2N3375 Transistors
Bipolar NPN UHF/Microwave Transisitor
Military/High-RelN
V(BR)CEO (V)40
V(BR)CBO (V)65
I(C) Max. (A)500m
Absolute Max. Power Diss. (W)12
Minimum Operating Temp (øC)
Maximum Operating Temp (øC)200#
I(CBO) Max. (A)100u°
@V(CBO) (V) (Test Condition)30
h(FE) Max. Current gain.100
@I(C) (A) (Test Condition)250m
@V(CE) (V) (Test Condition)5.0
f(T) Min. (Hz) Transition Freq500M
@I(C) (A) (Test Condition)125m
@V(CE) (V) (Test Condition)28
Power Gain Min. (dB)
@I(C) (A) (Test Condition)
@V(CE) (V) (Test Condition)
@Freq. (Hz) (Test Condition)
Noise Figure Min. (dB)
@I(C) (A) (Test Condition)
@V(CE) (V) (Test Condition)
@Freq. (Hz) (Test Condition)
Semiconductor MaterialSilicon
Package StyleTO-210AB
Mounting StyleT
Pinout Equivalence Code3-12
Ckt. (Pinout) NumberTR00300012
Description