CZT2000 NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION: SOT-223 CASE MAXIMUM RATINGS (T,=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO 200 VCES 200 VEBO 10 Io 600 Pp 2.0 Ty.Tstg -65 to +150 OJA 62.5 ELECTRICAL CHARACTERISTICS (T,=25C unless otherwise noted) SYMBOL TEST CONDITIONS MIN IcBo Vop=180V \EBO VBE=10V BVcES Ic=1.0mMA 200 VCE(SAT) Ic=20mA, Ip=25pA VCE(SAT) Ic=80mA, Ip=40ynA VCE(SAT) Ic=160mA, Ip=100LA VBE(ON) VoE=5.0V, Ic=160mA hee VoEe=5.0V, Io=100nA 3,000 hFE VcE=5.0V, IG=10mA 3,000 hee VoE=5.0V, Ic=1 60mA 3,000 386 central . Semiconductor Corp. MAX 500 100 0.9 1.1 1.2 2.0 The CENTRAL SEMICONDUCTOR CZT2000 type is an NPN Epitaxial Planar Silicon Darlington Transistor manufactured in an epoxy molded surface mount package, designed for applications requiring extremely high voltages and high gain capability. UNITS mA C OCW UNITS <<<<< >>All dimensions in inches (mm). .248(6.90)_ o-7" .2864(6.71) uC 78) eatce} 4 -1486(9.71) .287(7.28) is = 1 2 | 3 -009(0.23) sO . .033 -84).. OTS (O-88) aff partheey .091(2.31) -024(0.81) .031(0.79) -181(4.60) LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR pray SHEET R2 387