OPTOELECTRONICS REFLECTIVE OBJECT SENSORS E DIMENSIONS _ 420 (10.67) + + 328 (8.33) .062 R (A) es NOM (K) NS To . 226 (5.74) | of. he i _ HFA 7] (or 150 (3.81) NOM .150 (3.81) z POINT OF MIN OPTIMUM RESPONSE 703 ty 06) t 373 (9.47) a Jom 903 (22.94) ~ .603 (15.32) i q 210 (5.33) | = S$T2178 (C) COLLECTOR (E) EMITTER (K) CATHODE (A) ANODE NOTES: 1. CATHODE AND EMITTER LEADS ARE .050 NOM SHORTER THAN ANODE AND COLLECTOR LEADS. . DIMENSIONS ARE IN INCHES (mm). . TOLERANCE IS +.010 [.25) UNLESS OTHERWISE SPECIFIED. won QRC1113 The QRC1113 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200 in diameter. Phototransistor output B High Sensitivity = Low cost plastic housingREFLECTIVE OBJECT SENSORS OPTOELECTRONICS Storage Temperature .... 00. nee e nee eter n eee e net ene eng 40C to + 85C Operating Temperature 6... ce renee en nee ened e nent teens -40C to + 85C Soldering: Lead Temperature (Iron) 2... nee EEE eet e renter 240C for 5 sec. Lead Temperature (FIOW) 00... eee en nn nee nee nn ee 260C for 10 sec. ?* INPUT DIODE Continuous Forward Current 2.0.0... ee eee etn ene ene a tet eee 50 mA Reverse Voltage 26.6. ne REE E EEE ET EEE EEE EEE Eee enn e tenes 5.0 Volts Power Dissipation .....0.0 0.02 ene En EE EERE REDE n nent n tenet e ee 100 mw" OUTPUT TRANSISTOR Collector-Emitter Voltage 2.00 nen ene e EE ELT CREE tenes 30 Volts Emitter-Collector Voltage... EE ERED Ene enn Dennen eens 5.0 Volts Collector Current 2.0.00. nen enn EEE ene e eee Dende ee terete ees 40 mA Power Dissipation 0.0.0.0 0 00 EOL EOE EEE Eee nena 100 mw _ ELECTRICAL CHARACTERISTIC C Unless Otherwise Specified) PARAMETER SYMBOL TEST CONDITIONS INPUT DIODE Forward Voltage Vv. _ 1.70 v I; = 40mA Reverse Leakage Current Ih _ 100 BA Ve, = 2.0V OUTPUT TRANSISTOR Emitter-Collector Breakdown BVico 5 _ v le = 100uA, Ee = 0 Collector-Emitter Breakdown BV ceo 30 _ Vv c= 1.0 mA, Ee =0 Collector-Emitter Leakage loeo _ 100 nA Voz = 10.0 V, Ee = 0 COUPLED On-State Collector Current loony 200 _ mA |; = 40 MA, Vee = 5 V, D = .150767 Crosstalk lex _ 1.0 pA Ir = 40 mA, Ve = 5 Ve Saturation Voltage Veegsan 0.40 Vv |; = 40 mA, |, = .1 mA, D = 15075 Derate power dissipation linearly 1.67 mW/C above 25C. RMA flux is recommended. . Methanol or lsopropy! alcohols are recommended as cleaning agents. . Soldering iron ie (1.6mm) from housing. . Dis the distance from the assembly face to the reflective surface. . Cross talk is the photocurrent measured with current to the input diode and no reflecting surface. . Measured using Eastman Kodak neutral test card with 90% diffused reflecting surface. NOOR