Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 4.5A and 5.5A, 350V-400V 'ps(on) = 1.09 and 1.59 Features: B SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics B High input impedance @ Majority carrier device The IRF730, IRF731, IRF732 and IRF733 are n-channel enhancement-mode silicon-gate power field- effect transistors designed for applications such as switch- ing regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching tran- sistors requiring high speed and low gate-drive power. These types can be operated directiy from integrated circuits. The !RF-types are supplied in the JEDEC TO-220AB plastic package. File Number 1580 N-CHANNEL ENHANCEMENT MODE $s 92CS-33741 TERMINAL DIAGRAM TERMINAL DESIGNATION DRAIN ~ (FLANGE) O [ SOURCE mon 7 GATE TOP VIEW 92Cs-39528 JEDEC TO-220AB Absolute Maximum Ratings Parameter IRF730 RF731 JRF732 IRF733 Units | Vos. Orain - Source Voltage 400 350 400 350 v | Yocr Orain - Gate Voltage (Rgs = 20KQ) OD 400 350 400 350 v Ip @ Tc = 25C Continuous Drain Current 5.5 .5 4.5 4.5 A Ip @ Tc = 100C Continuous Drain Current 3.5 3.5 3.0 3.0 A tom Pulsed Drain Current @ 22 22 18 8 A | Ves Gate - Source Voltage +20 v | Pp @ Tc = 25C Max. Power Dissipation 75 (See Fig. 14) w Linear Derating Factor 0.6 (See Fig. 14) weee im Inductive Current, Clamped (See Fig. 15 and 16). = 100gH A 22 L 22 18 L 18 7 vat - Tag semaine mperature Range ~55 to 160 *e Lead Temperature 300 (0,063 in. (1.6mm) from case for 108} C 3-184Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 Electrical Characteristics @Tc = 25C (Unless Otherwise Specified) Parameter Type Min. | Typ. | Max. Units Test Conditions BVpss Drain - Source Breakdown Voltage IRF730 400 _ _ Vv Vas = OV IRF732 IRF731 . IRF733 350 ~ ~ v Ip = 250n4 Vgsith) Gate Threshold Voltage ALL 2.0 - | 40 v Vos = Vos. ip = 250uA Igss __ Gate-Source Leakage Forward ALL ~ =~ 500 oA Ves = 20V lgsg _ Gate-Source Leakage Reverse ALL = |-500 0A Vgs = -20V Ipsg Zero Gate Voltage Drain Current ALL - - | 250 | 2A Vog = Max. Rating, Vgg = OV ~ = | 1000 wa Vos = Max. Rating x 0.8, Vgg = OV. Te = 125C 'Dion) _On-State Drain Current 1RF730 |, 5 _ _ A IRF731 Vos?! R Vgg = 10V Os ? 'Dian) * oSton) max. YGS * inF732 [ gg | _ _ A IRF733 . RDSion) Static Drain-Source On-State F730 | oT og | 10 a Resistance IRF731 Vee = 10V,Ip = 3.00 mr7s2 | df ag | as 0 oss umoe* IRF733. . . Sts __ Forward Transconductance @ ALL 30 [40] - | sw Vos? 'oiany * Rosiont max. 'p = 3.04 Ciss Input Capacitance ALL - 600 - pF Vag = OV. Vpg = 25V,f = 1.OMHz Coss _ Output Capacitance ALL - 150 _ oF See Fig. 10 Crss Reverse Transfer Capacitance ALL - 40 _ pF tdion) __Turn-On Delay Time ALL - {| 30 ns. Vop = 175V, Ip = 3.0A,Z, = 159 ty Rise Time ALL = ~ 35 ns. See Fig. 17 tajotty _Turn-Off Delay Time ALL = = 55 ns (MOSFET switching times are essentially tf Fall Time ALL _ _ 35 ns independent of operating temperature.) Qg Total Gate Charge ; ALL _ 18 30 ac Ves = 10M, Ip = 7.04, Vog = 0.8 Max. Rating. {Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is essentially Ogs Gate-Source Charge ALL _ Pr 47 ac independent of operating temperature.) Qga Gate-Drain (*Miller) Charge ALL = 7.0 4 ac Lp Internal Orain inductance - 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL i - 45 ~ nH Measured from the drain ead, 6mm (0.25 2 in.) from package to center of diz. uo ls Internal Source Inductance ALL =~ 78 _ oH Measured from the G source lead, 6mm is {0.25 in.} from package to source $ bonding pad. Thermat Resistance Rthuc _ Junction-to-Case ALL - = 1.67 [ CW . Rincs _Case-to-Sink ALL = 10 f J cw Mounting surface flat, smooth, and greased. Ping Junction-to-Ambient ALL = = so [ecw Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF730 _ 55 A Modified MOSFET symbol (Body Diode) IRF731 ~ - showing the integral IRF732 reverse P-N junction rectifier. o + iRF733 | ~j 45 7] 4 (sq Pulse Source Current IRF730 (Body Diode} G) IRE731 - - 22 A 6 IRF732 we73a | ~ | ~ | 8 | 4 s Vsp Diode Forward Voltage @ IRF730 IRE731 7 4 16 v Te = 25C, Ig = 5.5A, Vag = OV IRF732 IRF733 - - | 1s v Tc = 25C, Ig = 4.54, Vag = OV try Reverse Recovery Time ALL _ 600 - ns Ty = 150C, lp = 5.5A, dip/dt = 100 Alus Oar Reverse Recovered Charge ALL ~_ 4.0 = ue Ty = 150C, Ip = 5.5A, die/dt = 100 Ales ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Lg + Lo. OTy = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle < 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal impedance Curve (Fig. 5}. 3-185Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 ip, DRAIN CURRENT (AMPERES) 80 vs PULSE Vs > 'D{on) X Ros(on) max. (gp, DRAIN CURRENT (AMPERES) 0 50 100 150 200 250 300 0 1 2 3 4 5 6 7 Vos, DRAIN-TO-SQUACE VOLTAGE (VOLTS! Vgs, GATE TO-SOURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 100 RATION IN 50 AREAES LIMITED Roston) 20 8 B = 10 = a : z = - > = z z = = 5S 2 5 3 e z Zz z z = 10 = a 5 = Tp = 25C 2 > ose 7 Ty = 150C Max Ringe 187 02 mi 5 1RF730, 2 0 9 2 4 6 a 0 10002 5 10 20 50 100 200 = 500 Vos. ORAIN-TO SOURCE VOLTAGE (VOLTS) Fig. 3 -- Typical Saturation Characteristics Vig, DRAIN TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area + = a 2 =z = = KE 19 $s SS 05 ae ve Su az 2s 02 wat ry ' Fz 01 od "2 = os > 0 SINGLE PULSE ei 2: THERMAL IMPEDANCE) 1 DUTY FACTOR O- . = on 2. PER UNIT BASE * Rinye = 1.67 DEG. CW. 2 9. Ty - Te * Pow. 2enscle. a aot ws = 2 S 4 2 3 2 5 w2 2 5 ot 2 5 10 2 5 : 1y, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 3-186Standard Power MOSFETs SCONDUCTANCE (SIEMENS) M5, TRAN! Vos > 'p{oni * Rpston) aus TEST 9 2 5 8 10 Ip. DRAIN CURRENT (AMPERES) Fig. 6 -- Typical Transconductance Vs. Drain Current BVoss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE INORMALIZED) o 40 a0 120 160 Ty, JUNCTION TEMPERATURE (C Fig. 8 Breakdown Voltage Vs. Temperature 7000 Vos * . a 1600 Cigg = Cge + Cg, Cus Crus * Cyd Cg, C Com Ce? et = Cys + Cog C. CAPACITANCE (pF) 9 w 20 30 40 50 Vos. ORAIN TOSOURCE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage IRF730, IRF731, IRF732, IRF733 S ~ wn Ty= 1509C . s SE T= 150C Ipp. REVERSE DRAIN CURRENT (AMPERES) . Ty = 2506 a 1 2 3 4 Vp, SOUFCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 7 Typical Source-Drain Diode Forward Voltage Rosionj. ORAIN-FO-SOURCE ON RESISTANCE (NORMALIZED) -40 0 4g 80 420 1, JUNCTION TEMPERATURE (C) Fig. 9 Normalized On-Resistance Vs. Temperature 20 Vos = 80V a Vps* t > 220V, (AF 730, 732 on Vgs. GATE-TO-SQUACE VOLTAGE (VOLTS) 5 Ig 2 7A FOR TEST CIRCUIT SEE FIGURE 18 0 8 16 4 32 40 Qy, TOTAL GATE CHARGE (nC) Fig. 11 ~ Typical Gate Charge Vs. Gate-to-Source Voltage 3-187Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 a = = = 8 8 Veg * tov _ z 2 2 a : o m2 Ves = 20V 2 / zs & 5 a a 3 a 5 y = 3 z+ 2 3g 2) a = _ a = s = 2 s 3 Apsion) MEASURED WITH CURRENT PULSE OF 2.0 rs DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS MINIMAL.) aber salam, i 0 0 5 19 15 20 28 30 8 50 18 100 125 150 Ip. DRAIN CURRENT (AMPERES) Tc, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 - Maximum Drain Current Vs. Case Temperature a0 T 7 Sooper tf , of tN 2 r | 5 5 2 50 }_} 5 \ = = 49 + at g 6 & | | = 0 T 2 \ : * 2, - opp 19 } + + | L jk 1 Qo 20 a 60 80 100 120, 140 To, CASE TEMPERATURE 10C) Fig. 14 Power Vs. Temperature Derating Curve VARY tp TO OBTAIN REQUIRED PEAK y ) <0.58V p55. Ve = 0.758Vyg5 Fig. 15 Clamped Inductive Test Circuit Fig. 16 Clamped Inductive Waveforms Vos CURRENT USOLATED REGULATOR SUPPLY) SAME TYPE ' Vpg > Wav Y a2ut BATTERY BOS2 ORE - TkHe Vo tp tas TO Score Fig. 17 Switching Time Test Circuit CURRENT = CURRENT SHUNT SHUNT Fig. 18 Gate Charge Test Circuit 3-188