©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST4401
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
* Pulse Test: Pulse Width300µs, Duty Cycle2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage 60 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current 600 mA
PCCollector Dissipation 350 mW
TSTG Storage Temperature 150 °C
Symbol Parameter Test Condition Mi n. Max. Units
BVCBO Collector-Base Breakdown Voltage IC=100µA, IE=0 60 V
BVCEO * Collector-Emitter Breakdown Voltage IC=1.0mA, IB=0 40 V
BVEBO Emitter-Base Breakdown Voltage IE=100µA, IC=0 6 V
IBEV Bas e C u t-off Cu r ren t VCE=35V, VEB=0.4V 100 nA
ICEX Collector Cut-off Current VCE=35V, VEB=0.4V 100 nA
hFE * DC Current Gain VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=150mA
VCE=2V, IC=500mA
20
40
80
100
40 300
VCE (sat) * Collector-Emitter Saturation Voltage IC=150mA, IB=15mA
IC=500mA, IB=50mA 0.4
0.75 V
V
VBE (sat) * Base-Emitter Sa turation Voltage IC=150mA, IB=15mA
IC=500mA, IB=50mA 0.75 0.95
1.2 V
V
fTCurrent Gain Bandwidth Product IC=20mA, VCE=10V
f=100MHz 250 MHz
Cob Output Capa cita nce VCB=5V, IE=0, f=100KHz 6.5 pF
tON Tu r n On Time V CC=30V, VBE=2V
IC=150mA, IB1=15mA 35 ns
tOFF Tu rn O f f Time VCC=30V, IC=150mA
IB1=IB2=15mA 255 ns
KST4401
Switching Transistor
2X
Marking
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
KST4401
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Figure 3. Collector-Base Capacitance Figure 4. Current Gain Bandwidth Product
1 10 100 1000
10
100
1000
VCE = 1V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
0.01
0.1
1
10
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURA TI ON VOLTAGE
IC[mA], COLLECTOR CURRENT
1 10 100
1
10 IE = 0
f = 100KHz
Ccb [pF], CAPACITANCE
VCB [V], COLLECTOR-BASE VOLTAGE
1 10 100
10
100
1000
10000
VCE = 10V
fT[MHz],
CURRENT GAIN BANDWIDTH PRODUCT
IC[mA], COLLECT OR CURRENT
0.96~1.14
0.12
0.03~0.10
0.38 REF
0.40 ±0.03
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03 0.508REF
0.97REF 1.30 ±0.10 0.45~0.60
2.40 ±0.10
+0.05
–0.023
0.20 MIN
0.40 ±0.03
SOT-23
Package Dimensions
KST4401
©2002 Fairchild Semiconductor Corporation Rev. A2, November 2002
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. I1
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intended to be an exhaustive list of all such trademarks.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devic es or syst em s
which, (a) ar e intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In
Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary First Production This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconduct or reserv es the right to make
changes at any time without notice in order to improve
design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
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