DPH 30 IS 600 HI V RRM = I FAV = t rr = HiPerDynFRED High Performance Dynamic Fast Recovery Diode Extreme Low Loss and Soft Recovery Single Diode 1 Part number 600 V 30 A 35 ns 3 DPH 30 IS 600 HI Backside: isolated Features / Advantages: Applications: Package: Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Housing: ISOPLUS247 rIndustry standard outline rDCB isolated backside rIsolation Voltage 3000 V rEpoxy meets UL 94V-0 rRoHS compliant Conditions Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved max. Unit V VR = 600 V 1 A VR = 600 V TVJ = 150 C 0.2 mA IF = 30 A TVJ = 25 C 2.48 V IF = 60 A 3.02 V IF = 30 A 1.89 V IF = 60 A 2.45 V TC = 140C 30 A TVJ = 175C 1.10 V rectangular TVJ = 150 C d = 0.5 12.6 m 0.55 K/W 175 C TC = 25 C 285 W TVJ = 45C 450 A -55 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 600 for power loss calculation only R thJC t rr min. TVJ = 25 C TVJ = 25 C 30 A; VR = 400 V -di F /dt = 200 A/s VR = 400 V; f = 1 MHz TVJ = 25 C 3 A TVJ = 125C 8 A TVJ = 25 C 35 ns TVJ = 125C 65 ns TVJ = 25 C 30 pF Data according to IEC 60747and per diode unless otherwise specified 20100126a DPH 30 IS 600 HI Ratings Symbol Definition Conditions I RMS RMS current per terminal R thCH thermal resistance case to heatsink Tstg storage temperature min. typ. max. Unit 70 0.25 -55 Weight 150 6 FC mounting force with clip 20 VISOL isolation voltage d Spp/App creepage | striking distance on surface | through air terminal to terminal d Spb/Apb creepage | striking distance on surface | through air terminal to backside t = 1 second t = 1 minute A K/W C g 120 N 3600 V 3000 V 5.5 mm 5.5 mm Product Marking Part number Logo D P H 30 IS 600 HI IXYS Part No. Date Code UL listed = = = = = = = Diode HiPerFRED HiPerDyn Current Rating [A] Single Diode Reverse Voltage [V] ISOPLUS247 (2) abcd Order Code Ordering Standard Part Name DPH 30 IS 600 HI Similar Part DHG60I600HA DSEP60-06A DSEP60-06AT IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Marking on Product DPH30IS600HI Package TO-247AD (2) TO-247AD (2) TO-268AA (D3Pak) Delivering Mode Tube Base Qty Code Key 30 506235 Voltage Class 600 600 600 Data according to IEC 60747and per diode unless otherwise specified 20100126a DPH 30 IS 600 HI Outlines ISOPLUS247 IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved Data according to IEC 60747and per diode unless otherwise specified 20100126a DPH 30 IS 600 HI 0.8 80 20 70 60 50 IF [A] Qrr 40 12 IRM 0.4 [C] TVJ = 150C IF = 60 A 30 A 15 A 16 IF = 60 A 30 A 15 A 0.6 [A] 8 30 0.2 20 4 TVJ = 125C VR = 400 V 25C 10 0.0 0.0 0.8 1.6 2.4 VF [V] 3.2 0 0 4.0 TVJ = 125C VR = 400 V 200 400 600 0 200 Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt Fig. 1 Forward current IF versus forward voltage VF 100 1.6 1000 1.4 14 tfr 800 80 1.0 TVJ = 125C VR = 400 V IF = 30 A 600 0.6 0.4 Qrr 0.2 0.0 VFR 40 80 120 160 200 TVJ [C] 25 6 0 0 Fig. 4 Dynamic parameters Qrr, IRM versus T VJ 8 [V] 20 0 12 10 400 IF = 60 A 30 A 40 15 A IRM VFR tfr [ns] trr 60 [ns] Kf 0.8 600 Fig. 3 Typ. reverse recovery current IRM versus -diF /dt TVJ = 125C VR = 400 V 1.2 400 -diF /dt [A/s] -diF /dt [A/s] 200 400 -diF /dt [A/s] 600 Fig. 5 Typ. reverse recovery time trr versus -diF /dt 0 200 400 -diF /dt [A/s] 4 600 Fig. 6 Typ. forward recovery voltage VFR & forward recovery time tfr vs. diF /dt 0.6 TVJ = 125C VR = 400 V 0.5 20 IF = 15 A 0.4 30 A 60 A 15 Erec ZthJC 0.3 [J] 10 [K/W] 0.2 5 0.1 0 0.0 0 200 400 -diF /dt [A/s] 600 Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2010 IXYS all rights reserved 1 10 100 t [ms] 1000 10000 Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per diode unless otherwise specified 20100126a