ES1A thru ES1J
FEA T URES
Glass passivated chip
Super fast switching for high efficiency
For surface mounted applications
Low forward voltage drop and high current capability
Low reverse leakage current
Plastic material has UL flammability classification 94V-0
ME CHANICAL DATA
Case : Molded plastic
Polarity : Indicated by cathode band
Weight : 0.002 ounces, 0.064 grams
SMA
All Dimensions in millimeter
SMA
DIM. MIN. MAX.
A
C
D
E
F
G
H
B 4.06 4.57
2.92 2.29
1.27 1.63
0.31 0.15
4.83 5.59
0.05 0.20
2.01 2.62
0.76 1.52
B
A
C
HEF
GD
Maximum Av erage Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward Voltage at 1.0A DC
Maximum DC Reve rse Cu rrent
at Rated DC Blocking Voltage
1.0
30
0.92
Operating Temperature Range
Storage Temperature Range
Typical Therm al Resistance (Note 3 )
Typical Junction Capacitance (Note 2)
UNIT
CHARACTERISTICS SYMBOL
@TL =110 C
ES1A
Maximum Reverse Recovery Tim e (Note 1)
NOTES : 1.Reverse R ecovery Test Conditions :I
F
=0.5A,I
R
=1.0A,I
RR
=0.25A.
2.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3.Thermal Resistance junctio n to Lead.
SURFACE MOUNT
SUPER FAST RECTIFIERS
REVERSE VOLTAGE -
50
to
400
Volts
FORWARD CURRENT -
1. 0
Ampere
MAXIMUM RATINGS A ND ELECT RICAL CHARACTERISTICS
Ratings at 25
℃
amb ien t t empera ture un l ess otherwise specif ied.
Sin gle ph ase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 3, 25-Mar-2002, KSGA01
@TJ =25 C
@TJ=125 C
Typical Reverse Re co very Time
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
T
RR
T
RR
C
J
R
θ
JL
R
θ
JL
T
J
T
STG
50
35
50
ES1B
100
70
100
ES1C
150
105
150
ES1D
200
140
200
ES1G
400
280
400
ES1J
600
420
600
V
V
V
1.25 1.30
A
A
V
uA
ns
ns
pF
C/W
C
C
5.0
200
25
20
10
25
-55 to + 150
-55 to + 150
30
35