DDR2 SDRAM K4T51163QI 512Mb I-die DDR2 SDRAM Specification 84FBGA with Halogen-Free & Lead-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1. For updates or additional information about Samsung products, contact your nearest Samsung office. 2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. * Samsung Electronics reserves the right to change products or specification without notice. 1 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI Revision History Revision Month Year 1.0 July 2009 History - Initial Release 2 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI Table Contents 1.0 Ordering Information ...................................................................................................................4 2.0 Key Features ................................................................................................................................4 3.0 Package pinout/Mechanical Dimension & Addressing ............................................................5 3.1 x16 Package Pinout (Top view) : 84ball FGGA Package .....................................................................5 3.2 FBGA Package Dimension (x16) .....................................................................................................6 4.0 5.0 6.0 7.0 Input/Output Functional Description .........................................................................................7 DDR3 SDRAM Addressing ..........................................................................................................8 Absolute Maximum Ratings ........................................................................................................9 AC & DC Operation Conditions ..................................................................................................9 7.1 Recommended DC operating Conditions (SSTL - 1.8) .......................................................................9 7.2 Operating Temperature Condition ................................................................................................10 7.3 Input DC Logic Level ..................................................................................................................10 7.4 Input AC Logic Level ..................................................................................................................10 7.5 AC Input Test Conditions ............................................................................................................10 ...................................................................................................11 7.7 Differential AC output parameters ................................................................................................11 7.6 Differential input AC logic Level 8.0 ODT DC electrical characteristics ............................................................................................11 9.0 OCD default characteristics ......................................................................................................12 10.0 IDD Specification Parameters and Test Conditions .............................................................13 11.0 DDR2 SDRAM IDD Spec ..........................................................................................................15 12.0 Input/Output capacitance ........................................................................................................16 13.0 Electrical Characteristics & AC Timing for DDR2-1066/800/667 .........................................16 13.1 Refresh Parameters by Device Density ........................................................................................16 13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin .............................................16 13.3 Timing Parameters by Speed Grade ............................................................................................17 14.0 General notes, which may apply for all AC parameters .......................................................19 15.0 Specific Notes for dedicated AC parameters ........................................................................21 3 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 1.0 Ordering Information Org. DDR2-1066 7-7-7 DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 Package 32Mx16 K4T51163QI-HC(L)F8 K4T51163QI-HC(L)E7 K4T51163QI-HC(L)F7 K4T51163QI-HC(L)E6 84 FBGA Note : 1. Speed bin is in order of CL-tRCD-tRP 2. "H" of Part number(12th digit) stands for Lead-Free, Halogen-Free, and RoHS compliant products. 2.0 Key Features Speed DDR2-1066 7-7-7 DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 Units CAS Latency 7 5 6 5 tCK tRCD(min) 13.125 12.5 15 15 ns tRP(min) 13.125 12.5 15 15 ns tRC(min) 58.125 57.5 60 60 ns * On Die Termination The 512Mb DDR2 SDRAM is organized as a 8Mbit x16 I/Os 4banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 1066Mb/sec/pin (DDR21066) for general applications. The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination. All of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the crosspoint of differential clocks (CK rising and CK falling). All I/Os are synchronized with a pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion. The address bus is used to convey row, column, and bank address information in a RAS/ CAS multiplexing style. For example, 512Mb(x16) device receive 13/10/2 addressing. The 512Mb DDR2 device operates with a single 1.8V 0.1V power supply and 1.8V 0.1V VDDQ. * Special Function Support -50ohm ODT -High Temperature Self-Refresh rate enable Note : The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation. * JEDEC standard VDD = 1.8V 0.1V Power Supply * VDDQ = 1.8V 0.1V * 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/ pin and 533MHz fCK for 1066Mb/sec/pin * 4 Banks * Posted CAS * Programmable CAS Latency: 3, 4, 5, 6 * Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5 * Write Latency(WL) = Read Latency(RL) -1 * Burst Length: 4 , 8(Interleave/Nibble sequential) * Programmable Sequential / Interleave Burst Mode * Bi-directional Differential Data-Strobe (Single-ended datastrobe is an optional feature) * Off-Chip Driver(OCD) Impedance Adjustment The 512Mb DDR2 device is available in 84ball FBGAs(x16) * Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < TCASE < 95 C * All of products are Lead-Free, Halogen-Free, and RoHS compliant Note : This data sheet is an abstract of full DDR2 specification and does not cover the common features which are described in "Samsung's DDR2 SDRAM Device Operation & Timing Diagram"] 4 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 3.0 Package pinout/Mechanical Dimension & Addressing 3.1 x16 Package Pinout (Top view) : 84ball FGGA Package 1 2 3 7 8 9 VDD NC VSS A VSSQ UDQS VDDQ DQ14 VSSQ UDM B UDQS VSSQ DQ15 VDDQ DQ9 VDDQ C VDDQ DQ8 VDDQ DQ12 VSSQ DQ11 D DQ10 VSSQ DQ13 VDD NC VSS E VSSQ LDQS VDDQ DQ6 VSSQ LDM F LDQS VSSQ DQ7 VDDQ DQ1 VDDQ G VDDQ DQ0 VDDQ DQ4 VSSQ DQ3 H DQ2 VSSQ DQ5 VDDL VREF VSS J VSSDL CK VDD CKE WE K RAS CK ODT BA0 BA1 L CAS CS A10/AP A1 M A2 A0 A3 A5 N A6 A4 A7 A9 P A11 A8 A12 NC R NC NC NC VSS VDD VDD VSS Note : 1. VDDL and VSSDL are power and ground for the DLL. 2. In case of only 8 DQs out of 16 DQs are used, LDQS, LDQSB and DQ0~7 must be used. 1 Ball Locations (x16) A B C : Populated Ball + : Depopulated Ball D E F Top View (See the balls through the package) G H J K + L M + N P R 5 of 44 + 2 3 4 5 6 + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + 7 8 9 + + + Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 3.2 FBGA Package Dimension (x16) Units : Millimeters 7.50 0.10 A 0.80 x 8 = 6.40 3.20 0.80 9 (Datum A) 8 7 # A1 INDEX MARK 1.60 6 5 4 B 3 2 1 A B C 0.80 (Datum B) D 0.80 x 14 = 11.20 F G H 0.80 J K 5.60 L 12.50 0.10 E M N P R (0.95) 0.2 M A B MOLDING AREA (1.90) Bottom 0.10MAX 84-0.45 Solder ball (Post reflow 0.50 0.05) 7.50 0.10 12.50 0.10 #A1 0.35 0.05 Top 6 of 44 1.10 0.10 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 4.0 Input/Output Functional Description Symbol Type Function Input Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK (both directions of crossing). CKE Input Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and output drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or Active Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry. CKE is asynchronous for self refresh exit. After VREF has become stable during the power on and initialization swquence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and exit, VREF must be maintained to this input. CKE must be maintained high throughout read and write accesses. Input buffers, excluding CK, CK, ODT and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during self refresh. CS Input Chip Select: All commands are masked when CS is registered HIGH. CS provides for external Rank selection on systems with multiple Ranks. CS is considered part of the command code. ODT Input On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When enabled, ODT is only applied to each DQ, DQS, DQS, RDQS, RDQS, and DM signal for x4/x8 configurations. For x16 configuration, ODT is applied to each DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal. The ODT pin will be ignored if the Extended Mode Register Set(EMRS) is programmed to disable ODT. RAS, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered. DM (UDM), (LDM) Input Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coincident with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS loading. For x8 device, the function of DM or RDQS/RDQS is enabled by EMRS command. BA0 - BA1 Input Bank Address Inputs: BA0, BA1 and BA2 define to which bank an Active, Read, Write or Precharge command is being applied. Bank address also determines if the mode register or extended mode register is to be accessed during a MRS or EMRS cycle. Input Address Inputs: Provided the row address for Active commands and the column address and Auto Precharge bit for Read/Write commands to select one location out of the memory array in the respective bank. A10 is sampled during a Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be precharged, the bank is selected by BA0, BA1 and BA2. The address inputs also provide the opcode during Mode Register Set commands. CK, CK A0 - A13 DQ Input/Output Data Input/ Output: Bi-directional data bus. Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in write data. For the x16, LDQS corresponds to the data on DQ0-DQ7; UDQS corresponds to the data on DQ8-DQ15. For the x8, an RDQS option using DM pin can be enabled via the EMRS(1) to simplify read timing. The data strobes DQS, LDQS, UDQS, and RDQS may be used in single ended mode or paired with optional complementary signals DQS, LDQS, UDQS, and RDQS to provide differential pair signaling to the system during both reads and writes. A control bit at EMRS(1)[A10] enables or disables all complementary data strobe signals. DQS, (DQS) (LDQS), (LDQS) Input/Output (UDQS), (UDQS) (RDQS), (RDQS) In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1) x16 LDQS/LDQS and UDQS/UDQS "single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1) x16 LDQS and UDQS NC No Connect : No internal electrical connection is present. VDD/VDDQ Supply Power Supply : 1.8V +/- 0.1V, DQ Power Supply : 1.8V +/- 0.1V VSS/VSSQ Supply Ground, DQ Ground VDDL Supply DLL Power Supply : 1.8V +/- 0.1V VSSDL Supply DLL Ground VREF Supply Reference voltage 7 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 5.0 DDR3 SDRAM Addressing 512Mb Configuration 128Mb x4 64Mb x 8 32Mb x16 # of Banks 4 4 4 BA0,BA1 Bank Address BA0,BA1 BA0,BA1 Auto precharge A10/AP A10/AP A10/AP Row Address A0 ~ A13 A0 ~ A13 A0 ~ A12 Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A9 * Reference information: The following tables are address mapping information for other densities. 256Mb Configuration 64Mb x4 32Mb x 8 16Mb x16 # of Banks 4 4 4 Bank Address BA0,BA1 BA0,BA1 BA0,BA1 Auto precharge A10/AP A10/AP A10/AP Row Address A0 ~ A12 A0 ~ A12 A0 ~ A12 Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A8 Configuration 256Mb x4 128Mb x 8 64Mb x16 # of Banks 8 8 8 Bank Address BA0 ~ BA2 BA0 ~ BA2 BA0 ~ BA2 Auto precharge A10/AP A10/AP A10/AP 1Gb Row Address A0 ~ A13 A0 ~ A13 A0 ~ A12 Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A9 Configuration 512Mb x4 256Mb x 8 128Mb x16 # of Banks 8 8 8 Bank Address BA0 ~ BA2 BA0 ~ BA2 BA0 ~ BA2 Auto precharge A10/AP A10/AP A10/AP Row Address A0 ~ A14 A0 ~ A14 A0 ~ A13 Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A9 2Gb 4Gb Configuration 1 Gb x4 512Mb x 8 256Mb x16 # of Banks 8 8 8 Bank Address BA0 ~ BA2 BA0 ~ BA2 BA0 ~ BA2 Auto precharge A10/AP A10/AP A10/AP Row Address A0 - A15 A0 - A15 A0 - A14 Column Address/page size A0 - A9,A11 A0 - A9 A0 - A9 8 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 6.0 Absolute Maximum Ratings Symbol Rating Units Notes Voltage on VDD pin relative to VSS - 1.0 V ~ 2.3 V V 1 VDDQ Voltage on VDDQ pin relative to VSS - 0.5 V ~ 2.3 V V 1 VDDL Voltage on VDDL pin relative to VSS - 0.5 V ~ 2.3 V V 1 Voltage on any pin relative to VSS - 0.5 V ~ 2.3 V V 1 -55 to +100 C 1, 2 VDD VIN, VOUT TSTG Parameter Storage Temperature Note : 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard. 3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ and VDDL are less than 500mV, VREF may be equal to or less than 300mV. 4. Voltage on any input or I/O may not exceed voltage on VDDQ. 7.0 AC & DC Operation Conditions 7.1 Recommended DC operating Conditions (SSTL - 1.8) Symbol Parameter Rating Units Min. Typ. Max. 1.7 1.8 1.9 V Notes VDD Supply Voltage VDDL Supply Voltage for DLL 1.7 1.8 1.9 V 4 VDDQ Supply Voltage for Output 1.7 1.8 1.9 V 4 VREF Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ mV 1,2 Termination Voltage VREF-0.04 VREF VREF+0.04 V 3 VTT Note : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to VDD. 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ. 2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC). 3. VTT of transmitting device must track VREF of receiving device. 4. AC parameters are measured with VDD, VDDQ and VDDL tied together. 9 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 7.2 Operating Temperature Condition Symbol Parameter Rating Units Notes TOPER Operating Temperature 0 to 95 C 1, 2 Note : 1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard. 2. At 85 - 95 C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self refresh mode at this temperature range, an EMRS command is required to change internal refresh rate. 7.3 Input DC Logic Level Symbol Parameter Min. Max. Units VIH(DC) DC input logic high VREF + 0.125 VDDQ + 0.3 V VIL(DC) DC input logic low - 0.3 VREF - 0.125 V Notes 7.4 Input AC Logic Level Symbol DDR2-667, DDR2-800 Parameter DDR2-1066 Min. Max. Min. Max. Units VIH (AC) AC input logic high VREF + 0.200 VDDQ + VPEAK VREF + 0.200 - V VIL (AC) AC input logic low VSSQ - VPEAK VREF - 0.200 - VREF - 0.200 V Note : 1. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak amplitude allowed for overshoot and undershoot. 7.5 AC Input Test Conditions Symbol Condition Value Units Notes VREF Input reference voltage 0.5 * VDDQ V 1 VSWING(MAX) Input signal maximum peak to peak swing 1.0 V 1 SLEW Input signal minimum slew rate 1.0 V/ns 2, 3 Note : 1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test. 2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC) max for falling edges as shown in the below figure. 3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions. VDDQ VIH(AC) min VIH(DC) min VSWING(MAX) VREF VIL(DC) max VIL(AC) max delta TF Falling Slew = delta TR VREF - VIL(AC) max delta TF Rising Slew = VSS VIH(AC) min - VREF delta TR < AC Input Test Signal Waveform > 10 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 7.6 Differential input AC logic Level Symbol Parameter Min. Max. Units Notes VID(AC) AC differential input voltage 0.5 VDDQ V 1 VIX(AC) AC differential cross point voltage 0.5 * VDDQ - 0.175 0.5 * VDDQ + 0.175 V 2 Note : 1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to VIH (AC) - VIL(AC). 2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ . VIX(AC) indicates the voltage at which differential input signals must cross. 3. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak amplitude allowed for overshoot and undershoot. VDDQ VTR Crossing point VID VIX or VOX VCP VSSQ < Differential signal levels > 7.7 Differential AC output parameters Symbol VOX(AC) Parameter AC differential cross point voltage Min. Max. Units Note 0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125 V 1 Note : 1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ . VOX(AC) indicates the voltage at which differential output signals must cross. 8.0 ODT DC electrical characteristics PARAMETER/CONDITION SYMBOL MIN NOM MAX UNITS NOTES Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm Rtt1(eff) 60 75 90 ohm 1 Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm Rtt2(eff) 120 150 180 ohm 1 50 60 ohm 1 +6 % 1 Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm Rtt3(eff) 40 Deviation of VM with respect to VDDQ/2 delta VM -6 Note : 1. Test condition for Rtt measurements Measurement Definition for Rtt(eff) : Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac)) and I( VIL (ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18 Rtt(eff) = delta VM = VIH (ac) - VIL (ac) I(VIH (ac)) - I(VIL (ac)) 2 x Vm VDDQ -1 x 100% Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load. 11 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 9.0 OCD default characteristics Description Parameter Min Nom Max 18ohm at nominal condition See full strength default driver characteristics on device operation specification Output impedance Unit Notes ohms 1,2 Output impedance step size for OCD calibration 0 1.5 ohms 6 Pull-up and pull-down mismatch 0 4 ohms 1,2,3 1.5 5 V/ns 1,4,5,6,7,8 Output slew rate Sout Note : 1. Absolute Specifications (0C TCASE +95C; VDD = +1.8V 0.1V, VDDQ = +1.8V 0.1V) 2. Impedance measurement condition for output source dc current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between VDDQ and VDDQ- 280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for values of VOUT between 0V and 280mV. 3. Mismatch is absolute value between pull-up and pull-dn, both are measured at same temperature and voltage. 4. Slew rate measured from VIL(AC) to VIH(AC). 5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaranteed by design and characterization. 6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty. Output slew rate load : VTT 25 ohms Output (VOUT) Reference Point 7. DRAM output slew rate specification applies to 667Mb/sec/pin, 800Mb/sec/pin and 1066Mb/sec/pin speed bins. 8. Timing skew due to DRAM output slew rate mis-match between DQS / DQS and associated DQs is included in tDQSQ and tQHS specification. 12 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 10.0 IDD Specification Parameters and Test Conditions (IDD values are for full operating range of Voltage and Temperature, Notes 1-5) Symbol Proposed Conditions Units IDD0 Operating one bank active-precharge current; tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD1 Operating one bank active-read-precharge current; IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD = tRCD(IDD); CKE is HIGH, CS is HIGH between valid commands; Address businputs are SWITCHING; Data pattern is same as IDD4W mA IDD2P Precharge power-down current; All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING mA IDD2Q Precharge quiet standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputsare STABLE; Data bus inputs are FLOATING mA IDD2N Precharge standby current; All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD3P Active power-down current; Fast PDN Exit MRS(12) = 0 All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus Slow PDN Exit MRS(12) = 1 inputs are STABLE; Data bus inputs are FLOATING IDD3N Active standby current; All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4W Operating burst write current; All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA IDD4R Operating burst read current; All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W mA IDD5B Burst auto refresh current; tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is HIGH between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING mA mA mA IDD6 Self refresh current; CK and CK at 0V; CKE 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING IDD7 Operating bank interleave read current; All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC = tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the following page for detailed timing conditions 13 of 44 Notes Normal mA Low Power mA mA Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI Note : 1. IDD specifications are tested after the device is properly initialized 2. Input slew rate is specified by AC Parametric Test Condition 3. IDD parameters are specified with ODT disabled. 4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11. 5. Definitions for IDD LOW is defined as VIN VIL(AC)max HIGH is defined as VIN VIH(AC)min STABLE is defined as inputs stable at a HIGH or LOW level FLOATING is defined as inputs at VREF = VDDQ/2 SWITCHING is defined as: inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control signals, and inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including masks or strobes. For purposes of IDD testing, the following parameters are utilized Parameter DDR2-1066 DDR2-800 DDR2-800 DDR2-667 7-7-7 5-5-5 6-6-6 5-5-5 Units CL(IDD) 5 5 6 5 tRCD(IDD) 12.5 12.5 15 15 tCK ns tRC(IDD) 57.5 57.5 60 60 ns ns tRRD(IDD)-x16 10 10 10 10 tCK(IDD) 2.5 2.5 2.5 3 ns tRASmin(IDD) 45 45 45 45 ns tRP(IDD) 12.5 12.5 15 15 ns tRFC(IDD) 105 105 105 105 ns Detailed IDD7 The detailed timings are shown below for IDD7. Legend: A = Active; RA = Read with Autoprecharge; D = Deselect IDD7: Operating Current: All Bank Interleave Read operation All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) and tFAW(IDD) using a burst length of 4. Control and address bus inputs are STABLE during DESELECTs. IOUT = 0mA Timing Patterns for 4 bank devices x16 -DDR2-667 5/5/5 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D -DDR2-800 6/6/6 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D -DDR2-800 5/5/5 A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D -DDR2-1066 7/7/7 A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D D D D D D D D 14 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 11.0 DDR2 SDRAM IDD Spec 32Mx16 (K4T51163QI) Symbol 1066@CL=7 800@CL=5 800@CL=6 667@CL=5 Unit CF8 CE7 CF7 CE6 IDD0 75 67 67 65 IDD1 85 80 80 75 mA IDD2P 8 8 8 8 mA mA IDD2Q 27 25 25 25 mA IDD2N 35 30 30 30 mA IDD3P-F 31 28 28 28 mA IDD3P-S 10 10 10 10 mA IDD3N 45 40 40 38 mA IDD4W 110 95 95 85 mA IDD4R 160 130 130 115 mA IDD5 90 90 90 90 mA IDD6 8 8 8 8 mA IDD7 205 200 200 185 mA 15 of 44 Notes Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 12.0 Input/Output capacitance Parameter DDR2-667 Symbol Input capacitance, CK and CK Input capacitance delta, CK and CK Input capacitance, all other input-only pins Input capacitance delta, all other input-only pins Input/output capacitance, DQ, DM, DQS, DQS Input/output capacitance delta, DQ, DM, DQS, DQS Min DDR2-800 Max Min DDR2-1066 Max Min Max Units CCK 1.0 2.0 1.0 2.0 1.0 2.0 pF CDCK x 0.25 x 0.25 x 0.25 pF CI 1.0 2.0 1.0 1.75 1.0 1.75 pF CDI x 0.25 x 0.25 x 0.25 pF CIO 2.5 3.5 2.5 3.5 2.5 3.5 pF CDIO x 0.5 x 0.5 x 0.5 pF 13.0 Electrical Characteristics & AC Timing for DDR2-1066/800/667 (0 C < TOPER < 95 C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V) 13.1 Refresh Parameters by Device Density Parameter Symbol Refresh to active/Refresh command time tRFC Average periodic refresh interval tREFI 256Mb 512Mb 1Gb 2Gb 4Gb Units 75 105 127.5 195 327.5 ns 0 C TCASE 85C 7.8 7.8 7.8 7.8 7.8 s 85 C < TCASE 95C 3.9 3.9 3.9 3.9 3.9 s 13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin Speed DDR2-1066(F8) Bin (CL - tRCD - tRP) DDR2-800(E7) 7-7-7 DDR2-800(F7) 5-5-5 Parameter min max tCK, CL=3 3.75 tCK, CL=4 3 tCK, CL=5 tCK, CL=6 tRCD tRP tRC tRAS DDR2-667(E6) 6-6-6 min max 7.5 5 8 - 7.5 3.75 8 3.75 2.5 7.5 2.5 8 3 1.875 7.5 - - 2.5 13.125 - 12.5 - 13.125 - 12.5 - 58.125 - 57.5 - 45 70000 45 70000 16 of 44 min 5-5-5 max Units min max - 5 8 ns 8 3.75 8 ns 8 3 8 ns 8 - - ns 15 - 15 - ns 15 - 15 - ns 60 - 60 - ns 45 70000 45 70000 ns Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 13.3 Timing Parameters by Speed Grade (For information related to the entries in this table, refer to both the general notes and the specific notes following this table.) Parameter Symbol DDR2-1066 DDR2-800 DDR2-667 min max min max min max Units Notes 40 DQ output access time from CK/CK tAC - 350 350 -400 400 -450 450 ps DQS output access time from CK/CK tDQSCK - 300 300 -350 350 -400 400 ps 40 Average clock HIGH pulse width tCH(avg) 0.48 0.52 0.48 0.52 0.48 0.52 tCK(avg) 35,36 Average clock LOW pulse width tCL(avg) 0.48 0.52 0.48 0.52 0.48 0.52 tCK(avg) 35,36 min(tCL,tC H) x Min(tCL(ab s), tCH(abs)) x Min(tCL(ab s), tCH(abs)) x ps 37 1875 7500 2500 8000 3000 8000 ps 35,36 CK half pulse period tHP Average clock period tCK(avg) DQ and DM input hold time tDH(base) 75 x 125 x 175 x ps 6,7,8,21 ,28,31 DQ and DM input setup time tDS(base) 0 x 50 x 100 x ps 6,7,8,20 ,28,31 Control & Address input pulse width for each input tIPW 0.6 x 0.6 x 0.6 x tCK(avg) DQ and DM input pulse width for each input tDIPW 0.35 x 0.35 x 0.35 x tCK(avg) Data-out high-impedance time from CK/CK tHZ x tAC max x tAC(max) x tAC(max) ps 18,40 DQS/DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC(min) tAC(max) tAC(min) DQ low-impedance time from CK/CK tLZ(DQ) 2* tAC min tAC max 2* tAC(min) DQS-DQ skew for DQS and associated DQ signals tDQSQ x 175 x 200 DQ hold skew factor tQHS x 250 x DQ/DQS output hold time from DQS tQH tHP - tQHS x DQS latching rising transitions to associated clock edges tDQSS - 0.25 0.25 DQS input HIGH pulse width tDQSH 0.35 DQS input LOW pulse width tDQSL DQS falling edge to CK setup time DQS falling edge hold time from CK tAC(max) ps 18,40 tAC(max) ps 18,40 x 240 ps 13 300 x 340 ps 38 tHP - tQHS x tHP - tQHS x ps 39 - 0.25 0.25 -0.25 0.25 tCK(avg) 30 x 0.35 x 0.35 x tCK(avg) 0.35 x 0.35 x 0.35 x tCK(avg) tDSS 0.2 x 0.2 x 0.2 x tCK(avg) 30 tDSH 0.2 x 0.2 x 0.2 x tCK(avg) 30 Mode register set command cycle time tMRD 2 x 2 x 2 x nCK MRS command to ODT update delay tMOD 0 12 0 12 0 12 ns 32 Write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK(avg) 10 Write preamble tWPRE 0.35 x 0.35 x 0.35 x tCK(avg) Address and control input hold time tIH(base) 200 x 250 x 275 x ps 5,7,9,23 ,29 Address and control input setup time tIS(base) 125 x 175 x 200 x ps 5,7,9,22 ,29 Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK(avg) 19,41 Read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK(avg) 19,42 Activate to activate command period for 1KB page size products tRRD 7.5 x 7.5 x 7.5 x ns 4,32 Activate to activate command period for 2KB page size products tRRD 10 x 10 x 10 x ns 4,32 17 of 44 tAC(max) 2* tAC(min) Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI Parameter Symbol Four Activate Window for 1KB page size products Four Activate Window for 2KB page size products CAS to CAS command delay Write recovery time DDR2-1066 DDR2-800 DDR2-667 Units Notes x ns 32 x ns 32 2 x nCK 15 x ns WR + tnRP x nCK 33 7.5 x ns 24,32 x 7.5 x ns 3,32 x tRFC + 10 x ns 32 200 x 200 x nCK x 2 x 2 x nCK 3 x 2 x 2 x nCK 1 10 - AL x 8 - AL x 7 - AL x nCK 1,2 min max min max min max tFAW 35 x 35 x 37.5 tFAW 45 x 45 x 50 tCCD 2 x 2 x tWR 15 x 15 x Auto precharge write recovery + precharge time tDAL WR+tRP x WR + tnRP x Internal write to read command delay tWTR 7.5 x 7.5 x Internal read to precharge command delay tRTP 7.5 x 7.5 Exit self refresh to a non-read command tXSNR tRFC + 10 x tRFC + 10 Exit self refresh to a read command tXSRD 200 x Exit precharge power down to any command tXP 3 Exit active power down to read command tXARD Exit active power down to read command (slow exit, lower power) tXARDS 32 CKE minimum pulse width (HIGH and LOW pulse width) tCKE 3 x 3 x 3 x nCK 27 ODT turn-on delay tAOND 2 2 2 2 2 2 nCK 16 ODT turn-on tAON tAC(min) tAC(max) + 2.575 tAC(min) tAC(max)+ 0.7 tAC(min) tAC(max)+ 0.7 ns 6,16,40 ODT turn-on (Power-Down mode) tAONPD 3*tCK + 2*tCK(avg) 2*tCK(avg) tAC(min)+2 tAC(max)+ tAC(min)+2 +tAC(max) tAC(min)+2 +tAC(max) 1 +1 +1 ns ODT turn-off delay tAOFD ODT turn-off tAOF ODT turn-off (Power-Down mode) tAOFPD 2.5 2.5 tAC(min) tAC(max)+ 0.6 2.5 2.5 tAC(min) tAC(max)+ 0.6 2.5 2.5 nCK 17,45 tAC(min) tAC(max)+ 0.6 ns 17,43,4 5 2.5*tCK + 2.5*tCK(av 2.5*tCK(av tAC(min)+2 tAC(max)+ tAC(min)+2 g)+tAC(ma tAC(min)+2 g)+tAC(ma 1 x)+1 x)+1 ns ODT to power down entry latency tANPD 4 x 3 x 3 x nCK ODT power down exit latency tAXPD 11 x 8 x 8 x nCK OCD drive mode output delay tOIT 0 12 0 12 0 12 ns 32 tIS+tCK +tIH x tIS+tCK(av g) +tIH x tIS+tCK(av g) +tIH x ns 15 Minimum time clocks remains ON after CKE asynchronously tDelay drops LOW 18 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 14.0 General notes, which may apply for all AC parameters 1. DDR2 SDRAM AC timing reference load Figure 1 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise repre sentation of the typical system environment or a depiction of the actual load presented by a production tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester electronics). VDDQ DUT DQ DQS DQS Output RDQS RDQS VTT = VDDQ/2 25 Timing reference point Figure 1. AC Timing Reference Load The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference voltage level for differential signals is the crosspoint of the true (e.g. DQS) and the complement (e.g. DQS) signal. 2. Slew Rate Measurement Levels a) Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for single ended signals. For differential signals (e.g. DQS - DQS) output slew rate is measured between DQS - DQS = - 500 mV and DQS - DQS = + 500 mV. Output slew rate is guaranteed by design, but is not necessarily tested on each device. b) Input slew rate for single ended signals is measured from Vref(dc) to VIH(ac),min for rising edges and from Vref(dc) to VIL(ac),max for falling edges. For differential signals (e.g. CK - CK) slew rate for rising edges is measured from CK - CK = - 250 mV to CK - CK = + 500 mV (+ 250 mV to - 500 mV for falling edges). c) VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK, or between DQS and DQS for differential strobe. 3. DDR2 SDRAM output slew rate test load Output slew rate is characterized under the test conditions as shown in Figure 2. VDDQ DUT DQ DQS, DQS RDQS, RDQS Output VTT = VDDQ/2 Test point 25 Figure 2. Slew Rate Test Load 19 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 4. Differential data strobe DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the EMRS "Enable DQS" mode bit; timing advantages of differential mode are realized in system design. The method by which the DDR2 SDRAM pin timings are measured is mode dependent. In single ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at VREF. In differential mode, these timing relationships are measured relative to the crosspoint of DQS and its complement, DQS. This distinction in timing methods is guaranteed by design and characterization. Note that when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied externally to VSS through a 20 to 10 k resistor to insure proper operation. tDQSH DQS DQS/ DQS tDQSL DQS tWPRE tWPST VIH(dc) VIH(ac) DQ D D tDS DM D D VIL(dc) VIL(ac) DMin tDH tDS VIH(ac) tDH VIH(dc) DMin DMin DMin VIL(ac) VIL(dc) Figure 3. Data Input (Write) Timing tCH tCL CK CK/CK CK DQS DQS/DQS DQS tRPRE tRPST DQ Q tDQSQmax Q Q Q tDQSQmax tQH tQH Figure 4. Data Output (Read) Timing 5. AC timings are for linear signal transitions. See Specific Notes on derating for other signal transitions. 6. All voltages are referenced to VSS. 7. These parameters guarantee device behavior, but they are not necessarily tested on each device. They may be guaranteed by device design or tester correlation. 8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 20 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 15.0 Specific Notes for dedicated AC parameters 1. User can choose which active power down exit timing to use via MRS (bit 12). tXARD is expected to be used for fast active power down exit timing. tXARDS is expected to be used for slow active power down exit timing. 2. AL = Additive Latency. 3. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min) have been satisfied. 4. A minimum of two clocks (2 x tCK or 2 x nCK) is required irrespective of operating frequency. 5. Timings are specified with command/address input slew rate of 1.0 V/ns. 6. Timings are specified with DQs, DM, and DQS's (DQS/RDQS in single ended mode) input slew rate of 1.0V/ns. 7. Timings are specified with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns in differential strobe mode and a slew rate of 1.0 V/ns in single ended mode. 8. Data setup and hold time derating. [ Table 1 ] DDR2-400/533 tDS/tDH derating with differential data strobe tDS, tDH Derating Values of DDR2-400, DDR2-533 (ALL units in `ps', the note applies to entire Table) DQS,DQS Differential Slew Rate 4.0 V/ns DQ Siew rate V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns 0.8V/ns tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH 2.0 125 45 125 45 125 45 - - - - - - - - - - - - 1.5 83 21 83 21 83 21 95 33 - - - - - - - - - - 1.0 0 0 0 0 0 0 12 12 24 24 - - - - - - - - 0.9 - - -11 -14 -11 -14 1 -2 13 10 25 22 - - - - - - 0.8 - - - - -25 -31 -13 -19 -1 -7 11 5 23 17 - - - - 0.7 - - - - - - -31 -42 -19 -30 -7 -18 5 -6 17 6 - - 0.6 - - - - - - - - -43 -59 -31 -47 -19 -35 -7 -23 5 -11 0.5 - - - - - - - - - - -74 -89 -62 -77 -50 -65 -38 -53 0.4 - - - - - - - - - - - - -127 -140 -115 -128 -103 -116 [ Table 2 ] DDR2-667/800/1066 tDS/tDH derating with differential data strobe tDS, tDH Derating Values for DDR2-667, DDR2-800, DDR2-1066 (ALL units in `ps', the note applies to entire Table) DQS,DQS Differential Slew Rate 4.0 V/ns DQ Slew rate V/ns 3.0 V/ns 2.0 V/ns tDH tDS 1.8 V/ns 1.6 V/ns tDS tDH tDS tDH tDS tDH tDS 2.0 100 45 100 45 100 45 - - - 1.5 67 21 67 21 67 21 79 33 1.0 0 0 0 0 0 0 12 12 0.9 - - -5 -14 -5 -14 7 -2 19 0.8 - - - - -13 -31 -1 -19 11 0.7 - - - - - - -10 -42 0.6 - - - - - - - - 0.5 - - - - - - - - 0.4 - - - - - - - - 21 of 44 1.4V/ns tDH tDS 1.2V/ns 1.0V/ns 0.8V/ns tDH tDS tDH tDS - - - - - - tDH tDS - - tDH - - - - - - - - - - - 24 24 - - - - - - - - 10 31 22 - - - - - - -7 23 5 35 17 - - - - 2 -30 14 -18 26 -6 38 6 - - -10 -59 2 -47 14 -35 26 -23 38 -11 - - -24 -89 -12 -77 0 -65 12 -53 - - - - -52 -140 -40 -128 -28 -116 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI [ Table 3 ] DDR2-400/533 tDS1/tDH1 derating with single ended data strobe tDS1, tDH1 Derating Values for DDR2-400, DDR2-533(All units in `ps'; the note applies to the entire table) DQS Single-ended Slew Rate 2.0 V/ns DQ Slew rate V/ns 1.5 V/ns 1.0 V/ns 0.9 V/ns tDS 1 tDH 1 0.8 V/ns tDS 1 tDH 1 0.7 V/ns tDS 1 tDH 1 0.6 V/ns tDS 1 tDH 1 0.5 V/ns tDS 1 tDH 1 0.4 V/ns tDS 1 tDH 1 tDS 1 tDH 1 tDS 1 tDH 1 tDS 1 tDH 1 2.0 188 188 167 146 125 63 - - - - - - - - - - - - 1.5 146 167 125 125 83 42 81 43 - - - - - - - - - - 1.0 63 125 42 83 0 0 -2 1 -7 -13 - - - - - - - - 0.9 - - 31 69 -11 -14 -13 -13 -18 -27 -29 -45 - - - - - - 0.8 - - - - -25 -31 -27 -30 -32 -44 -43 -62 -60 -86 - - - - 0.7 - - - - - - -45 -53 -50 -67 -61 -85 -78 -109 -108 -152 - - 0.6 - - - - - - - - -74 -96 -85 -114 -102 -138 -138 -181 -183 -246 0.5 - - - - - - - - - - -128 -156 -145 -180 -175 -223 -226 -288 0.4 - - - - - - - - - - - - -210 -243 -240 -286 -291 -351 For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and tDH(base) value to the tDS and tDH derating value respectively. Example: tDS (total setup time) =tDS(base) +tDS. Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of Vih(ac)min. Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of Vil(ac)max. If the actual signal is always earlier than the nominal slew rate line between shaded 'VREF(dc) to ac region', use nominal slew rate for derating value (See Figure 5 for differential data strobe and Figure 6 for single-ended data strobe.) If the actual signal is later than the nominal slew rate line anywhere between shaded 'VREF(dc) to ac region', the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value (see Figure 7 for differential data strobe and Figure 8 for single-ended data strobe) Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of Vil(dc)max and the first crossing of VREF(dc). Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of Vih(dc)min and the first crossing of VREF(dc). If the actual signal is always later than the nominal slew rate line between shaded 'dc level to VREF(dc) region', use nominal slew rate for derating value (see Figure 9 for differential data strobe and Figure 10 for single-ended data strobe) If the actual signal is earlier than the nominal slew rate line anywhere between shaded 'dc to VREF(dc) region', the slew rate of a tangent line to the actual signal from the dc level to VREF(dc) level is used for derating value (see Figure 11 for differential data strobe and Figure 12 for single-ended data strobe) Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac). For slew rates in between the values listed in Table 2 the derating values may obtained by linear interpolation. These values are typically not subject to production test. They are verified by design and characterization. 22 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI DQS DQS tDH tDS tDS tDH VDDQ VIH(ac) min VREF to ac region VIH(dc) min nominal slew rate VREF(dc) nominal slew rate VIL(dc) max VREF to ac region VIL(ac) max tVAC VSS TF Setup Slew Rate= Falling Signal TR VREF(dc) - Vil(ac)max TF Setup Slew Rate Vih(ac)min - VREF(dc) = Rising Signal TR Figure 5. Illustration of nominal slew rate for tDS (differential DQS,DQS) 23 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI DQS Note1 VDDQ VIH(ac) min VIH(dc) min VREF(dc) VIL(dc) max VIL(ac) max VSS tDS tDS tDH tDH VDDQ VIH(ac) min VREF to ac region VIH(dc) min nominal slew rate VREF(dc) nominal slew rate VIL(dc) max VREF to ac region VIL(ac) max VSS TF TR Setup Slew Rate= VREF(dc) - Vil(ac)max Falling Signal TF Setup Slew Rate Vih(ac)min - VREF(dc) = Rising Signal TR Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min. Figure 6. Illustration of nominal slew rate for tDS (single-ended DQS) 24 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI DQS DQS tDH tDS VDDQ tDS tDH nominal line VIH(ac) min VREF to ac region VIH(dc) min tangent line VREF(dc) tangent line VIL(dc) max VREF to ac region VIL(ac) max nominal line TR VSS TF Setup Slew Rate tangent line[Vih(ac)min - VREF(dc)] Rising Signal= TR Setup Slew Rate tangent line[VREF(dc) - Vil(ac)max] Falling Signal = TF Figure 7. Illustration of tangent line for tDS (differential DQS, DQS) 25 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI DQS Note1 VDDQ VIH(ac) min VIH(dc) min VREF(dc) VIL(dc) max VIL(ac) max VSS tDH tDS VDDQ tDS tDH nominal line VIH(ac) min VREF to ac region VIH(dc) min tangent line VREF(dc) tangent line VIL(dc) max VREF to ac region VIL(ac) max nominal line TR VSS TF Setup Slew Rate tangent line[Vih(ac)min - VREF(dc)] = Rising Signal TR Setup Slew Rate tangent line[VREF(dc) - Vil(ac)max] Falling Signal = TF Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min. Figure 8. Illustration of tangent line for tDS (single-ended DQS) 26 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI DQS DQS tDH tDS VDDQ tDS tDH VIH(ac) min VIH(dc) min dc to VREF region nominal slew rate VREF(dc) dc to VREF region nominal slew rate VIL(dc) max VIL(ac) max VSS TR Hold Slew Rate VREF(dc) - Vil(dc)max Rising Signal = TR TF Hold Slew Rate Vih(dc)min - VREF(dc) = Falling Signal TF Figure 9. Illustration of nominal slew rate for tDH (differential DQS, DQS) 27 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI VDDQ VIH(ac) min VIH(dc) min VREF(dc) VIL(dc) max VIL(ac) max VSS DQS Note1 tDH tDS VDDQ tDS tDH VIH(ac) min VIH(dc) min dc to VREF region nominal slew rate VREF(dc) dc to VREF region nominal slew rate VIL(dc) max VIL(ac) max VSS TR Hold Slew Rate VREF(dc) - Vil(dc)max Rising Signal = TR TF Hold Slew Rate Vih(dc)min - VREF(dc) Falling Signal = TF Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min. Figure 10. Illustration of nominal slew rate for tDH (single-ended DQS) 28 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI DQS DQS tDH tDS tDS tDH VDDQ VIH(ac) min nominal line VIH(dc) min dc to VREF region tangent line VREF(dc) dc to VREF region tangent line nominal line VIL(dc) max VIL(ac) max VSS TR TF Hold Slew Rate tangent line [ VREF(dc) - Vil(dc)max ] Rising Signal = TR Hold Slew Rate tangent line [ Vih(dc)min - VREF(dc) ] Falling Signal = TF Figure 11. Illustration of tangent line for tDH (differential DQS, DQS) 29 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI DQS Note1 VDDQ VIH(ac) min VIH(dc) min VREF(dc) VIL(dc) max VIL(ac) max VSS tDS VDDQ tDH tDS tDH VIH(ac) min nominal line VIH(dc) min dc to VREF region tangent line VREF(dc) tangent line dc to VREF region nominal line VIL(dc) max VIL(ac) max VSS Hold Slew Rate Rising Signal = TR tangent line [ VREF(dc) - Vil(dc)max ] TR TF Hold Slew Rate tangent line [ Vih(dc)min - VREF(dc) ] Falling Signal = TF Note : DQS signal must be monotonic between Vil(dc)max and Vih(dc)min. Figure 12. Illustration of tangent line for tDH (single-ended DQS) 30 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 9. tIS and tIH (input setup and hold) derating [ Table 4 ] Derating values for DDR2-400, DDR2-533 tIS, tIH Derating Values for DDR2-400, DDR2-533 CK, CK Differential Slew Rate 2.0 V/ns Command/ Address Slew rate(V/ns) 1.5 V/ns 1.0 V/ns Units Notes +154 ps 1 +239 +149 ps 1 +227 +143 ps 1 +210 +135 ps 1 +75 +185 +105 ps 1 +51 +143 +81 ps 1 +60 +60 ps 1 tIS tIH tIS tIH tIS tIH 4.0 +187 +94 +217 +124 +247 3.5 +179 +89 +209 +119 3.0 +167 +83 +197 +113 2.5 +150 +75 +180 +105 2.0 +125 +45 +155 1.5 +83 +21 +113 1.0 0 0 +30 +30 0.9 -11 -14 +19 +16 +49 +46 ps 1 0.8 -25 -31 +5 -1 +35 +29 ps 1 0.7 -43 -54 -13 -24 +17 +6 ps 1 0.6 -67 -83 -37 -53 -7 -23 ps 1 0.5 -110 -125 -80 -95 -50 -65 ps 1 0.4 -175 -188 -145 -158 -115 -128 ps 1 0.3 -285 -292 -255 -262 -225 -232 ps 1 0.25 -350 -375 -320 -345 -290 -315 ps 1 0.2 -525 -500 -495 -470 -465 -440 ps 1 0.15 -800 -708 -770 -678 -740 -648 ps 1 0.1 -1450 -1125 -1420 -1095 -1390 -1065 ps 1 31 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI [ Table 5 ] Derating values for DDR2-667, DDR2-800, DDR2-1066 tIS and tIH Derating Values for DDR2-667, DDR2-800, DDR2-1066 CK, CK Differential Slew Rate 2.0 V/ns Command/ Address Slew rate(V/ns) 1.5 V/ns 1.0 V/ns Units Notes +154 ps 1 +149 ps 1 +193 +143 ps 1 +180 +135 ps 1 +75 +160 +105 ps 1 +51 +127 +81 ps 1 tIS tIH tIS tIH tIS tIH 4.0 +150 +94 +180 +124 +210 3.5 +143 +89 +173 +119 +203 3.0 +133 +83 +163 +113 2.5 +120 +75 +150 +105 2.0 +100 +45 +130 1.5 +67 +21 +97 1.0 0 0 +30 +30 +60 +60 ps 1 0.9 -5 -14 +25 +16 +55 +46 ps 1 0.8 -13 -31 +17 -1 +47 +29 ps 1 0.7 -22 -54 +8 -24 +38 +6 ps 1 0.6 -34 -83 -4 -53 +26 -23 ps 1 0.5 -60 -125 -30 -95 0 -65 ps 1 0.4 -100 -188 -70 -158 -40 -128 ps 1 0.3 -168 -292 -138 -262 -108 -232 ps 1 0.25 -200 -375 -170 -345 -140 -315 ps 1 0.2 -325 -500 -295 -470 -265 -440 ps 1 0.15 -517 -708 -487 -678 -457 -648 ps 1 0.1 -1000 -1125 -970 -1095 -940 -1065 ps 1 For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS(base) and tIH(base) value to the tIS and tIH derating value respectively. Example: tIS (total setup time) = tIS(base) + tIS Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of Vih(ac)min. Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(dc) and the first crossing of Vil(ac)max. If the actual signal is always earlier than the nominal slew rate line between shaded 'VREF(dc) to ac region', use nominal slew rate for derating value (see Figure 13). If the actual signal is later than the nominal slew rate line anywhere between shaded 'VREF(dc) to ac region', the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value (see Figure 14). Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of Vil(dc)max and the first crossing of VREF(dc). Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of Vih(dc)min and the first crossing of VREF(dc). If the actual signal is always later than the nominal slewrate line between shaded 'dc to VREF(dc) region', use nominal slew rate for derating value (see Figure 15). If the actual signal is earlier than the nominal slew rate line anywhere between shaded 'dc to VREF(dc) region', the slew rate of a tangent line to the actual signal from the dc level to VREF(dc) level is used for derating value (see Figure 16). Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(ac) at the time of the rising clock transition) a valid input signal is still required to complete the transition and reach VIH/IL(ac). For slew rates in between the values listed in Table 5 the derating values may obtained by linear interpolation. These values are typically not subject to production test. They are verified by design and characterization. 32 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI CK CK tIH tIS tIS tIH VDDQ VIH(ac) min VREF to ac region VIH(dc) min nominal slew rate VREF(dc) nominal slew rate VIL(dc) max VREF to ac region VIL(ac) max VSS TF TR Setup Slew Rate VREF(dc) - Vil(ac)max = Falling Signal TF Setup Slew Rate Vih(ac)min - VREF(dc) = Rising Signal TR Figure 13. Illustration of nominal slew rate for tIS 33 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI CK CK tIH tIS VDDQ tIS tIH nominal line VIH(ac) min VREF to ac region VIH(dc) min tangent line VREF(dc) tangent line VIL(dc) max VREF to ac region VIL(ac) max nominal line TR VSS TF Setup Slew Rate= Rising Signal tangent line[Vih(ac)min - VREF(dc)] TR Setup Slew Rate tangent line[VREF(dc) - Vil(ac)max] = Falling Signal TF Figure 14. Illustration of tangent line for tIS 34 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI CK CK tIS tIH tIS tIH VDDQ VIH(AC)min VREF to ac region VIH(DC)min nominal slew rate VREF(DC) nominal slew rate VIL(DC)max VREF to ac region VIL(AC)max VSS TF TR Setup Slew Rate VREF(DC) - VIL(AC)max = Falling Signal TF Setup Slew Rate VIH(AC)min - VREF(DC) = Rising Signal TR Figure 15. IIIustration of nominal slew rate for tIS 35 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI CK CK tIH tIS tIS tIH VDDQ nominal line VIH(AC)min VREF to ac region VIH(DC)min tangent line VREF(DC) tangent line VIL(DC)max VREF to ac region VIL(AC)max nominal line TR VSS TF Setup Slew Rate= Rising Signal tangent line[VIH(AC)min - VREF(DC)] TR Setup Slew Rate tangent line[VREF(DC) - VIL(AC)max] = Falling Signal TF Figure 16. IIIustration of tangent line for tIS 36 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI CK CK tIH tIS tIS tIH VDDQ VIH(AC)min VIH(DC)min dc to VREF region nominal slew rate VREF(DC) dc to VREF region nominal slew rate VIL(DC)max VIL(AC)max VSS TR Hold Slew Rate VREF(DC) - VIL(DC)max Rising Signal = TR TF Hold Slew Rate VIH(DC)min - VREF(DC) = Falling Signal TF Figure 17. IIIustration of nominal slew rate for tIH 37 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI CK CK tIH tIS tIS tIH VDDQ VIH(AC)min nominal line VIH(DC)min dc to VREF region tangent line VREF(DC) VIL(DC)max dc to VREF region tangent line nominal line VIL(AC)max VSS TR TF Hold Slew Rate tangent line [ VREF(DC) - VIL(DC)max ] Rising Signal = TR Hold Slew Rate tangent line [ VIH(DC)min - VREF(DC)] Falling Signal = TF Figure 18. IIIustration of tangent line for tIH 38 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 10. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance (bus turnaround) will degrade accordingly. 11. MIN ( tCL, tCH) refers to the smaller of the actual clock LOW time and the actual clock HIGH time as provided to the device (i.e. this value can be greater than the minimum specification limits for tCL and tCH). For example, tCL and tCH are = 50% of the period, less the half period jitter ( tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk ( tJIT(crosstalk)) into the clock traces. 12. tQH = tHP - tQHS, where : tHP = minimum half clock period for any given cycle and is defined by clock HIGH or clock LOW (tCH, tCL). tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers. 13. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output slew rate mismatch between DQS/ DQS and associated DQ in any given cycle. 14. tDAL = WR + RU{ tRP[ns] / tCK[ns] }, where RU stands for round up. WR refers to the tWR parameter stored in the MRS. For tRP, if the result of the division is not already an integer, round up to the next highest integer. tCK refers to the application clock period. Example: For DDR667 at tCK = 3ns with WR programmed to 5 clocks. tDAL = 5 + (15 ns / 3 ns) clocks = 5 + (5) clocks = 10 clocks. 15. The clock frequency is allowed to change during self refresh mode or precharge power-down mode. 16. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-667/800, tAOND is 2 clock cycles after the clock edge that registered a first ODT HIGH counting the actual input clock edges. 17. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-667/800, if tCK(avg) = 3 ns is assumed, tAOFD is 1.5 ns (= 0.5 x 3 ns) for DDR2-1066, thie is 0.9375 ns (= 0.5 x 1.875 ns) after the second trailing clock edge counting from the clock edge that registered a first ODT LOW and by counting the actual input clock edges. 18. tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level which specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) . Figure 17 shows a method to calculate the point when device is no longer driving (tHZ), or beginsdriving (tLZ) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consistent. tLZ(DQ) refers to tLZ of the DQS and tLZ(DQS) refers to tLZ of the (U/L/R)DQS and (U/L/R)DQS each treated as single-ended signal. 19. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving (tRPST), or begins driving (tRPRE). Figure 17 shows a method to calculate these points when the device is no longer driving (tRPST), or begins driving (tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consistent. VOH + x mV VTT + 2x mV VOH + 2x mV VTT + x mV tLZ tHZ tRPRE begin point tRPST end point T2 T1 VOL + 2x mV VTT - x mV VOL + x mV VTT - 2x mV tHZ,tRPST end point = 2*T1-T2 T1 T2 tLZ,tRPRE begin point = 2*T1-T2 Figure 19. Method for calculating transitions and endpoints 39 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 20. Input waveform timing tDS with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the VIH(AC) level to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL(AC) level to the differential data strobe crosspoint for a falling signal applied to the device under test. DQS, DQS signals must be monotonic between VIL(DC)max and VIH(DC)min. See Figure 20. 21. Input waveform timing tDH with differential data strobe enabled MR[bit10]=0, is referenced from the differential data strobe crosspoint to the input signal crossing at the VIH(DC) level for a falling signal and from the differential data strobe crosspoint to the input signal crossing at the VIL(DC) level for a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL(DC)max and VIH(DC)min. See Figure 20. DQS DQS tDS tDH tDS tDH VDDQ VIH(AC)min VIH(DC)min VREF(DC) VIL(DC)max VIL(AC)max VSS Figure 20. Differential input waveform timing - tDS and tDH 22. Input waveform timing is referenced from the input signal crossing at the VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test. See Figure 21. 23. Input waveform timing is referenced from the input signal crossing at the VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the device under test. See Figure 21. CK CK tIS tIH tIS tIH VDDQ VIH(AC)min VIH(DC)min VREF(DC) VIL(DC)max VIL(AC)max VSS Figure 21. Differential input waveform timing - tIS and tIH 40 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 24. tWTR is at lease two clocks (2 x tCK or 2 x nCK) independent of operation frequency. 25. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the VIH(AC) level to the single-ended data strobe crossing VIH/L(DC) at the start of its transition for a rising signal, and from the input signal crossing at the VIL(AC) level to the single-ended data strobe crossing VIH/L(DC) at the start of its transition for a falling signal applied to the device under test. The DQS signal must be monotonic between VIL(DC)max and VIH(DC)min. 26. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the VIH(DC) level to the single-ended data strobe crossing VIH/L(AC) at the end of its transition for a rising signal, and from the input signal crossing at the VIL(DC) level to the single-ended data strobe crossing VIH/L(AC) at the end of its transition for a falling signal applied to the device under test. The DQS signal must be monotonic between VIL(DC)max and VIH(DC)min. 27. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of tIS + 2 x tCK + tIH. 28. If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed. 29. These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to its respective clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should be met whether clock jitter is present or not. 30. These parameters are measured from a data strobe signal ((L/U/R)DQS/DQS) crossing to its respective clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these parameters should be met whether clock jitter is present or not. 31. These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal ((L/U/ R)DQS/DQS) crossing. 32. For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK(avg)}, which is in clock cycles, assuming all input clock jitter specifications are satisfied. For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock jitter specifications are met. This means: For DDR2-667 5-5-5, of which tRP = 15ns, the device will support tnRP = RU{tRP / tCK(avg)} = 5, i.e. as long as the input clock jitter specifications are met, Precharge command at Tm and Active command at Tm+5 is valid even if (Tm+5 - Tm) is less than 15ns due to input clock jitter. 33. tDAL [nCK] = WR [nCK] + tnRP [nCK] = WR + RU {tRP [ps] / tCK(avg) [ps] }, where WR is the value programmed in the mode register set. 34. New units, 'tCK(avg)' and 'nCK', are introduced in DDR2-667, DDR2-800 and DDR2-1066. Unit 'tCK(avg)' represents the actual tCK(avg) of the input clock under operation. Unit 'nCK' represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2-400 and DDR2-533, 'tCK' is used for both concepts. ex) tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may be registered at Tm+2, even if (Tm+2 - Tm) is 2 x tCK(avg) + tERR(2per),min. 35. Input clock jitter spec parameter. These parameters and the ones in the table below are referred to as 'input clock jitter spec parameters' and these parameters apply to DDR2-667 and DDR2-800 only. The jitter specified is a random jitter meeting a Gaussian distribution. Parameter Clock period jitter Clock period jitter during DLL locking period Cycle to cycle clock period jitter Symbol DDR2-667 DDR2-800 DDR2-1066 units Notes Min Max Min Max Min Max tJIT(per) -125 125 -100 100 -90 90 tJIT(per,lck) -100 100 -80 80 -80 80 ps 35 tJIT(cc) -250 250 -200 200 -180 180 ps 35 ps 35 Cycle to cycle clock period jitter during DLL locking period tJIT(cc,lck) -200 200 -160 160 -160 160 ps 35 Cumulative error across 2 cycles tERR(2per) -175 175 -150 150 -132 132 ps 35 Cumulative error across 3 cycles tERR(3per) -225 225 -175 175 -157 157 ps 35 Cumulative error across 4 cycles tERR(4per) -250 250 -200 200 -175 175 ps 35 Cumulative error across 5 cycles tERR(5per) -250 250 -200 200 -188 188 ps 35 Cumulative error across n cycles, n = 6 ... 10, inclusive tERR(6-10per) -350 350 -300 300 -250 250 ps 35 Cumulative error across n cycles, n = 11 ... 50, inclusive tERR(11-50per) -450 450 -450 450 -425 425 ps 35 tJIT(duty) -125 125 -100 100 -75 75 ps 35 Duty cycle jitter 41 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI Definitions : - tCK(avg) tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window. N tCK(avg) = where tCKj /N j=1 N = 200 - tCH(avg) and tCL(avg) tCH(avg) is defined as the average HIGH pulse width, as calculated across any consecutive 200 HIGH pulses. N tCH(avg) = where tCHj /(N x tCK(avg)) j=1 N = 200 tCL(avg) is defined as the average LOW pulse width, as calculated across any consecutive 200 LOW pulses. N tCL(avg) = where tCLj /(N x tCK(avg)) j=1 N = 200 - tJIT(duty) tJIT(duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of any single tCH from tCH(avg). tCL jitter is the largest deviation of any single tCL from tCL(avg). tJIT(duty) = Min/max of {tJIT(CH), tJIT(CL)} where, tJIT(CH) = {tCHi- tCH(avg) where i=1 to 200} tJIT(CL) = {tCLi- tCL(avg) where i=1 to 200} - tJIT(per), tJIT(per,lck) tJIT(per) is defined as the largest deviation of any single tCK from tCK(avg). tJIT(per) = Min/max of {tCKi- tCK(avg) where i=1 to 200} tJIT(per) defines the single period jitter when the DLL is already locked. tJIT(per,lck) uses the same definition for single period jitter, during the DLL locking period only. tJIT(per) and tJIT(per,lck) are not guaranteed through final production testing. - tJIT(cc), tJIT(cc,lck) tJIT(cc) is defined as the difference in clock period between two consecutive clock cycles : tJIT(cc) = Max of |tCKi+1 - tCKi| tJIT(cc) defines the cycle to cycle jitter when the DLL is already locked. tJIT(cc,lck) uses the same definition for cycle to cycle jitter, during the DLL locking period only. tJIT(cc) and tJIT(cc,lck) are not guaranteed through final production testing. - tERR(2per), tERR (3per), tERR (4per), tERR (5per), tERR (6-10per) and tERR (11-50per) tERR is defined as the cumulative error across multiple consecutive cycles from tCK(avg). i+n-1 tERR(nper) = tCKj - n x tCK(avg) j=1 where n=2 n=3 n=4 n=5 for for for for tERR(2per) tERR(3per) tERR(4per) tERR(5per) 6 n 10 11 n 50 for for tERR(6-10per) tERR(11-50per) 42 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 36. These parameters are specified per their average values, however it is understood that the following relationship between the average timing and the absolute instantaneous timing holds at all times. (Min and max of SPEC values are to be used for calculations in the table below.) Parameter Absolute clock Period Symbol Min Max Units tCK(abs) tCK(avg),min + tJIT(per),min tCK(avg),max + tJIT(per),max ps Absolute clock HIGH pulse width tCH(abs) tCH(avg),min x tCK(avg),min + tJIT(duty),min tCH(avg),max x tCK(avg),max + tJIT(duty),max ps Absolute clock LOW pulse width tCL(abs) tCL(avg),min x tCK(avg),min + tJIT(duty),min tCL(avg),max x tCK(avg),max + tJIT(duty),max ps Example: For DDR2-667, tCH(abs),min = ( 0.48 x 3000 ps ) - 125 ps = 1315 ps 37. tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter. It is used in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the following equation; tHP = Min ( tCH(abs), tCL(abs) ), where, tCH(abs) is the minimum of the actual instantaneous clock HIGH time; tCL(abs) is the minimum of the actual instantaneous clock LOW time; 38. tQHS accounts for: 1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is transferred to the output; and 2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are independent of each other, due to data pin skew, output pattern effects, and p-channel to n-channel variation of the output drivers 39. tQH = tHP - tQHS, where: tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the max column. {The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.} Examples: 1) If the system provides tHP of 1315 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 975 ps minimum. 2) If the system provides tHP of 1420 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 1080 ps minimum. 40. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per),min = - 272 ps and tERR(6-10per),max = + 293 ps, then tDQSCK,min(derated) = tDQSCK,min - tERR(6-10per),max = - 400 ps - 293 ps = - 693 ps and tDQSCK,max(derated) = tDQSCK,max - tERR(610per),min = 400 ps + 272 ps = + 672 ps. Similarly, tLZ(DQ) for DDR2-667 derates to tLZ(DQ),min(derated) = - 900 ps - 293 ps = - 1193 ps and tLZ(DQ),max(derated) = 450 ps + 272 ps = + 722 ps. 41. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per) of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(per),min = - 72 ps and tJIT(per),max = + 93 ps, then tRPRE,min(derated) = tRPRE,min + tJIT(per),min = 0.9 x tCK(avg) - 72 ps = + 2178 ps and tRPRE,max(derated) = tRPRE,max + tJIT(per),max = 1.1 x tCK(avg) + 93 ps = + 2843 ps. 42. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(duty) of the input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(duty),min = - 72 ps and tJIT(duty),max = + 93 ps, then tRPST,min(derated) = tRPST,min + tJIT(duty),min = 0.4 x tCK(avg) - 72 ps = + 928 ps and tRPST,max(derated) = tRPST,max + tJIT(duty),max = 0.6 x tCK(avg) + 93 ps = + 1592 ps. 43. When the device is operated with input clock jitter, this parameter needs to be derated by { - tJIT(duty),max - tERR(6-10per),max } and { tJIT(duty),min - tERR(6-10per),min } of the actual input clock. (output deratings are relative to the SDRAM input clock.) For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per),min = - 272 ps, tERR(6- 10per),max = + 293 ps, tJIT(duty),min = 106 ps and tJIT(duty),max = + 94 ps, then tAOF,min(derated) = tAOF,min + { - tJIT(duty),max - tERR(6-10per),max } = - 450 ps + { - 94 ps - 293 ps} = - 837 ps and tAOF,max(derated) = tAOF,max + { - tJIT(duty),min - tERR(6-10per),min } = 1050 ps + { 106 ps + 272 ps } = + 1428 ps. 43 of 44 Rev. 1.0 July 2009 DDR2 SDRAM K4T51163QI 44. For tAOFD of DDR2-667/800, the 1/2 clock of nCK in the 2.5 x nCK assumes a tCH(avg), average input clock HIGH pulse width of 0.5 relative to tCK(avg). tAOF,min and tAOF,max should each be derated by the same amount as the actual amount of tCH(avg) offset present at the DRAM input with respect to 0.5. For example, if an input clock has a worst case tCH(avg) of 0.48, the tAOF,min should be derated by subtracting 0.02 x tCK(avg) from it, whereas if an input clock has a worst case tCH(avg) of 0.52, the tAOF,max should be derated by adding 0.02 x tCK(avg) to it. Therefore, we have; tAOF,min(derated) = tAC,min - [0.5 - Min(0.5, tCH(avg),min)] x tCK(avg) tAOF,max(derated) = tAC,max + 0.6 + [Max(0.5, tCH(avg),max) - 0.5] x tCK(avg) tAOF,min(derated) = Min(tAC,min, tAC,min - [0.5 - tCH(avg),min] x tCK(avg)) tAOF,max(derated) = 0.6 + Max(tAC,max, tAC,max + [tCH(avg),max - 0.5] x tCK(avg)) where tCH(avg),min and tCH(avg),max are the minimum and maximum of tCH(avg) actually measured at the DRAM input balls. 45. For tAOFD of DDR2-1066, the 1/2 clock of nCK in the 2.5 x nCK assumes a tCH(avg), average input clock HIGH pulse width of 0.5 relative to tCK(avg). tAOF,min and tAOF,max should each be derated by the same amount as the actual amount of tCH(avg) offset present at the DRAM input with respect to 0.5. For example, if an input clock has a worst case tCH(avg) of 0.48, the tAOF,min should be derated by subtracting 0.02 x tCK(avg) from it, whereas if an input clock has a worst case tCH(avg) of 0.52, the tAOF,max should be derated by adding 0.02 x tCK(avg) to it. Therefore, we have; tAOF,min(derated) = tAC,min - [0.5 - Min(0.5, tCH(avg),min)] x tCK(avg) tAOF,max(derated) = tAC,max + 0.6 + [Max(0.5, tCH(avg),max) - 0.5] x tCK(avg) or tAOF,min(derated) = Min(tAC,min, tAC,min - [0.5 - tCH(avg),min] x tCK(avg)) tAOF,max(derated) = 0.6 + Max(tAC,max, tAC,max + [tCH(avg),max - 0.5] x tCK(avg)) where tCH(avg),min and tCH(avg),max are the minimum and maximum of tCH(avg) actually measured at the DRAM input balls. Note that these deratings are in addition to the tAOF derating per input clock jitter, i.e. tJIT(duty) and tERR(6-10per). However tAC values used in the equations shown above are from the timing parameter table and are not derated. Thus the final derated values for tAOF are; tAOF,min(derated_final) = tAOF,min(derated) + { - tJIT(duty),max - tERR(6-10per),max } tAOF,max(derated_final) = tAOF,max(derated) + { - tJIT(duty),min - tERR(6-10per),min } 44 of 44 Rev. 1.0 July 2009