934056117135 - NXP - Datasheet.Live

PHT4NQ10T

TrenchMOS™ standard level FET

Rev. 02 — 2 May 2002 Product data

M3D087

1. Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

Product availability:

PHT4NQ10T in SOT223.

2. Features

■TrenchMOS™ technology

■Very fast switching

■Surface mount package.

3. Applications

■Primary side switch in DC to DC converters

■High speed line driver

■Fast general purpose switch.

4. Pinning information

Table 1: Pinning - SOT223, simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g)

SOT223

2 drain (d)

3 source (g)

4 drain (d)

123

MSB002 - 1

Top view

MBB076

Philips Semiconductors PHT4NQ10T
TrenchMOS™ standard level FET
Product data Rev. 02 — 2 May 2002 2 of 12
9397 750 09581 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
VDS drain-source voltage (DC) 25 °C≤Tj≤150 °C - 100 V
IDdrain current (DC) Tsp =25°C; VGS =10V - 3.5 A
Ptot total power dissipation Tsp =25°C - 6.9 W
Tjjunction temperature - 150 °C
RDSon drain-source on-state resistance VGS = 10 V; ID= 1.75 A
Tj=25°C 200 250 mΩ
Tj= 150 °C - 575 mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 °C≤Tj≤150 °C - 100 V
VDGR drain-gate voltage (DC) 25 °C≤Tj≤150 °C; RGS =20kΩ- 100 V
VGS gate-source voltage (DC) - ±20 V
IDdrain current (DC) Tsp =25°C; VGS =10V;
Figure 2 and 3- 3.5 A
Tsp = 100 °C; VGS =10V;Figure 2 - 2.2 A
IDM peak drain current Tsp =25°C; pulsed; tp≤10 µs;
Figure 3 -14A
Ptot total power dissipation Tsp =25°C; Figure 1 - 6.9 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −65 +150 °C
Source-drain diode
ISsource (diode forward) current (DC) Tsp =25°C - 3.5 A
ISM peak source (diode forward) current Tsp =25°C; pulsed; tp≤10 µs - 14 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy unclamped inductive load; ID= 3.5 A;
tp= 0.2 ms; VDD ≤15 V; RGS =50Ω;
VGS = 10 V; starting Tj=25°C;
Figure 4
-45mJ
IDS(AL)SM peak non-repetitive drain-source
avalanche current - 3.5 A

Philips Semiconductors PHT4NQ10T

TrenchMOS™ standard level FET

Product data Rev. 02 — 2 May 2002 3 of 12

VGS ≥10 V

Fig 1. Normalized total power dissipation as a

function of solder point temperature. Fig 2. Normalized continuous drain current as a

function of solder point temperature.

Tsp =25°C; IDM is single pulse. Unclamped inductive load; VDD ≤15 V; RGS =50Ω;

VGS = 10 V; starting Tj=25°C and 125 °C.

Fig 3. Safe operating area; continuous and peak drain

currents as a function of drain-source voltage. Fig 4. Non-repetitive avalanche ruggedness current

as a function of pulse duration.

03aa17

Pder

120

050 100 150 200

Tsp (°C)

(%)

03aa25

120

050 100 150 200

sp (°C)

der

(%)

Pder Ptot

Ptot 25 C

()

---------------------- 100%×=

Ider ID

ID25C

()

-------------------100%×=

03aa88

10-2

10-1

102

110 102103

VDS (V)

(A)

100 ms

10 ms

1 ms

tp = 10 µs

100 µs

Limit RDSon = VDS/ID

03aa97

10-1

10-2 10-1 110

tp (ms)

IAS

(A)

Tj prior to avalanche = 125 °C

25 °C

Philips Semiconductors PHT4NQ10T

TrenchMOS™ standard level FET

Product data Rev. 02 — 2 May 2002 4 of 12

7. Thermal characteristics

7.1 Transient thermal impedance

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance from junction to solder

point mounted on a metal clad substrate;

Figure 5 - - 18 K/W

Rth(j-a) thermal resistance from junction to ambient mounted on a printed circuit board;

minimum footprint - 150 - K/W

Mounted on a metal clad substrate.

Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration.

03aa87

10-2

10-1

102

10-5 10-4 10-3 10-2 10-1 110

tp (s)

Zth(j-sp)

(K/W)

single pulse

δ = 0.5

0.2

0.1

0.05

0.02

Philips Semiconductors PHT4NQ10T
TrenchMOS™ standard level FET
Product data Rev. 02 — 2 May 2002 5 of 12
9397 750 09581 © Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise speciﬁed
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V(BR)DSS drain-source breakdown
voltage ID= 250 µA; VGS =0V
Tj=25°C 100 130 - V
Tj=−55 °C89--V
VGS(th) gate-source threshold voltage ID= 1 mA; VDS =V
GS
Tj=25°C; Figure 10 234V
Tj= 150 °C; Figure 10 1.2 - - V
Tj=−55 °C; Figure 10 --6V
IDSS drain-source leakage current VDS = 100 V; VGS =0V
Tj=25°C-125µA
Tj= 150 °C - 4 250 µA
VDS = 60 V; VGS =0V
Tj=85°C--1µA
IGSS gate-source leakage current VGS =±20 V; VDS = 0 V - 10 100 nA
RDSon drain-source on-state
resistance VGS =10V; I
D= 1.75 A
Tj=25°C; Figure 8 and 9- 200 250 mΩ
Tj= 150 °C; Figure 9 - - 575 mΩ
Dynamic characteristics
gfs forward transconductance VDS =5V; I
D= 3.5 A;
Figure 12 - 4.2 S
Qg(tot) total gate charge ID= 3.5 A; VDS =80V;
VGS =10V;Figure 15 - 7.4 - nC
Qgs gate-source charge - 1.5 - nC
Qgd gate-drain (Miller) charge - 3.3 - nC
Ciss input capacitance VGS =0V; V
DS =25V;
f = 1 MHz; Figure 13 - 300 - pF
Coss output capacitance - 44 - pF
Crss reverse transfer capacitance - 21 - pF
td(on) turn-on delay time VDD = 50 V; RD=15Ω;
VGS =10V; R
G=6Ω-8-ns
trrise time - 13 - ns
td(off) turn-off delay time - 20 - ns
tffall time - 11 - ns
Source-drain diode
VSD source-drain (diode forward)
voltage IS= 3.5 A; VGS =0V;
Figure 14 - 0.87 1.5 V
trr reverse recovery time IS= 3.5 A;
dIS/dt = −100 A/µs;
VGS =0V; V
DS =30V
-50-ns
Qrrecovered charge - 100 - nC

Philips Semiconductors PHT4NQ10T

TrenchMOS™ standard level FET

Product data Rev. 02 — 2 May 2002 6 of 12

Tj=25°CT

j=25°C and 150 °C; VDS >ID×RDSon

Fig 6. Output characteristics: drain current as a

function of drain-source voltage; typical values. Fig 7. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Tj=25°C

Fig 8. Drain-source on-state resistance as a function

of drain current; typical values. Fig 9. Normalized drain-source on-state resistance

factor as a function of junction temperature.

03aa90

0 0.4 0.8 1.2 1.6 2

VDS (V)

(A) Tj = 25 °CVGS = 10 V

6 V

5.5 V

5 V

4.8 V

4.6 V

4.2 V

03aa92

02468

VGS (V)

(A) VDS > ID X RDSon

Tj = 25 °C

150 °C

03aa91

0.2

0.4

0.6

0.8

0246810

ID (A)

RDSon

(Ω)

Tj = 25 °C

5.5 V

VGS = 10 V

5 V

4.8 V

4.4 V

03aa29

0.5

1.5

2.5

-60 060

120 180

(

aRDSon

RDSon 25 C

()

----------------------------

Philips Semiconductors PHT4NQ10T

TrenchMOS™ standard level FET

Product data Rev. 02 — 2 May 2002 7 of 12

ID= 1 mA; VDS =V

GS Tj=25°C; VDS =5V

Fig 10. Gate-source threshold voltage as a function of

junction temperature. Fig 11. Sub-threshold drain current as a function of

gate-source voltage.

Tj=25°C and 150 °C; VDS >ID×RDSon VGS = 0 V; f = 1 MHz

Fig 12. Forward transconductance as a function of

drain current; typical values. Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values.

03aa32

-60 0 60 120 180

(oC)

GS(th)

(V) max

min

typ

03aa35

-6

-5

-4

-3

-2

-1

0246

(V)

(A)

maxtypmin

03aa93

0246810

ID (A)

gfs

(S) Tj = 25 °C

150 °C

VDS > ID X RDSon

03aa95

102

103

10-1 11010

VDS (V)

Ciss

Coss

Crss

(pF)

Philips Semiconductors PHT4NQ10T

TrenchMOS™ standard level FET

Product data Rev. 02 — 2 May 2002 8 of 12

Tj=25°C and 150 °C; VGS =0V I

D= 3.5 A; VDS =80V

Fig 14. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values.

Fig 15. Gate-source voltage as a function of gate

charge; typical values.

03aa94

00.2 0.4 0.6 0.8 11.2

VSD (V)

(A)

Tj = 150 °C

25 °C

03aa96

04812

QG (nC)

VGS

(V)

ID = 3.5 A

Tj = 25 °C

VDS = 20 V

VDS = 80 V

Philips Semiconductors PHT4NQ10T

TrenchMOS™ standard level FET

Product data Rev. 02 — 2 May 2002 9 of 12

9. Package outline

Fig 16. SOT223.

UNIT A1bpcDEe1HELpQywv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.10

0.01

1.8

1.5 0.80

0.60

3.1

2.9 0.32

0.22 6.7

6.3 3.7

3.3 2.3

4.6 7.3

6.7 1.1

0.7 0.95

0.85 0.1 0.10.2

DIMENSIONS (mm are the original dimensions)

SOT223 SC-73 97-02-28

99-09-13

detail X

vMA

0 2 4 mm

scale

132

Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223

Philips Semiconductors PHT4NQ10T

TrenchMOS™ standard level FET

Product data Rev. 02 — 2 May 2002 10 of 12

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

02 20020502 - Product data (9397 750 09581)

Modiﬁcations:

•Additional IDSS data added.

01 20000731 - Product speciﬁcation; initial version.

9397 750 09581

Philips Semiconductors PHT4NQ10T

TrenchMOS™ standard level FET

Product data Rev. 02 — 2 May 2002 11 of 12

9397 750 09581

Philips Semiconductors PHT4NQ10T

TrenchMOS™ standard level FET

Product data Rev. 02 — 2 May 2002 11 of 12

Contact information

For additional information, please visit http://www.semiconductors.philips.com.

For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.Fax: +31 40 27 24825

11. Data sheet status

[1] Please consult the most recently issued data sheet before initiating or completing a design.

[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For

detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with

the Absolute Maximum Rating System (IEC 60134). Stress above one or

more of the limiting values may cause permanent damage to the device.

These are stress ratings only and operation of the device at these or at any

other conditions above those given in the Characteristics sections of the

speciﬁcation is not implied. Exposure to limiting values for extended periods

may affect device reliability.

Application information — Applications that are described herein for any

of these products are for illustrative purposes only. Philips Semiconductors

make no representation or warranty that such applications will be suitable for

the speciﬁed use without further testing or modiﬁcation.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so

at their own risk and agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to

make changes, without notice, in the products, including circuits, standard

cells, and/or software, described or contained herein in order to improve

design and/or performance. Philips Semiconductors assumes no

responsibility or liability for the use of any of these products, conveys no

licence or title under any patent, copyright, or mask work right to these

products, and makes no representations or warranties that these products are

free from patent, copyright, or mask work right infringement, unless otherwise

speciﬁed.

14. Trademarks

TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.

Data sheet status[1] Product status[2] Deﬁnition

Objective data Development This datasheet contains data from the objective speciﬁcation for product development.Philips Semiconductors

reserves the right to change the speciﬁcation in any manner without notice.

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a

later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to

improve the design and supply the best possible product.

Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to

make changes at any time in order to improve the design, manufacturing and supply. Changes will be

communicated according to the Customer Product/Process Change Notiﬁcation (CPCN) procedure

SNW-SQ-650A.

© Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 2 May 2002 Document order number: 9397 750 09581
Contents
Philips Semiconductors PHT4NQ10T
TrenchMOS™ standard level FET
1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .  1
4 Pinning information. . . . . . . . . . . . . . . . . . . . . .  1
5 Quick reference data . . . . . . . . . . . . . . . . . . . . .  2
6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .  2
7 Thermal characteristics. . . . . . . . . . . . . . . . . . .  4
7.1 Transient thermal impedance. . . . . . . . . . . . . .  4
8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . .  5
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .  9
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . .  10
11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . .  11
12 Definitions  . . . . . . . . . . . . . . . . . . . . . . . . . . . .  11
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .  11
14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .  11