APPLICATIONS
Carrier oscillators in RF Modulators for VCR,
BS tuner, CATV, etc.
ELECTRICAL CHARACTERISTICS
(Ta=25
oC unless otherwise noted)
PACKAGE DIMENSION
TYPICAL FREQUENCY TRANSMISSION CHARACTERISTICS
FUJITSU MEDIA DEVICES
SAW RESONATOR
F82SME
No. F82SME 2002-04-01
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
Fujitsu Media Devices for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of Fujitsu Media Devices or others.
The information contained herein may be changed without prior notice. It is therefore advisable to contact Fujitsu Media Devices before proceeding
with the design of equipment incorporating this product.
SYSTEM
CHANNEL NTSC USA
3 CH (61.25 MHz)
4 CH (67.25 MHz)
f
r1
f
r2
A
r1
A
r2
C
TE1
C
TE2
Item Type F82SME Unit
-18
61.22 ± 0.06
67.22 ± 0.06
2.7 Max.
2.7 Max.
3.7 ± 1.0
3.7 ± 1.0
MHz
dB
pF
ppm/˚C
Note (1) Measured in a 50-ohm system
(2) Measured at frequency of 1 MHz
Resonant frequency (1)
Resonant loss (1)
Parallel capacitance (2)
Temp. coeff. of frequency
(-20˚C to 70˚C)
12.5 MAX
7.7 MAX
3.7 MAX8.0 ± 0.8
Pin No.
#1. Low ch (3 ch)
#2. High ch (4 ch)
#3. Ground
#4. Common
Unit mm
2.5 ± 0.5 pitch
ø 0.5 ± 0.05
2.2 ± 0.5
#4 #3 #2 #1
100kHz/div 100kHz/div
fr1 fr2
10dB/div
90°/div
Low ch (3 CH) High ch (4 CH)
FUJITSU MEDIA DEVICES LTD.
MEASUREMENT CIRCUIT
FEATURES
(1) Adjustment free
(2) Two channels in one Single Inline Package
(3) Direct fundamental oscillation
(4) No spurious response
(5) Small size and light weight
(6) High reproducibility
(7) High reliability
ABSOLUTE MAXIMUM RATINGS
Operating Temperature ............ -10 to 60
o
C
Storage Temperature............... -55 to 85
o
C
DC Voltage.............................................. 3V
Driving power................................... 0.2mW
PIN CONNECTIONS
EQUIVALENT CIRCUIT
EQUIVALENT CIRCUIT CONSTANT VALUES
ch. parameter
Low ch.
(US 3CH)
R1
(Ω)L1
(µH) C
TE
(pF)
C1
(pF)
High ch.
(US 4CH)
21
18
690
520
0.010
0.011
3.7
3.7
50Ω50Ω
Bottom View
C
TE
L
1
C
1
R
1
