TSHA440. Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 % radiant power improvement. 94 8398 Features * Extra high radiant power * High radiant intensity for long transmission distance e2 * Suitable for high pulse current operation * Standard T-1( 3 mm) package for low space application * Angle of half intensity = 20 * Peak wavelength p = 875 nm * High reliability * Good spectral matching to Si photodetectors * Lead (Pb)-free component * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications * Infrared remote control and free air transmission systems with high power requirements in combination with PIN photodiodes or phototransistors. * Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Reverse voltage Parameter Test condition VR 5 Unit V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 s IFM 200 Surge forward current tp = 100 s IFSM 2 A PV 180 mW Power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ ambient Document Number 81017 Rev. 1.5, 23-Feb-07 t 5 sec, 2 mm from case Tj 100 C Tamb - 55 to + 100 C Tstg - 55 to + 100 C Tsd 260 C RthJA 450 K/W www.vishay.com 1 TSHA440. Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Forward voltage Typ. Max Unit IF = 100 mA, tp = 20 ms Test condition Symbol VF 1.5 1.8 V IF = 1.5 A, tp = 100 s VF 3.2 4.9 V TKVF - 1.6 Temp. coefficient of VF IF = 100 mA Reverse current VR = 5 V IR Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj Min mV/K 100 A 20 pF Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Temp. coefficient of e Test condition Symbol Min Typ. Max Unit IF = 100 mA TKe - 0.7 %/K 20 deg Peak wavelength IF = 100 mA p 875 nm Angle of half intensity Spectral bandwidth IF = 100 mA 80 nm Temp. coefficient of p IF = 100 mA TKp 0.2 nm/K Rise time IF = 100 mA tr 600 ns IF = 1.5 A tr 300 ns Fall time IF = 100 mA tf 600 ns IF = 1.5 A tf 300 ns 1.8 mm Virtual source diameter Type Dedicated Characteristics Tamb = 25 C, unless otherwise specified Parameter Radiant intensity Test condition IF = 100 mA, tp = 20 ms IF = 1.5 mA, tp = 100 s Radiant power www.vishay.com 2 IF = 100 mA, tp = 20 ms Part Symbol Min Typ. Max Unit TSHA4400 Ie 12 20 60 mW/sr TSHA4401 Ie 16 30 60 mW/sr TSHA4400 Ie 140 240 mW/sr TSHA4401 Ie 190 360 mW/sr TSHA4400 e 20 mW TSHA4401 e 24 mW Document Number 81017 Rev. 1.5, 23-Feb-07 TSHA440. Vishay Semiconductors Typical Characteristics Tamb = 25 C, unless otherwise specified 10 4 PV - Power Dissipation (mW) 250 IF - Forward Current (mA) 200 150 R thJA 100 50 0 0 20 40 60 80 Tamb - Ambient Temperature (C) 12789 0 100 75 50 25 1 2 3 4 V F - Forward Voltage (V) Figure 4. Forward Current vs. Forward Voltage V Frel - Relative Forward Voltage (V) IF - Forward Current (mA) 125 0 1.2 1.1 IF = 10 mA 1.0 0.9 0.8 0.7 0 20 40 60 80 0 100 Tamb - Ambient Temperature (C) 94 7941 20 40 60 80 100 T amb - Ambient Temperature (C) 94 7990 Figure 2. Forward Current vs. Ambient Temperature Figure 5. Relative Forward Voltage vs. Ambient Temperature 10 1 1000 Ie - Radiant Intensity (mW/sr) IF - Forward Current (A) 10 2 94 8005 Figure 1. Power Dissipation vs. Ambient Temperature t p /T = 0.01, I FM = 2 A 0.02 10 0 10 3 10 1 100 t p = 100 s t p /T = 0.001 0.05 0.1 0.2 TSHA 4401 100 TSHA 4400 10 0.5 10 -1 10 -2 94 7947 1 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 2 Figure 3. Pulse Forward Current vs. Pulse Duration Document Number 81017 Rev. 1.5, 23-Feb-07 10 0 94 7942 10 1 10 2 10 3 I F - Forward Current (mA) 10 4 Figure 6. Radiant Intensity vs. Forward Current www.vishay.com 3 TSHA440. Vishay Semiconductors 0 10 20 30 I e rel - Relative Radiant Intensity e - Radiant Power (mW) 1000 100 10 1 40 1.0 0.9 50 0.8 60 0.7 70 80 0.1 10 0 10 1 10 2 10 3 I F - Forward Current (mA) 94 7943 0.6 10 4 0.4 0.2 0 0.2 0.4 0.6 94 7944 Figure 7. Radiant Power vs. Forward Current Figure 10. Relative Radiant Intensity vs. Angular Displacement 1.6 I e rel ; e rel 1.2 I F = 20 mA 0.8 0.4 0 -10 0 10 50 100 140 Tamb - Ambient Temperature (C) 94 8020 Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature e - Relative Radiant Power 1.25 1.0 0.75 0.5 0.25 I F = 100 mA e ( ) rel = e ( ) / e ( p ) 0 780 94 8000 880 980 - Wavelenght (nm) Figure 9. Relative Radiant Power vs. Wavelength www.vishay.com 4 Document Number 81017 Rev. 1.5, 23-Feb-07 TSHA440. Vishay Semiconductors Package Dimensions in mm 95 10951 Document Number 81017 Rev. 1.5, 23-Feb-07 www.vishay.com 5 TSHA440. Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 81017 Rev. 1.5, 23-Feb-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1