REVISIONS DOC. NO. SPC-FOO5 * Effective: 7/8/02 * DCP No: 1398 ALL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED mu it I c om WITHOUT qHe EXPRESS WRITTEN CONSENT OF SPC DCP #)| REV DESCRIPTION DRAWN| DATE |CHECKD| DATE |APPRVD| DATE p 1885] A RELEASED BYF | 02/03/06} HO | 2/6/06 | JWM | 2/6/06 SPCFO05.DWG Description: Silicon, TO220, Plastic, PNP Power Transistor Designed for use in general purpose amplifier and switching applications RoHS Features: Compliant High Current Gain Bandwidth Product f; 10 MHz (Min) @ k 500 mA Collector Emitter Sustaining Voltage Vogg 7OV (Min.) 4 Absolute Maximum Ratings: Pin Configuration: CollectorBase Voltage, Vogo = 80V 1. Base CollectorEmitter Voltage, Vero = 7OV 2. Collector EmitterBase Voltage, Vegg = SV 3. Emitter Continuous Collector Current, I = 7A 1 4. Collector Base Current, k = 3A 2 Total Device Dissipation (Te = +25C), Pp = 40W 3 Derate above 25C = 0.32mW/*C Operating Junction Temperature Range, Ty = 65 C to +150C Dimensions| A BIclIbD EIlF MG 4 J K LM N 10 Storage Temperature Range, Ty, = 65C to +150C 9 Min, 14.42] 9.63 |3.56} |1.15] 3.75] 2.29] 2.54] | 12.70}2.80| 2.03] 7 Electrical Characteristics: (Tc= +25C unless otherwise specified) Max. 16.5110.67 |4.83] 0.90 |1.40] 3.88] 2.79] 3.43]0.56] 14.73]4.07 | 2.92|31.24 Parameter | Symbol | Test Conditions | Min | Max | Unit | OFF Characteristics CollectorEmitter Breakdown Voltage (Note 1) Var)ce0 Ib = 100mA, 5 = O 70 - V B C a Collector CutOff Current Icex [Vee = 80V. Vegcotty = 1-9V |100] uA | F I E Ico |Von = 60V, Ip = 0 | 14 | ma H - Oy i Emitter Cut-Off Current lego Veg = SV, Ip = O - 1 mA PNP qT ON Characteristics 3 Collector A 9 0 DC Current Gain (Note 1) Vee = 4V, Ib = 2A 30 | 150} Hee | io 1 2 3 0 Vee = 4V, fb = 7A 2.3) - - 2 Base N L CollectorEmitter Saturation Voltage Voe(sat) Ip = 7A, Ip = SA - |3.5 Vv Tt | | | you fi BaseEmitter On Voltage VBE(on) Ip = 7A, Vor = 4V _ 3 Vv K Small-Signal Characteristics 1 Emitter | | | Current GainBandwidth Product (Note 2) fr [Vor = 4V, Ip = 500mA, f = 1MHz| 10 | | MHz yout Output C it C, Vep = 10V, = 0, f = 1MH | 250 F utput Capacitance obo _-|VcB E z p D _| | J J SmallSignal Current Gain Hee Vor = 4V, Ip = O.5A, f = 5O0kHz 20 _ - | G | Mee Note 1. Pulse Test: Pulse Width 300us, Duty Cycle $= 2%. Note 2. ft is defined as the frequency at which |hte| extrapolates to unity. DISCLAIMER: TOLERANCES: DRAWN BY: DATE: DRAWING TITLE: ALL STATEMENTS AND TECHNICAL INFORMATION CONTAINED | UNI ESS OTHERWISE BASAM YOUSIF 02/03/06| General Purpose Power Transistor, Silicon, Plastic , TO-220, PNP HEREIN ARE BASED UPON INFORMATION AND/OR TESTS WE BELIEVE TO BE ACCURATE AND RELIABLE. SINCE SPECIFIED, CHECKED BY: DATE: SIZE] DWG. NO. ELECTRONIC FILE REV CONDITIONS OF USE ARE BEYOND OUR CONTROL, THE OSeR SHALL DETERMINE THE SUNABILIY OF THE Propuct | DIMENSIONS ARE HISHAM ODISH 2/6/06 | A 2N6107 01H1386.DWG | A FOR THE INTENDED USE AND ASSUME ALL RISK AND FOR REFERENCE APPROVED BY: DATE: LIABILITY WHATSOEVER IN CONNECTION THEREWITH. PURPOSES ONLY. . ONT . MILLIMETER j JEEF MCVICKER 2/6/06 | SCALE: NTS U.O.M.: MILLIMETERS SHEET: 1 OF 1