ON Semiconductor Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit VCES 30 Vdc Collector-Base Voltage VCB 40 Vdc Emitter-Base Voltage VEB 10 Vdc Collector Current -- Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25C Derate above 25C PD 625 12 mW mW/C Total Power Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -55 to +150 C Symbol Max Unit Collector-Emitter Voltage Operating and Storage Junction Temperature Range 1 2 3 CASE 29-11, STYLE 17 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W COLLECTOR 1 BASE 2 EMITTER 3 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 2.0 mAdc, VBE = 0) V(BR)CES 30 -- -- Vdc Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO 40 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 100 nAdc, IC = 0) V(BR)EBO 10 -- -- Vdc Collector Cutoff Current (VCE = 30 Vdc) ICES -- -- 500 nAdc Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO -- -- 100 nAdc Emitter Cutoff Current (VEB = 10 Vdc, IC = 0) IEBO -- -- 100 nAdc OFF CHARACTERISTICS Semiconductor Components Industries, LLC, 2001 May, 2001 - Rev. 2 1 Publication Order Number: BC517/D BC517 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Symbol Min Typ Max Unit hFE 30,000 -- -- -- Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) -- -- 1.0 Vdc Base-Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) -- -- 1.4 Vdc fT -- 200 -- MHz Characteristic ON CHARACTERISTICS(1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width 2.0%. 2. fT = |hfe| * ftest RS in en IDEAL TRANSISTOR Figure 1. Transistor Noise Model http://onsemi.com 2 BC517 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25C) 2.0 BANDWIDTH = 1.0 Hz RS 0 200 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 500 100 10 A 50 100 A 20 IC = 1.0 mA 10 5.0 BANDWIDTH = 1.0 Hz 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 A 0.1 0.07 0.05 10 A 0.03 10 20 50 100 200 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 50k 100k 0.02 10 20 50 100 200 14 200 IC = 10 A 70 50 100 A 30 20 10 1.0 mA 1.0 2.0 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.7 kHz 100 50k 100k Figure 3. Noise Current NF, NOISE FIGURE (dB) VT, TOTAL WIDEBAND NOISE VOLTAGE (nV) Figure 2. Noise Voltage 500 1k 2k 5k 10k 20k f, FREQUENCY (Hz) 10 10 A 8.0 100 A 6.0 4.0 IC = 1.0 mA 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) 500 0 1.0 1000 Figure 4. Total Wideband Noise Voltage 2.0 5.0 10 20 50 100 200 RS, SOURCE RESISTANCE (k) Figure 5. Wideband Noise Figure http://onsemi.com 3 500 1000 BC517 SMALL-SIGNAL CHARACTERISTICS 4.0 |h fe |, SMALL-SIGNAL CURRENT GAIN C, CAPACITANCE (pF) 20 TJ = 25C 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 hFE, DC CURRENT GAIN TJ = 125C 100k 70k 50k 25C 30k 20k 10k 7.0k 5.0k -55C 3.0k 2.0k 5.0 7.0 10 VCE = 5.0 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RV, TEMPERATURE COEFFICIENTS (mV/C) TJ = 25C V, VOLTAGE (VOLTS) 1.4 VBE(sat) @ IC/IB = 1000 1.2 VBE(on) @ VCE = 5.0 V 1.0 VCE(sat) @ IC/IB = 1000 5.0 7.0 10 0.5 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 TJ = 25C 2.5 IC = 10 mA 50 mA 250 mA 500 mA 2.0 1.5 1.0 0.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (A) 500 1000 Figure 9. Collector Saturation Region 1.6 0.6 2.0 3.0 Figure 8. DC Current Gain 0.8 1.0 Figure 7. High Frequency Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. Capacitance 200k VCE = 5.0 V f = 100 MHz TJ = 25C 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 -1.0 -2.0 *APPLIES FOR IC/IB hFE/3.0 25C TO 125C *RVC FOR VCE(sat) -55C TO 25C -3.0 25C TO 125C -4.0 VB FOR VBE -5.0 -55C TO 25C -6.0 5.0 7.0 10 Figure 10. "On" Voltages 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) Figure 11. Temperature Coefficients http://onsemi.com 4 500 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 SINGLE PULSE 0.05 0.1 0.07 0.05 SINGLE PULSE 0.03 ZJC(t) = r(t) * RJCTJ(pk) - TC = P(pk) ZJC(t) ZJA(t) = r(t) * RJATJ(pk) - TA = P(pk) ZJA(t) 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0k 2.0k 5.0k 10k Figure 12. Thermal Response 1.0k 700 500 IC, COLLECTOR CURRENT (mA) () RESISTANCE (NORMALIZED) BC517 300 200 FIGURE A 1.0 ms TA = 25C TC = 25C tP 100 s PP 1.0 s 100 70 50 PP t1 30 20 10 0.4 0.6 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 1/f 1.0 2.0 4.0 6.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) t DUTYCYCLE t1f 1 tP PEAK PULSE POWER = PP 40 Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data http://onsemi.com 5 BC517 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X-X 1 N N http://onsemi.com 6 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- BC517 Notes http://onsemi.com 7 BC517 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 8 BC517/D