TSHA440.
Document Number 81017
Rev. 1.5, 23-Feb-07
Vishay Semiconductors
www.vishay.com
1
94 8398
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
The TSHA44..series are high efficiency infrared emit-
ting diodes in GaAlAs on GaAlAs technology, molded
in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs tech-
nology these high intensity emitters feature about
50 % radiant power improvement.
Features
• Extra high radiant power
• High radiant intensity for long transmis-
sion distance
• Suitable for high pulse current operation
• Standard T-1(∅ 3 mm) package for low space
application
• Angle of half intensity ϕ = ± 20°
• Peak wavelength λp = 875 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Infrared remote control and free air transmission
systems with high power requirements in combi-
nation with PIN photodiodes or phototransistors.
• Because of the very low radiance absorption in
glass at the wavelength of 875 nm, this emitter
series is also suitable for systems with panes in
the transmission range between emitter and
detector.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 2A
Power dissipation PV180 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 55 to + 100 °C
Storage temperature range Tstg - 55 to + 100 °C
Soldering temperature t ≤ 5 sec, 2 mm from case Tsd 260 °C
Thermal resistance junction/
ambient
RthJA 450 K/W
e2
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Document Number 81017
Rev. 1.5, 23-Feb-07
TSHA440.
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Type Dedicated Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Forward voltage IF = 100 mA, tp = 20 ms VF1.5 1.8 V
IF = 1.5 A, tp = 100 µs VF3.2 4.9 V
Temp. coefficient of VFIF = 100 mA TKVF - 1.6 mV/K
Reverse current VR = 5 V IR100 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj20 pF
Parameter Test condition Symbol Min Typ. Max Unit
Temp. coefficient of φeIF = 100 mA TKφe- 0.7 %/K
Angle of half intensity ϕ± 20 deg
Peak wavelength IF = 100 mA λp875 nm
Spectral bandwidth IF = 100 mA Δλ 80 nm
Temp. coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr600 ns
IF = 1.5 A tr300 ns
Fall time IF = 100 mA tf600 ns
IF = 1.5 A tf300 ns
Virtual source diameter ∅1.8 mm
Parameter Test condition Part Symbol Min Typ. Max Unit
Radiant intensity IF = 100 mA, tp = 20 ms TSHA4400 Ie12 20 60 mW/sr
TSHA4401 Ie16 30 60 mW/sr
IF = 1.5 mA, tp = 100 µs TSHA4400 Ie140 240 mW/sr
TSHA4401 Ie190 360 mW/sr
Radiant power IF = 100 mA, tp = 20 ms TSHA4400 φe20 mW
TSHA4401 φe24 mW
TSHA440.
Document Number 81017
Rev. 1.5, 23-Feb-07
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Figure 1. Power Dissipation vs. Ambient Temperature
Figure 2. Forward Current vs. Ambient Temperature
Figure 3. Pulse Forward Current vs. Pulse Duration
0
50
100
150
200
250
P - Power Dissipation (mW)
V
Tamb- Ambient Temperature (°C)
12789
RthJA
40 1008060200
0
25
50
75
100
125
I - Forward Current (mA)
F
94 7941
T
amb
- Ambient Temperature (°C)
40 1008060200
t
p- Pulse Duration (ms)
94 7947
10 0
10 1
101
10-1
10 -1 10 010 2
10 -2
tp/T = 0.01, I FM =2A
0.05
0.1
0.5
0.02
0.2
I - Forward Current (A)
F
Figure 4. Forward Current vs. Forward Voltage
Figure 5. Relative Forward Voltage vs. Ambient Temperature
Figure 6. Radiant Intensity vs. Forward Current
VF- Forward Voltage (V)
94 8005
101
102
103
104
tp= 100 µs
tp/T = 0.001
43210
I - Forward Current (mA)
F
0.7
0.8
0.9
1.0
1.1
1.2
V- Relative Forward Voltage (V)
Frel
94 7990
T
amb
- Ambient Temperature (°C)
100806040200
I
F
= 10 mA
I
F- Forward Current (mA)
94 7942
103
101102104
100
1
10
100
1000
I - Radiant Intensity (mW/sr)
e
TSHA 4401
TSHA 4400
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Document Number 81017
Rev. 1.5, 23-Feb-07
TSHA440.
Vishay Semiconductors
Figure 7. Radiant Power vs. Forward Current
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Figure 9. Relative Radiant Power vs. Wavelength
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
94 7943
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
-10 10 500 100
0
0.4
0.8
1.2
1.6
I;
e rel e rel
140
94 8020
IF= 20 mA
Φ
Tamb- Ambient Temperature (°C)
780880
λ- Wavelenght (nm)
980
94 8000
- Relative Radiant Power
e
0
0.25
0.5
0.75
1.0
1.25
I
F
= 100 mA
pe
Φ
ee )/
λ
()
λ
() rel =
λΦΦ (
Φ
Figure 10. Relative Radiant Intensity vs. Angular Displacement
0.4 0.2 0 0.2 0.4
I - Relative Radiant Intensity
e rel
0.6
94 7944
0.6
0.9
0.8
0°°°
30°
10 20
40°
50°
60°
70°
80°
0.7
1.0
TSHA440.
Document Number 81017
Rev. 1.5, 23-Feb-07
Vishay Semiconductors
www.vishay.com
5
Package Dimensions in mm
95 10951
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Document Number 81017
Rev. 1.5, 23-Feb-07
TSHA440.
Vishay Semiconductors
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It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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