CY7C1041CV33 Automotive
4-Mbit (256 K × 16) Static RAM
Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600
Document Number: 001-86495 Rev. *D Revised December 22, 2017
4-Mbit (256 K × 16) Static RAM
Features
■Temperature ranges
❐Automotive-E: –40 °C to 125 °C
■High speed
❐tAA = 10 ns
■Low active power
❐468 mW (max)
■2.0 V data retention
■Automatic power down when deselected
■Independent control of upper and lower bits
■Easy memory expansion with Chip Enable (CE) and Output
Enable (OE) features
■Available in Pb-free 48-ball grid array (BGA) package
Functional Description
The CY7C1041CV33 Automotive is a high performance
complementary metal oxide semiconductor (CMOS) static RAM
organized as 262,144 words by 16 bits. This device has an
automatic power down feature that significantly reduces power
consumption when deselected.
To write to the device, take CE and Write Enable (WE) inputs
LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins
(I/O0 through I/O7), is written into the location specified on the
address pins (A0 through A17). If Byte High Enable (BHE) is
LOW, then data from I/O pins (I/O8 through I/O15) is written into
the location specified on the address pins (A0 through A17).
To read from the device, take CE and OE LOW while forcing the
Write Enable (WE) HIGH. If BLE is LOW, then data from the
memory location specified by the address pins appear on I/O0 to
I/O7. If Byte High Enable (BHE) is LOW, then data from memory
appears on I/O8 to I/O15. For more information, see the Truth
Table on page 10 for a complete description of Read and Write
modes.
The input and output pins (I/O0 through I/O15) are placed in a
high impedance state when the device is deselected (CE HIGH),
the outputs are disabled (OE HIGH), the BHE and BLE are
disabled (BHE, BLE HIGH), or during a write operation (CE LOW
and WE LOW).
For a complete list of related resources, click here.
Logic Block Diagram
256Kx16
RAMARRAY
ROWDECODER
A1
A2
A3
A4
A5
A6
A7
A8
A9
A0
COLUMN
DECODER
A10
SENSE
AMPLIFIERS
ECCDECODER
A11
A12
A13
A14
A15
A16
A17
ECCENCODER DATAIN
DRIVERS
I/O0‐I/O7
I/O8‐I/O15
BHE
WE
OE
BLE
CE
Document Number: 001-86495 Rev. *D Page 2 of 15
CY7C1041CV33 Automotive
Contents
Pin Configuration .............................................................3
Selection Guide ................................................................3
Maximum Ratings ............................................................. 4
Operating Range ............................................................... 4
Electrical Characteristics .................................................4
Capacitance ...................................................................... 5
Thermal Resistance ..........................................................5
AC Test Loads and Waveforms .......................................5
Switching Characteristics ................................................6
Switching Waveforms ......................................................7
Truth Table ...................................................................... 10
Ordering Information ......................................................11
Ordering Code Definitions ......................................... 11
Package Diagrams .......................................................... 12
Acronyms ........................................................................ 13
Document Conventions ................................................. 13
Units of Measure ....................................................... 13
Document History Page ................................................. 14
Sales, Solutions, and Legal Information ...................... 15
Worldwide Sales and Design Support ....................... 15
Products .................................................................... 15
PSoC® Solutions ...................................................... 15
Cypress Developer Community ................................. 15
Technical Support ..................................................... 15
Document Number: 001-86495 Rev. *D Page 3 of 15
CY7C1041CV33 Automotive
Pin Configuration
Figure 1. 48 ball BGA pinout [1]
BLE
_____
OE A0A1A2NC
I/O8BHE A3A4CE I/O0
I/O9I/O10 A5A6I/O1I/O2
VSS I/O11 A17 A7I/O3VCC
VCC I/O12 NC A16 I/O4VSS
I/O14 I/O13 A14 A15 I/O5I/O6
I/O15 NC A12 A13 WE I/O7
NC A8A9A10 A11 NC
_____
1 2 3 4 5 6
A
B
C
D
E
F
G
H
_____
_____
_____
Selection Guide
Description -10 Unit
Maximum access time 10 ns
Maximum operating current Automotive-E 130 mA
Maximum CMOS standby current Automotive-E 15 mA
Note
1. NC pins are not connected on the die.
Document Number: 001-86495 Rev. *D Page 4 of 15
CY7C1041CV33 Automotive
Maximum Ratings
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage temperature ................................ –65 C to +150 C
Ambient temperature with
power applied .......................................... –55 C to +125 C
Supply voltage on VCC
relative to GND [2].........................................–0.5 V to +4.6 V
DC voltage applied to outputs
in High Z state [2] .................................–0.5 V to VCC+ 0.5 V
DC input voltage [2] .............................. –0.5 V to VCC+ 0.5 V
Current into outputs (LOW) ........................................ 20 mA
Static discharge voltage
(MIL-STD-883, method 3015) ................................. > 2001 V
Latch up current ..................................................... > 200 mA
Operating Range
Range Ambient Temperature (TA) VCC
Automotive-E –40 C to +125 C 3.3 V 10%
Electrical Characteristics
Over the Operating Range
Parameter Description Test Conditions -10 Unit
Min Max
VOH Output HIGH voltage VCC = Min, IOH = –4.0 mA 2.4 – V
VOL Output LOW voltage VCC = Min, IOL = 8.0 mA – 0.4 V
VIH Input HIGH voltage 2.0 VCC + 0.3 V
VIL Input LOW voltage [2] –0.3 0.8 V
IIX Input leakage current GND < VI < VCC Automotive-E –20 +20 A
IOZ Output leakage current GND < VI < VCC,
Output disabled
Automotive-E –20 +20 A
ICC VCC operating supply current VCC = Max, IOUT = 0 mA,
f = fMAX = 1/tRC
Automotive-E – 130 mA
ISB1 Automatic CE power down
current – TTL Inputs
Max VCC, CE > VIH,
VIN > VIH or VIN < VIL, f = fMAX
Automotive-E – 45 mA
ISB2 Automatic CE power down
current – CMOS inputs
Max VCC, CE > VCC – 0.3 V,
VIN > VCC – 0.3 V, or
VIN < 0.3 V, f = 0
Automotive-E – 15 mA
Note
2. VIL (min) = –2.0 V for pulse durations of less than 20 ns.
Document Number: 001-86495 Rev. *D Page 5 of 15
CY7C1041CV33 Automotive
Capacitance
Parameter [3] Description Test Conditions Max Unit
CIN Input capacitance TA = 25 C, f = 1 MHz, VCC = 3.3 V 8 pF
COUT Output capacitance 8pF
Thermal Resistance
Parameter [3] Description Test Conditions 48-ball BGA Unit
JA Thermal resistance
(junction to ambient)
Still air, soldered on a 3 × 4.5 inch, four-layer printed circuit
board
38.15 C/W
JC Thermal resistance
(junction to case)
9.15 C/W
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms [4]
90%
10%
3.0 V
GND
90%
10%
ALL INPUT PULSES
3.3 V
OUTPUT
30 pF*
* CAPACITIVE LOAD CONSISTS
OF ALL COMPONENTS OF THE
TEST ENVIRONMENT
(b)
R 317
R2
351
Rise Time: 1 V/ns Fall Time: 1 V/ns
30 pF*
OUTPUT
Z = 50
50
1.5 V
(b)
(a)
3.3 V
OUTPUT
5 pF
(c)
R 317
R2
351
10-ns devices: 12-ns devices:
High-Z characteristics:
Notes
3. Tested initially and after any design or process changes that may affect these parameters.
4. AC characteristics (except High Z) for 10-ns parts are tested using the load conditions shown in Figure 2 (a). High Z characteristics are tested using the test load shown
in Figure 2 (c).
Document Number: 001-86495 Rev. *D Page 6 of 15
CY7C1041CV33 Automotive
Switching Characteristics
Over the Operating Range
Parameter [5] Description -10 Unit
Min Max
Read Cycle
tpower[6] VCC (typical) to the first access 100 – s
tRC Read cycle time 10 – ns
tAA Address to data valid – 10 ns
tOHA Data hold from address change 3 – ns
tACE CE LOW to data valid – 10 ns
tDOE OE LOW to data valid – 6 ns
tLZOE OE LOW to Low Z [7] 0–ns
tHZOE OE HIGH to High Z [7, 8] –5ns
tLZCE CE LOW to Low Z [7] 3–ns
tHZCE CE HIGH to High Z [7, 8] –5ns
tPU CE LOW to power up 0 – ns
tPD CE HIGH to power down – 10 ns
tDBE Byte enable to data valid – 6 ns
tLZBE Byte enable to Low Z 0 – ns
tHZBE Byte disable to High Z – 6 ns
Write Cycle [9, 10]
tWC Write cycle time 10 – ns
tSCE CE LOW to write end 7 – ns
tAW Address setup to write end 7 – ns
tHA Address hold from write end 0 – ns
tSA Address setup to write start 0 – ns
tPWE WE pulse width 7–ns
tSD Data setup to write end 5 – ns
tHD Data hold from write end 0 – ns
tLZWE WE HIGH to Low Z [7] 3–ns
tHZWE WE LOW to High Z [7, 8] –5ns
tBW Byte enable to end of write 7 – ns
Notes
5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5 V, and input pulse levels of 0 to 3.0 V.
6. tPOWER gives the minimum amount of time that the power supply is at typical VCC values until the first memory access is performed.
7. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.
8. tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (c) of Figure 2 on page 5. Transition is measured 500 mV from steady state voltage.
9. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW, and BHE/BLE LOW. CE, WE, and BHE/BLE must be LOW to initiate a write.
The transition of these signals terminate the write. The input data setup and hold timing is referenced to the leading edge of the signal that terminates the write.
10. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.
Document Number: 001-86495 Rev. *D Page 7 of 15
CY7C1041CV33 Automotive
Switching Waveforms
Figure 3. Read Cycle No. 1 (Address Transition Controlled) [11, 12]
Figure 4. Read Cycle No. 2 (OE Controlled) [12, 13]
PREVIOUS DATA VALID DATA VALID
RC
tAA
tOHA
tRC
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZBE
tPD
tDBE
tLZBE
tHZCE
HIGH
IMPEDANCE
ICC
ISB
OE
CE
ADDRESS
DATA OUT
VCC
SUPPLY
BHE,BLE
CURRENT
Notes
11. Device is continuously selected. OE, CE, BHE, and/or BLE = VIL.
12. WE is HIGH for read cycle.
13. Address valid prior to or coincident with CE transition LOW.
Document Number: 001-86495 Rev. *D Page 8 of 15
CY7C1041CV33 Automotive
Figure 5. Write Cycle No. 1 (CE Controlled) [14, 15]
Figure 6. Write Cycle No. 2 (BLE or BHE Controlled)
Switching Waveforms (continued)
tHD
tSD
tSCE
tSA
tHA
tAW
tPWE
tWC
BW
t
DATA IO
ADDRESS
CE
WE
BHE,BLE
tHD
tSD
tBW
tSA
tHA
tAW
tPWE
tWC
tSCE
DATA I/O
ADDRESS
BHE,BLE
CE
WE
Notes
14. Data I/O is high impedance if OE, BHE, and/or BLE = VIH.
15. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high impedance state.
Document Number: 001-86495 Rev. *D Page 9 of 15
CY7C1041CV33 Automotive
Figure 7. Write Cycle No. 3 (WE Controlled, LOW)
Switching Waveforms (continued)
tHD
tSD
tSCE
tHA
tAW
tPWE
tWC
tBW
tSA
tLZWE
tHZWE
DATA I/O
ADDRESS
CE
WE
BHE,BLE
Document Number: 001-86495 Rev. *D Page 10 of 15
CY7C1041CV33 Automotive
Truth Table
CE OE WE BLE BHE I/O0–I/O7I/O8–I/O15 Mode Power
H X X X X High Z High Z Power down Standby (ISB)
L L H L L Data Out Data Out Read – all bits Active (ICC)
L L H L H Data Out High Z Read – lower bits only Active (ICC)
L L H H L High Z Data Out Read – upper bits only Active (ICC)
L X L L L Data In Data In Write – all bits Active (ICC)
L X L L H Data In High Z Write – lower bits only Active (ICC)
L X L H L High Z Data In Write – upper bits only Active (ICC)
L H H X X High Z High Z Selected, outputs disabled Active (ICC)
Document Number: 001-86495 Rev. *D Page 11 of 15
CY7C1041CV33 Automotive
Ordering Code Definitions
Ordering Information
Speed
(ns) Ordering Code
Package
Diagram Package Type Operating
Range
10 CY7C1041CV33-10BAJXE 001-85259 48-ball BGA (Pb-free) Automotive-E
Temperature range:
E = Automotive-E
Pb-free
J = JEDEC
Package Type:
BA = 48-ball BGA
Speed grade: 10 ns
V33 = 3.3 V
Process Technology: C = 150 nm
Bus Width: 1 = × 16 bits
Density: 04 = 4-Mbit
Family Code: 1 = Fast Asynchronous SRAM family
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
7CY 1 -BA
10 E
CV33 X
104CJ
Document Number: 001-86495 Rev. *D Page 12 of 15
CY7C1041CV33 Automotive
Package Diagrams
Figure 8. 48-ball FBGA (6 × 8 × 1.2 mm) BA48M/BK48M (0.35 mm Ball Diameter) Package Outline, 001-85259
001-85259 *A
Document Number: 001-86495 Rev. *D Page 13 of 15
CY7C1041CV33 Automotive
Acronyms Document Conventions
Units of Measure
Acronym Description
BHE Byte High Enable
BLE Byte Low Enable
CMOS Complementary Metal Oxide Semiconductor
CE Chip Enable
I/O Input/Output
OE Output Enable
SRAM Static Random Access Memory
TTL Transistor-Transistor Logic
VFBGA Very Fine-Pitch Ball Grid Array
WE Write Enable
Symbol Unit of Measure
°C degree Celsius
MHz megahertz
µA microampere
µs microsecond
mA milliampere
mm millimeter
ms millisecond
mV millivolt
mW milliwatt
ns nanosecond
% percent
pF picofarad
Vvolt
Wwatt
Document Number: 001-86495 Rev. *D Page 14 of 15
CY7C1041CV33 Automotive
Document History Page
Document Title: CY7C1041CV33 Automotive, 4-Mbit (256 K × 16) Static RAM
Document Number: 001-86495
Revision ECN Orig. of
Change
Submission
Date Description of Change
** 3925192 TAVA 04/04/2013 New data sheet.
*A 4103029 MEMJ 08/23/2013 Changed status from Preliminary to Final.
Updated Ordering Information:
No change in part numbers.
Replaced “51-85087” with “001-85259” in “Package Diagram” column.
Updated Package Diagrams:
spec 001-85259 – Changed revision from ** to *A.
Updated in new template.
*B 4396000 VINI 06/02/2014 No technical updates.
Completing Sunset Review.
*C 4724503 PSR 04/14/2015 Updated Functional Description:
Added “For a complete list of related resources, click here.” at the end.
Updated to new template.
Completing Sunset Review.
*D 6003585 AESATP12 12/22/2017 Updated logo and copyright.
Document Number: 001-86495 Rev. *D Revised December 22, 2017 Page 15 of 15
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CY7C1041CV33 Automotive
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