BDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR HIGH GAIN GENERAL PURPOSE POWER DARLINGTON TR POWER LINEAR AND SWITCHING APPLICATIONS Complement to BDX33/33A/33B/33C respectively ABSOLUTE MAXIMUM RATINGS TO-220 Characteristic Symbol Rating Unit Collector Base : BDX34 Vesa - 45 : BDX34A - 60 V : BDX34B - 80 Vv > BDX34C - 100 Vv 1.Base 2.Collector 3.Emitter Collector Emitter Voltage : BDX34 Voeo -45 Vv : BDX34A, - 60 Vv : BDX34B - 80 V : BDX34e - 100 Vv Collector Current (BC) le -10 A Collector Current (Pulse) le -15 A Base Current lb - 0.25 A Collector Dissipation (Tce=25C) Po 70 W Junction Temperature Ts 150 C Storage Temperature Tsta -65 ~ 150 C ELECTRICAL CHARACTERISTICS (7, =25C) Characteristic Symbol Test Conditions Min | Typ | Max | Unit *Collector Emitter Sustaining Voltage : BDX34 Voeofsus) | Ic=-100m<A, le =0 -45 Vv :BDX34A -60 Vv : BDX34B - 80 Vv :BDX346 - 100 Vv *Collector Emitter Sustaining Voltage : BDX34 Veern{sus) Ic=-100mA,1,;=0 -45 Vv : BDX344 Ree = 1000 - 60 Vv : BDX34B - 80 Vv :BDX346 - 100 Vv *Collector Emitter Sustaining Voltage : BDX34 Veev(sus) | Ip=- 100mA,lz=0 -45 Vv :BDX34A4 Vee=- 1.5V - 60 v : BDX34B - 80 Vv : BDX34C - 100 Vv Collector Cutoff Current : BDX34 lego Veg =-45V, le=0 -0.2 mA :BDX34A4 Vop=- 6OV, lE=0 -02 | mA : BDX34B Vop=- 80V, L=0 -0.2 | mA > BDX346 Vep=- 100V, :=0 -0.2 | mA Collector Cutoff Current : BDX34 leeo Vor = - 22V, p= 9 -0.5 | mA : BDX34A Vee=-30V, Ip=0 -0.5 | mA : BDX34B Vee = - 40V, Ip =0 -0.5 | mA : BDX346 Vee = - SOV, Ip= 9 -0.5 | mA Emitter Cutoff Current lesa Veo=-5V,lo=0 -5 | mA *DC Current Gain : BDX34/344, hee Vce= - 3V,Io=- 4A 750 : BDX34B/34C Vor = - 8V, Ie=- 3A 750 *Collector Emitter Saturation Voltage : BDX34/34A Voef{sat) Ic=- 4A, Ip=- 8mA -25 Vv : BDX34B/34C Ic=- 3A, Ip=- 6MA -25 v *Base Emitter On Voltage : BDX34/34.A Vee(on) Vor =- 3V, Ir=- 4A -25 Vy : BDX34B/34C Vee=-3V, Ie=-3A -25 Vv * Parallel Diode Forward Voltage VE IrF=-8A -4 Vv * Pulse Test: PW=300us, duty Cycle =1.5% Pulsed Rev. B es FAIRCHILD ee SEMICONDLIGTOR mu 1999 Fairchild Semiconductor CorporationBDX34/A/B/C PNP EPITAXIAL SILICON TRANSISTOR DC CURRENT GAIN COLLECTOR EMITTER SATURATION VOLTAGE 100K -10 50K -5 ww 20K g z - a 10K 3 -2 - 2 = aK 2 & < = = -! oR = g s F ox = -05 2 500 = -02 am 100 -0.1 -O1 -02 -05 -1 -2 -5 -10 -01 -O0.2 ~O5 -1 -2 4 - 10 ipfA}, COLLECTOR CURRENT if, COLLECTOR CURRENT BASE EMITTER VOLTAGE COLLECTOR BASE CAPACITANCE ws 2 = 5 3 = a a Q 5 Z 3 e a a 8 3 = o $ 3 ec 5 3 0 -4 -2 -3 -4 -1 2 - -10 20 -50 - 100 Voegt), BASE EMITTER VOLTAGE Vert), COLLECTOR BASE VOLTAGE SAFE OPERATING AREA POWER DERATING z 5 2 = < z = o B = 5 & 4 3 o a a Z : at -2 8 -10 -20 50 100 -z09 500 - 1900 0 5B 50 7 WO 128 150 175 200 Veg}, COLLECTOR EMITTER VOLTAGE Te(?C), GASE TEMPERATURE FAIRCHILD ee SEMIGONDUSTOR mTRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx ISOPLANAR CoolFET MICROWIRE CROSSVOLT POP E?CMOS PowerTrench FACT QS FACT Quiet Series Quiet Series FAST SuperSOT-3 FASTr SuperSOT-6 GTo SuperSOT-8 HiSeC TinyLogic DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE GHANGES WITHOUT FURTHER NOTIGE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNGTION OR DESIGN. FAIRGHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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