VS-ST230C Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Hockey PUK Version), 410 A FEATURES * Center amplifying gate * Metal case with ceramic insulator * International standard case A-PUK (TO-200AB) * Designed and qualified for industrial level * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS A-PUK (TO-200AB) * DC motor controls * Controlled DC power supplies PRIMARY CHARACTERISTICS IT(AV) 410 A VDRM/VRRM 400 V, 800 V, 1200 V, 1400 V, 1600 V, 1800 V, 2000 V VTM 1.69 V IGT 90 mA TJ -40 C to +125 C Package A-PUK (TO-200AB) Circuit configuration Single SCR * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) Ths IT(RMS) Ths ITSM I2t A 55 C 780 A 25 C 5700 60 Hz 5970 50 Hz 163 60 Hz 149 Typical TJ UNITS 410 50 Hz VDRM/VRRM tq VALUES A kA2s 400 to 2000 V 100 s -40 to +125 C IDRM/IRRM, MAXIMUM AT TJ = TJ MAXIMUM mA ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-ST230C..C VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK VOLTAGE V 04 400 500 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 18 1800 1900 20 2000 2100 30 Revision: 27-Sep-17 Document Number: 94398 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230C Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at heatsink temperature Maximum RMS on-state current Maximum peak, one-cycle non-repetitive surge current IT(AV) IT(RMS) ITSM TEST CONDITIONS 180 conduction, half sine wave double side (single side) cooled t = 10 ms No voltage reapplied 5700 100 % VRRM reapplied 4800 t = 10 ms t = 10 ms I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t A C 780 t = 8.3 ms No voltage reapplied 5970 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 163 148 115 t = 0.1 to 10 ms, no voltage reapplied 1630 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.92 VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.88 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.81 Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.69 VTM IH Maximum (typical) latching current IL TJ = 25 C, anode supply 12 V resistive load kA2s 105 High level value of threshold voltage Maximum holding current A 5000 Low level value of threshold voltage Maximum on-state voltage UNITS 55 (85) DC at 25 C heatsink temperature double side cooled t = 8.3 ms Maximum I2t for fusing VALUES 410 (165) 600 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA Revision: 27-Sep-17 Document Number: 94398 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230C Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power PG(AV) Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM DC gate current required to trigger IGT 10.0 2.0 TJ = TJ maximum, tp 5 ms 3.0 TJ = TJ maximum, tp 5 ms 20 IGD DC gate voltage not to trigger VGD A V TJ = - 40 C 180 - TJ = 25 C 90 150 40 - Maximum required gate trigger/ current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 25 C TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied UNITS W 5.0 TJ = 125 C DC gate current not to trigger MAX. TJ = TJ maximum, f = 50 Hz, d% = 50 TJ = - 40 C VGT TYP. TJ = TJ maximum, tp 5 ms TJ = 125 C DC gate voltage required to trigger VALUES TEST CONDITIONS 2.9 - 1.8 3.0 1.2 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating temperature range Maximum storage temperature range TEST CONDITIONS TJ -40 to 125 TStg -40 to 150 Maximum thermal resistance, junction to heatsink RthJ-hs Maximum thermal resistance, case to heatsink RthC-hs DC operation single side cooled 0.17 DC operation double side cooled 0.08 DC operation single side cooled 0.033 DC operation double side cooled 0.017 Mounting force, 10 % Approximate weight Case style See dimensions - link at the end of datasheet C K/W 4900 (500) N (kg) 50 g A-PUK (TO-200AB) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180 0.015 0.017 0.011 0.011 120 0.018 0.019 0.019 0.019 90 0.024 0.024 0.026 0.026 60 0.035 0.035 0.036 0.036 30 0.060 0.060 0.060 0.061 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 27-Sep-17 Document Number: 94398 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230C Series 130 Vishay Semiconductors ST230C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 120 110 100 90 Conduction Angle 80 30 70 60 90 60 120 180 50 40 0 40 80 120 160 200 240 280 320 Average On-state Current (A) Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) www.vishay.com 130 ST230C..C Series (Single Side Cooled) R thJ-hs (DC) = 0.17 K/W 120 110 100 90 80 Conduction Period 70 60 30 50 60 90 40 30 120 180 DC 20 0 100 200 300 400 500 Average On-state Current (A) ST230C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W 120 110 100 90 80 Conduction Angle 70 30 60 60 90 50 120 40 30 180 20 0 100 200 300 400 500 Average On-state Current (A) Fig. 3 - Current Ratings Characteristics 110 100 90 Conduction Period 80 70 30 60 60 90 50 120 40 180 30 DC 20 0 100 200 300 400 500 600 700 800 Average On-state Current (A) 1100 180 120 90 60 30 1000 900 800 700 RMS Limit 600 500 400 Conduction Angle 300 ST230C..C Series T J = 125C 200 100 0 0 100 200 300 400 500 600 Average On-state Current (A) Fig. 5 - On-State Power Loss Characteristics 600 Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Fig. 2 - Current Ratings Characteristics 130 ST230C..C Series (Double Side Cooled) R thJ-hs (DC) = 0.08 K/W 120 Fig. 4 - Current Ratings Characteristics Maximum Allowable Heatsink Temperature (C) Maximum Allowable Heatsink Temperature (C) Fig. 1 - Current Ratings Characteristics 130 1400 DC 180 120 90 60 30 1200 1000 800 RMS Limit 600 Conduction Period 400 ST230C..C Series T J = 125C 200 0 0 200 400 600 800 1000 Average On-state Current (A) Fig. 6 - On-State Power Loss Characteristics Revision: 27-Sep-17 Document Number: 94398 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230C Series 5500 Vishay Semiconductors 5000 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125C 4500 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Peak Half Sine Wave On-state Current (A) Peak Half Sine Wave On-state Current (A) www.vishay.com 4000 3500 3000 2500 ST230C..C Series 2000 1 10 100 6500 6000 5500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial Tj = 125C No Voltage Reapplied Rated Vrrm Reapplied 5000 4500 4000 3500 3000 2500 ST230C..C Series 2000 0.01 0.1 1 Pulse Train Duration (s) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 7 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Fig. 8 - Maximum Non-Repetitive Surge Current Single and Double Side Cooled Instantaneous On-state Current (A) 10000 Tj = 25C Tj = 125C 1000 ST230C..C Series 100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance Z thJ-hs (K/W) Fig. 9 - On-State Voltage Drop Characteristics 1 Steady State Value R thJ-hs = 0.17 K/W (Single Side Cooled) 0.1 R thJ-hs = 0.08 K/W (Double Side Cooled) (DC Operation) 0.01 0.001 0.001 ST230C..C Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Revision: 27-Sep-17 Document Number: 94398 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230C Series www.vishay.com Instantaneous Gate Voltage (V) 100 10 Vishay Semiconductors (1) PGM = 10W, (2) PGM = 20W, (3) PGM = 40W, (4) PGM = 60W, Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 s b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 s tp = 4ms tp = 2ms tp = 1ms tp = 0.66ms (a) (b) IGD 0.1 0.001 Tj=-40 C VGD Tj=25 C Tj=125 C 1 (1) Frequency Limited by PG(AV) Device: ST230C..C Series 0.01 0.1 (2) (3) (4) 1 10 100 Instantaneous Gate Current (A) Fig. 11 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 23 0 C 20 C 1 - 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Thyristor 3 - Essential part number 4 - 0 = converter grade 5 - C = ceramic PUK 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - C = PUK case A-PUK (TO-200AB) 8 - 0 = eyelet terminals (gate and auxiliary cathode unsoldered leads) 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) 2 = eyelet terminals (gate and auxiliary cathode soldered leads) 3 = fast-on terminals (gate and auxiliary cathode soldered leads) 9 - Critical dV/dt: None = 500 V/s (standard selection) L = 1000 V/s (special selection) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95074 Revision: 27-Sep-17 Document Number: 94398 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors A-PUK (TO-200AB) DIMENSIONS in millimeters (inches) Anode to gate Creepage distance: 7.62 (0.30) minimum Strike distance: 7.12 (0.28) minimum 19 (0.75) DIA. MAX. 0.3 (0.01) MIN. C G 13.7/14.4 (0.54/0.57) A 0.3 (0.01) MIN. Gate terminal for 1.47 (0.06) DIA. pin receptacle 19 (0.75) DIA. MAX. Note: A = Anode C = Cathode G = Gate 38 (1.50) DIA MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 6.5 (0.26) 4.75 (0.19) 25 5 42 (1.65) MAX. 28 (1.10) Quote between upper and lower pole pieces has to be considered after application of mounting force (see thermal and mechanical specification) Revision: 12-Jul-17 Document Number: 95074 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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