Mar. 2002
6.5
5.0±0.2
2.3 2.3
0.9 MAX 1.0
5.5±0.2
2.3
10 MAX
0.5±0.1
0.5±0.2
0.8
1.5±0.2
1
.0 MAX
23
4
1
TYPE
NAME
VOLTAGE
CLASS
∗
2.3 MIN
∗ Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
MP-3
24
1
3
1
2
3
4
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) ........................................................................3A
•V
DRM ....................................................................... 600V
•I
FGT !, IRGT !, IRGT #.......................... 15mA (10mA) ✽5
BCR3AS
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
MAXIMUM RATINGS
12
600
720
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=108°C✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Ratings
3
30
3.7
3
0.3
6
0.3
–40 ~ +125
–40 ~ +125
0.26
✽1.Gate open.
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
Mar. 2002
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(di/dt)
c
V
D
(dv/dt)
c
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=125°C, VDRM applied
Tc=25°C, ITM=4.5A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C, VD=1/2VDRM
Junction to case ✽3
Tj=125°C
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Case temperature is measured on the T2 terminal.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
✽5.High sensitivity (IGT≤10mA) is also available. (IGT item1)
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Limits
Min.
—
—
—
—
—
—
—
—
0.2
—
5
Max.
2.0
1.7
1.5
1.5
1.5
15✽5
15✽5
15✽5
—
3.8
—
PERFORMANCE CURVES
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj=125°C
2. Rate of decay of on-state commutating current
(di/dt)c=–1.5A/ms
3. Peak off-state voltage
VD=400V
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
50 1234
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
T
j
= 25°C
10023 5710
123 5710
2
44
30
35
20
25
10
15
5
40
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
✽4
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
10
0
2310
0
5710
1
23 5710
2
23 5710
3
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
–1
VGD = 0.2V
PG(AV) = 0.3W
PGM = 3W
IGM =
0.5A
IFGT I, IRGT III
IRGT I
2310
–1
5710
0
23 5710
1
23 5710
2
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
IFGT I, IRGT I
IRGT III
10
8
6
4
2
050 1234
160
120
100
60
20
04.000.5 1.5 2.5 3.5
40
80
140
1.0 2.0 3.0
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
14040–40–60 –20 0 20 60 80 100120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
10
1
10
3
7
5
3
2
–60 –20 20
10
2
7
5
3
2
60 100 140
4
4
–40 0 40 80 120
160
120
100
60
20
01.60 0.2 0.6 1.0 1.4
40
80
140
0.4 0.8 1.2
140–60 –20 20 60 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
–40 0 40 80 120
160
100
80
40
20
014040–40–60 –20 0 20 60 80
140
100120
60
120
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
T
2
+
, G
+
T
2
–
, G
–
T
2
+
, G
–
TYPICAL
EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
Tj = 125°CTYPICAL EXAMPLE
I QUADRANT
III QUADRANT
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150°C
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
I
RGT III
I
RGT I
I
FGT I
10
0
7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
4
4
44
6Ω6Ω
6Ω
6V 6V
6V
R
G
R
G
R
G
A
V
A
V
A
V
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
COMMUTATION CHARACTERISTICS
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
T
j
= 125°C
I
T
= 4A
τ = 500µs
V
D
= 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
•IT (RMS) ........................................................................3A
•VDRM ....................................................................... 600V
•IFGT !, IRGT !, IRGT #.......................... 15mA (10mA) ✽5
BCR3AS
APPLICATION
Hybrid IC, solid state relay, switching mode power supply, light dimmer,
electric fan, electric blankets,
control of household equipment such as washing machine,
other general purpose control applications
(Warning)
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied.
Symbol
VDRM
VDSM
Parameter
Repetitive peak off-state voltage ✽1
Non-repetitive peak off-state voltage ✽1
Voltage class Unit
V
V
MAXIMUM RATINGS
12
600
720
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine full wave 360° conduction, Tc=133°C✽3
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Ratings
3
30
3.7
3
0.3
6
0.3
–40 ~ +150
–40 ~ +150
0.26
✽1.Gate open.
The product guaranteed maximum junction
temperature 150°C (See warning.)
6.5
5.0±0.2
2.3 2.3
0.9 MAX 1.0
5.5±0.2
2.3
10 MAX
0.5±0.1
0.5±0.2
0.8
1.5±0.2
1
.0 MAX
23
4
1
TYPE
NAME
VOLTAGE
CLASS
∗
2.3 MIN
∗ Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
MP-3
24
1
3
1
2
3
4
T1 TERMINAL
T2 TERMINAL
GATE TERMINAL
T2 TERMINAL
Mar. 2002
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN
CURRENT
MAIN
VOLTAGE
(di/dt)
c
V
D
(dv/dt)
c
Symbol
IDRM
VTM
VFGT !
VRGT !
VRGT #
IFGT !
IRGT !
IRGT #
VGD
Rth (j-c)
(dv/dt)c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage ✽2
Gate trigger current ✽2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
Tj=150°C, VDRM applied
Tc=25°C, ITM=4.5A, Instantaneous measurement
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=25°C, VD=6V, RL=6Ω, RG=330Ω
Tj=125°C/150°C, VD=1/2VDRM
Junction to case ✽3
Tj=125°C/150°C
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
V/µs
Typ.
—
—
—
—
—
—
—
—
—
—
—
!
@
#
!
@
#
✽2.Measurement using the gate trigger characteristics measurement circuit.
✽3.Case temperature is measured on the T2 terminal.
✽4.Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
✽5.High sensitivity (IGT≤10mA) is also available. (IGT item1)
ELECTRICAL CHARACTERISTICS
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
Limits
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
5/1
Max.
2.0
1.7
1.5
1.5
1.5
15✽5
15✽5
15✽5
—
3.8
—
PERFORMANCE CURVES
Test conditions Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
Tj=125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c=–1.5A/ms
3. Peak off-state voltage
VD=400V
The product guaranteed maximum junction
temperature 150°C (See warning.)
10023 5710
123 5710
2
44
30
35
20
25
10
15
5
40
0
0.5 1.5 2.5 3.51.0 2.0 3.0 4.0
102
7
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
Tj = 25°C
Tj = 150°C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
✽4
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
IFGT I, IRGT I
IRGT III
–60
10
1
10
3
7
5
3
2
10
2
7
5
3
2
4
4
–20 20 60 100 160140–40 0 40 80 120
10
1
10
3
7
5
3
2
10
2
7
5
4
4
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
10
8
6
4
2
050 1234
10
0
2310
0
5710
1
23 5710
2
23 5710
3
7
5
3
2
10
1
7
5
3
5
2
7
5
10
–1
3
2VGD = 0.1V
PG(AV) = 0.3W
PGM = 3W
IGM =
0.5A
IFGT I, IRGT III
IRGT I
160
120
100
60
20
04.00 0.5 1.5 2.5 3.5
40
80
140
1.0 2.0 3.0
2310
–1
5710
0
23 5710
1
23 5710
2
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
GATE VOLTAGE (V)
GATE CURRENT (mA)
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
GATE TRIGGER CURRENT (T
j
= t°C)
GATE TRIGGER CURRENT (T
j
= 25°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
GATE TRIGGER VOLTAGE (T
j
= t°C)
GATE TRIGGER VOLTAGE (T
j
= 25°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (°C/W)
CONDUCTION TIME
(CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
CURVES APPLY
REGARDLESS
OF CONDUCTION
ANGLE
360°
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
GATE CHARACTERISTICS
(Ι, ΙΙ AND ΙΙΙ)
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
1.61.41.2
160
120
100
60
20
000.2 0.6 1.0
40
80
140
0.4 0.8
10
3
7
5
3
2
10
2
10
4
7
5
3
2
10
5
7
5
3
2
10
6
7
5
3
2
–60 –20 20 60 100 160140–40 0 40 80 120
10
3
5
7
3
2
5
4
4
7
3
2
10
2
10
1
–60 –20 20 60 100 160140–40 0 40 80 120
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160
160
100
80
40
20
0
140
60
120
–60 –20 20 60 100 160140–40 0 40 80 120
10
3
7
5
3
2
7
5
3
2
7
5
3
2
10
2
10
1
10
0
–60 –20 20 60 100 160140–40 0 40 80 120
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (°C)
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS
CURVES APPLY
REGARDLESS OF
CONDUCTION ANGLE
RESISTIVE, INDUCTIVE
LOADS
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= t°C)
REPETITIVE PEAK OFF-STATE CURRENT (T
j
= 25°C)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
HOLDING CURRENT (T
j
= t°C)
HOLDING CURRENT (T
j
= 25°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (°C)
T
2
+
, G
+
T
2
–
, G
–
T
2
+
, G
–
TYPICAL
EXAMPLE
TYPICAL
EXAMPLE
DISTRIBUTION
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (°C)
TYPICAL EXAMPLE
100 (%)
BREAKOVER VOLTAGE (T
j
= t°C)
BREAKOVER VOLTAGE (T
j
= 25°C)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (T
j
= 125°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
T
j
= 125°CTYPICAL EXAMPLE
I QUADRANT
III QUADRANT
Mar. 2002
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
The product guaranteed maximum junction
temperature 150°C (See warning.)
10
1
10
3
7
5
3
2
10
0
23 5710
1
10
2
7
5
3
2
23 5710
2
4
4
44
IRGT III
IRGT I
IFGT I
2310
1
5710
2
23 5710
3
23 5710
4
120
0
20
40
60
80
100
140
160 7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
10
0
7
5
3
2
10
0
23 5710
1
10
1
7
7
5
3
2
23 5710
2
10
0
C1
C1 = 0.1~0.47µF
R1 = 47~100ΩC0 = 0.1µF
R0 = 100Ω
C0R0
R1
6Ω6Ω
6Ω
6V 6V
6V
RGRG
RG
A
V
A
V
A
V
LOAD
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARAC-
TERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
CRITICAL RATE OF RISE OF OFF-STATE
COMMUTATING VOLTAGE (V/µs)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT (A/ms)
TYPICAL
EXAMPLE
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I QUADRANT
III QUADRANT
MINIMUM
CHARACTERISTICS
VALUE
SUPPLY
VOLTAGE TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
BREAKOVER VOLTAGE VS.
RATE OF RISE OF
OFF-STATE VOLTAGE (Tj = 150°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
100 (%)
BREAKOVER VOLTAGE (dv/dt = xV/µs)
BREAKOVER VOLTAGE (dv/dt = 1V/µs)
Tj = 150°CTYPICAL EXAMPLE
I QUADRANT
III QUADRANT
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
RECOMMENDED CIRCUIT VALUES
AROUND THE TRIAC
GATE CURRENT PULSE WIDTH (µs)
100 (%)
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
TYPICAL EXAMPLE
TEST PROCEDURE 1
TEST PROCEDURE 3
TEST PROCEDURE 2
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS
COMMUTATION CHARACTERISTICS
(Tj = 125°C)
COMMUTATION CHARACTERISTICS
(Tj = 150°C)