© Semiconductor Components Industries, LLC, 2008
May, 2008 Rev. 11
1Publication Order Number:
MBR2535CT/D
MBR2535CT, MBR2545CT
MBR2545CT is a Preferred Device
SWITCHMODE]
Power Rectifiers
The MBR2535CT/45CT series uses the Schottky Barrier principle
with a platinum barrier metal. These stateoftheart devices have the
following features:
Features
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
PbFree Packages are Available*
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94 V0 @ 0.125 in
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220AB
CASE 221A
PLASTIC
3
4
1
SCHOTTKY BARRIER
RECTIFIERS
30 AMPERES
35 and 45 VOLTS
1
3
2, 4
2
Preferred devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
B25x5 = Device Code
x = 3 or 4
G = PbFree Package
AKA = Diode Polarity
AY WW
B25x5G
AKA
Device Package Shipping
ORDERING INFORMATION
MBR2535CT TO220 50 Units/Rail
MBR2545CT TO220 50 Units/Rail
MBR2535CTG TO220
(PbFree)
50 Units/Rail
MBR2545CTG TO220
(PbFree)
50 Units/Rail
http://onsemi.com
MBR2535CT, MBR2545CT
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR2535CT
MBR2545CT
VRRM
VRWM
VR35
45
V
Average Rectified Forward Current
(Rated VR, TC = 160°C)
IF(AV) 30 A
Peak Repetitive Forward Current,
per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150°C)
IFRM 30 A
NonRepetitive Peak Surge Current per Diode Leg
(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz)
IFSM 150 A
Peak Repetitive Reverse Surge Current (2.0 s, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg 65 to +175 °C
Operating Junction Temperature (Note 1) TJ65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s
ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
ESD >400
>8000
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RJA.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic Symbol Value Unit
Thermal Resistance,JunctiontoCase
JunctiontoAmbient (Note 2)
RJC
RJA
1.5
50
°C/W
2. When mounted using minimum recommended pad size on FR4 board.
ELECTRICAL CHARACTERISTICS (Per Diode)
Symbol Characteristic Condition Min Typ Max Unit
VFInstantaneous Forward Voltage
(Note 3)
IF = 15 Amp, TJ = 25°C
IF = 15 Amp, TJ = 125°C
IF = 30 Amp, TJ = 25°C
IF = 30 Amp, TJ = 125°C
0.50
0.65
0.62
0.57
0.82
0.72
V
IRInstantaneous Reverse Current
(Note 3)
Rated dc Voltage, TJ = 25°C
Rated dc Voltage, TJ = 125°C
9.0
0.2
25
mA
3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.
MBR2535CT, MBR2545CT
http://onsemi.com
3
110
TC, CASE TEMPERATURE (°C)
20
8.0
4.0
0
TA, AMBIENT TEMPERATURE (°C)
200
48
24
16
8.0
0
40
8.0 160
IF, AVERAGE FORWARD CURRENT (AMPS)
32
16
12
8.0
4.0
0
12
I
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
120 130 160 180 60 80 180
P
20 4024
28
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
4.0 28 32 36
20
24
SQUARE WAVE
dc
SQUARE WAVE
dc
16
12
24
48
28 28
20
12
4.0
100 120 140
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
RATED VR APPLIED
SQUARE WAVE
dc
RATED VOLTAGE APPLIED
RJC = 1.5°C/W
RJA = 16°C/W
(With TO-220 Heat Sink)
RJA = 60°C/W
(No Heat Sink)
SQUARE WAVE
dc
TJ = 125°C
(CAPACITATIVELOAD)
IPK
IAV
+5.0
10
20
(RESISTIVELOAD)
IPK
IAV
+
Figure 1. Typical Forward Voltage, Per Leg Figure 2. Typical Reverse Current, Per Leg
0.60
VF , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
1000
10
VR, REVERSE VOLTAGE (VOLTS)
0
0.2
0.04
0.02
0.002
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
I
1.0
0.2 0.4 0.8 10 20 30 40
0.1
0.4
1.0
0.1
1.0 50
, REVERSE CURRENT (mA)
R
4.0
2.0
10
20
100
40
200
TJ = 125°C
150°C
25°C
TJ = 150°C
125°C
100°C
100
0.01
0.004
25°C
75°C
1.61.2 1.4 1.8
Figure 3. Current Derating, Per Device Figure 4. Current Derating, Per Device
Figure 5. Forward Power Dissipation
140 150 170
32
36
40
44
160
32
36
40
44
MBR2535CT, MBR2545CT
http://onsemi.com
4
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.035 0.64 0.88
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.155 2.80 3.93
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
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USA/Canada
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Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81357733850
MBR2535CT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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