SI-FOTODETEKTOREN SILICON PHOTODETECTORS
24
2.2.2 SMT-PIN-Fotodioden mit Filter 2.2.2 SMT-PIN Photodiodes with Filter
BP 104 FS ± 60 2.2 × 2.2 34 (≥ 25) 950 2 (≤ 30) 800 … 1100 10 Q62702-P1646 13
BPW 34 FS ± 60 2.65 × 2.65 50 (≥ 40) 950 2 (≤ 40) 800 … 1100 10 Q62702-P1604
14
BPW 34 FAS ± 60 2.65 × 2.65 50 (≥ 40)
λ = 870 nm
2 (≤ 30) 740 … 1100 10 Q62702-P463
Reverse Gullwing
BPW 34 FS E9087 ± 60 2.65 × 2.65 50 (≥ 40)
λ = 950 nm
2 (≤ 30) 780 … 1100 20 Q62702-P1826 15
BPW 34 FAS E9087
λ = 870 nm
730 … 1100 Q62702-P1829
SFH 2400 FA ± 60 1 × 1 6.2 (≥ 3.6) 1 (≤ 5)
VR = 20 V
750 … 1100 5 Q62702-P5035 16
SFH 2500 FA ± 15 1 × 1 70 (> 50) 1 (≤ 5) 750 … 1100 5 Q62702-P1795 7
SFH 2505 FA ± 15 1 × 1 70 (> 50) 1 (≤ 5) 750 … 1100 5 Q62702-P5030 8
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP
(EV = 1000 lx,
VR = 5 V)
µA
IR
(VR = 10 V)
nA
λ10%
nm
tr,tf
(VR = 10 V,
RL = 50 Ω)
ns
Ordering code Fig.
2.2 SMT-Dioden 2.2 SMT-Diodes (cont’d)
2.2.3 SMT- Differenzdiode 2.2.3 SMT Differential Photodiode
KOM 2125
± 60 4 (diode A)
10 (diode B)
40 (≥ 30) diode A
100 (≥ 75) diode B
5 (
≤
30) diode A
10 (
≤
30) diode B
400 … 1100
13 diode A
20 diode B
Q62702-K47
17
KOM 2125 FA
26 (≥ 20)
diode A,
70 (≥ 50)
diode B
λ = 870 nm,
Ee = 1 mW/cm2
750 … 1100 Q62702-P5313
Package Type ϕ
deg.
Radiant
sensitive
area
mm2
IP (λ = 950 nm,
Ee = 1 mW/cm2,
VR = 5 V)
µA
IR
(VR = 10 V)
nA
λ10%
nm
tr,tf
(VR = 20 V,
RL = 50 Ω)
ns
Ordering code Fig.
2.2 SMT-Dioden 2.2 SMT-Diodes (cont’d)