S-THOMSON O7E D @f 7429237 OOL78Sa 1 one nee gm 13C 173550 D FBI SGSP216/P217 SGSP316/P317 | SGSP5I6/P5I7. N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS Vpss Rosiom} 'p These products are diffused multi-cell silicon gate 5 = N-Channel enhancement mode Power-Mos field 200V 0.750} GA effect transistors. - Fz 250V 1.2 O|] GA ABSOLUTE MAXIMUM RATINGS SOT-82 SGSP216 SGSP217 TO-220 SGSP316 SGSP317 TO-3 SGSP516 SGSP517 Vos Drain-source voltage (Vgg = 0) 250V 200V Vober Drain-gate voltage (Rgg = 20 KQ) 250V 200V Ves Gate-source voltage +20V Ip Drain current (continuous). T,,,, = 25C 6A at Tease = 100C 3.8A lonm{*) Drain current (pulsed) 24A lotm () Drain inductive current, clamped 24A SOT-82 TO-220 f0-3 Prot Total dissipation at Tease. = 25C 5OW 7oW 75W Derating factor - 0.4W/C O.6W/C O.6W/C T stg Storage temperature -5 to 150C Ty; Max. operating junction temperature 150C (*} Pulse width bmmned by safe operating area INTERNAL SCHEMATIC DIAGRAM 8 Dimensions in mm kee 2Po Pie Se eenS aceite SG S-THOMSON O7E D 73C 17356 0 TF 3- BB ie9237 OOl7as9 3 | THERMAL DATA | SOT-82 | TO-220 | TO-3 Rihj-case Thermal resistance junction-case max | 2.5C/W | 1.6C/W | 1.6C/W T Maximum tead temperature for soldering purpose 275 C ELECTRICAL CHARACTERISTICS (T,,,, = 25C unless otherwise. specified) Parameter Test conditions Min. Typ. Max, Unit OFF Vier) pss Drain-source Ip = 250A Veg = O breakdown voltage for SGSP216/P316/P516 250 Vv for SGSP217/P317/P517 | 200 Vv loss Zero gate voltage Vos = Max. Rating 250! wA drain current (Vgg = 0) less Gate-body leakage Veg = 20 V 100} nA current (Vpg = 0) ONn* : Ves ith) Gate threshold Vos = Ves Ip = 250uA| 2 4|v voltage Vps (on) Drain-source Ves = 10V Ip=3A : voltage for SGSP216/P316/P516 3.60 V for SGSP217/P317/P517 2.25) V Ves = 10 V lp= 6A for SGSP216/P316/P516 8.19 V for SGSP217/P317/P517 5.00} Vv Veg = 10V ID= 3A Tease = 100C ; for SGSP216/P316/P516 7.20 =2V for SGSP217/P317/P517 450 V Ros (on) Static drain-source Vag = 10V Ip =3A / on resistance for SGSP216/P316/P516 1.209 for SGSP217/P317/P517 0.75) Q Os Forward Vps = 25V Ip =3A 1.5 mho. | transconductance m, ; C-79 1897 -02'S 6 "S- THOMSON. OE D @ 7929237 OOL7a40 O -73C 17357 =D 730-4 ELECTRICAL CHARACTERISTICS (continued) Parameter Test conditions | Min. | Typ.| Max.| Unit. DYNAMIC Cigg Input capacitance 380 | 500) pF Coss Output capacitance Vos = 25 V f= 1 MHz 100 | 130] pF Cres Reverse transfer Veg = 0 50] 65] pF capacitance SWITCHING ta ton) Turn-on time Vee = 100 Vip = 2.5 A 27 ns t Rise time Vi= 10V RA, =500 27 ns ta (oft) Turn-off delay time (see test circuit) . 30 ns t Fall time | 30 ns SOURCE DRAIN DIODE Isp Source drain. current 6 A Isom() Source drain: current 24 A (pulsed) . : Vsp Forward on voltage Ign = GA Ves = 0 1.3 Vv ton Turn-on time Isp = 6 A Ves = 0 100 ns ty Reverse recovery difdt = 100 Alus 180 ns time * Pulsed: pulse duration < 300us, duty cycle < 2% (*) Pulse width limited by safe operating area. SWITCHING TIMES RESISTIVE LOAD Test circuit | Waveforms RL -=. 90%, - YyO-+ Se s Fin ca ie = $- 6058. <l cc ws 2 3 OF ne talon) tr 5-659 td(ott) tt Pulse width < 100 us Duty cycle <2% c-03"SG S-THOMSON OVE D #30 19358 IE 7929237 OOLPBEL Ih CLAMPED INDUCTIVE LOAD Test circuit Waveforms fang Yo O--__4_p} : 1 O- [ o i Vee - QO ~ 2700 3 clamp Ye i cf} pur. ; 5 . Pw l 500 $-6061 aa $-60601 Vi = 12V Pulse width: adjusted to obtain specified fom, Veiamp = 0.75 Visa) oss GATE CHARGE TEST CIRCUIT cc Ka y 2202Vouax oon, 1 Oo+ LN. 1. A IJ Igzcost 27Kn o's 2200pF ST. ata Pw whe esses PW adjusted to obtain required Vg DIODE BODY-DRAIN t,, MEASUREMENT mW MAINS INPUT 3.6908 Jedec test circuit 1899 ' -04a eae? areca ce SG S-THONSON O7E D ff 7929237 O017ab2 3 i LT TSC TBI O89 , SASP216/P217 2 SQSPSI6/P317 SGSPSIG/P517,- Safe operating areas TO-220/T0-3 SOT-82 SGS P216/316/516 SGS P217/317/517 ote 2 4 6. 619 2 4 6 8 1090 2 4 6 6 Vos(V) . Output characteristics Output characteristics ld pial 9 Teage225C 4 t,280ps 1S G S-THOMSON OVE D * 73C 17360 ~ $aSP216/P2t7 $GSP316/P317- SGSP516/P517 "D F394 Transfer characteristics Static drain-source on resistance fA} 9 a Teasg=25C 7 Vggzt0 o 1 2 3 4 5 6 F 6 FY 10 1 IA 0 Transconductance Normalized gate thereshold vs. temperature Vesitn) (nora) 11 a(S) Tease "55C Tease=25CSG S<THOMSON OVE D B eses237 OOL?78b4 7 mecrewegeg T3C 17361 D F39- Normalized on resistance vs Normalized breakdown voltage vs temperature temperature Rear Veseuoss 4 1 09 50 0 50 no 150 Tenat*th 8 eg 0 50 100 150 Teasel*Ch Gate charge vs, gate to source voltage Capacitance variation Ves Cin 1500 Veg20 fo{MHz - Teagg? 25C 1000 500 60. Yas(VISG S-THOMSON O?7E D i 7929237 OOL7au5 aj 73C 17362) De BGnp : . SGSP2I6/P217 SGSP316/P317 SGSP516/P517 Derating curve Source-drain. diode forward characteristics Ig A} so