Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 0 1Publication Order Number:
NSD914XV2T1/D
NSD914XV2T1
Preferred Device
High−Speed
Switching Diode
•High-Speed Switching Applications
•Lead Finish: 100% Matte Sn (Tin)
•Qualified Maximum Reflow Temperature: 260°C
•Extremely Small SOD-523 Package
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Reverse Voltage VR100 V
Forward Current IF200 mAdc
Peak Forward Surge Current IFM(surge) 500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR- 5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD120
1.57 mW
mW/°C
Thermal Resistance
Junction-to-Ambient RJA TBD °C/W
Junction and Storage Temperature TJ, Tstg 150 °C
1. FR-4 @ Minimum Pad
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IBR = 100 Adc) V(BR) 100 - Vdc
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
VF-
-25
5.0 nAdc
Adc
Diode Capacitance
(VR = 0, f = 1.0 MHz) CT- 4.0 pF
Forward Recovery Voltage
(IF = 10 mAdc) VFR - 1.0 Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) trr - 4.0 ns
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Preferred devices are recommended choices for future use
and best overall value.
1
CATHODE 2
ANODE
SOD-523
CASE 502
PLASTIC
5D = Specific Device Code
d = Date Code
MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
NSD914XV2T1 SOD-523 4 mm pitch
3000/Tape & Reel
XXd
NSD914XV2T1
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2
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
+10 V 2.0 k
820 Ω
0.1 µF
DUT
VR
100 µH
0.1 µF
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
trtpt
10%
90%
IF
IR
trr t
iR(REC) = 1.0 mA
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
IF
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
Figure 2. Forward Voltage
VF, FORWARD VOLTAGE (VOLTS)
1.0
10
100
0.1
Figure 3. Leakage Current
VR, REVERSE VOLTAGE (VOLTS)
10
0
I
1.0
0.1
0.001
0.01
10 20 30 40 50
I
1.0 1.20.2 0.4 0.6 0.8
Figure 4. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
0
C
0.68
0.64
0.60
0.52
0.56
2.0 4.0 6.0 8.0
, FORWARD CURRENT (mA)
F
TA = 85°CTA = −40°C
TA = 25°C
, REVERSE CURRENT ( A)
R
, DIODE CAPACITANCE (pF)
D
TA = 25°C
TA = 55°C
TA = 85°C
TA = 150°C
TA = 125°C
NSD914XV2T1
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3
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
-T-
SEATING
PLANE
B
A-X-
-Y-
D2 PL
T
M
0.08 (0.003) X Y
C
S
JK
DIM MIN NOM MAX
MILLIMETERS
A1.10 1.20 1.30
B0.70 0.80 0.90
C0.50 0.60 0.70
D0.25 0.30 0.35
J0.07 0.14 0.20
K0.15 0.20 0.25
S1.50 1.60 1.70
0.043 0.047 0.051
0.028 0.032 0.035
0.020 0.024 0.028
0.010 0.012 0.014
0.0028 0.0055 0.0079
0.006 0.008 0.010
0.059 0.063 0.067
MIN NOM MAX
INCHES
SOD-523
CASE 502-01
ISSUE O
NSD914XV2T1
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4
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NSD914XV2T1/D
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