January 2009
Sensors
Data Sheet
V 2.0
TLE4906K / TLE4906L
High Precision Hall Effect Switch
Edition 2009-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
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TLE4906K / TLE4906L High Precision Hall Effect Switch
Revision History: 2009-01, V 2.0
Previous Version: 1.1
Page Subjects (major changes since last revision)
Package type “H” changed to “K”
General layout changed
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Data Sheet 1 V 2.0, 2009-01
TLE4906K
TLE4906L
TLE4906K
TLE4906L
Table of Contents
Data Sheet 2 V 2.0, 2009-01
1 Product Description 3
1.1 Overview 3
1.2 Features 3
1.3 Target Applications 3
2 Functional Description 4
2.1 General 4
2.2 Pin Configuration (top view) 4
2.3 Pin Description 4
2.4 Block Diagram 5
2.5 Functional Block Description 5
3 Specification 7
3.1 Absolute Maximum Ratings 7
3.2 Operating Range 8
3.3 Electrical and Magnetic Characteristics 9
4 Package Information 11
4.1 Package Outline 11
4.2 Distance between Chip and Package 13
4.3 Package Marking 13
Table of Contents
Product Name Product Type Ordering Code Package
Hall Effect Switch TLE4906K SP000475028 SC59
Hall Effect Switch TLE4906L SP000012949 PG-SSO-3-2
High Precision Hall-Effect Switch
TLE4906K
TLE4906L
Data Sheet 3 V 2.0, 2009-01
1Product Description
1.1 Overview
The TLE4906 is a high precision Hall effect switch with
highly accurate switching thresholds for operating
temperatures up to 150°C.
1.2 Features
•2.7V to 24V supply voltage
•Operation from unregulated power supply
•High sensitivity and high stability of the magnetic switching points
•High resistance to mechanical stress by Active Error Compensation
•Reverse battery protection (-18V)
•Superior temperature stability
•Peak temperatures up to 195°C without damage
•Low jitter (typ. 1µs)
•High ESD performance (± 6kV HBM)
•Digital output signal
•SMD package SC59 (SOT23 compatible) - (TLE4906K))
•Leaded package PG-SSO-3-2 - (TLE4906L)
1.3 Target Applications
Target applications for TLE4906 are all automotive applications which require a high precision Hall switch for
position sensing with a operating temperature range from -40°C to +150°C.
Data Sheet 4 V 2.0, 2009-01
TLE4906K
TLE4906L
Functional Description
2 Functional Description
2.1 General
The TLE4906K and the TLE4906L are integrated circuit Hall-effect sensors designed specifically for highly
accurate applications.
Precise magnetic switching points and high temperature stability are achieved by active compensation circuits and
chopper techniques on chip.
2.2 Pin Configuration (top view)
Center of
Sensitive Area
1
± 0 .15
1.5
± 0.15
0.8
2
3
321
PG-SSO-3-2SC59
± 0. 1
1.35
± 0.1
2.08
Figure 1 Pin Configuration and Center of Sensitive Area
2.3 Pin Description
Table 1 Pin Description SC59
Pin No. Symbol Function Comment
1 VSSupply voltage
2 Q Output
3GND Ground
Table 2 Pin Description PG-SSO-3-2
Pin No. Symbol Function Comment
1 VSSupply voltage
2GND Ground
3 Q Output
Data Sheet 5 V 2.0, 2009-01
TLE4906K
TLE4906L
Functional Description
2.4 Block Diagram
Ref
Chopped
Hall Probe
V
S
Q
GND
Amplifier Low
Pass
Filter
Comparator
with
Hysteresis
Voltage Regulator
reverse polarity protected
Oscillator
and
Sequencer
Bias and
Compensation
Circuits
Figure 2 Functional Block Diagram
2.5 Functional Block Description
The chopped Hall IC Switch comprises a Hall probe, bias generator, compensation circuits, oscillator and output
transistor.
The bias generator provides currents for the Hall probe and the active circuits. Compensation circuits stabilize the
temperature behavior and reduce technology variations.
The Active Error Compensation rejects offsets in signal stages and the influence of mechanical stress to the Hall
probe caused by molding and soldering processes and other thermal stresses in the package.
This chopper technique together with the threshold generator and the comparator ensure high accurate magnetic
switching points.
.
Applied
Magnetic
Field
90%
10%
V
Q
t
f
t
d
t
r
t
d
B
OP
B
RP
Data Sheet 6 V 2.0, 2009-01
TLE4906K
TLE4906L
Functional Description
Figure 3Timing Diagram
VQ
Bop
Brp
0
B
Figure 4 Output Signal
Data Sheet 7 V 2.0, 2009-01
TLE4906K
TLE4906L
Specification
3 Specification
3.1 Absolute Maximum Ratings
Table 3 Absolute Maximum Rating Parameters
Tj = -40°C to 150°C
Parameter Symbol Limit Values Unit Note / Test Condition
Min. Max.
Supply voltage VS-18
-18
-18
18
24
26
V
for 1h, RS ≥ 200Ω
for 5min, RS ≥ 200Ω
Supply current through
protection device
IS-50 50 mA
Output voltage VQ-0.7
-0.7
18
26
V
for 5min @ 1.2kΩ pull up
Continuous output current IQ-50 50 mA
Junction temperature Tj–
–
–
–
155
165
175
195
°C for 2000h (not additive)
for 1000h (not additive)
for 168h (not additive)
for 3 x 1h (additive)
Storage temperature TS-40 150 °C
Magnetic flux density B – unlimited mT
Note: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are
absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.
Table 4 ESD Protection1)
1) Human Body Model (HBM) tests according to: EOS/ESD Association Standard S5.1-1993 and Mil. Std. 883D method
3015.7
Parameter Symbol Limit Values Unit Note / Test Condition
Min. Max.
ESD Voltage VESD ±6 kV HBM, R = 1.5kΩ,
C = 100pF
TA = 25°C
Data Sheet 8 V 2.0, 2009-01
TLE4906K
TLE4906L
Specification
3.2 Operating Range
Table 5 Operating Conditions Parameters
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply voltage VS2.7 18 V
Output voltage VQ-0.7 18 V
Junction temperature Tj-40 150 °C
Output current IQ020 mA
The following operating conditions must not be exceeded in order to ensure correct operation of the TLE4906K /
TLE4906L.
All parameters specified in the following sections refer to these operating conditions unless otherwise mentioned.
Data Sheet 9 V 2.0, 2009-01
TLE4906K
TLE4906L
Specification
3.3 Electrical and Magnetic Characteristics
Table 6 General Electrical Characteristics1)
1) over operating range, unless otherwise specified. Typical values correspond to VS = 12V and TA = 25°C
Parameter Symbol Values Unit Note / Test Condition
Min. Typ. Max.
Supply current IS2 4 6 mA VS = 2.7V ... 18V
Reverse current ISR 00.2 1mA VS = -18V
Output saturation voltage VQSAT -0.3 0.6 V IQ = 20mA
Output leakage current IQLEAK -0.05 10 µA for VQ = 18V
Output fall time tf-0.02 1µs RL = 1.2kΩ; CL = 50pF
see Figure 3
Output rise time tr-0.4 1µs
Chopper frequency fOSC -320 -kHz
Switching frequency fSW 0 -
2) To operate the sensor at the max. switching frequency, the value of the magnetic signal amplitude must be 1.4 times higher
than for static fields. This is due to the -3dB corner frequency of the low pass filter in the signal path.
152) kHz
Delay time
3) Systematic delay between magnetic threshold reached and output switching.
3) td-13 -µs
Output jitter
4) Jitter is the unpredictable deviation of the output switching delay.
4) tQJ - 1 - µsRMS typical value for square wave
signal with 1kHz
Power-on time
5) Time from applying VS ≥ 2.7V to the sensor until the output state is valid.
5) tPON -13 -µs VS ≥ 2.7V
Thermal resistance
6) Thermal resistance from junction to ambient.
6) RthJA -100 -K/W SC59
- - 190 PG-SSO-3-2
Product characteristics involve the spread of values guaranteed within the specified voltage and ambient
temperature range. Typical characteristics are the median of the production.
Calculation of the ambient temperature (SC59 example)
e.g. for VS = 12.0V, IStyp = 4mA, VQSATtyp = 0.3V and IQ = 20mA
Power dissipation PDIS = 54.0mW
In TA = Tj - (RthJA x PDIS) = 175°C - (100K/W x 0.054W)
Resulting max. ambient temperature: TA = 169.6°C
Table 7 Magnetic Characteristics1)
1) over operating range, unless otherwise specified. Typical values correspond to VS = 12V and TA = 25°C.
Parameter Symbol Tj[°C] Values Unit Note / Test Condition
Min. Typ. Max.
Operating point BOP -40
25
150
6.7
6.5
6.2
10.3
10.0
9.5
13.9
13.5
12.9
mT
Release point BRP -40
25
150
5.2
5.0
4.7
8.7
8.5
8.1
12.3
12.0
11.4
mT
Hysteresis BHYS -40
25
150
-
0.7
-
-
1.5
-
-
3.0
-
mT
Temperature compensation
of magnetic thresholds
TC--350 -ppm/°C
Repeatability of magnetic
thresholds
2) BREP is equivalent to the noise constant
2)
BREP -20 -µTRMS typ. value for
∆B/∆t > 12mT/ms
Data Sheet 10 V 2.0, 2009-01
TLE4906K
TLE4906L
Specification
Note: Typical characteristics specify mean values expected over the production spread
Branded Side
N
S
N
SBranded Side
Field Direction Definition
Positive magnetic fields are defined with the south pole of the magnet to the branded side of package.
Figure 5 Definition of magnetic field direction (left: SC59, right: PG-SSO-3-2)
Data Sheet 11 V 2.0, 2009-01
TLE4906K
TLE4906L
Package Information
4 Package Information
4.1 Package Outline
3x0.4 +0.05
-0.1 M
0.1
0.95
0.95
(0.55)
3±0.1
+0.2
2.8
-0.1
0.15 MAX.
1.1±0.1
0.2+0.1
+0.1
-0.05
0.15
0˚...8˚ MAX.
GPS09473
0.45
±0.15
+0.15
-0.3
1.6
0.1
M
0.1
3
21
Figure 6 SC59 Package Outline (all dimensions in mm)
Reflow Solderin
g
Wave Soldering
0.8
0.8
1.2
0.9 1.3 0.9
0.8
0.8
1.2
1.6 1.4 min
1.4 min
The following picture shows a recommendation for the PCB layout.
Figure 7 SC59 Footprint (SOT23 compatible, all dimensions in mm)
To ta l to le r a n c e a t 1 0 p itc h e s ± 1
1) No solder function area
±0.3
±0.4
6.35
12.7
12.7
±1
±0.5
-0.5
+0.75
4
±0.3
9
GP O05358
-0.15
±0.1
Tape
Adhes iv
e
Tape
0.25
0.39
±0.5
A
18
6
23.8
±0.5
38 MAX.
-1
1
132
1.27
±0.25
1.27
±0.25
0.6 MAX.
0.4
±0.05
1)
1 MAX.
0.15 MAX.
1.9 MAX.
4.06
±0.08
4.16
±0.05
±0.08
3.29
3
±0.06
0.2
(0.25)
x 45°0.8
±0.1
7°
x 45°
±0.1
0.35
0.2
+0.1
7°
(0.79)
A
2
1.52
±0.05
Data Sheet 12 V 2.0, 2009-01
TLE4906K
TLE4906L
Package Information
Figure 8 PG-SSO-3-2 Package Outline (All dimensions in mm)
Data Sheet 13 V 2.0, 2009-01
TLE4906K
TLE4906L
Package Information
4.2 Distance between Chip and Package
PG-SSO-3-2 : 0.57
d : Distance chip to upper side of IC
mm
±0.08
AEA02510-1
Hall-Probe
Branded Side
d
Figure 9 Distance between chip and package PG-SSO-3-2
AEA03244
Branded Side
d: Distance chip to upper side of IC
SC59:
d
0.56 ±0.1 mm
Figure 10 Distance between chip and package SC59
4.3 Package Marking
AEA03641
06
Year (y) = 0...9
Month (m) = 1...9,
O - October
N - November
D - December
y m
Figure 11 Marking of TLE4906K
Year (y) = 0...9
Calendar Week (ww) = 01...52
yww
06L
S
Data Sheet 14 V 2.0, 2009-01
TLE4906K
TLE4906L
Package Information
Figure 12 Marking of TLE4906L
Published by Infineon Technologies AG
www.infineon.com