SAMSUNG SEMICONDUCTOR INC = -LHE D Boracay poove97 7 I _MMBTAS6 PNP EPITAXIAL SILICON TRANSISTOR T-34-19 DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T,=25C) Characteristic Symbol | Rating | Unit Collector-Base Voltage Vepo 80 Vv Collector-Emitter Voltage Vceo -80 } V Emitter-Base Voltage , Veso -4 Vv Collector Current le -500 mA Collector Dissipation - Pr 350 mw Storage Temperature Tstg 150 C Thermal Resistance Junction to Ambient Rtht-a} 357 | C/W + Refer to MPSA55 for graphs 1, Base 2. Emitter 3. Collector ELECTRICAL CHARACTERISTICS (T,=25C) Characteristic Symbol Test Condition Min Max Unit *Collector-Emitter Breakdown Voltage | BVcto k=1mMA, lb=0 -80 Vv Emitter-Base Breakdown Voltage BVeso ie=100pA, Ic=0 4 . Vv Collector Cutoff Current kao Vcp= 80V, le=O -0.1 pA Collector Cutoff Current leeo Vce=~-6OV, Ip=0 0.1 pA DBC Current Gain Dee Vce=-1V, lb>=-10mA 50 Vce=-1V, t=100mA - 50 Collector-Emitter Saturation Voltage Vcr (sat) b= ~100mA, Ip=10mA -0.25 v Base-Emitter On Voltage Vee (on) Vee=1V, fb-=-100MA -1.2 v Current Gain-Bandwidth Product fr Vee=1V, c-=100mA, f=100MHz 50 MHz * Pulse Test: PWS300ys, Duty Cycles<2% Marking FA ~ 2G i cb SAMSUNG SEMICONDUCTOR 567