Numerical Index 2N3766-2N3855A =} > MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS si = : 55 | | REPLACE. | PAGE Po 7-E] Ty | Vee | Voce | = tre @ Ic Veeisan @ le 2] fo |e TYPE 2/5 | ment | number | USE & 5 2} hu. /B] |B =lc @25C | B] C | (volts) | (volts) |S | (min) (max) 5] (volts) 3 3 Sig 2N3766 S| N 7-142| LPA 20W | Cc | 175 80 60190 40 | 160 O.5A 2.5 1.0A 40 |E 15M | T 2N3767 S| N 7-142} LPA 20W} Cc} 175 100 80+ 0 40 | 160 O.5A 2.5 1.0A 40]/E 15M | T 2N3770 G| P RFA 50M} A | 100 10 6.0] 0 10 | 200 1.0M 10] E 100M | T 2N3771 S| N LPA 150W | Cj 200 50 40] 0 15 60 15A 2.0 15A 40 ]E 0.2M/T 2N3772 S| N] 2N3715 7-125] LPA 150W | C ; 200 100 60] 0 15 60 10A 1.4 LOA 40)E 0.2M/T 2N3773 S}N LPA 150W | C | 200 160 140; 0 15 60 8.0A 1.4 8.04 40 |E 0.2M)T 2N3774 S| P PMS 5.0W | C | 200 40 40] 0 20 60 0.24 0.2 O.2A 1.0M]T 2N3775 S| P PMS 5.0W | C } 200 60 6010 20 60 O.2A 0.2 0.24 1.0M |] T 2N3776 S$; P PMS 5.0W }] C } 200 80 80] 0 20 60 0.24 0.2 0.24 1.0M | T 2N3777 S| P PMS 5.0W | C | 200 100 100] 0 20 60 0.2A 0.2 0,2A 1.0MjT 2N3778 S}P PMS 5.0W | c | 200 40 40} 0 10 40 O.2A 0.2 0.24 1.OMiT 2N3779 S| P PMS 5.0W | | 200 60 60] 0 10 40 0.2A 0.2 0.24 1.0M}T 2N3780 s|P PMS 5.0W | Cj 200 80 80/0 10 40 0.2A 0.2 0.2A 1.0M|T 2N3781 S|] P PMS 5.0W {Cj 200 100 100 | 0 LO 40 0.24 0.2 0.24 1.0M | T 2N3782 S| P PMS 5,0W 7 C | 200 40 40]0 10 60 1.0A 0.75 1.0A 1.0m | T 2N3783 G]P 9984 RFA | 0.15W] A | 100 30 20) 0 20) 200 3.0M 0.25 5.0M 207E 0.86 )T 2N3784 Gi P 9-84 RFA | 0.15W } A | LOO 30 2030 20 | 200 3.0M 0.25 5.0M 20/E 0.7G|T 2N3785 Gy P 9~84 RFA] 0,15W} A | 100 15 12,0 15 | 200 3.0M 0.35 5.0M IS | E 0.7G|T 2N3788 S|N LPA 100W | Cc | 200 400 325 10 20 | 180} 0.504 50K | E 2N3789 S| P 7-147} LPA 150W | c | 200 60 60 | 0 25 90 L.OA 1.0 5.0A 25 ]E 30K | E 2N3790 S| P 7-147) LPA 150W | C | 200 60 80] 0 25 90 1.0A 1.0 5.0A 25 /E 30K | E 2N3791 S| P 7-147) LPA 150W | C | 200 60 60] 0 50 | 180 1.0A 1.0 5.0A 25 | E 30K | E 2N3792 Ss} P 7-147) LPA iow | c | 200 80 80,0 50 {| 180 1.04 1.0 5.0A 25 (EB 30K LE 2N3793 S| N | MPS6530 5-118] AFA | 0.25wW] A | 125 40 20] 0 20 {[ 120 10M 0.4 LOM 160M | T 2N3794 S] N.| MPS6531 5-118) AFA | 0.25W} A ] 125 40 20 | O | 100 | 600 1oM 0.4 LOM 100M {| T 2N3795 S| P PMS 5.0W | C | 200 120 120 | 0 12 36 1oM 0.2 10M O.5M|T aN Field Effect Transistors, see Table on Page 1-166 2N3798 S| P 8-278[ AFA | 0.36W | A | 200 60 60 | 0 4150 | 450 0.5M 0.2 0.1M 150 | E 30M } T 2N3799 s|P 8-278} AFA | 0.36W | A | 200 60 60 | 0 | 300 | 900 Q.5M Q.2 300 [ E 30M | T 2N3800 S| P 11-41] AFA | 0.25W] A | 200 60 60 | 0 | 150 | 450 O.1M 0.2 O.1M 150 | E 100M | T 2N3801 S| P 11-41] AFA | 0.25W | A | 200 60 60 | O | 300 | 900 O.1M 0.2 O.im 300 J E 100M | T 2N3802 S| P 11-41] DFA; 0.25W {A | 200 60 60 | 0 | 150 | 450 O.1M 0.2 O.1M i50 | E 100M | T 2N3803 S}|P LL-41] DFA | 0,25W } A j 200 60 60 | 0 | 300 | 900 0.1M 0.2 0.1M 300 | E LOOM | T 2N3804 S| P 11-41} DFA | 0.25W] A | 200 60 60 | 0 | 150 7 450 0.1M 0.2 O.1M 150 | E Loom | T 2N3805 S| P 11-41] DFA | 0.25W | A | 200 60 60 | O | 300 | 900 0.1M 0.2 0.1M 300 { E 100M | T 2N3806 S|, P 11-41) AFA Q.5W | A | 200 60 60 | a | 150 | 450 Q.1M G.2 O.1M IO) E LOOM | T 2N3807 Ss! P 11-41] AFA 0.5W | A | 200 60 60 | O | 300 | 900 O.1M 0.2 0.1M 300 JE 100M | T 2N3808 S|] P 11-41] DFA 0.5W | A | 200 60 60 | 0 | 150 |} 450 O.1M 0.2 O.1M 150 7E 100M | T 2N3809 S|] P 11-41] DFA O.5W 1A | 200 60 60 | oO | 300 | 900 0.1M 0.2 O.1M 300 | E 100M | T 2N3810 S| P li+41} DFA O.5W | A | 200 60 60 | 0 | 150 | 450 0.1M 0.2 0.1M 150, E 100M | T 2N3811 S| P 11-41] DFA 0.5W {| A j 200 60 60 | O | 300 j 900 O.1M 0.2 O.1M 300 | E 100M j T 2N3812 S| P 11-41] DFA 350M | A | 200 60 60 | 0 | 150 | 450 0.1M 0.2 0.1M 150 | E 100M | T 2N3813 S| P 11-41] DFA 350M | A | 200 60 60 | O | 300 | 900 0.1M 0.2 Q.1M 300 | E 100M | T 2N3814 S| P 11-41] DFA 350M | A | 200 60 60 |] 0 | 150 } 450 0.1M 0.2 0.1M 150] E LOOM } T 2N3815 S|] P 11-41] DFA 350M | A | 200 60 60 | O | 300 | 900 0.1M 0.2 O.1M 300 | E 100M | T 2N3816 $i P 11-41] DFA 350M | A | 200 60 60 | 0 | 150 | 450 0.1M 0.2 Q.1M 150 | E 100M | T 2N3817 Ss] P 1i+41| DFA 350M) A | 200 60 60 | O | 300 | 900 0.1M 0.2 0.1M 300 [E LOOM | T 2N3818 S|N 9-89 HPA 25W | C |] 175 60 60] S |5.0 50 400M 0.5 1.0A 3.0 ]E 2N3819 chew Field Effect Transistors, see Table on Page 1-166 2N382 2N3825 S| N | MPS3398 5-86 RFC | 0,25W | A | 150 30 i510 20 2.0M 0.25 2.0M 200M | T 2N3826 S| N | MPS3826 5-102] RFC O.2W | A} 150 60 4510 40 | 160 LOM 200M | T 2N3827 S| N | MPS3827 5-102 | RFC 0.2W ; A | 150 60 45 | 0 | 100 | 400 10M 200M | T 2N3828 S} N | MPS6565 5-148 | RFC 0.3W | A 4150 40 40]0 30 | 200 12M 360M | T 2N3829 S| P HSS | 0.36W | A | 200 35 20/0 30 | 120 30M 0.18 10M 350M | T 2N3830 S| N HSS 1.0W | A | 200 80 50 | 0 30 Q.15A 0.37] 0.154 200M | T 2N3831 S|N HSS L.0w | A | 200 70 40] 0 35 O.15A 0.3] 0.15A 200M | T 2N3832 S|[N HSS 0.2W | A | 200 15 6.010 25 | 125 2.0M 0.4 10M 800M | T 2n3833 | s|N HPA 25 | 1s|o]| 20 30M 2.5 2N3834 S|N HPA 25 15 }0 20 30M 2.5 ,E 2N3835 S|N HPA 25 15 | 0 20 30M 2.5 2N3836 S|N PHS L.OW | A | 200 80 60/0 2K ] 20K 2.04 1.8 5.0A 40M | T 2N3837 S| N PHS 1.,0W | A | 200 100 80] 0 2K | 20K 2.0A 1.8 5.0A 40M | T 2N3838 5 NP 11-45) HSA |] 0.25wW ] A | 200 60 40 {6 | 100 } 300 ] O.15A 0.4] 0.154 60) E 200M) T 2N33839 S| N RFA 200M | A | 200 30 15 | 0 30 3.0M 2.0G,T 2N3840 S| P CHP 0.4W | A | 200 50 50] 0 30 0.2M o.l1 5.0M 6.0M/T 2N3841 S| P CHP 0.3W {A | 200 100 100 | 0 15 0.2M 0.12 5.0M 1.5M | T 2N3842 S|] P CHP 0.3W | A | 200 120 120 | 0 10 1.0M 5.0M 1,.0M | T 2N3843 S| N | MPS6512 5-109] RFC 0.2W |] A {125 30 30/0 20 40 2.0M 60M | T 2N3843A | S|} N | MPS6512 5-109] RFC 0.2W {A | 125 30 30])0 20 40 2.0M 60M | T 2N3844 Sj] N | Mps6512 5-109} RFC 0.2W } A | 125 30 30 70 35 70 2.0M som | T 2N3844A |S | N | MPS6512 5-109] RFC 0.2W ]A | 125 30 30] 0 35 70 2.0M 90M | T 2N3845 S| N | MPS6512 5109] RFC O.2W }A 7 125 30 40] 0 60 | 120 2.0M 126M | T 2N3845A | S| N | MPS6513 5-109] RFC 0O.2W ]} A {125 30 30] 0 60 | 120 2.0M 126M ] T 2N3846 S|N LPA 4.0W | A } 175 300 200 | 0 10 60 LOA 0.75 10A 50]|)E LOM | T 2N3847 S|N LPA 4.0W | A] 175 400 300 | 0 10 60 10A 0.75 LOA 50 ]/E LOM j T 2N3848 S| N LPA 4.0W | A] 175 300 300 | 0 10 60 15A 1.0 I5A S50 |E LOM | T 2N3849 S|N LPA 4.0W FA 1175 400 300 |0 10 60 15A 1.0 15A SQ [E Lom | T 2N3850 S]N PHS 30W | C | 200 100 80/0 50 |] 150 1.04 0.25 1.0A 20M} T 2N3851L SIN PHS 30W | | 200 L100 80] 0 30 90 1.0A 0.25 1.0A 20M|T 2N3852 S| N PHS 30W | C f 200 60 4010 50 | 150 1.04 0.25 1.0A 20M/T 2N3853 S|] N PHS 30W | C | 200 60 40] 0 30 90 1.0A 0.25 1.0A 20M | T 2N3854 S| N | MPS6512 5-109] RFC O.2W | A | 150 18 18/0 35 70 2.0M 100M | T 2N3854A |S | N | MPS6512 5-109] RFC O.2W | A 4,150 30 30/0 35 70 2.0M 100M | T 2N3855 S| N | MPS6512 5-109] RFC O.2W | A | 150 18 18 | 0 60 | 120 2.0M 130M | T 2N3855A | S | N | MPS6512 5-109} RFC O,2W 4] A | 150 30 3010 60 | 120 2.0M 130M | T 1-143mumerical index 2N3459- 2N4338 FIELD-EFFECT TRANSISTORS INDEX (continued) = loss \ Breakdown Vis NF @ f TYPE = PAGE Inco" Voltage Css a8 te NOTE = | NUMBER | Min Max Vier: | Sub- Min Max pv = mA mA nA Volts | script | mhos | 2mhos BF) Az |> _ i 2N3459 | N 0.8 | 4.0 0.25] 50 | dco | i500 | 6000 | 18 | 4.0 2N3460 | N 0.2 | 1.0 0.25] 50 } DEO 800 | 4500 | 18 | 4.0 2N3465 | N 1.0 | 5.0 i.0| 40 | Deo 400 | 1200 | 15 | 5.0 2N3466 | N 1.0 | 5.0 1.0| 40 | aco 400 | 1200 | 15 | 5.0 2N3573 | P 0.02 | 0.1 0.6] 25 | GSS 100 300 | 6.0 } 3.0 2N3574 | P 0.075 (0.375 0.6| 25 | ess 200 600 | 6.0 | 3.0 2N3575 | P 0.2 | 1.0 0.6| 25 | Gss 300 900 | 6.0 | 3.0 2N3578 | P 0.9 | 4.5 15] 20 | ess | 1200 | 3500 | 65 2N3631 | N 2.0 10 20 | psx | 1400 ] 2800 | 7.5 2N3684 | N 2.5 | 7.5 0.1] 50 | GS 2000 | 3000 | 4.0 | 0.5 2N3685 | N 1.0 | 3.0 0.1} 50 | GS 1500 | 2500 14.0 } 0.5 2N3686 | N 0.4 | 1.2 o.1| 50 | s 1090 | 2000 | 4.0 | 0.5 2N3687 | N 0.1 | 0.5 0:1| 50 | Gs 500 | 1500 | 4:0 ).15* 2N3695 | P 1.25 | 3.75 0:1| 30 | es 1000 | 1750 15.0 | 0.2% 2N3696 | P 0.5 | 1.5 0.1] 30 | Gs 750 | 1250 | 5.0 | 0.2% 2N3697 | P 0.2 | 0.6 0:1} 30 | Gs 500 | 1000 | 5.0 | 0.2% 2n3698 | P 0.05 | 0.25 0.1) 30 | Gs 250 750 | 5.0 | 0.2% 2N3796 | N | 10-4 0.5 | 3.0 | 0.001] 25 | Dsx 900 | 1800 | 6.0 | 4.0 2n3797 | N | 10-4 2.0 | 6.0 | oloa1| 20 {| osx | 1500 | 3000 | 8.0 | 4.0 2N3819 | N 2.0 20 2.0] 25 | ess | 2000 | 6500 | 8.0 2N3820 | P 0.3 15 20; 20 | Gss 800 | 5000 | 32 2N3821 |N | 10-8 0.5 | 2.5 0.1] 50 | ess | 1500 | 4500 | 6.0 | 5.0 10 4H 2N3822 | N } 10-8 2.0 | 10 0.1] 50 | Gss | 3000 } 6500 | 6.0 | 5.0 10 4H 2N3823 |N | 10-10 | 4.0 20 0.5] 30 | pcs | 3500 | 6500 | 6.0 | 2.5 100 M 2n3824 |N | 10-8 0.11 50 | Gss 6.0 2n3882 | P 0.25 0.1) 30 | DS rooo | 2400 | 4.0 | 3.0 2n3909 | P 0.3 15 io| 20 | pes | 1000 | 5000 | 32 2N3921 | N 1.0 10 0.25] 50 |ss | 1500 | 7500 | 18 | 2.0 1.0 K} Dual 2N3922 | N 1.0 10 0:25| 50 | ess | 1500 | 7500 | 18 | 2.0 1.0 K| Dual 2N3934 | N 0.25 | 1.3 0.1] 50 | Gss 300 900 | 7.0 | 2.0 100 Hj] Dual 2N3935 | N 0.25 | 1.3 0.1{ 50 | ess 300 900 | 7.0 | 2.0 100 H]} Dual 2N3954 | N 0.5 | 5.0 0.1) 50 | Gss } 1000 4.0 ) 0.5 100 H]} Dual 2N3955 | WN 0.5 | 5.0 0.1/ 50 | Gss | 1000 4.0 | 0.5 100 #| Dual 2n3956 | N 0.5 | 5.0 0.1] 50 | Gss | 1000 4.0 | 0.5 100 H]| Duai 2N3957 | N 0.5 | 5.0 0:1] 50 | Gss | 1000 4.0 | 0.5 100 H| Dual 2N3953 | N 0.5 | 5.0 0:1] 50 | Gss | 1000 4.0 | 0.5 100 H| Dual 2n3966 =| N 2.0 0.1] 30 | DGS 6.0 2N3967,) N 2.5 10 0.1} 30 ) DGS } 1600 } 2400 | 5.0 2N3968 | N 1.0 | 5.0 0.1] 30 | pes | 1400 | 2000 | 5.0 2N3969 | N 0.4 | 2.0 o.1{| 30 | des 950 | 1450 | 5.0 2N3970 | N 50 | 150 | 0.25*| 40 | pGs 25 2N3971 | N 25 75 (0.25*| 40 | pes 25 2N3972 | N 5.0 30 | 0.25*| 40 | pes 25 2n3993 | P i0 1.2*| 25 | ess | 6000 | 12000 | 16 2n3994 | P 2.0 1.2*| 25 | ess | 4000 | 10000 | 16 2N4065 | P 0.005 0.0025] 25 | css 4.5 IN4066 | P 0.0025 | 25 | Gss 7.0 2N4082 | N 0.25 | 1.3 d.1| 50 300 7.0 Dual 2n4083 | N 0.25 | 1.3 0.1] 50 300 7.0 Dual 2N4084 | N 1.0 10 0.25| 50 1500 18 Dual 2n4085 | N 1,0 10 0.25] 50 1500 18 Dual 2N4091 | N 30 0.2*| 40 | pGo 16 2N4092 | N 15 0.2*} 40 | DGO 16 2N4093 | N 8.0 0.2*| 40 | Dco 16 2N4117 | N 0.03 | 0.09 0.01] 40 | css 70 210 | 3.0 2QN4117A | N 0.03 | 0.09 | 0.001| 40 | pco 3.0 2nall8 | N 0.08 | 0.24 0.01] 40 | css 80 250 | 3.0 2N4118A | N 0.08 | 0.24 | 0.001] 40 | pco 3.0 2N4119 | N 0.2 | 0.6 6.01) 40 | GSS 100 330 | 3.0 2N4119A | N 0.2 | 0.6 | 0.001] 40 | pco 3.0 2N4139 | N 8.0 il 1.0} 50 | DcO is 2na220 | Nn | 10-11 | 0.5 | 3.0 0:1] 30 | GSS | 1000 | 4000 | 6.0 2n4220A | N | 10-11 | 0.5 | 3.0 0.1| 30 | ess | 1000 | 4000 | 6.0 | 2.5 1.0 H 2N4221 | nw | 10-11 | 2.0 | 6.0 0.1] 30 | ess | 2000 | 5000 | 6.0 2N4221a | N | 10-11 | 2.0 | 6.0 0.1] 30 | ess { 2000 {| 5000 | 6.0 | 2.5 1.0 H 2n4222 |n | 10-11 | 5.0 15 0.1| 30 | ess | 2500 | 6000 | 6.0 2N42228 |N | 10-11 | 5.0 15 0.1} 30 | ess | 2500 | 6000 | 6.0 | 2.5 1.0 H 2n4223. | N | 10-15 | 3.0 18 0.25| 30 | ess | 3000 | 7000 | 6.0 | 5.0 200 M 2n4224 |N | 10-15 | 2.0 20 0.5| 30 | Gss | 2000 | 7500 | 6.0 2N4267 | P 0.001 | 0.005} 30 | css 15 2N4268 | P 0/001 | 0.005] 30 | ass 15 2N4302 | N 5.0 1.0] 30 | DGO 6.0 2N4303 | N 10 1.0] 30 | pGo 6.0 2N4304 | N 15 1:0] 30 | peo 6.0 2n4338 | N 0.2 | 0.6 0.1{ 50 | DGO 6.0 1-168Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.0 mAde) BE(sat) - 0.76 (a mAdc, I, = mAdc - . c 100 B 10 mA 0. 86 Co = 300 mAdc, I, = 30 mAdc) - 11 Gy = 500 mAdc, Ip 50 mAdc) 0.9 1.2 dg = 800 mAdc, Int 80 mAdc) - 1.5 My = 1,0 Ade, 1, = 100 mAdc) - 1.7 SMALL-SIGNAL CHARACTERISTICS Current-GainBandwidth Product fp MHz a, = 50 mAdc, Vor = 10 Vdc, f = 100 MHz) 300 - Output Capacitance Cob pF (Vop = 10 Vdc, Ip = 0, f = 140 kHz) 2N3724, 2N4013 - 12 2N3725, 2N4014 - 10 Input Capacitance Ciy pF (Var = 0.5 Vdc, Ine 0, f = 140 kHz) - 55 SWITCHING CHARACTERISTICS Turn-On Time ton - 35 ns (Vaan = 30 Vde, Vip = 3,8 Vdc 5 cc > "BE (aff) ; _ Delay Time Ig = 500 mAde, I; = 50 mAdc) a *0 ns Rise Time (See Figure 1) t. - 30 ns Turn-Off Time tote - 60 ns (Vog = 30 Vde, I, = 500 mAdc, Storage Time ~ . t - 50 ns 31 =lp2 = 50 mAdc) s Fall Time (See Figure 1) 2N3724, 2N4013 te - 25 ns 2N3725, 2N4014 - 30 * Pulse Test: Pulse Width = 300 us, Duty Cycle = 1.0%. FIGURE 1 SWITCHING TIMES TEST CIRCUIT +30Vv < > 15 -3.8V > 1.0 PF ( (o TO SAMPLING OSCILLOSCOPE 1.0k e 4 7 | Zin & 100 k22 TL t< 1.0 ns Vin = 19-7 1.0 BF 100 PULSE GENERATOR . t,. tp < 1.0ns 62 PW. ~ 1.0 ps Zin = 80.Q + == D.C. < 2.0% - ~ 8-258Field-Effect Transistors FIELD-EFFECT TRANSISTOR APPLICATIONS SELECTOR GUIDE GENERAL PURPOSE AMPLIFIERS AND SWITCHES Construction] Type No. Polarity Inss Operatins Comments MOS 2N3796 N 0 mA to 5.0 mA B 2N3797 MFE3001 JFET 2N3821* N 0 mA to 5.0 mA A Drain and Source interchangeable 2N3822* 5.0 mA to 10 mA 2N4220 0 mA to 5.0 mA 2N4220A* 0 mA to 5.0 mA 2N4221 5.0 mA to 10 mA 2N4221A* 5.0 mA to 10 mA 2N4222 10 mA to 20 mA 2N4222A* 10 mA to 20 mA 3N124 N OmAto 5.0 mA A Gate 1 and Gate 2 terminals externally 3N125 0 mA to 5.0 mA y accessible ' 3N126 5.0 mA to 10 mA MFE2093 N 0 mA to 5.0 mA A Drain and Source interchangeable MFE2094 ' y MFE2095 MFE2097 N 20 mA to 100 mA A MFE2098 N 20 mA to 100 mA A MFE4001* P 0 mA to 5.0 mA A MFE4002* 5.0 mA to 10 mA MFE4003* 10 mA to 20 mA MFE4004* 0 mA to 5.0 mA MFE4005* 5.0 mA to 10 mA MFE4006* 10 mA to 20 mA MPF103 N 0 mA to 5.0 mA A Drain and Source interchangeable MPF104 \ 5.0 mA to 10 mA y MPF105 10 mA to 20 mA MPFi51* P 0 mA to 5.0 mA A Drain and Source interchangeable MPF152* 5.0 mA to 10 mA MPF153* 10 mA to 20 mA MPF154* 0 mA to 5,0 mA MPF155* 5.0 mA to 10 mA MPF156* 10 mA to 20 mA *Noise Figure guaranteed at low frequency for audio applications. CHOPPERS AND SWITCHES uati wi Operating Construction Type No. Polarity Ings Mode t Comments MOS 2N4351 N . c Complementar 2N4352 - Cc omp y MFE3002 N - C Complementary; Drain and Source MFE3003 P - Cc interchangeable MPF159 N - Cc Complementary; Drain and Source MPF160 Pp - Cc interchangeable JFET 2N3824 N - A Drain and Source interchangeable MFE2133 N - A VHF RF AMPLIFIERS AND MIXERS ee ae Operating Construction Type No. Polarity Ibgs Mode t Comments MOS MFE3004 N 5.0 mA to 10 mA B MFE3005 5.0 mA to 10 mA B MPF157 N 5.0 mA to 10 mA B MPF158 N 5.0 mA to 10 mA B JFET 2N3823 N 10 mA to 20 mA A Drain and Source interchangeable 2N4223 ' 2N4224 2N4416 N 10 mA to 20 mA A MFE2000 N 5.0 mA to 10 mA A MFE2001 N 10 mA to 20 mA MFE2002 P 10 mA to 20 mA MPF102 N 10 mA to 20 mA A Drain and Source interchangeable MPF106 5.0 mA to 10 mA MPF107 10 mA to 20 mA tA = Depletion Mode, B = Depletion-Enhancement Mode, C = Enhancement Mode 10-3 QU MW (WWField-Effect Transistors 2N3821 (siLicoN) Vos = 50V Ipb=10mA 2N3822 P, = 300 mw 2N3o24 ce N-channel junction silicon field-effect transistors designed for audio amplifier, chopper and switching applications. SOURCE DRAIN NK ye OA GATE Drain and Source may be interchanged. CASE 20 (1) CASE LEAD (TO-72) MAXIMUM RATINGS a, = 250) Rating Symbol Value Unit Drain-Source Voltage Vos 50 Vdc Drain-Gate Voltage Voc 50 Vdc Gate-Source Voltage Vos -50 Vde Drain Current Ibn 10 mAdc Power Dissipation Py 300 mW Derate above 25C 2 mw/C Operating Junction Temperature T J 175 c Storage Temperature Range T 5tg -65 to + 200 c 10-8Field-Effect Transistors - 2N3821, 2N3822, 2N3824 (continued) ELECTRICAL CHARACTERISTICS , = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Gate-Source Breakdown Voltage v . Vde (Ig =-1uAde, Vpg = 0) (BRIGES -50 - Gate Reverse Current Igss nAdc (Vos = -30 Vdc, Vig = 0) - -0.1 (Vag = -30 Vde, Vpg 70) Ta = 150C) - -100 Gate-Source Cutoff Voltage Ves oft) Vde (ly = 0.5 nAdc, Vos = 15 Vdc) 2N3821 - -4 2N3822 - -6 Gate-Source Voltage Vos Vde My = 50 pAdc, Vos = 15 Vdc) 2N3821 -0.5 -2.0 (ly = 200 Adc, Vos = 15 Vde) 2N3822 -1.0 -4.0 Drain Cutoff Current nAdc if Wg = 15 Vde, Vos = -8 Vdc) 2N3824 "Diet ) - 0.1 Wg = 15 Vde, Vag = -8 Vde, Ty = 150C) 2N3824 - 100 ON CHARACTERISTICS Zero-Gate-Voltage Drain Current* Thss" mAdc Vg = 15 Vdc, Vos = 0) 2N3821 0.5 2.5 2N3822 2.0 10 DYNAMIC CHARACTERISTICS Forward Transfer Admittance Yt al yumhos Vos = 15 Vde, Vos = 0, f = 1 kHz)* 2N3821 1500 4500 2N3822 3000 6500 Vong = 15 Vde, Vos = 0, f = 100 MHz) 2N3821 1500 - 2N3822 3000 - Output Admittance* l, \* umhos Wpg = 15 Vdc, Vag = 0, f= 1 kHz) 2N3821 08 - 10 2N3822 - 20 Drain-Source Resistance Tas(on) Ohms (Vpn. = 5, 1, = 0, f = 1 kHz) 2N3824 , - 250 Gs D Input Capacitance c, se pF (Vg = 15 Vde, Vag = 0, f = 1 MHz) - 6 Reverse Transfer Capacitance Coss pF Wo = 15 Vde, Vos = 0, f = 1 MHz) 2N3821 - 3 2N3822 - 3 Veg = -8 Vdc, Vog = 0, f = 1 MHz) 2N3824 - 3 Average Noise Figure NF dB (Vong = 15 Vde, Vag = 0, Rg = 1 megohm, f= 10 Hz, Noise Bandwidth = 5 Hz) 2N3821, 2N3622 - 5 Equivalent Input Noise Voltage e, nv/Hzt Wpg = 15 Vde, Veg = 0, f= 10 Hx, Noise Bandwidth = 5 Hz) 2N3821, 2N3822 - 200 *Pulse Test: Pulse Width S 100 ms, Duty Cycle = 10% 10-9