A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 OC
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 40 V
BVCEO IC = 1.0 mA 28 V
BVEBO IE = 1.0 mA 3.5 V
ICBO VCB = 28 V 500 µ
µµ
µA
hFE VCE = 5.0 V IC = 100 mA 20 120 ---
COB VCB = 28 V f = 1.0 MHz 5.0 pF
PG
η
ηη
ηCVCE = 28 V POUT = 2.0 W f = 400 MHz 12
50 13 dB
%
NPN RF POWER TRANSISTOR
MRF5174
DESCRIPTION:
The MRF5174 is a Common Emit ter
Device Designed for Class A, AB and
C Amplif ier Applications in the 225 to
400 MHz Band.
FEATURES INCLUDE:
•
••
• High Gain
•
••
• Gold Metallization
•
••
• Emitter Ballasting
MAXIMUM RATINGS
IC0.5 A
VCBO 40 V
PDISS 8.75 W @ T C = 25 OC
TJ-55 OC to +200 OC
TSTG -55 OC to +200 OC
θ
θθ
θJC 20 OC/W
PACKAGE STYLE .280 4L STUD
MINIMUM
inches / mm
.003 / 0.08
.270 / 6.86
.117 / 2.97
B
C
D
E
F
G
A
MAXIMUM
.285 / 7.24
.137 / 3.48
.007 / 0.18
inches / mm
H.245 / 6.22 .255 / 6.48
DIM
1.010 / 25.65 1.055 / 26.80
I
J.217 / 5.51
.220 / 5.59
K
.175 / 4.45 .285 / 7.24.275 / 6.99
.572 / 14.53
.640 / 16.26
.130 / 3.30
.230 /5.84
G
K
H
F
E
D C
B
45° A
#8-32 UNC
I
J
C
B
E
E
