V
RRM
= 400 V - 1800 V
I
F
= 320 A
Features
• High Surge Capability DO-9 Package
• Equivalent to SKR240 Series
• Not ESD Sensitive
GKR
Parameter Symbol GKR240/04 GKR240/08 GKR240/16GKR240/1
Unit
Re
etitive
eak reverse volta
eV
RRM
400 800 1600 1800 V
1400
GKR240/04 thru GKR240/18
GKR240/14
1200
GKR240/12
Maximum ratings, at T
j
= 25 °C, unless otherwise specified (GKN has leads reversed)
Silicon Standard
Recover
Diode
• Types from 400 V to 1800 V V
RRM
Conditions
2
1
2
1
DC blocking voltage V
DC
400 800 1600 1800 V
Continuous forward current I
F
320 320 320 320 A
Operating temperature T
j
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Storage temperature T
stg
-55 to 150 -55 to 150 -55 to 150 -55 to 150 °C
Parameter Symbo
GKR240/04 GKR240/08 GKR240/16GKR240/1
Unit
Diode forward voltage 1.4 1.4 1.4 1.4
Thermal characteristics
Thermal resistance, junction -
case R
thJC
0.20 0.20 0.20 0.20 K/W
60 60 mA60
0.20 0.20
Reverse current I
R
V
R
= V
RRM
, T
j
= 25 °C 60
14001200
-55 to 150 -55 to 150
60 60
GKR240/12
1.4
I
F
= 60 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
6000 6000
-55 to 150
320 320
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
6000
V
F
6000 6000
-55 to 150
A6000
1.4
GKR240/14
T
C
= 25 °C, t
p
= 10 m
Feb 2016 Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
1