IINMERSIL IVN5200/1 HN Series n-Channel Enhancement-mode Vertical Power MOSFET FEATURES APPLICATIONS * High speed, high current switching Switching power supplies * inherent current sharing capability when paraileled DC to DC inverters * Directly interfaces to CMOS, DTL, TTL logic Logic buffers Simple, straight-forward DC biasing e Line drivers Extended safe operating area Motor controllers Py, Inherently temperature stable Power amplifiers ABSOLUTE MAXIMUM RATINGS SCHEMATIC DIAGRAM = (OUTLINE DwG. T0-66) (Ta = 25C unless otherwise noted) Drain-source Voltage : "O" IVN5200HND, IVNS201HND .................. 40V IVNS5200HNE, IVNS201HNE ................... 60V (see note 2) IVNS200HNF, IVNS201HNF ...... 22... cece eee 80V 4 Drain-gate Voltage I ! IVN5200HND, IVNS201HND ...............00- 40V a seeare IVNS5200HNE, IVN5201HNE .......... 2... cae 60V GaTE ' IVNS200HNF, IVNS201HNF ......... 0. eee ee B0V Ls Continuous Drain Current ..............00. 0005 5.0A Peak Drain Current (see note 1) .............066 12A Gate-source Forward Voltage .............0.005 +30V source Gate-source Reverse Voltage ............000005 ~30V Body internally connected to source. Thermal Resistance, Junction to Case ......4.17C/W Drain common to case. Continuous Device Dissipation at (or below). 25C Case Temperature .............,.. ) eae 30W CHIP TOPOGRAPHY Linear Derating Factor ................... 240mW/C Operating Junction Temperature Range................ --55 to +150C Storage Temperature Range.......... --55 to +150C Lead Temperature (1/16 in. from case for 10 sec) ............. +300C >| 9 mil bee SOURCE 14 mil 4 Note 1. Maximum pulse width 80,.sec, maximum duty cycle 1.0% Note 2. The Drain-source diode is an integral part of the MOSFET structure. . 14 mil be ____-_-_- pw) 90 a (en i - 100 mit >| 2-23IVN5200/1 HN Series INTERSIL ELECTRICAL CHARACTERISTICS (25C unless otherwise noted), Vas = 0 . IVN5200HND IVN5200HNE IVNS200HNF CHARACTERISTICS IVNS201HND IVN5201HNE INVS201HNF | UNIT TEST CONDITIONS MIN | Typ [MAX] MIN | TYP | MAX [ MIN | TYP | MAX in-' Oo" 1 BVpss Drain-Source Breakdown 40 60 80 Vos = 0, Ip = 100uA = Voltage v 2 Gate IVN5200 Series | 0.8 20 | 08 2.0 | 08 2.0 1i Vas) Threshotd | Vos = Ves, Io = 5mA 3 Vottage 1VN5201 Series | 0.8 36 | 0.8 3.6 | 0.8 3.6 | 4| 0.2 [ 20 0.2 | 20 0.2 | 20 Vas = 12V, Vos = 0 Gate- Leak; [5] | 18s Gate-Body Leakage 100 100 100 | "* [Ves = 12V, Vos = 0, Ta = 1125C 6| 100 ~ 100 100 | uA | Vos = Max. Rating, Vas = 0 +4 Vv [7] F | toss rere Gate Vonage 5.0 5.0 5.0 | mA | Vos=0.80 Max. Rating, Vas = 0, Ta=+125C [Bit . 100 100 100 nA_| Vos = 24V, Vas = 0 L211 | toon) ON*State 1VN5200 Series| 5.0] 10 5.0 | 10 5.0 | 10 a. [wos = 24V, Vas = 10V 10/6 Dion Drain Current [IVN5201 Series | 5.0 10 5.0 10 5.0 | 10 Vos = 24V, Vas = 12V OHND . : = = 2. s Drain-Source | |VNE200HNE 15 16 1.5 Vas = 5V, Ip = 2.0A 12) | Voeton} Saturation IVN5200HNF 19 | 25 19 [ 25 191 25 | |, [Vas= tov. Ip = 5.0A {13 sien Voltage NS3017 NE 12 42 12 Vas = 7V, Ip = 2.0A (Note 1) 14 9 VN5201HNE 18 | 25 1.8 | 25 1.8 | 25 Vas = 12V, Ip = 5.0A 15 Static Drain- |1yyy5200 Series 0.38 | 0.50 0.38 | 0.50 0.38 | 0.50 Vas = 10V +- ros(on} Source ON - to = 5.04 16 Resistance 1VN5201 Series 0.36 | 0.50 0.36 | 0.50 0.36} 0.50} 9 |. Vas = 12V 7 Small-Signal_|1yvN5200 Series 0.38 | 0.50 0.38 | 0.50 0.38 | 0.50 Vas = 10V Ip = 5.0A - tds(on} Drain-Source - 7 18 ON Resistance |!VN5201 Series 0.36 | 0.50 0.36 | 0.50 0.36 | 0.50 Vas = 12V f= 1KHz L-| D 19] y | ots Forward Transconductance 1.0} 1.8 1.0 |. 1.8 1.0 | 1.8 mho | Vps = 24V, Ip = 5.0A, f = {KHz 20} Ny | Ciss input Capacitance 210 | 250 210 | 250 210 | 250 21,/A | Coss Output Capacitance 160 | 200 160 | 200 160 | 200 pF | Vos = 24V, Vas = 0 (Note 2) a M [Crs Reverse Transfer Capacitance 45 | 60 45 { 80 4s | 60 f= 1MHz 23]! [Talon) _ Turn-ON Delay Time 4 [ 20 4 | 20 4 [ 20 7 jaa] e Tt Rise Time 4 | 20 4 [20 4 | 20 o = 0A "J See Switching Times Test Not 25| | talon) _Turn-OFF Delay Time 4] 20 4 | 20 4 [20] * | Sheu page 2- 4s (Note 2) l26| lt Fall Time 4 | 20 4 | oO 4 | 2 " . Note 1. Pulse test 80usec, 1% duty cycle. Note 2. Sample test. THERMAL RESPONSE POWER DISSIPATION vs 1 CASE TEMPERATURE a 36 2 < 2 30 z a 3 24 5 5 18 as a 2% EY zs a 3 6 So | bg a 9 o a 0 +40 +80) +120 +160) +200 ae t+ T, CASE TEMPERATURE (C) = t>+] . DUTY CYCLE, D=1,/t, OC SAFE OPERATING REGION Te = 25C 0. hor 0.1 1 10. 100 1000 100 t, TIME {msec} 2 = = 5 10 ae ac x 2 oO Zz = 10 ec a t 2 0. 1 1.0 10 100 Note: For other 5200 family characteristic curves, see page 2-43. Vpg ~ DRAIN-SOURCE VOLTAGE (VOLTS) 2-24