1
TGA2904-FL
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Key Features and Performance
•Frequency Range: 13-17 GHz
•Optimized for VSAT band (13.75-14.5 GHz)
•33 dB Nominal Gain
•Typical > 33.5 dBm Psat in VSAT band @ 7V
•Bias 5-8 V @ 680 mA (Quiescent)
•0.5-μm pHEMT 3MI Technology
•10 lead flange packaged
•Package dimensions: 0.70x 0.33 x 0.1 in3
Preliminary Measured Performance
Bias Conditions: Vd = 7 V, Idq = 680 mA
Primary Applications
•VSAT
•Point to Point
25
26
27
28
29
30
31
32
33
34
35
12 13 14 15 16 17 18
Frequency (GHz)
Psat (dBm)
Vd=8V
7V
6V
5V
Product Description
The TriQuint TGA2904-FL is a compact 2
Watt High Power Amplifier Packaged
MMIC for Ku-band applications. The
packaged part provides 33 dB nominal
gain.
The part is ideally suited for low cost
emerging markets such as base station
transmitters for satellite ground terminals
and point to point radio.
The TGA2904-FL is 100% RF tested to
ensure performance compliance.
Lead-Free & RoHS compliant.
Evaluation boards are available.
Ku Band 2 Watt Packaged Amplifier
Datasheet subject to change without notice
2
TGA2904-FL
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
TABLE I
MAXIMUM RATINGS 1/
Symbol Parameter Value Notes
Vd
Drain Supply Voltage 8 V 2/
Vg
Gate Supply Voltage Range -5V to 0V
Idq
Drain Supply Current (Quiescent) 1.3 A 2/
| Ig |
Gate Current 18 mA
P
IN
Input Continuous Wave Power 21 dBm 2/
P
D
Power Dissipation 8.8 W 2/ 3/
T
CH
Operating Channel Temperature 200 °C 4/ 5/
Mounting Temperature
(30 Seconds)
260 °C
T
STG
Storage Temperature -65 to 150 °C
1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed P
D
.
3/ When operated at this bias condition with a base plate temperature of 85 °C, the median life is
7.5E5 hrs.
4/ These ratings apply to each individual FET.
5/ Junction operating temperature will directly affect the device median time to failure (Tm). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
TABLE II
RF CHARACTERIZATION TABLE
(TA = 25°C, Nominal)
(Vd = 7 V, Idq = 680 mA)
SYMBOL PARAMETER TEST CONDITION TYPICAL UNITS
Gain Small Signal Gain F = 13 –17 GHz 33 dB
IRL Input Return Loss F = 13 –17 GHz 10 dB
ORL Output Return Loss F = 13 –17 GHz 10 dB
PWR Output Power @ Pin = +5 dBm F = 13 –15 GHz 34 dBm
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TGA2904-FL
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
TABLE III
THERMAL INFORMATION
PARAMETER TEST CONDITIONS
TCH
(°C)
θ
JC
(°C/W)
Tm
(HRS)
θJC Thermal Resistance
(channel to Case)
Vd = 7 V
Id = 680 mA
Pdiss = 4.76 W
Small Signal
147
13.0
1.3E+6
θJC Thermal Resistance
(channel to Case)
Vd = 7 V
Id = 1.25 A @ Psat
Pdiss = 6.3 W
Pout = 2.5 W (RF)
166
13.0
2.8E+5
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at
85 °C baseplate temperature.
.
Median Lifetime (Tm) vs. Channel Temperature
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TGA2904-FL
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Typical Fixtured Performance
Bias Conditions: Vd = 7 V, Idq = 680 mA
25
26
27
28
29
30
31
32
33
34
35
12 13 14 15 16 17 18
Frequency (GHz)
Psat (dBm)
Vd = 8V
7V
6V
5V
5
TGA2904-FL
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Typical Fixtured Performance
Bias Conditions: Vd = 7 V, Idq = 680 mA, F = 14 GHz
17
19
21
23
25
27
29
31
33
35
-16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 10
Input power (dBm)
Output Power (dBm)
600
800
1000
1200
1400
1600
1800
2000
2200
2400
Id (mA)
Pout
Id
6
TGA2904-FL
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Mechanical Drawing
Units: inches
Tolerance (unless otherwise noted): +/- 0.005
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TGA2904-FL
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Package Assembly Diagram
Vd Vd 1 uF
0.01 uF
1 uF
0.01 uF
0.01 uF
1 uF
10 ohm
10 ohm
0.01 uF
1 uF
Vg Vg
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TGA2904-FL
May 2009 © Rev -
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
Assembly of a TGA2904-FL Surface Mount Package onto a Motherboard
Manual Assembly for Prototypes
1. Clean the motherboard or module. Rinse with alcohol and DI water. Allow the circuit to fully dry.
2. To improve the thermal and RF performance, a heat sink attached to the bottom of the package is
recommended. Apply indium alloy, SN63 solder or tin/lead solder to the bottom of TGA2904-FL.
3. Apply tin/lead solder to each pin of TGA2904-FL.
4 Clean the assembly with alcohol.
Ordering Information
Part Package Style
TGA2904-FL Flange Lead
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
