2005. 1. 17 1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV214EA
Revision No : 1
TV TUNING.
FEATURES
·High Capacitance Ratio : C2V/C25V=6.3(Typ.)
·Low Series Resistance : rS=0.57Ω(Max.)
·Excellent C-V Characteristics, and Small Tracking Error.
·Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25℃)
ESC
DIM MILLIMETERS
A
B
C
D
E
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
CATHODE MARK
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13 0.05F
+
_
+
_
+
_
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
CHARACTERISTIC SYMBOL RATING UNIT
Reverse Voltage VR32 V
Junction Temperature Tj125 ℃
Storage Temperature Range Tstg -55～125 ℃
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Reverse Current IRVR=28V - - 10 nA
Capacitance C2V VR=2V, f=1MHz 14.15 - 15.75 pF
Capacitance C25V VR=25V, f=1MHz 1.96 - 2.25 pF
Capacitance Ratio C2V/C25V 6.3 - - -
Series Resistance rSVR=5V, f=470MHz - - 0.57 Ω
Type Name
Marking
ZU
C(Max.)-C(Min.)≦0.02
C(Min.)
(VR=2~25V)
Note : Available in matched group for capacitance to 2.0%.
2005. 1. 17 2/2
KDV214EA
Revision No : 1
10
REVERSE CURRENT I (A)
R
T
0
REVERSE VOLTAGE V (V)
R
I - V
RR
10 3020 40
TOTAL CAPACITANCE C (pF)
0
101
REVERSE VOLTAGE V (V)
R
TR
C - V
50
5
10
15
20
f=1MHz
-1.5
-1.0
101
REVERSE VOLTAGE V (V)
R
TRR
∆(LOG C ) / ∆(LOG V ) - V
TR
∆(LOG C ) / ∆(LOG V )
50
-0.5
0
s
SERIES RESISTANCE r (Ω)
0
101
REVERSE VOLTAGE V (V)
R
sR
r - V
50
0.5
f=470MHz
0.6
0.3
0.4
0.1
0.2
-12
10
-11
10
-13
10
-10
