3–900 Motorola Bipolar Power Transistor Device Data
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
•High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
•Collector–Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 60 Vdc (Min) — TIP120, TIP125
VCEO(sus) = 80 Vdc (Min) — TIP121, TIP126
VCEO(sus) = 100 Vdc (Min) — TIP122, TIP127
•Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
•Monolithic Construction with Built–In Base–Emitter Shunt Resistors
•TO–220AB Compact Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
TIP120,
TIP125
ÎÎÎÎ
ÎÎÎÎ
TIP121,
TIP126
ÎÎÎÎ
ÎÎÎÎ
TIP122,
TIP127
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎ
ÎÎÎ
60
ÎÎÎÎ
ÎÎÎÎ
80
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCB
ÎÎÎ
ÎÎÎ
60
ÎÎÎÎ
ÎÎÎÎ
80
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak
ÎÎÎÎ
ÎÎÎÎ
IC
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
5.0
8.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
120
ÎÎÎ
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
ÎÎÎÎ
ÎÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
65
0.52
ÎÎÎ
ÎÎÎ
Watts
W/
_
C
ÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
PD
ÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎ
2.0
0.016
ÎÎÎ
Î
Î
Î
ÎÎÎ
Watts
W/
_
C
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Unclamped Inductive Load Energy (1)
ÎÎÎÎ
ÎÎÎÎ
E
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
50
ÎÎÎ
ÎÎÎ
mJ
ÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction,
Temperature Range
ÎÎÎÎ
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
ÎÎÎ
_
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎ
ÎÎÎÎÎ
RθJC
1.92
ÎÎÎ
ÎÎÎ
_
C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Ambient
ÎÎÎÎÎ
ÎÎÎÎÎ
RθJA
62.5
ÎÎÎ
ÎÎÎ
_
C/W
(1) IC = 1 A, L = 100 mH, P.R.F. = 10 Hz, VCC = 20 V, RBE = 100 Ω.
80
00 20 40 60 80 100 120 160
Figure 1. Power Derating
T, TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
40
20
60
140
TC
4.0
0
2.0
1.0
3.0
TA
TA
TC
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TIP120
TIP121
TIP122
TIP125
TIP126
TIP127
DARLINGTON
5 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60–80–100 VOLTS
65 WATTS
*Motorola Preferred Device
*
NPN
PNP *
*
*
CASE 221A–06
TO–220AB
*
*
REV 2
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
3–901
Motorola Bipolar Power Transistor Device Data
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25
_
C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0) TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
60
80
100
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
—
—
—
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0) TIP120, TIP125
(VCE = 40 Vdc, IB = 0) TIP121, TIP126
(VCE = 50 Vdc, IB = 0) TIP122, TIP127
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ICEO
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
—
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
0.5
0.5
0.5
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0) TIP120, TIP125
(VCB = 80 Vdc, IE = 0) TIP121, TIP126
(VCB = 100 Vdc, IE = 0) TIP122, TIP127
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
ICBO
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
—
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
0.2
0.2
0.2
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IEBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 0.5 Adc, VCE = 3.0 Vdc)
(IC = 3.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
1000
1000
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation V oltage
(IC = 3.0 Adc, IB = 12 mAdc)
(IC = 5.0 Adc, IB = 20 mAdc)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
VCE(sat)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
2.0
4.0
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
(IC = 3.0 Adc, VCE = 3.0 Vdc)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VBE(on)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
2.5
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
hfe
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
4.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz TIP125, TIP126, TIP127
TIP120, TIP121, TIP122
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
Cob
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
300
200
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
pF
(1) Pulse Test: Pulse Width
v
300 µs, Duty Cycle
v
2%.
Figure 2. Switching Times Test Circuit
5.0
0.1
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t, TIME ( s)µ
2.0
1.0
0.5
0.05 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10
0.3
0.7
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+8.0 V
V1
approx
–12 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25 µs
0
RB
51 D1
+4.0 V
VCC
–30 V
RC
TUT
≈ 8.0 k ≈ 120
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities.
RB & RC V ARIED T O OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
3.0
0.2
0.1
0.07
5.0 7.0
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
3–902 Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
ZθJC(t) = r(t) RθJC
RθJC = 1.92°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) ZθJC(t)
P(pk)
t1t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01 SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
20
1.0
Figure 5. Active–Region Safe Operating Area
VCE, COLLECTOR–EMITTER VOLT AGE (VOLTS)
10
5.0
2.0
1.0
0.02 2.0 5.0 20 50 100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25°C (SINGLE PULSE)
0.5
IC
,
C
OLLE
CT
OR
C
URREN
T
(AMP
)
TJ = 150°Cdc
1ms
100 µs
0.2
0.1
10
0.05
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
5ms
3.0 7.0 30 70
TIP120, TIP125
TIP121, TIP126
TIP122, TIP127
500 µs
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_
C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown
300
0.1 VR, REVERSE VOLT AGE (VOLTS)
30 2.0 5.0 10 20 100500.2 0.5 1.0
C, CAPACIT ANCE (pF)
100
50
TJ = 25°C
Cib
70
Cob
PNP
NPN
Figure 6. Small–Signal Current Gain
10,000
1.0 f, FREQUENCY (kHz)
10 20 50 100 200 10002.0 5.0 10
3000
500
100
TC = 25°C
VCE = 4.0 Vdc
IC = 3.0 Adc
1000
PNP
NPN
Figure 7. Capacitance
50
500
h
fe
,
SMALL–SIGNAL
C
URREN
T
GAIN
5000
2000
300
200
30
20
200
TIP120 TIP121 TIP122 TIP125 TIP126 TIP127
3–903
Motorola Bipolar Power Transistor Device Data
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
20,000
0.1
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
200 0.2 0.3 0.5 1.0 2.0 10
500
1000
300
h
FE
,
DC
C
URREN
T
GAIN
2000
3000
VCE = 4.0 V
0.7 3.0
NPN
TIP120, TIP121, TIP122 PNP
TIP125, TIP126, TIP127
Figure 9. Collector Saturation Region
3.0
0.3 IB, BASE CURRENT (mA)
1.0 0.5 1.0 2.0 10 30
1.8
IC = 2.0 A TJ = 25°C
4.0 A
2.2
2.6
0.7 5.0
3.0
0.1
IC, COLLECTOR CURRENT (AMP)
0.2 0.3 0.5 1.0 2.0 5.0 10
2.5
2.0
1.5
1.0
0.5
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
Figure 10. “On” Voltages
VBE @ VCE = 4.0 V
3.0
10,000
5000 TJ = 150°C
25°C
–55°C
20
IC, COLLECTOR CURRENT (AMP)
hFE, DC CURRENT GAIN
VCE = 4.0 V
TJ = 150°C
25°C
–55°C
1.4
6.0 A
IB, BASE CURRENT (mA)
TJ = 25°C
IC, COLLECTOR CURRENT (AMP)
V, VOLTAGE (VOLTS)
TJ = 25°C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
5.0 7.0
20,000
0.1
200 0.2 0.3 0.5 1.0 2.0 10
500
1000
300
2000
3000
0.7 3.0
10,000
5000
5.0 7.0
7000
700
3.0 7.0
3.0
0.3
1.0 0.5 1.0 2.0 10 30
1.8
2.2
2.6
0.7 5.0 20
1.4
3.0 7.0
IC = 2.0 A 4.0 A 6.0 A
0.7 7.0
3.0
0.1 0.2 0.3 0.5 1.0 2.0 5.0 10
2.5
2.0
1.5
1.0
0.5 3.00.7 7.0
2–3
Selector Guide
Motorola Bipolar Power Transistor Device Data
Table 1. Plastic (Isolated TO–220 Type)
Device Type Resistive Switching
ICCont
Amps
Max
VCEO(sus)
Volts
Min
VCES
Volts
Min NPN PNP hFE
Min/Max @ IC
Amp
ts
µs
Max
tf
µs
Max @ IC
Amp
fT
MHz
Min
PD (Case)
Watts
@ 25°C
1 250
MJF47
30/150 0.3 2 typ 0.17 typ 0.3 10 28
2 400 700
BUL44F
14/34 0.2 2.75(3) 0.2(3) 1 13 typ 25
1000
MJF18002
14/34 0.2 2.75(3) 0.175(3) 1 13 typ 25
3 100
MJF31C MJF32C
10 min 1 0.6 0.3 1 3 28
5100
MJF122
(2)
MJF127
(2) 2000 min 3 1.5 typ 1.5 typ 3 4(1) 28
400 700
BUL45F
14/34 0.3 1.7(3) 0.15(3) 1 12 typ 35
450 1000
BUT11AF
10 min .005 4 0.8 2.5 40
1000
MJF18004
14/34 0.3 1.7(3) 0.15(3) 1 13 typ 35
550 1200
MJF18204
18/35 0.5 2.75(3) 0.2(3) 2 12 35
6 400 700
BUL146F
14/34 0.5 2.5(3) 0.15(3) 3 14 typ 40
450 1000
MJF18006
14/34 0.5 3.2(3) 0.15(3) 3 14 typ 40
880
MJF6107
30/90 2 0.5 typ 0.13 typ 2 4 35
150
MJF15030 MJF15031
40 min 3 1 typ 0.15 typ 3 30 35
400 700
MJF13007
5/30 5 3 0.7 5 4 40
BUL147F
14/34 1 2.5(3) 0.18(3) 2 14 typ 45
450 1000
MJF18008
16/34 1 2.75(3) 0.18(3) 2 13 typ 45
10 60
MJF3055 MJF2955
20/100 4 — — — 2 40
80
MJF44H11 MJF45H11
40/100 4 0.5 typ 0.14 typ 5 40 35
100
MJF6388
(2)
MJF6668
(2) 3k/20k 3 1.5 typ 1.5 typ 20(1) 40
450 1000
MJF18009
14/34 1.5 2.75(3) 0.2(3) 3 12 50
12 400 700
MJF13009
6/30 8 3 0.7 8 8 40
(1)|hFE| @ 1 MHz
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
Devices listed in bold, italic are Motorola preferred devices.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
1
3
2
CASE 221D
Isolated TO–220 Type
UL Recognized
File #E69369
Selector Guide
2–4 Motorola Bipolar Power Transistor Device Data
Table 2. Plastic TO–220AB
Device Type Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min(8) NPN PNP hFE
Min/Max @ IC
Amp
ts
µs
Max
tf
µs
Max @ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°C
0.5 350 MJE2360T 15 min 0.1 10 typ 30
MJE2361T
40 min 0.1 10 typ 30
1 100 TIP29C TIP30C 15/75 1 0.6 typ 0.3 typ 1 3 30
250 TIP47 30/150 0.3 2 typ 0.18 typ 0.3 10 40
300 TIP48 MJE5730 30/150 0.3 2 typ 0.18 typ 0.3 10 40
350
TIP49 MJE5731
30/150 0.3 2 typ 0.18 typ 0.3 10 40
400
TIP50 MJE5731A
(7) 30/150 0.3 2 typ 0.18 typ 0.3 10 40
2 100
TIP112
(2)
TIP117
(2) 500 min 2 1.7 typ 1.3 typ 2 25(1) 50
400/700
BUL44
14/36 0.4 2.75(3) 0.175(3) 1 13 typ 50
450/1000
BUX85
30 0.1 3.5 1.4 1 4 50
450/1000
MJE18002
14/34 0.2 3(3) 0.17(3) 1 12 typ 40
900/1800
MJE1320
3 min 1 4 typ 0.8 typ 1 80
3 80 BD241B BD242B 25 min 1 3 40
100 BD241C BD242C 25 min 1 3 40
TIP31C TIP32C
25 min 1 0.6 typ 0.3 typ 1 3 40
150
MJE9780
50/200 0.5 5 typ 40
(1)|hFE| @ 1 MHz
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(7)VCEO = 375 V
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A–06
(TO–220AB)
123
4
2–5
Selector Guide
Motorola Bipolar Power Transistor Device Data
Table 2. Plastic TO–220AB (continued)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
Resistive Switching
@ IC
Amp
hFE
Min/Max
Device Type
VCEO(sus)
Volts
Min(8)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
@ IC
Amp
tf
µs
Max
ts
µs
Max
@ IC
Amp
hFE
Min/Max
PNPNPN
VCEO(sus)
Volts
Min(8)
4 40
MJE1123
45/100 4 5 75
60
MJE800
(2)
MJE700
(2) 750 min 1.5 1(1) 40
80
D44C12 D45C12
40/120 0.2 1 40 typ 30
400/700
MJE13005
6/30 3 3 0.7 3 4 60
5 100
TIP122
(2)
TIP127
(2) 1k min 3 1.5 typ 1.5 typ 4 4(1) 75
250 2N6497 10/75 2.5 1.8 0.8 2.5 5 80
300
2N6498
10/75 2.5 1.8 0.8 2.5 5 80
400/700
BUL45
14/34 0.3 1.7(3) 0.15(3) 1 12 typ 75
450/1000 MJE16002 5 min 5 3 0.3 3 80
450/850
MJE16004
7 min 5 2.7 0.35 3 80
450/1000
MJE18004
14/34 0.3 1.7 0.15 1.0 13 75
550/1200
MJE18204
18/35 0.5 2.75(3) 0.2(3) 2 12 75
6 80
BD243B BD244B
15 min 3 0.4 typ 0.15 typ 3 3 65
100
BD243C BD244C
15 min 30.4 typ 0.15 typ 3 3 65
TIP41C TIP42C
15/75 3 0.4 typ 0.15 typ 3 3 65
250/550
MJE16204
5 min 6 1.5(2) 0.15(2) 1 10 80
400/700
BUL146
14/34 0.5 1.75(3) 0.15(3) 3 14 typ 100
450/1000
MJE18006
14/34 0.5 3.2(3) 0.13(3) 3 14 typ 100
730 2N6288 2N6111 30/150 3 0.4 typ 0.15 typ 3 4 40
50 2N6109 30/150 2.5 0.4 typ 0.15 typ 3 4 40
70
2N6292 2N6107
30/150 2 0.4 typ 0.15 typ 3 4 40
100
BD801 BD802
15 min 3 3 65
150 BU407 30 min 1.5 0.75 5 10 60
200
BU406
30 min 1.5 0.75 5 10 60
450
BU522B
(2) 250 min 2.5 7.5 75
(1)|hFE| @ 1 MHz
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(7)VCEO = 375 V
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
Selector Guide
2–6 Motorola Bipolar Power Transistor Device Data
Table 2. Plastic TO–220AB (continued)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
Resistive Switching
@ IC
Amp
hFE
Min/Max
Device Type
VCEO(sus)
Volts
Min(8)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
@ IC
Amp
tf
µs
Max
ts
µs
Max
@ IC
Amp
hFE
Min/Max
PNPNPN
VCEO(sus)
Volts
Min(8)
8 60 2N6043(2) 2N6040(2) 1k/10k 4 1.5 typ 1.5 typ 3 4(1) 75
80
2N6044
(2)
2N6041
(2) 1k/10k 4 1.5 typ 1.5 typ 3 4(1) 75
BDX53B
(2)
BDX54B
(2) 750 min 3 4(1) 60
100
2N6045
(2)
2N6042
(2) 1k/10k 3 1.5 typ 1.5 typ 3 4(1) 75
BDX53C
(2)
BDX54C
(2) 750 min 3
TIP102
(2)
TIP107
(2) 1k/20k 3 1.5 typ 1.5 typ 3 4(1) 80
120 MJE15028 MJE15029 20 min 4 30 50
150
MJE15030 MJE15031
20 min 4 30 50
200
BU806
(2) 100 min 5 0.55 typ 0.2 typ 5 60
300/600 MJE5740(2) 200 min 4 8 typ 2 typ 6 4 80
MJE5850 15 min 2 2 0.5 4 80
350
MJE5741
(2) 200 min 4 8 typ 2 typ 6 80
MJE5851
15 min 2 2 0.5 4 80
MJE5742
(2) 200 min 4 8 typ 2 typ 6 80
MJE13007
5/30 5 3 0.7 5 80
MJE5852
15 min 2 2 0.5 4 80
400/650
MJE16106
6/22 8 2 typ 0.1 typ 5 100
400/700
BUL147
14/34 1 2.5(3) 0.18(3) 2 14 typ 125
450/1000
MJE18008
16/34 1 2.75(3) 0.18(3) 2 13 typ 125
10 20
BD808
15 min 4 1.5 90
60 D44H8 D45H8 40 min 4 50
MJE3055T MJE2955T
20/70 4 75
2N6387
(2)
2N6667
(2) 1k/20k 5 20(1) 65
80
BDX33B
(2)
BDX34B
(2) 750 min 3 3 70
BD809 BD810
15 min 4 1.5 90
2N6388
(2)
2N6668
(2) 1k/20k 5 20(1) 65
D44H10 D45H10 20 min 4 0.5 typ 0.14 typ 5 50 typ 50
D44H11 D45H11
40 min 4 0.5 typ 0.14 typ 5 50 typ 50
(1)|hFE| @ 1 MHz
(2)Darlington
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(7)VCEO = 375 V
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
(9)Self protected Darlington
Devices listed in bold, italic are Motorola preferred devices.
2–7
Selector Guide
Motorola Bipolar Power Transistor Device Data
Table 2. Plastic TO–220AB (continued)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
Resistive Switching
@ IC
Amp
hFE
Min/Max
Device Type
VCEO(sus)
Volts
Min(8)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
@ IC
Amp
tf
µs
Max
ts
µs
Max
@ IC
Amp
hFE
Min/Max
PNPNPN
VCEO(sus)
Volts
Min(8)
10 100
BDX33C
(2)
BDX34C
(2) 750 min 3 3 70
450/1000
MJE18009
14/34 1.5 2.75(3) 0.2(3) 3 12 150
12 400/700
MJE13009
6/30 8 3 0.7 8 4 100
15 80
2N6488 2N6491
20/150 5 0.6 typ 0.3 typ 5 5 75
D44VH10 D45VH10
20 min 4 0.5 0.09 8 50 typ 83
100
BDW42
(2)
BDW47
(2) 1k min 5 1 typ 1.5 typ 5 4 85
Table 3. Plastic TO–218 Type
Device Type Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min(8) NPN PNP hFE
Min/Max @ IC
Amp
ts
µs
Max
tf
µs
Max @ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°C
8 500/1000
MJH16006A
5 min 8 2.5 0.25 5 125
10 60 TIP140(2) TIP145(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125
TIP141(2) TIP146(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125
100
BDV65B
(2)
BDV64B
(2) 1k min 5 125
TIP33C TIP34C 20/100 3 3 80
TIP142
(2)
TIP147
(2) 500 min 10 2.5 typ 2.5 typ 5 4(1) 125
400
BU323AP
(2) 150/100 6 15 15 6 125
MJH10012
(2) 100/2k 6 15 15 6 118
(1)|hFE| @ 1 MHz
(2)Darlington
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
Devices listed in bold, italic are Motorola preferred devices.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 340D
(TO–218 Type,
SOT–93)
1
3
2
4
Selector Guide
2–8 Motorola Bipolar Power Transistor Device Data
Table 3. Plastic TO–218 Type (continued)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
Resistive Switching
@ IC
Amp
hFE
Min/Max
Device Type
VCEO(sus)
Volts
Min(8)
ICCont
Amps
Max
PD
(Case)
Watts
@ 25°C
fT
MHz
Min
@ IC
Amp
tf
µs
Max
ts
µs
Max
@ IC
Amp
hFE
Min/Max
PNPNPN
VCEO(sus)
Volts
Min(8)
15 60
TIP3055 TIP2955
5 min 10 2.5 80
150 MJH11018(2) MJH11017(2) 400/15k 10 3 150
200 MJH11020(2) MJH11019(2) 400/15k 10 3 150
250
MJH11022
(2)
MJH11021
(2) 400/15k 10 3 150
400 BUV48 8 min 10 2 0.4 10 150
450
BUV48A
8 min 8 2 0.4 10 150
16 140 MJE4342 MJE4352 15 min 8 1.2 typ 1.2 typ 8 1 125
160
MJE4343 MJE4353
15 min 8 1.2 typ 1.2 typ 8 1 125
20 60 MJH6282(2) MJH6285(2) 750/18k 10 4 125
100
MJH6284
(2)
MJH6287
(2) 750/18k 10 4 125
25 80 TIP35A TIP36A 15/75 15 0.6 typ 0.3 typ 10 3 125
100
BD249C BD250C
10 min 15 3 125
TIP35C TIP36C
15/75 15 0.6 typ 0.3 typ 10 3 125
(2)Darlington
(8)When 2 voltages are given, the format is VCEO(sus)/VCES.
Table 4. Isolated Mounting Hole — Plastic TO–247 Type
Device Type Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min
VCES
Volts
Min NPN PNP hFE
Min/Max @ IC
Amp
ts
µs
Max
tf
µs
Max @ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°C
10 650 1500
MJW16212
4/10 10 4(3) 0.5(3) 5.5 150
800 1500
MJW16018
4 min 5 4.5 typ 0.2 typ 5 3 typ 150
12 500 1200
MJW16206
5/13 10 2.25 0.25 6.5 3 typ 150
15 450 850
MJW16010
5 min 15 1.2 typ 0.2 typ 10 150
850
MJW16012
7 min 15 0.9 typ 0.15 typ 10 150
500 1000
MJW16010A
5 min 15 3 0.4 10 150
(3)Switching tests performed w/special application simulator circuit. See data sheet for details.
(10)Tested in Applications simulator: see Data Sheet.
Devices listed in bold, italic are Motorola preferred devices.
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 340F
(TO–247 Type)
1
3
2
2–9
Selector Guide
Motorola Bipolar Power Transistor Device Data
New Product New Product New Product New Product
Table 5. Large Plastic TO–264
Device Type Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min NPN PNP hFE
Min/Max @ IC
Amp
ts
µs
Max
tf
µs
Max @ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°C
15 200
MJL3281A MJL1302A
60/175 0.1 30 typ 200
650/1500
MJL16218
4/11 12 2.5 typ 170
16 250
MJL21194 MJL21193
25/75 8 4 200
New Product New Product New Product New Product
Table 6. Plastic TO–225AA Type (Formerly TO–126 Type)
Device Type Resistive Switching
PD
ICCont
Amps
Max
VCEO(sus)
Volts
Min NPN PNP hFE
Min/Max @ IC
Amp
ts
µs
Max
tf
µs
Max @ IC
Amp
fT
MHz
Min
PD
(Case)
Watts
@ 25°C
0.3 350
MJE3439
40/160 0.02 15 15
0.5 150 MJE341 25/200 0.05 15 20.8
200
MJE344
30/300 0.05 15 20.8
250 2N5655 30/250 0.1 3.5 typ 0.24 typ 0.1 10 20
BD157 30/240 0.05 20
300
BD158
30/240 0.05 20
MJE340 MJE350
30/240 0.05 20.8
2N5656 30/250 0.1 3.5 typ 0.24 typ 0.1 10 20
Devices listed in bold, italic are Motorola preferred devices.
STYLE 2:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
CASE 340G
(TO–264)
1
3
2
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77
(TO–225AA)
31
2
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER