DTC015T series Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) l Outline Parameter VCEO Value IC 100mA R1 100k VMT3 EMT3F 50V DTC015TM (SC-105AA) DTC015TEB (SC-89) UMT3F l Features 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 4) Only the on/off conditions need to be set for operation, making the circuit design easy. 5) Complementary PNP Types: DTA015T series 6) Lead Free/RoHS Compliant. DTC015TUB (SC-85) l Inner circuit l Application Switching circuit, Inverter circuit, Interface circuit, B: BASE C: COLLECTOR E: EMITTER Driver circuit l Packaging specifications Package Package size Taping code DTC015TM VMT3 1212 T2L 180 DTC015TEB DTC015TUB EMT3F UMT3F 1616 2021 TL TL 180 180 Part No. www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1/6 Basic ordering unit.(pcs) Marking 8 8000 61 8 8 3000 3000 61 61 Reel size Tape width (mm) (mm) 20121023 - Rev.001 DTC015T series Datasheet l Absolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 100 mA Collector current DTC015TM Power dissipation 150 PD*1 DTC015TEB 150 DTC015TUB mW 200 Junction temperature Range of storage temperature Tj 150 Tstg -55 to +150 l Electrical characteristics (Ta = 25C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BVCBO IC = 50A 50 - - V Collector-emitter breakdown voltage BVCEO IC = 1mA 50 - - V Emitter-base breakdown voltage BVEBO IE = 50A 5 - - V Collector cut-off current ICBO VCB = 50V - - 0.5 A Emitter cut-off current IEBO VEB = 4V - - 0.5 A VCE(sat) IC / IB = 5mA / 0.25mA - 0.03 0.15 V DC current gain hFE VCE = 10V, IC = 5mA 100 - 600 - Input resistance R1 70 100 130 k Transition frequency f T*2 - 250 - MHz Collector-emitter saturation voltage VCE = 10V, IE = -5mA, f = 100MHz *1 Each terminal mounted on a reference footprint *2 Characteristics of built-in transistor www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 2/6 20121023 - Rev.001 DTC015T series Datasheet l Electrical characteristic curves (Ta =25C) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC Current gain vs. Collector Current Fig.4 Collector-emitter saturation voltage vs. Collector Current www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 3/6 20121023 - Rev.001 DTC015T series Datasheet l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 4/6 20121023 - Rev.001 DTC015T series Datasheet l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 5/6 20121023 - Rev.001 DTC015T series Datasheet l Dimensions www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 6/6 20121023 - Rev.001 Datasheet DTC015TEB - Web Page Buy Distribution Inventory Part Number Package Unit Quantity Minimum Package Quantity Packing Type Constitution Materials List RoHS DTC015TEB EMT3F 3000 3000 Taping inquiry Yes