NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant BPX 38 Wesentliche Merkmale Features * Speziell geeignet fur Anwendungen im Bereich von 450 nm bis 1120 nm * Hohe Linearitat * Hermetisch dichte Metallbauform (TO-18) mit Basisanschlu, geeignet bis 125 C * Gruppiert lieferbar * Especially suitable for applications from 450 nm to 1120 nm * High linearity * Hermetically sealed metal package (TO-18) with base connection, suitable up to 125 C * Available in groups Anwendungen Applications * Lichtschranken fur Gleich- und Wechsellichtbetrieb * Industrieelektronik * Messen/Steuern/Regeln" * Photointerrupters * Industrial electronics * For control and drive circuits Typ Type Bestellnummer Ordering Code BPX 38 Q62702P0015 BPX 38-2/3 Q62702P3578 BPX 38-3 Q62702P0015S003 BPX 38-4 Q62702P0015S004 2007-03-29 1 BPX 38 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ... + 125 C Kollektor-Emitterspannung Collector-emitter voltage VCE 50 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, < 10 s Collector surge current ICS 200 mA Emitter-Basisspannung Emitter-base voltage VEB 7 V Verlustleistung, TA = 25 C Total power dissipation Ptot 220 mW Warmewiderstand Thermal resistance RthJA 450 K/W 2007-03-29 2 BPX 38 Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 880 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 450 ... 1120 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 0.675 mm2 Abmessung der Chipflache Dimensions of chip area LxB LxW 1x1 mm x mm Halbwinkel Half angle 40 Grad deg. IPCB IPCB 1.8 5.5 A A CCE CCB CEB 23 39 47 pF pF pF ICEO 20 ( 100) nA Fotostrom der Kollektor-Basis-Fotodiode Photocurrent of collector-base photodiode Ee = 0.5 mW/cm2, VCB = 5 V Ev = 1000 Ix, Normlicht/standard light A, VCB = 5 V Kapazitat Capacitance VCE = 0 V, f = 1 MHz, E = 0 VCB = 0 V, f = 1 MHz, E = 0 VEB = 0 V, f = 1 MHz, E = 0 Dunkelstrom Dark current VCE = 25 V, E = 0 2007-03-29 3 BPX 38 Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Bezeichnung Parameter Symbol Symbol Wert Value -2 Fotostrom, = 950 nm Photocurrent Ee = 0.5 mW/cm2, VCE = 5 V IPCE Ev = 1000 Ix, Normlicht/standard light A, IPCE VCE = 5 V -3 Einh. Unit -4 -5 0.2 ... 0.4 0.32 ... 0.63 0.5 ... 1.0 0.8 mA 0.95 1.5 2.3 3.6 mA Anstiegszeit/Abfallzeit Rise and fall time IC = 1 mA, VCC = 5 V, RL = 1 k tr , tf 9 12 15 18 s Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage IC = IPCEmin1) x 0.3 Ee = 0.5 mW/cm2 VCEsat 200 200 200 200 mV Stromverstarkung Current gain Ee = 0.5 mW/cm2, VCE = 5 V I PCE ----------I PCB 170 280 420 650 - 1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe. 1) IPCEmin is the min. photocurrent of the specified group. 2007-03-29 4 BPX 38 Relative Spectral Sensitivity Srel = f () Photocurrent IPCE = f (Ee), VCE = 5 V Total Power Dissipation Ptot = f (TA) Output Characteristics IC = f (VCE), IB = Parameter Output Characteristics IC = f (VCE), IB = Parameter Dark Current ICEO = f (VCE), E = 0 Photocurrent IPCE/IPCE25o = f (TA), VCE = 5 V Dark Current ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0 Collector-Emitter Capacitance CCE = f (VCE), f = 1 MHz, E = 0 2007-03-29 5 BPX 38 Collector-Base Capacitance CCB = f (VCB), f = 1 MHz, E = 0 Emitter-Base Capacitance CEB = f (VEB), f = 1 MHz, E = 0 Directional Characteristics Srel = f () 2007-03-29 6 BPX 38 Mazeichnung Package Outlines Radiant sensitive area 1.1 0.9 1.1 (0 (0 .04 .03 5) 14.5 (0.571) 5.3 (0.209) 12.5 (0.492) 5.0 (0.197) 5.5 (0.217) ) 43 3) .0 (0 0. 5) .03 0 9( E C B 2.54 (0.100) spacing o0.45 (0.018) o4.6 (0.181) (2.7 (0.106)) o4.8 (0.189) Chip position o5.6 (0.220) o5.3 (0.209) 5.0 (0.197) Approx. weight 1.0 g GMOY6018 Mae in mm (inch) / Dimensions in mm (inch). 2007-03-29 7 BPX 38 Lotbedingungen Soldering Conditions Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802) OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2007-03-29 8