LT5527
1
5527fa
TYPICAL APPLICATION
DESCRIPTION
400MHz to 3.7GHz
5V High Signal Level
Downconverting Mixer
The LT
®
5527 active mixer is optimized for high linearity,
wide dynamic range downconverter applications. The
IC includes a high speed differential LO buffer amplifi er
driving a double-balanced mixer. Broadband, integrated
transformers on the RF and LO inputs provide single-ended
50Ω interfaces. The differential IF output allows convenient
interfacing to differential IF fi lters and amplifi ers, or is
easily matched to drive 50Ω single-ended, with or without
an external transformer.
The RF input is internally matched to 50Ω from 1.7GHz
to 3GHz, and the LO input is internally matched to 50Ω
from 1.2GHz to 5GHz. The frequency range of both ports
is easily extended with simple external matching. The IF
output is partially matched and usable for IF frequencies
up to 600MHz.
The LT5527’s high level of integration minimizes the total
solution cost, board space and system-level variation.
L, LT, LTC and LTM are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Operation over a wider frequency range is possible with reduced performance. Consult factory
for information and assistance.
FEATURES
APPLICATIONS
n 50Ω Single-Ended RF and LO Ports
n Wide RF Frequency Range: 400MHz to 3.7GHz*
n High Input IP3: 24.5dBm at 900MHz
23.5dBm at 1900MHz
n Conversion Gain: 3.2dB at 900MHz
2.3dB at 1900MHz
n Integrated LO Buffer: Low LO Drive Level
n High LO-RF and LO-IF Isolation
n Low Noise Figure: 11.6dB at 900MHz
12.5dB at 1900MHz
n Very Few External Components
n Enable Function
n 4.5V to 5.25V Supply Voltage Range
n 16-Lead (4mm × 4mm) QFN Package
n Cellular, WCDMA, TD-SCDMA and UMTS
Infrastructure
n GSM900/GSM1800/GSM1900 Infrastructure
n 900MHz/2.4GHz/3.5GHz WLAN
n MMDS, WiMAX
n High Linearity Downmixer Applications
High Signal Level Downmixer for Multi-Carrier Wireless Infrastructure 1.9GHz Conversion Gain, IIP3, SSB NF and
LO-RF Leakage vs LO Power
BIAS
EN
RF
IF+
IF–
100nH
100nH
4.7pF
220nH
IF
OUTPUT
240MHz
RF
INPUT
VCC2 VCC1
LO INPUT
–3dBm (TYP)
1nF 1μF
1nF
4.7pF
5V
5527 TA01a
LT5527
GND LO POWER (dBm)
–9
2
GC, SSB NF (dB), IIP3 (dBm)
LO-RF LEAKAGE (dBm)
6
10
14
18
–5 –1–7 –3 1
5527 TA01b
3
22
4
8
12
16
20
24
–75
–65
–55
–45
–35
–25
–70
–60
–50
–40
–30
–20
IIP3
SSB NF
LO-RF
GC
IF = 240MHz
LOW SIDE LO
TA = 25°C
VCC = 5V
LT5527
2
5527fa
PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS
Supply Voltage (VCC1, VCC2, IF+, IF–) .......................5.5V
Enable Voltage ................................ –0.3V to VCC + 0.3V
LO Input Power (380MHz to 4GHz) ......................10dBm
LO Input DC Voltage ..............................–1V to VCC + 1V
Continuous RF Input Power
(400MHz to 4GHz) ...............................................12dBm
RF Input Power (400MHz to 4GHz) ......................15dBm
RF Input DC Voltage ...............................................±0.1V
Operating Temperature Range ................–40°C to 85°C
Storage Temperature Range ................... –65°C to 125°C
Junction Temperature (TJ) ................................... 125°C
(Note 1)
16 15 14 13
5 6 7 8
TOP VIEW
17
UF PACKAGE
16-LEAD (4mm s 4mm) PLASTIC QFN
9
10
11
12
4
3
2
1NC
NC
RF
NC
GND
IF+
IF–
GND
NC
LO
NC
NC
EN
VCC2
VCC1
NC
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
ORDER INFORMATION
LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE
LT5527EUF#PBF LT5527EUF#TRPBF 5527 16-Lead (4mm × 4mm) Plastic QFN –40°C to 85°C
Consult LTC Marketing for parts specifi ed with wider operating temperature ranges.
Consult LTC Marketing for information on non-standard lead based fi nish parts.
For more information on lead free part marking, go to: http://www.linear.com/leadfree/
For more information on tape and reel specifi cations, go to: http://www.linear.com/tapeandreel/
DC ELECTRICAL CHARACTERISTICS
V
CC = 5V, EN = High, TA = 25°C, unless otherwise specifi ed. Test
circuit shown in Figure 1. (Note 3)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Power Supply Requirements (VCC)
Supply Voltage 4.5 5 5.25 VDC
Supply Current VCC1 (Pin 7)
V
CC2 (Pin 6)
IF+ + IF– (Pin 11 + Pin 10)
Total Supply Current
23.2
2.8
52
78
60
88
mA
mA
mA
mA
Enable (EN) Low = Off, High = On
Shutdown Current EN = Low 100 μA
Input High Voltage (On) 3 VDC
Input Low Voltage (Off) 0.3 VDC
EN Pin Input Current EN = 5VDC 50 90 μA
Turn-ON Time 3μs
Turn-OFF Time 3μs
AC ELECTRICAL CHARACTERISTICS
Test circuit shown in Figure 1. (Notes 2, 3)
PARAMETER CONDITIONS MIN TYP MAX UNITS
RF Input Frequency Range No External Matching (Midband)
With External Matching (Low Band or High Band) 400
1700 to 3000
3700
MHz
MHz
LO Input Frequency Range No External Matching
With External Matching 380
1200 to 3500 MHz
MHz
IF Output Frequency Range Requires Appropriate IF Matching 0.1 to 600 MHz
LT5527
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5527fa
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: 450MHz, 900MHz and 3500MHz performance measured with
external LO and RF matching. See Figure 1 and Applications Information.
AC ELECTRICAL CHARACTERISTICS
Test circuit shown in Figure 1. (Notes 2, 3)
PARAMETER CONDITIONS MIN TYP MAX UNITS
RF Input Return Loss ZO = 50Ω, 1700MHz to 3000MHz >10 dB
LO Input Return Loss ZO = 50Ω, 1200MHz to 3400MHz >12 dB
IF Output Impedance Differential at 240MHz 407Ω||2.5pF R||C
LO Input Power 1200MHz to 3500MHz
380MHz to 1200MHz
–8
–5
–3
0
2
5
dBm
dBm
Note 3: Specifi cations over the –40°C to 85°C temperature range are
assured by design, characterization and correlation with statistical process
controls.
Note 4: SSB Noise Figure measurements performed with a small-signal
noise source and bandpass fi lter on RF input, and no other RF signal
applied.
Standard Downmixer Application: VCC = 5V, EN = High, TA = 25°C, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), fLO = fRF
– fIF, PLO = –3dBm (0dBm for 450MHz and 900MHz tests), IF output measured at 240MHz, unless otherwise noted. Test circuit shown
in Figure 1. (Notes 2, 3, 4)
PARAMETER CONDITIONS MIN TYP MAX UNITS
Conversion Gain RF = 450MHz, IF = 140MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1700MHz
RF = 1900MHz
RF = 2200MHz
RF = 2650MHz
RF = 3500MHz, IF = 380MHz
2.5
3.4
2.3
2.3
2.0
1.8
0.3
dB
dB
dB
dB
dB
dB
dB
Conversion Gain vs Temperature TA = –40°C to 85°C, RF = 1900MHz –0.018 dB/°C
Input 3rd Order Intercept RF = 450MHz, IF = 140MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1700MHz
RF = 1900MHz
RF = 2200MHz
RF = 2650MHz
RF = 3500MHz, IF = 380MHz
23.2
24.5
24.2
23.5
22.7
20.8
18.2
dBm
dBm
dBm
dBm
dBm
dBm
dBm
Single-Sideband Noise Figure RF = 450MHz, IF = 140MHz, High Side LO
RF = 900MHz, IF = 140MHz
RF = 1700MHz
RF = 1900MHz
RF = 2200MHz
RF = 2650MHz
RF = 3500MHz, IF = 380MHz
13.3
11.6
12.1
12.5
13.2
13.9
16.1
dB
dB
dB
dB
dB
dB
dB
LO to RF Leakage fLO = 400MHz to 2100MHz
fLO = 2100MHz to 3200MHz
≤–44
≤–36
dBm
dBm
LO to IF Leakage fLO = 400MHz to 700MHz
fLO = 700MHz to 3200MHz
≤–40
≤–50
dBm
dBm
RF to LO Isolation fRF = 400MHz to 2200MHz
fRF = 2200MHz to 3700MHz
>43
>38
dB
dB
RF to IF Isolation fRF = 400MHz to 800MHz
fRF = 800MHz to 3700MHz
>42
>54
dB
dB
2RF-2LO Output Spurious Product
(fRF = fLO + fIF/2)
900MHz: fRF = 830MHz at –5dBm, fIF = 140MHz
1900MHz: fRF = 1780MHz at –5dBm, fIF = 240MHz
–60
–65
dBc
dBc
3RF-3LO Output Spurious Product
(fRF = fLO + fIF/3)
900MHz: fRF = 806.67MHz at –5dBm, fIF = 140MHz
1900MHz: fRF = 1740MHz at –5dBm, fIF = 240MHz
–73
–63
dBc
dBc
Input 1dB Compression RF = 450MHz, IF = 140MHz, High Side
LO RF = 900MHz, IF = 140MHz
RF = 1900MHz
9.5
8.9
9.0
dBm
dBm
dBm
LT5527
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5527fa
Conversion Gain and IIP3
vs Temperature (Low Side LO)
Conversion Gain and IIP3
vs Temperature (High Side LO)
1900MHz Conversion Gain, IIP3
and NF vs Supply Voltage
1700MHz Conversion Gain, IIP3
and NF vs LO Power
1900MHz Conversion Gain, IIP3
and NF vs LO Power
2200MHz Conversion Gain, IIP3
and NF vs LO Power
Conversion Gain, IIP3 and NF
vs RF Frequency LO Leakage vs LO Frequency RF Isolation vs RF Frequency
RF FREQUENCY (MHz)
1700
GC, SSB NF (dB), IIP3 (dBm)
12
16
20
24
2500
5527 G01
8
4
10
14
18
22
SSB NF
GC
6
2
01900 2100 2300 2700
TA = 25°C
IF = 240MHz
LOW SIDE LO
HIGH SIDE LO
IIP3
LO FREQUENCY (MHz)
1200
–90
LO LEAKAGE (dBm)
–80
–70
–60
–50
–30
1500 1800 2100 2400
5527 G02
2700 3000
–40
–85
–75
–65
–55
–35
–45 LO-RF
LO-IF
TA = 25°C
PLO = –3dBm
RF FREQUENCY (MHz)
1700
ISOLATION (dB)
–60
–50
–40
–30
2500
5527 G03
–70
–80
–65
–55 RF-LO
RF-IF
–45
–35
–75
–85
–90 1900 2100 2300 2700
TA = 25°C
TEMPERATURE (°C)
–50
15
IIP3 (dBm)
GC (dB)
17
19
21
–25 025 50
5527 G04
75
23
25
16
18
20
22
24
0
2
4
6
8
10
1
3
5
7
9
IIP3
GC
100
IF = 240MHz
1700MHz
1900MHz
2200MHz
TEMPERATURE (°C)
–50
15
IIP3 (dBm)
GC (dB)
17
19
21
–25 025 50
5527 G05
75
23
25
16
18
20
22
24
0
2
4
6
8
10
1
3
5
7
9
IIP3
GC
100
IF = 240MHz
1700MHz
1900MHz
2200MHz
SUPPLY VOLTAGE (V)
4.5
GC, SSB NF (dB), IIP3 (dBm)
12
18
20 IIP3
SSB NF
GC
5.5
5527 G06
10
8
04.75 55.25
4
24
22
16
14
6
2
LOW SIDE LO
IF = 240MHz
–40°C
25°C
85°C
LO INPUT POWER (dBm)
–9
1
GC, SSB NF (dB), IIP3 (dBm)
5
9
13
17
25
–7 –5 –3 –1
5527 G07
13
21
3
7
11
15
23
19
IIP3
GC
LOW SIDE LO
IF = 240MHz
–40°C
25°C
85°C
SSB NF
LO INPUT POWER (dBm)
–9
0
GC, SSB NF (dB), IIP3 (dBm)
4
8
12
16
24
–7 –5 –3 –1
5527 G08
13
20
2
6
10
14
22
18
IIP3
GC
LOW SIDE LO
IF = 240MHz
–40°C
25°C
85°C
SSB NF
LO INPUT POWER (dBm)
–9
0
GC, SSB NF (dB), IIP3 (dBm)
4
8
12
16
24
–7 –5 –3 –1
5527 G09
13
20
2
6
10
14
22
18
LOW SIDE LO
IF = 240MHz
–40°C
25°C
85°C
SSB NF
IIP3
GC
TYPICAL AC PERFORMANCE CHARACTERISTICS
Midband (No external RF/LO matching)
VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO = –3dBm, IF output measured at 240MHz, unless
otherwise noted. Test circuit shown in Figure 1.
LT5527
5
5527fa
Conversion Gain, IIP3 and SSB
NF vs RF Frequency
3500MHz Conversion Gain, IIP3
and SSB NF vs LO Power
LO Leakage and RF-LO Isolation
vs LO and RF Frequency
Conversion Gain, IIP3 and NF
vs RF Frequency
450MHz Conversion Gain,
IIP3 and NF vs LO Power LO Leakage vs LO Frequency
IF Output Power, IM3 and IM5 vs
RF Input Power (2 Input Tones)
IFOUT, 2 × 2 and 3 × 3 Spurs
vs RF Input Power (Single Tone)
2 × 2 and 3 × 3 Spurs
vs LO Power (Single Tone)
RF INPUT POWER (dBm/TONE)
–21
OUTPUT POWER/TONE (dBm)
–70
–10
0
10
–15 –9 –6
5527 G10
–90
–30
–50
–80
–20
–100
–40
–60
–18 –12 –3 0
TA = 25°C
RF1 = 1899.5MHz
RF2 = 1900.5MHz
LO = 1660MHz
IFOUT
IM3
IM5
RF INPUT POWER (dBm)
–15
OUTPUT POWER (dBm)
–35
–15
15
5
9
5527 G11
–55
–75
–45
–25
–5
–65
–85
–95 –9 –3 3
–12–18 –6 0612
IFOUT
(RF = 1900MHz)
TA = 25°C
LO = 1660MHz
IF = 240MHz
2RF-2LO
(RF = 1780MHz)
3RF-3LO
(RF = 1740MHz)
LO INPUT POWER (dBm)
–9
–100
RELATIVE SPUR LEVEL (dBc)
–90
–80
–70
–7 –5 –3 –1
5527 G12
1
–60
–50
–95
–85
–75
–65
–55
3
3RF-3LO
(RF = 1740MHz)
TA = 25°C
LO = 1660MHz
IF = 240MHz
PRF = –5dBm
2RF-2LO
(RF = 1780MHz)
RF FREQUENCY (MHz)
3300
0
GC, SSB NF (dB), IIP3 (dBm)
2
6
8
10
20
14
3400 3500
5527 G13
4
16
18
12
3600 3700
IIP3
LOW SIDE LO
IF = 380MHz
TA = 25°C
GC
SSB NF
LO INPUT POWER (dBm)
–9
–1
GC, SSB NF (dB), IIP3 (dBm)
3
7
11
–7 –5 –3 –1
5527 G14
1
15
19
IIP3
SSB NF
GC
1
5
9
13
17
3
LOW SIDE LO
IF = 380MHz
TA = 25°C
LO/RF FREQUENCY (MHz)
3000
LO LEAKAGE (dBm)
RF-LO ISOLATION (dB)
–50
–40
3800
5527 G15
–60
–70 3200 3400 3600
–20
–30
LO-RF
LO-IF
RF-LO
30
40
20
10
60
50
RF FREQUENCY (MHz)
400
GC, SSB NF (dB), IIP3 (dBm)
12
18
20
500
5527 G18
10
8
0425 450 475
4
24
22 IIP3
SSB NF
GC
16
14
6
2
HIGH SIDE LO
TA = 25°C
IF = 140MHz
LO FREQUENCY (MHz)
400
–80
LO LEAKAGE (dBm)
–70
–60
–50
–40
–30
–20
600 800 1000 1200
5527 G20
LO-IF
(450MHz APP)
LO-RF
(450MHz APP)
LO-RF
(900MHz APP)
TA = 25°C
PLO = 0dBm
LO-IF
(900MHz APP)
High Band (3500MHz application with external RF matching) VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests,
Δf = 1MHz), low side LO, PLO = –3dBm, IF output measured at 380MHz, unless otherwise noted. Test circuit shown in Figure 1.
Low Band (450MHz application with external RF/LO matching) VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests,
Δf = 1MHz), PLO = 0dBm, IF output measured at 140MHz, unless otherwise noted. Test circuit shown in Figure 1.
LO INPUT POWER (dBm)
–6
0
GC, SSB NF (dB), IIP3 (dBm)
4
8
12
16
24
–4 –2 0 2
5527 G19
46
20
2
6
10
14
22
18
IIP3
GC
HIGH SIDE LO
IF = 140MHz
–40°C
25°C
85°C
SSB NF
TYPICAL AC PERFORMANCE CHARACTERISTICS
Midband (No external RF/LO matching)
VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO = –3dBm, IF output measured at 240MHz, unless
otherwise noted. Test circuit shown in Figure 1.
LT5527
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5527fa
TYPICAL AC PERFORMANCE CHARACTERISTICS
Conversion Gain, IIP3 and NF vs
RF Frequency (900MHz High Side
Application)
900MHz Conversion Gain, IIP3 and
NF vs LO Power (High Side LO)
2 × 2 and 3 × 3 Spurs
vs LO Power (Single Tone)
Supply Current vs Supply Voltage Shutdown Current vs Supply Voltage
Conversion Gain, IIP3 and NF vs
RF Frequency (900MHz Low Side
Application)
900MHz Conversion Gain, IIP3 and
NF vs LO Power (Low Side LO)
IFOUT
, 2 × 2 and 3 × 3 Spurs
vs RF Input Power (Single Tone)
Low Band (900MHz application with external
RF/LO matching) VCC = 5V, EN = High, PRF = –5dBm (–5dBm/tone for 2-tone IIP3 tests, Δf = 1MHz), PLO = 0dBm, IF output measured at
140MHz, unless otherwise noted. Test circuit shown in Figure 1.
RF FREQUENCY (MHz)
750
1
GC, SSB NF (dB), IIP3 (dBm)
5
9
13
17
25
800 850 900 950
5527 G21
1000 1050
21
3
7
11
15
23
19
IIP3
GC
SSB NF
LOW SIDE LO
TA = 25°C
IF = 140MHz
LO INPUT POWER (dBm)
–6
1
GC, SSB NF (dB), IIP3 (dBm)
5
9
13
17
25
–4 –2 0 2
5527 G22
46
21
3
7
11
15
23
19
IIP3
GC
LOW SIDE LO
IF = 140MHz
–40°C
25°C
85°C
SSB NF
RF INPUT POWER (dBm)
–18
OUTPUT POWER (dBm)
–40
–20
0
20
6
5527 G23
–60
–80
–50
–30
–10
10
–70
–90
–100 –12 –6 0
–15 9
–9 –3 312
IFOUT
(RF = 900MHz)
TA = 25°C
LO = 760MHz
IF = 140MHz
3RF-3LO
(RF = 806.67MHz)
2RF-2LO
(RF = 830MHz)
RF FREQUENCY (MHz)
750
1
GC, SSB NF (dB), IIP3 (dBm)
5
9
13
17
25
800 850 900 950
5527 G24
1000 1050
21
3
7
11
15
23
19
GC
SSB NF
HIGH SIDE LO
TA = 25°C
IF = 140MHz
IIP3
LO INPUT POWER (dBm)
–6
1
GC, SSB NF (dB), IIP3 (dBm)
5
9
13
17
25
–4 –2 0 2
5527 G25
46
21
3
7
11
15
23
19
IIP3
GC
HIGH SIDE LO
IF = 140MHz
–40°C
25°C
85°C
SSB NF
LO INPUT POWER (dBm)
–6
–90
RELATIVE SPUR LEVEL (dBc)
–80
–70
–60
–4 –2 02
5527 G26
4
–50
–40
–85
–75
–65
–55
–45
6
3RF-3LO
(RF = 806.67MHz)
TA = 25°C
LO = 760MHz
IF = 140MHz
PRF = –5dBm
2RF-2LO
(RF = 830MHz)
SUPPLY VOLTAGE (V)
4.5
0.1
SHUTDOWN CURRENT (μA)
185°C
60°C 25°C
0°C
–40°C
10
100
4.75 5
5527 G17
5.25 5.5
SUPPLY VOLTAGE (V)
4.5
71
SUPPLY CURRENT (mA)
72
74
75
76
82
79
4.75 5
5527 G16
73
80
81
78
–40°C
0°C
60°C
85°C
5.25 5.5
25°C
TYPICAL DC PERFORMANCE CHARACTERISTICS
Test circuit shown in Figure 1.
LT5527
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PIN FUNCTIONS
NC (Pins 1, 2, 4, 8, 13, 14, 16): Not Connected Internally.
These pins should be grounded on the circuit board for
improved LO-to-RF and LO-to-IF isolation.
RF (Pin 3): Single-Ended Input for the RF Signal. This pin
is internally connected to the primary side of the RF input
transformer, which has low DC resistance to ground. If
the RF source is not DC blocked, then a series blocking
capacitor must be used. The RF input is internally matched
from 1.7GHz to 3GHz. Operation down to 400MHz or up
to 3700MHz is possible with simple external matching.
EN (Pin 5): Enable Pin. When the input enable voltage is
higher than 3V, the mixer circuits supplied through Pins 6,
7, 10 and 11 are enabled. When the input voltage is less
than 0.3V, all circuits are disabled. Typical input current
is 50μA for EN = 5V and 0μA when EN = 0V. The EN pin
should not be left fl oating. Under no conditions should the
EN pin voltage exceed VCC + 0.3V, even at start-up.
VCC2 (Pin 6): Power Supply Pin for the Bias Circuits.
Typical current consumption is 2.8mA. This pin should
be externally connected to the VCC1 pin and decoupled
with 1000pF and 1μF capacitors.
VCC1 (Pin 7): Power Supply Pin for the LO Buffer Circuits.
Typical current consumption is 23.2mA. This pin should
be externally connected to the VCC2 pin and decoupled
with 1000pF and 1μF capacitors.
GND (Pins 9, 12): Ground. These pins are internally
connected to the backside ground for improved isola-
tion. They should be connected to the RF ground on the
circuit board, although they are not intended to replace
the primary grounding through the backside contact of
the package.
IF–, IF+ (Pins 10, 11): Differential Outputs for the IF
Signal. An impedance transformation may be required to
match the outputs. These pins must be connected to VCC
through impedance matching inductors, RF chokes or a
transformer center tap.
LO (Pin 15): Single-Ended Input for the Local Oscillator
Signal. This pin is internally connected to the primary side
of the LO transformer, which is internally DC blocked. An
external blocking capacitor is not required. The LO input is
internally matched from 1.2GHz to 5GHz. Operation down
to 380MHz is possible with simple external matching.
Exposed Pad (Pin 17): Circuit Ground Return for the
Entire IC. This must be soldered to the printed circuit
board ground plane.
BLOCK DIAGRAM
15
7
11
3
65
10
DOUBLE-BALANCED
MIXER
LINEAR
AMPLIFIER
LIMITING
AMPLIFIERS
LO
VCC2 VCC1
EN
IF+
12
GND
17
EXPOSED
PAD
IF–
9
GND
5527 BD
BIAS
RF
VCC1
REGULATOR
LT5527
8
5527fa
TEST CIRCUITS
IFOUT
240MHz
5527 F01
16 15 14 13
56 78
12
11
10
9
NC NC
GND
GND
EN
EN
VCC2 VCC1
NC
RF
LO NC
NC
1
2
3
4
EXTERNAL MATCHING
FOR LOW FREQUENCY
LO ONLY
NC
NC
IF+
IF–
RFIN
LOIN
L1 T1
L2
C4
ZO
50Ω
C1 C2
C3
3
VCC
GND
LT5527
L4
C5
L (mm)
EXTERNAL MATCHING
FOR LOW BAND OR
HIGH BAND ONLY
RF
GND
GND
BIAS
ER = 4.4
0.018"
0.018"
0.062"
2
1
4
5
••
IFOUT
240MHz
5527 F02
16 15 14 13
56 78
12
11
10
9
NC NC
GND
GND
EN
EN
VCC2 VCC1
NC
RF
LO NC
NC
1
2
3
4
EXTERNAL MATCHING
FOR LOW FREQUENCY
LO ONLY
NC
NC
IF+
IF–
RFIN
LOIN
L1
L2
L3
C4
ZO
50Ω
C1 C2
C6
C3
C7
DISCRETE
IF BALUN
VCC
GND
LT5527
L4
C5
L (mm)
EXTERNAL MATCHING
FOR LOW BAND OR
HIGH BAND ONLY
Figure 1. Downmixer Test Schematic—Standard IF Matching (240MHz IF)
Figure 2. Downmixer Test Schematic—Discrete IF Balun Matching (240MHz IF)
APPLICATION LO MATCH RF MATCH
RF LO L4 C4 L C5
450MHz High Side 6.8nH 10pF 4.5mm 12pF
900MHz Low Side 3.9nH 5.6pF 1.3mm 3.9pF
900MHz High Side — 2.7pF 1.3mm 3.9pF
3500MHz Low Side — — 4.5mm 0.5pF
REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER
C1 1000pF 0402 AVX 04025C102JAT L4, C4, C5 0402 See Applications Information
C2 1μF 0603 AVX 0603ZD105KAT L1, L2 82nH 0603 Toko LLQ1608-A82N
C3 2.7pF 0402 AVX 04025A2R7CAT T1 4:1 M/A-Com ETC4-1-2 (2MHz to 800MHz)
REF DES VALUE SIZE PART NUMBER REF DES VALUE SIZE PART NUMBER
C1, C3 1000pF 0402 AVX 04025C102JAT L4, C4, C5 0402 See Applications Information
C2 1μF 0603 AVX 0603ZD105KAT L1, L2 100nH 0603 Toko LLQ1608-AR10
C6, C7 4.7pF 0402 AVX 04025A4R7CAT L3 220nH 0603 Toko LLQ1608-AR22
LT5527
9
5527fa
APPLICATIONS INFORMATION
Introduction
The LT5527 consists of a high linearity double-balanced
mixer, RF buffer amplifi er, high speed limiting LO buffer
amplifi er and bias/enable circuits. The RF and LO inputs
are both single ended. The IF output is differential. Low
side or high side LO injection can be used.
Two evaluation circuits are available. The standard evalua-
tion circuit, shown in Figure 1, incorporates transformer-
based IF matching and is intended for applications that
require the lowest LO-IF leakage levels and the widest
IF bandwidth. The second evaluation circuit, shown in
Figure 2, replaces the IF transformer with a discrete IF
balun for reduced solution cost and size. The discrete
IF balun delivers comparable noise fi gure and linearity,
higher conversion gain, but degraded LO-IF leakage and
reduced IF bandwidth.
RF Input Port
The mixer’s RF input, shown in Figure 3, consists of an
integrated transformer and a high linearity differential
amplifi er. The primary terminals of the transformer are
connected to the RF input pin (Pin 3) and ground. The
secondary side of the transformer is internally connected
to the amplifi er’s differential inputs.
One terminal of the transformer’s primary is internally
grounded. If the RF source has DC voltage present, then
a coupling capacitor must be used in series with the RF
input pin.
The RF input is internally matched from 1.7GHz to 3GHz,
requiring no external components over this frequency
range. The input return loss, shown in Figure 4a, is typi-
cally 10dB at the band edges. The input match at the lower
band edge can be optimized with a series 2.7pF capacitor
at Pin 3, which improves the 1.7GHz return loss to greater
than 20dB. Likewise, the 2.7GHz match can be improved
to greater than 30dB with a series 1.5nH inductor. A series
1.5nH/2.7pF network will simultaneously optimize the lower
and upper band edges and expand the RF input bandwidth
to 1.1GHz-3.3GHz. Measured RF input return losses for
these three cases are also plotted in Figure 4a.
Alternatively, the input match can be shifted down, as low
as 400MHz or up to 3700MHz, by adding a shunt capacitor
(C5) to the RF input. A 450MHz input match is realized with
C5 = 12pF, located 4.5mm away from Pin 3 on the evaluation
board’s 50Ω input transmission line. A 900MHz input match
requires C5 = 3.9pF, located at 1.3mm. A 3500MHz input
match is realized with C5 = 0.5pF, located at 4.5mm. This
Figure 3. RF Input Schematic Figure 4. RF Input Return Loss With
and Without External Matching
(4b) Series Shunt Matching
(4a) Series Reactance Matching
RFIN ZO= 50Ω
L = L (mm)
C5
RF
5527 F03
EXTERNAL MATCHING
FOR LOW BAND OR
HIGH BAND ONLY TO
MIXER
3
FREQUENCY (GHz)
0.2
–30
RF PORT RETURN LOSS (dB)
–25
–20
–15
–10
1.2 2.2 3.2 4.2
5527 F04a
–5
0
0.7 1.7 2.7 3.7
SERIES 1.5nH
SERIES 2.7pF
NO EXTERNAL
MATCHING
SERIES 1.5nH
SERIES 2.7pF
RF FREQUENCY (GHz)
0.2
–30
RF PORT RETURN LOSS (dB)
–25
–20
–15
–10
1.2 2.2 3.2 4.2
5527 F04b
–5
0
0.7 1.7 2.7 3.7
NO EXTERNAL
MATCHING
900MHz
C5 = 3.9pF
L = 1.3mm
450MHz
C5 = 12pF
L = 4.5mm
3.5GHz
C5 = 0.5pF
L = 4.5mm
LT5527
10
5527fa
APPLICATIONS INFORMATION
series transmission line/shunt capacitor matching topol-
ogy allows the LT5527 to be used for multiple frequency
standards without circuit board layout modifi cations. The
series transmission line can also be replaced with a series
chip inductor for a more compact layout.
Input return loss for these three cases (450MHz, 900MHz
and 3500MHz) are plotted in Figure 4b. The input return
loss with no external matching is repeated in Figure 4b
for comparison.
RF input impedance and S11 versus frequency (with no
external matching) is listed in Table 1 and referenced to
Pin 3. The S11 data can be used with a microwave circuit
simulator to design custom matching networks and simu-
late board-level interfacing to the RF input fi lter.
Table 1. RF Input Impedance vs Frequency
FREQUENCY
(MHz)
INPUT
IMPEDANCE
S11
MAG ANGLE
50 4.8 + j2.6 0.825 173.9
300 9.0 + j11.9 0.708 152.5
450 11.9 + j15.3 0.644 144.3
600 14.3 + j18.2 0.600 137.2
900 19.4 + j23.8 0.529 123.2
1200 26.1 + j29.8 0.467 107.4
1500 37.3 + j33.9 0.386 89.3
1850 57.4 + j29.7 0.275 60.6
2150 71.3 + j10.1 0.193 20.6
2450 64.6 – j13.9 0.175 –36.8
2650 53.0 – j21.8 0.209 –70.3
3000 35.0 – j21.2 0.297 –111.2
3500 20.7 – j9.0 0.431 –155.8
4000 14.2 + j6.2 0.564 164.8
5000 10.4 + j31.9 0.745 113.3
LO Input Port
The mixer’s LO input, shown in Figure 5, consists of an
integrated transformer and high speed limiting differential
amplifi ers. The amplifi ers are designed to precisely drive
the mixer for the highest linearity and the lowest noise
fi gure. An internal DC blocking capacitor in series with the
transformer’s primary eliminates the need for an external
blocking capacitor.
The LO input is internally matched from 1.2GHz to 5GHz, al-
though the maximum useful frequency is limited to 3.5GHz
by the internal amplifi ers. The input match can be shifted
down, as low as 750MHz, with a single shunt capacitor
(C4) on Pin 15. One example is plotted in Figure 6 where
C4 = 2.7pF produces an 850MHz to 1.2GHz match.
LO input matching below 750MHz requires the series induc-
tor (L4)/shunt capacitor (C4) network shown in Figure 5.
Two examples are plotted in Figure 6 where L4 = 3.9nH/C4
= 5.6pF produces a 650MHz to 830MHz match and L4 =
6.8nH/C4 = 10pF produces a 540MHz to 640MHz match.
The evaluation boards do not include pads for L4, so the
circuit trace needs to be cut near Pin 15 to insert L4. A low
cost multilayer chip inductor is adequate for L4.
The optimum LO drive is –3dBm for LO frequencies above
1.2GHz, although the amplifi ers are designed to accom-
modate several dB of LO input power variation without
signifi cant mixer performance variation. Below 1.2GHz,
Figure 5. LO Input Schematic
Figure 6. LO Input Return Loss
LOIN
C4
L4 LO
VCC2
VBIAS LIMITER
5527 F05
EXTERNAL
MATCHING
FOR LOW BAND
ONLY TO
MIXER
15
LO FREQUENCY (GHz)
0.1
–30
LO PORT RETURN LOSS (dB)
–25
–20
–15
–10
0
15
5527 F06
–5 L4 = 6.8nH
C4 = 10pF
L4 = 3.9nH
C4 = 5.6pF
L4 = 0nH
C4 = 2.7pF
NO
EXTERNAL
MATCHING
LT5527
11
5527fa
0dBm LO drive is recommended for optimum noise fi gure,
although –3dBm will still deliver good conversion gain
and linearity.
Custom matching networks can be designed using the port
impedance data listed in Table 2. This data is referenced
to the LO pin with no external matching.
Table 2. LO Input Impedance vs Frequency
FREQUENCY
(MHz)
INPUT
IMPEDANCE
S11
MAG ANGLE
50 30.4 – j355.7 0.977 –15.9
300 8.7 – j52.2 0.847 –86.7
450 9.4 – j25.4 0.740 –124.8
600 11.5 – j8.9 0.635 –158.7
900 19.7 + j12.8 0.463 146.7
1200 34.3 + j24.3 0.330 106.9
1500 49.8 + j21.3 0.209 78.5
1850 53.8 + j8.9 0.093 61.7
2150 50.4 + j3.2 0.032 80.5
2450 45.1 + j0.3 0.052 176.5
2650 41.1 + j2.4 0.101 163.1
3000 41.9 + j8.1 0.124 129.8
3500 49.0 + j12.0 0.120 87.9
4000 55.4 + j8.6 0.096 53.2
5000 33.2 + j8.7 0.226 146.7
IF Output Port
The IF outputs, IF+ and IF–, are internally connected to the
collectors of the mixer switching transistors (see Figure 7).
Both pins must be biased at the supply voltage, which
can be applied through the center tap of a transformer or
through matching inductors. Each IF pin draws 26mA of
supply current (52mA total). For optimum single-ended
performance, these differential outputs should be com-
bined externally through an IF transformer or a discrete IF
balun circuit. The standard evaluation board (see Figure
1) includes an IF transformer for impedance transforma-
tion and differential to single-ended transformation. A
second evaluation board (see Figure 2) realizes the same
functionality with a discrete IF balun circuit.
The IF output impedance can be modeled as 415Ω in parallel
with 2.5pF at low frequencies. An equivalent small-signal
model (including bondwire inductance) is shown in Figure
APPLICATIONS INFORMATION
Figure 7. IF Output with External Matching
Figure 8. IF Output Small-Signal Model
8. Frequency-dependent differential IF output impedance
is listed in Table 3. This data is referenced to the package
pins (with no external components) and includes the ef-
fects of IC and package parasitics. The IF output can be
matched for IF frequencies as low as several kHz or as
high as 600MHz.
Table 3. IF Output Impedance vs Frequency
FREQUENCY (MHz)
DIFFERENTIAL OUTPUT
IMPEDANCE (RIF || XIF)
1 415||-j64k
10 415||-j6.4k
70 415||-j909
140 413||-j453
240 407||-j264
300 403||-j211
380 395||-j165
450 387||-j138
500 381||-j124
The following three methods of differential to single-ended
IF matching will be described:
• Direct 8:1 transformer
• Lowpass matching + 4:1 transformer
• Discrete IF balun
11
10
IF+L1 4:1
L2
5527 F07
IF–
VCC
C3 VCC
IFOUT
50Ω
11
10
IF+
0.7nH
0.7nH
5527 F08
IF–
2.5pF
RS
415Ω
LT5527
12
5527fa
Direct 8:1 IF Transformer Matching
For IF frequencies below 100MHz, the simplest IF matching
technique is an 8:1 transformer connected across the IF
pins. The transformer will perform impedance transfor-
mation and provide a single-ended 50Ω output. No other
matching is required. Measured performance using this
technique is shown in Figure 9. This matching is easily
implemented on the standard evaluation board by short-
ing across the pads for L1 and L2 and replacing the 4:1
transformer with an 8:1 (C3 not installed).
APPLICATIONS INFORMATION
frequencies are listed in Table 4. High-Q wire-wound chip
inductors (L1 and L2) improve the mixer’s conversion gain
by a few tenths of a dB, but have little effect on linearity.
Measured output return losses for each case are plotted
in Figure 10 for the simple 8:1 transformer method and
for the lowpass/4:1 transformer method.
Table 4. IF Matching Element Values
PLOT
IF FREQUENCY
(MHz)
L1, L2
(nH)
C3
(pF)
IF
TRANSFORMER
1 1 to 100 Short — TC8-1 (8:1)
2 140 120 — ETC4-1-2 (4:1)
3 190 110 2.7 ETC4-1-2 (4:1)
4 240 82 2.7 ETC4-1-2 (4:1)
5 380 56 2.2 ETC4-1-2 (4:1)
6 450 43 2.2 ETC4-1-2 (4:1)
Figure 9. Typical Conversion Gain, IIP3 and
SSB NF Using an 8:1 IF Transformer
Figure 10. IF Output Return Losses
with Lowpass/Transformer Matching
Lowpass + 4:1 IF Transformer Matching
The lowest LO-IF leakage and wide IF bandwidth are real-
ized by using the simple, three element lowpass matching
network shown in Figure 7. Matching elements C3, L1 and
L2, in conjunction with the internal 2.5pF capacitance,
form a 400Ω to 200Ω lowpass matching network which
is tuned to the desired IF frequency. The 4:1 transformer
then transforms the 200Ω differential output to a 50Ω
single-ended output.
This matching network is most suitable for IF frequencies
above 40MHz or so. Below 40MHz, the value of the series
inductors (L1 and L2) becomes unreasonably high, and
could cause stability problems, depending on the induc-
tor value and parasitics. Therefore, the 8:1 transformer
technique is recommended for low IF frequencies.
Suggested lowpass matching element values for several IF
Discrete IF Balun Matching
For many applications, it is possible to replace the IF
transformer with the discrete IF balun shown in Figure 2.
The values of L1, L2, C6 and C7 are calculated to realize
a 180 degree phase shift at the desired IF frequency and
provide a 50Ω single-ended output, using the equations
listed below. Inductor L3 is calculated to cancel the in-
ternal 2.5pF capacitance. L3 also supplies bias voltage
to the IF+ pin. Low cost multilayer chip inductors are
adequate for L1 and L2. A high Q wire-wound chip induc-
tor is recommended for L3 to maximize conversion gain
and minimize DC voltage drop to the IF+ pin. C3 is a DC
blocking capacitor.
IF OUTPUT FREQUENCY (MHz)
10
GC (dB), IIP3 (dBm), SSB NF (dB)
13
17
21
25
50
5527 F09
9
5
11
15
19
23
7
3
120 30 40 60 70 80 90 100
RF = 900MHz
HIGH SIDE LO AT 0dBm
VCC = 5V DC
TA = 25°C
C4 = 2.7pF, C5 = 3.9pF
IIP3
SSB NF
GC
IF FREQUENCY (MHz)
–30
IF PORT RETURN LOSS (dB)
–20
–10
0
–25
–15
–5
100 200 300 400
5527 F10
50050
1
2
3
45
6
0 150 250 350 450
LT5527
13
5527fa
APPLICATIONS INFORMATION
LL RR
CC RR
LX
IF OUT
IF
IF IF OUT
IF
IF
12
67 1
3
,•
,••
=
=
=
ω
ω
ω
Compared to the lowpass/4:1 transformer matching tech-
nique, this network delivers approximately 0.8dB higher
conversion gain (since the IF transformer loss is elimi-
nated) and comparable noise fi gure and IIP3. At a ±15%
offset from the IF center frequency, conversion gain and
noise fi gure degrade about 1dB. Beyond ±15%, conver-
sion gain decreases gradually but noise fi gure increases
rapidly. IIP3 is less sensitive to bandwidth. Other than IF
bandwidth, the most signifi cant difference is LO-IF leakage,
which degrades to approximately –38dBm compared to
the superior performance realized with the lowpass/4:1
transformer matching.
Discrete IF balun element values for four common IF fre-
quencies are listed in Table 5. The corresponding measured
IF output return losses are shown in Figure 11. The values
listed in Table 5 differ from the calculated values slightly
due to circuit board and component parasitics. Typical
conversion gain, IIP3 and LO-IF leakage, versus RF input
frequency, for all four IF frequency examples is shown in
Figure 12. Typical conversion gain, IIP3 and noise fi gure
versus IF output frequency for the same circuits are shown
in Figure 13.
Table 5. Discrete IF Balun Element Values (ROUT = 50Ω)
IF FREQUENCY
(MHz)
L1, L2
(nH)
C6, C7
(pF)
L3
(nH)
190 120 6.8 220
240 100 4.7 220
380 56 3 68
450 47 2.7 47
For fully differential IF architectures, the IF transformer can
be eliminated. An example is shown in Figure 14, where
the mixer’s IF output is matched directly into a SAW fi lter.
Supply voltage to the mixer’s IF pins is applied through
Figure 11. IF Output Return Losses with Discrete Balun Matching
Figure 12. Conversion Gain, IIP3 and LO-IF Leakage vs RF Input
Frequency Using Discrete IF Balun Matching
Figure 13. Conversion Gain, IIP3 and SSB NF vs IF Output
Frequency Using Discrete IF Balun Matching
IF FREQUENCY (MHz)
–30
IF PORT RETURN LOSS (dB)
–20
–10
0
–25
–15
–5
150 250 350 450
5527 F11
55010050 200 300 400 500
190MHz
240MHz 380MHz
450MHz
RF INPUT FREQUENCY (MHz)
1700
GC (dB), IIP3 (dBm)
LO-IF LEAKAGE (dBm)
14
18
22
26
2500
5527 F12
10
6
12
16
20
24
8
4
2
–30
–20
–10
0
–40
–50
–60
1900 2100 2300 2700
190IF
240IF
380IF
450IF
LOW SIDE LO (–3dBm)
TA = 25°C
IIP3
LO-IF
GC
IF OUTPUT FREQUENCY (MHz)
150
GC, SSB NF (dB), IIP3 (dBm)
12
18
20
550
5527 F13
10
8
0250 350 450
200 300 400 500
4
26
24
22 IIP3
GC
16
14
6
2
190IF
240IF
380IF
450IF
LOW SIDE LO (–3dBm)
TA = 25°C
SSB NF
LT5527
14
5527fa
APPLICATIONS INFORMATION
matching inductors in a band-pass IF matching network.
The values of L1, L2 and C3 are calculated to resonate at
the desired IF frequency with a quality factor that satisfi es
the required IF bandwidth. The L and C values are then
adjusted to account for the mixer’s internal 2.5pF capaci-
tance and the SAW fi lter’s input capacitance. In this case,
the differential IF output impedance is 400Ω since the
bandpass network does not transform the impedance.
Additional matching elements may be required if the SAW
fi lter’s input impedance is less than or greater than 400Ω.
Contact the factory for application assistance.
IF
AMP
SAW
FILTER
L1
IF+
IF–L2
C3
SUPPLY
DECOUPLING
VCC
5527 F14
Figure 14. Bandpass IF Matching for Differential IF Architectures
Standard Evaluation Board Layout Discrete IF Evaluation Board Layout
LT5527
15
5527fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no representa-
tion that the interconnection of its circuits as described herein will not infringe on existing patent rights.
PACKAGE DESCRIPTION
4.00 ± 0.10
(4 SIDES)
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
PIN 1
TOP MARK
(NOTE 6)
0.55 ± 0.20
1615
1
2
BOTTOM VIEW—EXPOSED PAD
2.15 ± 0.10
(4-SIDES)
0.75 ± 0.05 R = 0.115
TYP
0.30 ± 0.05
0.65 BSC
0.200 REF
0.00 – 0.05
(UF16) QFN 10-04
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
0.72 ±0.05
0.30 ±0.05
0.65 BSC
2.15 ± 0.05
(4 SIDES)
2.90 ± 0.05
4.35 ± 0.05
PACKAGE OUTLINE
PIN 1 NOTCH R = 0.20 TYP
OR 0.35 × 45° CHAMFER
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
LT5527
16
5527fa
Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2005
LT 1108 REV A • PRINTED IN USA
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LTC5507 100kHz to 1000MHz RF Power Detector 100kHz to 1GHz, Temperature Compensated, 2.7V to 6V Supply
LTC5508 300MHz to 7GHz RF Power Detector 44dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5509 300MHz to 3GHz RF Power Detector 36dB Dynamic Range, Low Power Consumption, SC70 Package
LTC5530 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Gain
LTC5531 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Shutdown, Adjustable Offset
LTC5532 300MHz to 7GHz Precision RF Power Detector Precision VOUT Offset Control, Adjustable Gain and Offset
LT5534 50MHz to 3GHz RF Power Detector with 60dB
Dynamic Range
±1dB Output Variation over Temperature, 38ns Response Time
LTC5536 Precision 600MHz to 7GHz RF Detector with Fast
Compatator Output
25ns Response Time, Comparator Reference Input, Latch Enable Input,
–26dBm to +12dBm Input Range
Low Voltage RF Building Block
LT5546 500MHz Quadrature Demodulator with VGA and
17MHz Baseband Bandwidth
17MHz Baseband Bandwidth, 40MHz to 500MHz IF, 1.8V to 5.25V Supply,
–7dB to 56dB Linear Power Gain
Wide Bandwidth ADCs
LTC1749 12-Bit, 80Msps 500MHz BW S/H, 71.8dB SNR
LTC1750 14-Bit, 80Msps 500MHz BW S/H, 75.5dB SNR
