– 1.8
RqCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RqJA Junction-to-Ambient ––– 62
Thermal Resistance
VDSS = 20V
RDS(on) = 0.016W
ID = 48A
TO-220AB
Description
lAdvanced Process Technology
lOptimized for 4.5V-7.0V Gate Drive
lIdeal for CPU Core DC-DC Converters
lFast Switching
IRL3202
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA
DV(BR)DSS/DTJBreakdown Voltage Temp. Coefficient ––– 0.029 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.019 VGS = 4.5V, ID = 29A
––– ––– 0.016 WVGS = 7.0V, ID = 29A
VGS(th) Gate Threshold Voltage 0.70 ––– ––– V VDS = VGS, ID = 250µA
gfs Forward Transconductance 28 ––– ––– S VDS = 16V, ID = 29A
––– ––– 25 µA VDS = 20V, VGS = 0V
––– ––– 250 VDS = 10V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 10V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -10V
QgTotal Gate Charge ––– ––– 43 ID = 29A
Qgs Gate-to-Source Charge ––– ––– 12 nC VDS = 16V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 13 VGS = 4.5V, See Fig. 6
td(on) Turn-On Delay Time ––– 9.8 ––– VDD = 10V
trRise Time ––– 100 ––– ns ID = 29A
td(off) Turn-Off Delay Time ––– 63 ––– RG = 9.5W, VGS = 4.5V
tfFall Time ––– 82 ––– RD = 0.3W,
Between lead,
6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 2000 ––– VGS = 0V
Coss Output Capacitance ––– 800 ––– pF VDS = 15V
Crss Reverse Transfer Capacitance ––– 290 ––– ƒ = 1.0MHz, See Fig. 5
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. I
SD £ 29A, di/dt £ 63A/µs, VDD £ V(BR)DSS,
TJ £ 150°C
Notes:
Starting TJ = 25°C, L = 0.64mH
RG = 25W, IAS = 29A. Pulse width £ 300µs; duty cycle £ 2%.
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
trr Reverse Recovery Time ––– 68 100 n s TJ = 25°C, IF = 29A
Qrr Reverse Recovery Charge ––– 130 190 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
48
190 A
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on) Static Drain-to-Source On-Resistance
IGSS
nH
LSInternal Source Inductance ––– 7.5 –––
LDInternal Drain Inductance ––– 4.5 –––
IDSS Drain-to-Source Leakage Current
IRL3202
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.75V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.0V
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
48A
1
10
100
1000
2 3 4 5
V = 15V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
1
10
100
1000
0.1 1 10 100
20µs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.50V
5.00V
4.00V
3.50V
3.00V
2.50V
2.00V
1.75V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.0V
BOTTOM BOTTOM
IRL3202
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1 10 100
0
500
1000
1500
2000
2500
3000
3500
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Ciss
Coss
Crss
1
10
100
1000
0.2 0.8 1.4 2.0 2.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
010 20 30 40 50 60 70
0
3
6
9
12
15
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D29A
V = 16V
DS
1
10
100
1000
1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T = 150 C
= 25 C
°°
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
100us
1ms
10ms
IRL3202
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectan
g
ular Pulse Duration
(
sec
)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150
0
10
20
30
40
50
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
Fig 10. Maximum Avalanche Energy
Vs. Drain Current
25 50 75 100 125 150
0
100
200
300
400
500
600
Starting T , Junction Temperature( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
13A
18A
29A
IRL3202
Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage
010 20 30 40 50 60
0.010
0.012
0.014
0.016
0.018
R , Drain-to-Source On Resistance
I , Drain Current (A)
D
DS (on)
VGS = 4.5V
VGS = 7.0V
( W )
0.010
0.015
0.020
0.025
0.0 2.0 4.0 6.0 8.0
A
GS
V , Gate-to-Source Volta
g
e
(
V
)
I = 48 A
D
RDS(on), Drain-to-Source On Resistance ( W )
IRL3202
LEAD ASSIGNMENTS
1 - GAT E
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185 )
4.20 (.165 )
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.11 3)
2.62 (.10 3)
15.24 (.60 0)
14.84 (.58 4)
14.09 (.55 5)
13.47 (.53 0)
3X 1.40 (.0 55)
1.15 (.0 45)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFOR MS TO JEDEC OUTLIN E TO-220AB.
2 CONT ROL L ING DIM ENSION : IN CH 4 H EAT SINK & L EAD MEASUREMENT S DO N O T INCLUDE BURRS.
Part Marking Information
TO-220AB
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
PART NUMBER
INTERNATIONAL
R E C T IF IE R
L O G O
EXAMPLE : THIS IS AN IRF1010
WITH ASSEMBLY
L OT CODE 9B1 M
ASSEMBL Y
LOT CODE
DATE CODE
(YYWW)
YY = YEAR
WW = WEEK
9246
IRF1010
9B 1M
A
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 11/97
