SFH 3211 FA
NPN-Silizium-Fototransistor in SMT TOPLED® RG-Gehäuse
Silicon NPN Phototransistor in SMT TOPLED® RG-Package
Lead (Pb) Free Product - RoHS Compliant
SFH 3211 FA
2007-03-30 1
Wesentliche Merkmale
• Speziell geeignet für Anwendunge n im Bereich
von 750 nm bis 1120 nm
• Hohe Linearität
• Gruppiert lieferbar
Anwendungen
• Miniaturlichtschranken
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Fotostrom , (Ee=0,1mW/cm2, λ=950nm VCE = 5 V)
Photocurrent
Ipce (μA)
SFH 3211 FA Q65110A2526 ≥ 16
SFH 3211 FA-3/-4 Q65110A2528 25-80
Features
• Especially suitable for applications from
750 nm to 1120 nm
• High linearity
• Available in groups
Applications
• Miniature photointerrupters
• Industrial electronics
• For control and drive circuits
2007-03-30 2
SFH 3211 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 … + 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 35 V
Kollektorstrom
Collector curr ent IC15 mA
Kollektorspitzenstrom, τ < 10 μs
Collector surge current ICS 75 mA
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 165 mW
Wärmewiderstand für Montage auf PC-Board
Thermal resistance for mounting on pcb RthJA 450 K/W
SFH 3211 FA
2007-03-30 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λS max 980 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectr al range of sens itivity
S = 10% of Smax
λ750 … 1120 nm
Bestrahlungsempfindliche Fläche (∅ 240 μm)
Radiant sensitive area A0.045 mm2
Abmessung der Chipfläche
Dimensions of chip area L × B
L × W0.45 × 0.45 mm × mm
Halbwinkel
Half angle ϕ± 60 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E = 0
Capacitance CCE 5.0 pF
Dunkelstrom
Dark current
VCE = 25 V, E = 0
ICEO 1 (≤ 200) nA
2007-03-30 4
SFH 3211 FA
Directional Characteristics
Srel = f (ϕ)
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 3211FA -2 -3 -4
Fotostrom
Photocurrent
Ee = 0.1 mW/cm2, λ = 950 nm, VCE = 5 V
IPCE ≥ 16 16 … 32 25 … 50 40 … 80 μA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf7 6 7 8 μs
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation voltage
IC = IPCEmin1) × 0.3,
Ee = 0.1 mW/cm2
VCEsat 150 150 150 150 mV
1) IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe.
1) IPCEmin is the min. photocurrent of the specifie d group.
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
SFH 3211 FA
2007-03-30 5
Relative Spectral Sensitivity,
SFH 3211 Srel = f (λ)
Total Power Dissipation
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 5 V, E = 0
0
OHF00207
400
S
rel
λ
nm
%
500 600 700 800 900 1100
10
20
30
40
50
60
70
80
100
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
T
OHF01530
A
CEO
Ι
-1
10
10 0
10 1
10 2
10 3
-25
nA
0 25 50 75 100
˚C
Relative Spectral Sensitivity,
SFH 3211 FA Srel = f (λ)
Photocurrent
IPCE = f (VCE), Ee = Parameter
Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
λ
OHF00468
0
rel
S
400
20
40
60
80
%
100
nm500 600 700 800 900 1100
V
OHF01529
CE
PCE
Ι
0
0
10
10
-2
10
-1
mA
V
5 10 15 20 25 30 35
mW
cm
2
0.1
0.25
2
cm
mW
0.5
2
cm
mW
1
2
cm
mW
V
OHF01528
CE
-2
10
CE
C
10
-1
10
0
10
1
10
2
0V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
pF
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (VCE), E = 0
Photocurrent
IPCE /IPCE25° = f (TA), VCE = 5 V
E
OHF01924
e
PCE
Ι
10
-1
10
-3
10
-2
10
0
10
0
10
1
10
2
10
3
2
mW/cm
2
3
4
μA
V
OHF01527
CE
CEO
Ι
-3
10
10
-2
10
-1
10
0
10
1
0 5 10 15 20 25 30 35V
nA
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
2007-03-30 6
SFH 3211 FA
Maßzeichnung
Package Outlines
Empfohlenes Lötpaddesign
Recommended Solderpad Design
Maße in mm (inch) / Dimensions in mm (inch)
GPLY6067
0...0.1 (0.004)
Collector marking
4˚±1
3.0 (0.118)
2.6 (0.102)
2.3 (0.091)
2.1 (0.083)
3.4 (0.134)
3.0 (0.118)
(2.4 (0.094))
2.1 (0.083)
1.7 (0.067)
5.4 (0.213)
5.0 (0.197)
0.6 (0.024)
0.4 (0.016)
0.3 (0.012) min
0.3 (0.012) max
1.0 (0.039)
0.9 (0.035)
Collector
OHLPY977
1.2 (0.047)
6 (0.236)
2.6 (0.102)
heat dissipation
Cu-area > 16 mm
Cu-Fläche > 16 mm
2
for improved
Wärmeableitung
für verbesserte
Padgeometrie
Paddesign
2
Solder resist
Lötstopplack
6 (0.236)
1.2 (0.047)
2.6 (0.102)
Hole on PCB
2.8 (0.110)
2.4 (0.094)
SFH 3211 FA
2007-03-30 7
Lötbedingungen Vorbehandlung nach JEDEC Level 2
Soldering Conditions Preconditioning acc. to JEDEC Level 2
Reflow Lötprofil für bleifreies Löten (nach J-STD-020C)
Reflow Soldering Profile for lead free soldering (acc. to J-STD-020C)
Wellenlöten (TTW) (nach CECC 00802)
TTW Soldering (acc. to CECC 00802)
OHLA0687
0
0
T
t
˚C
s
120 s max
50
100
150
200
250
300
Ramp Up
100 s max
50 100 150 200 250 300
Ramp Down
6 K/s (max)
3 K/s (max)
25 ˚C
30 s max
260 ˚C
+0 ˚C
-5 ˚C
245 ˚C
±5 ˚C
240 ˚C
255 ˚C
217 ˚C
Maximum Solder Profile
Recommended Solder Profile
235 ˚C
-0 ˚C
+5 ˚C
Minimum Solder Profile
10 s min
OHLY0598
0
050 100 150 200 250
50
100
150
200
250
300
T
t
C
s
235 C
10 s
C... 260
1. Welle
1. wave
2. Welle
2. wave
5 K/s 2 K/s
ca 200 K/s
CC... 130100
2 K/s Zwangskühlung
forced cooling
Normalkurve
standard curve
Grenzkurven
limit curves
2007-03-30 8
SFH 3211 FA
Published by
OSRAM Opto Semiconductors GmbH
Wernerwerkstrasse 2, D-93049 Regensburg
www.osram-os.com
© All Rights Reserved.
The information describes the type of component and shall not be considered as assured characteristics.
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
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incurred.
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components 1 , may only be used in life-support devices or systems 2 with the express written app roval of OSRAM OS.
1 A critical componen t is a component usedin a life-support device or syste m whose failure can reasonably be expected
to cause the failure of that life-support devic e or system, or to a ffect its safety or e ffectiveness of that device or system.
2 Life support devices or syste ms are intended (a) to be implanted in the human body, o r (b) to support and/or maintain
and sustain human life. If they fail, it is reasonable to assume that the he alth of the user may be endangered.
