9352 006 80112 - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Preliminary speciﬁcation

Supersedes data of 1997 Jun 11

File under Integrated Circuits, IC01

1997 Aug 14

INTEGRATED CIRCUITS

TDA1561Q

2×23 W high efficiency car radio

power amplifier

1997 Aug 14 2

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

FEATURES

•Low dissipation due to switching from Single-Ended

(SE) to Bridge-Tied Load (BTL) mode

•High Common Mode Rejection Ratio (CMRR)

•Mute/standby/operating/SE-only (mode select pin)

•Zero crossing mute and standby circuit

•Load dump protection circuit

•Short-circuit safe to ground, to supply voltage and

across load

•Loudspeaker protection circuit

•Device switches to single-ended operation at excessive

junction temperatures.

GENERAL DESCRIPTION

The TDA1561Q is a monolithic power amplifier in a 13 lead

single-in-line (SIL) plastic power package. It contains two

identical 23 W amplifiers. The dissipation is minimized by

switching from SE to BTL mode, only when a higher output

voltage swing is needed. The device is primarily

developed for car radio applications.

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VPsupply voltage DC biased 6.0 14.4 18 V

non operating −−30 V

load dump −−50 V

IORM repetitive peak output current −−4A

q(tot) total quiescent current RL=∞−95 150 mA

Istb standby current −150µA

Z

input impedance −60 −kΩ

Pooutput power RL = 4 Ω; EIAJ −36 −W

THD 10% 21 23 −W

Gvvoltage gain 31 32 33 dB

CMRR common mode rejection ratio f = 1 kHz; Rs=0Ω−80 −dB

SVRR supply voltage ripple rejection f = 1 kHz; Rs=0Ω45 55 −dB

∆VODC output offset voltage −−150 mV

αcs channel separation Rs=0kΩ40 60 −dB

∆Gvchannel unbalance −−1dB

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

TDA1561Q DBS13P plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) SOT141-6

1997 Aug 14 3

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, full pagewidth

MLD214

REFERENCE

SOURCES

MUTE/STANDBY

THERMAL/

SHORT-CIRCUIT

PROTECTION

HIGHER

TEMPERATURE

BTL DISABLE

0.5VP

MUTE

IN1

IN2

CIN

MODE

1/2R

GND1

GND2

8OUT2

OUT2

OUT1

TDA1561Q

1997 Aug 14 4

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

PINNING

SYMBOL PIN DESCRIPTION

IN1 1 input 1

HVP2 half supply voltage control input

MODE 3 mute/standby/operating/SE-only

GND1 4 ground 1

OUT1 5 inverting output 1

OUT1 6 non-inverting output 1

VP7 supply voltage

OUT2 8 inverting output 2

OUT2 9 non-inverting output 2

GND2 10 ground 2

C11 11 electrolytic capacitor for

single-ended (SE) mode

CIN 12 common input

IN2 13 input 2

Fig.2 Pin configuration.

handbook, halfpage

MLD215

TDA1561Q

IN1

GND1

OUT1

MODE

OUT1

OUT2

CIN

IN2

GND2

OUT2

1997 Aug 14 5

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

FUNCTIONAL DESCRIPTION

The TDA1561Q contains two identical amplifiers with

differential inputs. At low output power (up to output

amplitudes of 3 V (RMS) at VP= 14.4 V), the device

operates as a normal SE amplifier. When a larger output

voltage swing is needed, the circuit switches internally to

BTL operation.

With a sine wave input signal the dissipation of a

conventional BTL amplifier up to 2 W output power is more

than twice the dissipation of the TDA1561Q (see Fig.9).

In normal use, when the amplifier is driven with music-like

signals, the high (BTL) output power is only needed for a

small percentage of time. Under the assumption that a

music signal has a normal (Gaussian) amplitude

distribution, the dissipation of a conventional BTL amplifier

with the same output power is approximately 70% higher

(see Fig.10).

The heatsink has to be designed for use with music

signals. With such a heatsink, the thermal protection will

disable the BTL mode when the junction temperature

exceeds 145 °C. In this case the output power is limited to

5 W per ampliﬁer.

The gain of each amplifier is internally fixed at 32 dB. With

the MODE pin, the device can be switched to the following

modes:

•Standby with low standby current (<50 µA)

•Mute condition, DC adjusted

•On, operation

•SE-only, operation (BTL disabled).

The device is fully protected against short-circuiting of the

output pins to ground and to the supply voltage. It is also

protected against short-circuiting the loudspeaker and

high junction temperatures. In the event of a permanent

short-circuit condition to ground or the supply voltage, the

output stage will be switched off causing a low dissipation.

With permanent short-circuiting of the loudspeaker, the

output stage will be repeatedly switched on and off.

The duty cycle in the ‘on’ condition is low enough to

prevent excessive dissipation.

To avoid plops during switching from ‘mute’ to ‘on’ or from

‘on’ to ‘mute/standby’ while an input signal is present, a

built-in zero-crossing detector allows only switching at

zero input voltage. However, when the supply voltage

drops below 6 V (e.g. engine start), the circuit mutes

immediately avoiding clicks coming from electronic

circuitry preceding the power amplifier.

The voltage of the SE electrolytic capacitor (pin 11) is

always kept at 0.5VP by means of a voltage buffer (see

Fig.1). The value of this capacitor has an important

influence on the output power in SE mode, especially at

low signal frequencies, a high value is recommended to

minimize dissipation at low frequencies.

1997 Aug 14 6

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

Note

1. The value of Rth(c-h) depends on the application (see Fig.3).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VPsupply voltage operating −18 V

non operating −30 V

load dump; tr> 2.5 ms −50 V

VP(sc) short-circuit safe voltage −18 V

Vrp reverse polarity voltage −6V

OSM non-repetitive peak output current −6A

ORM repetitive peak output current −4A

tot total power dissipation −60 W

Tstg storage temperature −55 +150 °C

Tvj virtual junction temperature −150 °C

Tamb operating ambient temperature −40 −°C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-c) thermal resistance from junction to case see note 1 1.3 K/W

Rth(j-a) thermal resistance from junction to ambient 40 K/W

1997 Aug 14 7

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

Heatsink design

There are two parameters that determine the size of the

heatsink. The first is the rating for the virtual junction

temperature and the second is the ambient temperature at

which the amplifier must still deliver its full power in the

BTL mode.

With a conventional BTL ampliﬁer, the maximum power

dissipation with a music-like signal (at each ampliﬁer) will

be approximately two times 5 W. At a virtual junction

temperature of 150 °C and a maximum ambient

temperature of 60 °C, Rth(vj-c) = 1.3 K/W and

Rth(c-h) = 0.2 K/W, the thermal resistance of the heatsink

should be:

Compared to a conventional BTL ampliﬁer , the TDA1561Q

has a higher efﬁciency. The thermal resistance of the

heatsink should be:

150 60–

25×

---------------------- 1.3–0.2–7.5 K/W=

1.7 150 60–

25×

----------------------





1.3–0.2–13.8 K/W=Fig.3 Thermal equivalent resistance network.

handbook, halfpage

3.6 K/W

0.6 K/W

3.6 K/W

virtual junction

OUT 1 OUT 1

case

3.6 K/W

0.6 K/W

3.6 K/W

OUT 2 OUT 2

MGC424

0.1 K/W

1997 Aug 14 8

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

DC CHARACTERISTICS

VP= 14.4 V; Tamb =25°C; measured in Fig.6; unless otherwise speciﬁed.

Note

1. The circuit is DC biased at VP= 6 to 18 V and AC operating at VP=8to18V.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Supplies

VPsupply voltage note 1 6.0 14.4 18.0 V

Iqquiescent current RL=∞−95 150 mA

Istb standby current −150µA

Caverage electrolytic capacitor

voltage at pin 11 −7.1 −V

∆VODC output offset voltage on state −−150 mV

mute state −−50 mV

Mode select switch (see Fig.4)

Vms voltage at mode select pin

(pin 3) standby condition 0 −1V

mute condition 2 −3V

on condition (SE/BTL mode) 4 −5.5 V

on condition (SE mode only) 7.5 −VPV

Ims switch current through pin 3 Vms =5V −−40 µA

Protection

Tdis BTL disable temperature −145 −°C

Fig.4 Switching levels of mode select switch.

handbook, halfpage

,,,,,,,

,,,,,

,,,,,,,

MLD216

SE Only

,,,,,,,

SE/BTL

,,,,,,,

Standby

Mute

1997 Aug 14 9

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

AC CHARACTERISTICS

VP= 14.4 V; RL=4Ω; C11 = 1000 µF; f = 1 kHz; Tamb =25°C; measured in Fig.6; unless otherwise speciﬁed.

Notes

1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz.

2. Frequency response externally fixed (input capacitors determine low frequency roll-off).

3. The SE to BTL switch voltage level depends on VP.

4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.

5. Noise output voltage is independent of Rs (see Fig.6)(Vi= 0 V).

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Pooutput power THD = 1% 15 18 −W

THD = 10% 21 23 −W

EIAJ −36 −W

VP= 13.2 V; THD = 0.5% −14 −W

VP= 13.2 V; THD = 10% −20 −W

THD total harmonic distortion Po= 1 W; f = 1 kHz; note 1 −0.1 −%

Pddissipated power see Figs 9 and 10 W

Bppower bandwidth THD = 1%; Po=−1dB

with respect to 15 W −20 to

15000 −Hz

fro(l) low frequency roll-off −1 dB; note 2 −25 −Hz

fro(h) high frequency roll-off −1 dB 130 −−kHz

Gvclosed loop voltage gain 31 32 33 dB

SVRR supply voltage ripple rejection Rs=0Ω; Vripple = 2 V (p-p)

on; f = 1 kHz 45 60 −dB

mute; f = 1 kHz −90 −dB

standby; f = 100 Hz to 10 kHz 80 −−dB

CMRR common mode rejection ratio Rs=0Ω; f = 1 kHz −80 −dB

Ziinput impedance 45 60 75 kΩ

∆Zimismatch in input impedance −1−%

VSE-BTL SE to BTL switch voltage level note 3 −3−V

Voutoutput voltage-mute (RMS value) Vi= 1 V (RMS) −50 100 µV

Vn(o) noise output voltage on; Rs=0Ω; note 4 −160 300 µV

on; Rs=10kΩ; note 4 −170 −µV

mute; note 5 −20 −µV

cs channel separation Rs=0Ω40 60 −dB

∆Gvchannel unbalance −−1dB

1997 Aug 14 10

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

TEST AND APPLICATION INFORMATION

Fig.5 Test diagram.

handbook, full pagewidth

220 nF

470 nF

220 nF

4 Ω3.9 Ω

1000 µF

(16 V)

100

3.9 Ω

0.5VP

0.5Rs

MLD223

TDA1561Q

4 Ω3.9 Ω

10 nF

3.9 Ω

100 nF

input 2

input 1

1000 µF

16 V 220 nF

IN1

HVP

GND1

OUT1

MODE

OUT1

OUT2

C11

CIN

IN2

GND2

OUT2

1997 Aug 14 11

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

Fig.6 Application diagram.

handbook, full pagewidth

220 nF

100 nF

2 x 220 nF

power ground

signal ground

220 nF

1000 µF

16 V 100 nF

4 Ω3.9 Ω

1000 µF

(16 V)

3.9 Ω

100

0.5VP

MLD213

TDA1561Q

4 Ω3.9 Ω

10 nF

3.9 Ω

100 nF

IN1

HVP

GND1

OUT1

MODE

OUT1

OUT2

C11

CIN

IN2

GND2

OUT2

(1)

0.5Rs

Connect Boucherot filter to pin 4 respectively pin 10 with the shortest possible connection.

1997 Aug 14 12

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

handbook, full pagewidth

MGK182

Mode

select

gnd

mss

GND

In1 In2sgnd

Cool Power

Out 2Out 1

TDA1561Q

4 × 220 nF

86.36

43.18

Fig.7 PCB layout (component side) for the application of Fig.6.

Dimensions in mm.

1997 Aug 14 13

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

handbook, full pagewidth

MGK183

Mode

gnd

mss

GND

In2 In1sgnd

Out1Out2

86.36

43.18

Fig.8 PCB layout (soldering side) for the application of Fig.6.

Dimensions in mm.

1997 Aug 14 14

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

INTERNAL PIN CONFIGURATIONS

PIN NAME EQUIVALENT CIRCUIT

1,12,13 IN1, CIN, IN2

2HV

3 MODE

pin 1

pin 12

pin 13

MLD217

handbook, halfpage

MLD218

pin 2

handbook, halfpage

MLD221

pin 3

1997 Aug 14 15

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

5, 9 OUT1, OUT2

6, 8 OUT1, OUT2

11 C11

PIN NAME EQUIVALENT CIRCUIT

handbook, halfpage

MLD220

pins 5, 9

handbook, halfpage

MLD219

pins 6, 8

MLD222

pin 11

1997 Aug 14 16

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

ADDITIONAL APPLICATION INFORMATION

Fig.9 Dissipation; sine wave driven.

handbook, halfpage

010

(W)

468

MBH692

(1)

(2)

Input signal 1 kHz, sinusoidal; VP= 14.4 V.

(1) For a conventional BTL amplifier.

(2) For TDA1561Q. Fig.10 Dissipation; pink noise through IEC-268

filter.

handbook, halfpage

010

(W)

468

MBH693

(1)

(2)

(1) For a conventional BTL amplifier.

(2) For TDA1561Q.

Fig.11 IEC-268 filter.

430 Ω

input output

330 Ω

3.3

kΩ

3.3

kΩ10

kΩ

nF 68

470 nF2.2 µF 2.2 µF

MGC428

1997 Aug 14 17

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

handbook, full pagewidth

220 nF

pink

noise

100 nF

2×

220 nF

4 Ω3.9 Ω

1000 µF

(16 V)

3.9 Ω

100

1/2VP

on condition

MGC427

TDA1561Q

4 Ω3.9 Ω

10 nF

3.9 Ω

100 nF

IEC-268

FILTER

IN1

HVP

GND1

OUT1

MODE

OUT1

OUT2

C11

CIN

IN2

GND2

OUT2

Fig.12 Test and application diagram for dissipation measurements with a music-like signal (pink noise).

Fig.13 DC output voltage as a function of VP.

handbook, halfpage

08 24

(V)

MBH694

Vms =5V.

Fig.14 Quiescent current as a function of VP.

handbook, halfpage

08 24

(V)

(mA)

125

100

MBH695

Vms = 5 V; RI=∞.

1997 Aug 14 18

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

Fig.15 IP as a function of Vms (pin 3).

handbook, halfpage

02 86

off mute

VMODE (V)

(mA)

160

120

MBH696

SE/BTL SE only

VP= 14.4 V; Vin = 0 mV; RI=∞.

Fig.16 Ims as a function of Vms.

handbook, halfpage

02 86

MODE (V)

IMODE

(µA)

MBH697

Fig.17 Output power as a function of VP.

handbook, halfpage

8.4 10.8 1815.6

(3)

(2)

(1)

VP (V)

(W)

13.2

MBH698

Both channels driven.

(1) EIAJ.

(2) THD = 10%.

(3) THD = 1%.

Fig.18 THD + noise as a function of Po.

handbook, halfpage

102

10−1

10−2

MBH699

10−210−11

THD + N

(%)

10 Po (W) 102

(1)

(2)

(3)

(1) f = 10 kHz.

(2) f = 1 kHz.

(3) f = 100 Hz.

1997 Aug 14 19

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

Fig.19 THD + noise as a function of frequency.

handbook, halfpage

−1

−2

MBH700

10 10

f (Hz)

THD + N

(%)

(1)

(2)

(1) Po=10W.

(2) Po=1W.

Fig.20 Power bandwidth at THD = 1%.

handbook, halfpage

MBH701

10 102103104f (Hz)

(W)

105

(1)

(2)

(1) For OUT2.

(2) For OUT1.

Fig.21 Gain as a function of frequency.

handbook, halfpage

MBH702

10 102103104f (Hz)

(dB)

106

105

Vin =50mV.

Fig.22 SVRR as a function of frequency.

handbook, halfpage

−120

−100

−80

−60

−40

−20

MBH703

10 102103104f (Hz)

SVRR

(dB)

105

mute

off

Vripple(p-p) =2V.

1997 Aug 14 20

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

Fig.23 Channel separation as a function of

frequency.

handbook, halfpage

−100

−60

−40

−20

MBH704

10 102103104f (Hz)

αcs

(dB)

105

(2)

(1)

(1) Po=1W.

(2) Po=10W.

Fig.24 Mode select circuit.

handbook, halfpage

MBH690

47 µF

10 kΩMODE5 V/40 µA

1997 Aug 14 21

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

Fig.25 Output waveforms.

handbook, full pagewidth

MBH691

0 1 2 t (ms) 3

1/2 VP

−VP

Vload

(1) (2) (3)

Vmaster

Vslave

See Fig.5:

Vload =V

6−V

or V8−V9

Vmaster =V

or V8

Vslave =V

or V9

1997 Aug 14 22

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

PACKAGE OUTLINE

UNIT A e1

A2bpcD

(1) E(1) Z(1)

deD

hLL

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 17.0

15.5 4.6

4.2 0.75

0.60 0.48

0.38 24.0

23.6 20.0

19.6 10 3.4

0.8

12.2

11.8 1.7

5.08 2.4

1.6

62.00

1.45

2.1

1.8

3.4

3.1 4.3

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

12.4

11.0

SOT141-6

0 5 10 mm

scale

0.25

0.03

Ze2

113

non-concave

view B: mounting base side

95-03-11

97-12-16

DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 12 mm) SOT141-6

1997 Aug 14 23

Philips Semiconductors Preliminary speciﬁcation

2×23 W high efﬁciency car radio power

ampliﬁer TDA1561Q

SOLDERING

Introduction

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mounted components are mixed

on one printed-circuit board. However, wave soldering is

not always suitable for surface mounted ICs, or for

printed-circuits with high population densities. In these

situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our

“IC Package Databook”

(order code 9398 652 90011).

Soldering by dipping or by wave

The maximum permissible temperature of the solder is

260 °C; solder at this temperature must not be in contact

with the joint for more than 5 seconds. The total contact

time of successive solder waves must not exceed

5 seconds.

The device may be mounted up to the seating plane, but

the temperature of the plastic body must not exceed the

specified maximum storage temperature (Tstg max). If the

printed-circuit board has been pre-heated, forced cooling

may be necessary immediately after soldering to keep the

temperature within the permissible limit.

Repairing soldered joints

Apply a low voltage soldering iron (less than 24 V) to the

lead(s) of the package, below the seating plane or not

more than 2 mm above it. If the temperature of the

soldering iron bit is less than 300 °C it may remain in

contact for up to 10 seconds. If the bit temperature is

between 300 and 400 °C, contact may be up to 5 seconds.

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

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Spain: Balmes 22, 08007 BARCELONA,

Tel. +34 3 301 6312, Fax. +34 3 301 4107

Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,

Tel. +46 8 632 2000, Fax. +46 8 632 2745

Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,

Tel. +41 1 488 2686, Fax. +41 1 481 7730

Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,

TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874

Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,

209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,

Tel. +66 2 745 4090, Fax. +66 2 398 0793

Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,

Tel. +90 212 279 2770, Fax. +90 212 282 6707

Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,

252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461

United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,

MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421

United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,

Tel. +1 800 234 7381

Uruguay: see South America

Vietnam: see Singapore

Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,

Tel. +381 11 625 344, Fax.+381 11 635 777

For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,

Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825

Argentina: see South America

Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,

Tel. +61 2 9805 4455, Fax. +61 2 9805 4466

Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,

Fax. +43 160 101 1210

Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,

220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773

Belgium: see The Netherlands

Brazil: see South America

Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,

51 James Bourchier Blvd., 1407 SOFIA,

Tel. +359 2 689 211, Fax. +359 2 689 102

Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,

Tel. +1 800 234 7381

China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America

Czech Republic: see Austria

Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,

Tel. +45 32 88 2636, Fax. +45 31 57 0044

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615800, Fax. +358 9 61580920

France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,

Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 23 53 60, Fax. +49 40 23 536 300

Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,

Tel. +30 1 4894 339/239, Fax. +30 1 4814 240

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: see Singapore

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,

Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381

Middle East: see Italy

Printed in The Netherlands 547027/1200/05/pp24 Date of release: 1997 Aug 14 Document order number: 9397 750 02732