MCR100 SERIES
Silicon Controlled Rectifier
VRRM = 100-600V, IF(RMS) = 0.8A
Symbol
K
A
G
100 200 400 600
Maximum Storage Temperature Range
On-State RMS Current IT(RMS)
Peak Non-Repetitive Surge Current ITSM
MAXIMUM RATINGS
Parameter
Symbol
(Tj = 25 OC unless stated otherwise)
Repetitive Peak Off-State Voltage VRRM
MCR100-3
Maximum Junction Temperature Range Tj
T(STG)
0.8 at tc = 85OC
10
I 2T for Fusing 8.3ms I2T
Volt
Unit
Amp
Amp
OC
OC
A2/S
0.415
-40 to +150
-40 to +110
MCR100-4 MCR100-6 MCR100-8
Peak Reverse Gate Voltage VGRM Volt
5
Peak Gate Current IGM Amp
0.1
Forward Average Gate Power PG(AV) 0.1 Watt
Forward Peak Gate Power PGM 1.0 Watt
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter Unit
Symbol
Value
Typ
Min Max
Peak Forward On-State Voltage
Repetitive Peak Reverse Current
Volt
VTM
IRRM
Condition
1.7
ITM = 1.0 Amps
VR = VRRM. tJ=110OC100
Thermal Resistance (Junction to Case) 75
Rate of Rise of Off-State Voltage dV/dt
35
RTH (J-c) OC/W
µA
Gate Trigger Voltage VGT Volt
0.80
0.62
Gate Trigger Current IGT 200
40
Latch Current ILmA
10.0
0.60
Holding Current IHmA
5.0
0.50
20 V/µS
A/µS
Rate of Rise of Off-State Current dA/dt 50
Mechanical Outline
All Dimensions in Inches (Millimeters)
Third Angle Projection
0.205(5.20) max
0.175 (4.45) min
0.210(5.33) max
0.170 (4.32) min
0.500(12.70) min
0.165(4.19) max
0.125(3.18) min
0.021(50.533) max
0.016 (0.407) min
0.055(1.39) max
0.045 (1.15) min
0.055(1.39) max
0.045 (1.15) min
0.135(3.43) min
0.105(2.66) max
0.080(2.04) min
1 2 3
1 2 3
Cathode Gate Anode
Case:TO - 92
