A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 50 mA 35 V
BVCER IC = 50 mA RBE = 10 Ω 60 V
BVEBO IE = 10 mA 4.0 V
ICES VE = 28 V 5.0 mA
hFE VCE = 5.0 V IC = 1.0 A 10 100 ---
Cob VCB = 28 V f = 1.0 MHz 5.0 pF
PGE VCE = 18 V ICQ = 220 mA f = 2.0 GHz
POUT = 1.0 W 10 dB
NPN SILICON RF POWER TRANSISTOR
MLN2030SS
DESCRIPTION:
The ASI MLN2030SS is Designed
for Class A linear Applications up to
2.0 GHz.
FEATURES:
• Class A Operation
• PG = 10 dB at 1.0 W/2.0 G Hz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 10 A
VCB 60 V
VCE 35 V
PDISS 140 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 20 °C/W
PACKAGE STYLE .205 4L STUD
ORDER CODE: ASI10633
A
B
H
E
F
.098 / 2.500
.161 / 4.100
.028 / 0.700
.976 / 24.800
.138 / 3.500
.976 / 24.800
inches / m m
MINIMUM
A
G
F
E
D
C
B
1.000 / 25.4000
.110 / 2.800
.196 / 5.000
1.000 / 25.4000
MAXIMUM
inches / m m
.031 / 0.800
C
D
H
I
J.200 / 5.100
.425 / 10.800
.004 / 0.100 .006 / 0.150
.465 / 11.800
2.05 / 5.200
G
J
#8-32UNC
.200 / 5.100 .208 / 5.300
DIM
